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At least 793 records · Page 44

Contribution of Electron Pressure to Ring Current and Ground Magnetic Depression Using RAM-SCB Simulations and Arase Observations During 7–8 November 2017 Magnetic Storm

Understanding the physical processes that control the dynamics of energetic particles in the inner magnetosphere is important for both space-borne and ground-based assets essential to the modern society. The storm time distribution of ring current particles in the inner magnetosphere depends strongly on their transport in the evolving electric and magnetic fields along with particle acceleration and loss. Here, we investigated the ring current particle variations using observations and simulations. We compared the ion (H + , He + , and O + ) and electron flux and plasma pressure variations from Arase observations with the self-consistent inner magnetosphere model: Ring current Atmosphere interactions Model with Self Consistent magnetic field (RAM-SCB) during the 7–8 November 2017 geomagnetic storm. We investigated the contribution of the different species (ions and electrons) to the magnetic field deformation observed at ground magnetic stations (09°–45° MLat) using RAM-SCB simulations. The results show that the ions are the major contributor with ~88% and electrons contribute ~12% to the total ring current pressure. It is also found that the electron contribution is non-negligible (~18%) to the ring current in dawn-side during the main phase of the storm. Thus, the electron contribution to the storm time ring current is important and should not be neglected.

79 ASTRONOMY AND ASTROPHYSICS↗

Seizure-induced alterations in fast-spiking basket cell GABA currents modulate frequency and coherence of gamma oscillation in network simulations

Gamma frequency oscillations have been proposed to contribute to memory formation and retrieval. Fast-spiking basket cells (FS-BCs) are known to underlie development of gamma oscillations. Fast, high amplitude GABA synapses and gap junctions have been suggested to contribute to gamma oscillations in FS-BC networks. Recently, we identified that, apart from GABAergic synapses, FS-BCs in the hippocampal dentate gyrus have GABAergic currents mediated by extrasynaptic receptors. Our experimental studies demonstrated two specific changes in FS-BC GABA currents following experimental seizures [Yu et al., J. Neurophysiol. 109, 1746 (2013)]: increase in the magnitude of extrasynaptic (tonic) GABA currents and a depolarizing shift in GABA reversal potential (E{sub GABA}). Here, we use homogeneous networks of a biophysically based model of FS-BCs to examine how the presence of extrasynaptic GABA conductance (g{sub GABA-extra}) and experimentally identified, seizure-induced changes in g{sub GABA-extra} and E{sub GABA} influence network activity. Networks of FS-BCs interconnected by fast GABAergic synapses developed synchronous firing in the dentate gamma frequency range (40–100 Hz). Systematic investigation revealed that the biologically realistic range of 30 to 40 connections between FS-BCs resulted in greater coherence in the gamma frequency range when networks were activated by Poisson-distributed dendritic synaptic inputs rather than by homogeneous somatic current injections, which were balanced for FS-BC firing frequency in unconnected networks. Distance-dependent conduction delay enhanced coherence in networks with 30–40 FS-BC interconnections while inclusion of gap junctional conductance had a modest effect on coherence. In networks activated by somatic current injections resulting in heterogeneous FS-BC firing, increasing g{sub GABA-extra} reduced the frequency and coherence of FS-BC firing when E{sub GABA} was shunting (−74 mV), but failed to alter average FS-BC frequency when E{sub GABA} was depolarizing (−54 mV). When FS-BCs were activated by biologically based dendritic synaptic inputs, enhancing g{sub GABA-extra} reduced the frequency and coherence of FS-BC firing when E{sub GABA} was shunting and increased average FS-BC firing when E{sub GABA} was depolarizing. Shifting E{sub GABA} from shunting to depolarizing potentials consistently increased network frequency to and above high gamma frequencies (>80 Hz). Since gamma oscillations may contribute to learning and memory processing [Fell et al., Nat. Neurosci. 4, 1259 (2001); Jutras et al., J. Neurosci. 29, 12521 (2009); Wang, Physiol. Rev. 90, 1195 (2010)], our demonstration that network oscillations are modulated by extrasynaptic inhibition in FS-BCs suggests that neuroactive compounds that act on extrasynaptic GABA receptors could impact memory formation by modulating hippocampal gamma oscillations. The simulation results indicate that the depolarized FS-BC GABA reversal, observed after experimental seizures, together with enhanced spillover extrasynaptic GABA currents are likely to promote generation of focal high frequency activity associated with epileptic networks.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Non-Markovian response of ultrafast coherent electronic ring currents in chiral aromatic molecules in a condensed phase

Results of a theoretical study on non-Markov response for femtosecond laser-driven coherent ring currents in chiral aromatic molecules embedded in a condensed phase are presented. Coherent ring currents are generated by coherent excitation of a pair of quasi-degenerated π-electronic excited states. The coherent electronic dynamical behaviors are strongly influenced by interactions between the electronic system and phonon bath in a condensed phase. Here, the bath correlation time is not instantaneous but should be taken to be a finite time in ultrashort time-resolved experiments. In such a case, Markov approximation breaks down. A hierarchical master equation approach for an improved semiclassical Drude dissipation model was adopted to examine the non-Markov effects on ultrafast coherent electronic ring currents of (P)-2,2{sup ′}-biphenol in a condensed phase. Time evolution of the coherent ring current derived in the hierarchical master equation approach was calculated and compared with those in the Drude model in the Markov approximation and in the static limit. The results show how non-Markovian behaviors in quantum beat signals of ring currents depend on the Drude bath damping constant. Effects of temperatures on ultrafast coherent electronic ring currents are also clarified.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Current-based detection of nonlocal spin transport in graphene for spin-based logic applications

Graphene has been proposed for novel spintronic devices due to its robust and efficient spin transport properties at room temperature. Some of the most promising proposals require current-based readout for integration purposes, but the current-based detection of spin accumulation has not yet been developed. In this work, we demonstrate current-based detection of spin transport in graphene using a modified nonlocal geometry. By adding a variable shunt resistor in parallel to the nonlocal voltmeter, we are able to systematically cross over from the conventional voltage-based detection to current-based detection. As the shunt resistor is reduced, the output current from the spin accumulation increases as the shunt resistance drops below a characteristic value R*. We analyze this behavior using a one-dimensional drift-diffusion model, which accounts well for the observed behavior. These results provide the experimental and theoretical foundation for current-based detection of nonlocal spin transport.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Inductance due to spin current

The inductance of spintronic devices that transport charge neutral spin currents is discussed. It is known that in a media that contains charge neutral spins, a time-varying electric field induces a spin current. We show that since the spin current itself produces an electric field, this implies existence of inductance and electromotive force when the spin current changes with time. The relations between the electromotive force and the corresponding flux, which is a vector calculated by the cross product of electric field and the trajectory of the device, are clarified. The relativistic origin generally renders an extremely small inductance, which indicates the advantage of spin current in building low inductance devices. The same argument also explains the inductance due to electric dipole current and applies to physical dipoles consist of polarized bound charges.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Investigation on edge fringing effect and oxide thickness dependence of inversion current in metal-oxide-semiconductor tunneling diodes with comb-shaped electrodes

A particular edge-dependent inversion current behavior of metal-oxide-semiconductor (MOS) tunneling diodes was investigated utilizing square and comb-shaped electrodes. The inversion tunneling current exhibits the strong dependence on the tooth size of comb-shaped electrodes and oxide thickness. Detailed illustrations of current conduction mechanism are developed by simulation and experimental measurement results. It is found that the electron diffusion current and Schottky barrier height lowering for hole tunneling current both contribute on inversion current conduction. In MOS tunneling photodiode applications, the photoresponse can be improved by decreasing SiO{sub 2} thickness and using comb-shaped electrodes with smaller tooth spacing. Meantime, the high and steady photosensitivity can also be approached by introducing HfO{sub 2} into dielectric stacks.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Degradation of AlGaN/GaN high-electron mobility transistors in the current-controlled off-state breakdown

We investigate degradation mechanisms in AlGaN/GaN HEMTs which were repeatedly driven into the current-controlled off-state breakdown or subject to 60 s voltage- or current-controlled off state stresses. The current-controlled sweep in to the breakdown allows the sustainability of breakdown that can not be observed in the voltage controlled sweep. Only temporal changes were observed in the HEMT dc performance after repetitive sweeps, which were explained by charging/discharging of the HEMT surface at the gate-to-drain access region and in the GaN buffer below the gate. Similar changes were observed also if high-voltage stress has been applied on the drain; however, permanent degradation appears after 60 s current-controlled breakdown stress. In this case, the drain leakage current, as well as the breakdown current, increases significantly. On the other hand, the breakdown voltage, as well as the gate characteristics, remains unaltered. We suggest that the avalanche-injection process is governing the off-state breakdown event with a dominant role of the potential barrier at the channel-buffer interface.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Spin force and the generation of sustained spin current in time-dependent Rashba and Dresselhaus systems

The generation of spin current and spin polarization in a two-dimensional electron gas structure is studied in the presence of Dresselhaus and Rashba spin-orbit couplings (SOC), the strength of the latter being modulated in time by an ac gate voltage. By means of the non-Abelian gauge field approach, we established the relation between the Lorentz spin force and the spin current in the SOC system, and showed that the longitudinal component of the spin force induces a transverse spin current. For a constant (time-invariant) Rashba system, we recover the universal spin Hall conductivity of e/(8π) , derived previously via the Berry phase and semi-classical methods. In the case of a time-dependent SOC system, the spin current is sustained even under strong impurity scattering. We evaluated the ac spin current generated by a time-modulated Rashba SOC in the absence of any dc electric field. The magnitude of the spin current reaches a maximum when the modulation frequency matches the Larmor frequency of the electrons.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Electrical modeling of InAs/GaSb superlattice mid-wavelength infrared pin photodiode to analyze experimental dark current characteristics

Dark current characteristics of 7 Monolayers (ML) InAs/ 4 ML GaSb SL pin photodiodes are simulated using ATLAS software. Using appropriate models and material parameters, we obtain good agreement between the simulated and the experimental dark current curves of photodiodes grown by molecular beam epitaxy. The n-type non-intentionally-doped (nid) SL samples exhibit a dependence of the lifetime with temperature following the T{sup -1/2} law, signature of Shockley-Read-Hall (SRH) Generation-Recombination current. We also studied the dependence of the dark current with the absorber doping level. It appears that the absorber doping level must not exceed a value of 2×10¹⁵cm⁻³, above this value the dark current is increasing with increased doping level. However for this doping value, a dark current as low as 5 × 10⁻⁹ A/cm², at 50 mV reverse bias at 77 K can be obtained.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Numerical study on the influence of electron cyclotron current drive on tearing mode

Controlling tearing modes by localized current drive is explored by using numerical simulation with a set of compressible magnetohydrodynamics equations. By examining the effects of different characteristics of driven current, such as density distribution, duration time, and deposition location, it is found that a driven current with larger magnitude and more focused deposition region shows a better suppression effect on the tearing modes. Meanwhile destabilizing effects are also observed when a driven current over a certain magnitude is applied continuously. In comparison with those on the X-point of the magnetic island, the results are better when the current deposition is targeted on the O-point. In addition, the timing control of the current deposition will be also addressed.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Current-voltage characteristics of dc corona discharges in air between coaxial cylinders

This paper presents the experimental measurement and numerical analysis of the current-voltage characteristics of dc corona discharges in air between coaxial cylinders. The current-voltage characteristics for both positive and negative corona discharges were measured within a specially designed corona cage. Then the measured results were fitted by different empirical formulae and analyzed by the fluid model. The current-voltage characteristics between coaxial cylinders can be expressed as I = C(U − U{sub 0}){sup m}, where m is within the range 1.5–2.0, which is similar to the point-plane electrode system. The ionization region has no significant effect on the current-voltage characteristic under a low corona current, while it will affect the distribution for the negative corona under a high corona current. The surface onset fields and ion mobilities were emphatically discussed.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

On the physical processes ruling an atmospheric pressure air glow discharge operating in an intermediate current regime

Low-frequency (100 Hz), intermediate-current (50 to 200 mA) glow discharges were experimentally investigated in atmospheric pressure air between blunt copper electrodes. Voltage–current characteristics and images of the discharge for different inter-electrode distances are reported. A cathode-fall voltage close to 360 V and a current density at the cathode surface of about 11 A/cm{sup 2}, both independent of the discharge current, were found. The visible emissive structure of the discharge resembles to that of a typical low-pressure glow, thus suggesting a glow-like electric field distribution in the discharge. A kinetic model for the discharge ionization processes is also presented with the aim of identifying the main physical processes ruling the discharge behavior. The numerical results indicate the presence of a non-equilibrium plasma with rather high gas temperature (above 4000 K) leading to the production of components such as NO, O, and N which are usually absent in low-current glows. Hence, the ionization by electron-impact is replaced by associative ionization, which is independent of the reduced electric field. This leads to a negative current-voltage characteristic curve, in spite of the glow-like features of the discharge. On the other hand, several estimations show that the discharge seems to be stabilized by heat conduction; being thermally stable due to its reduced size. All the quoted results indicate that although this discharge regime might be considered to be close to an arc, it is still a glow discharge as demonstrated by its overall properties, supported also by the presence of thermal non-equilibrium.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Current-driven vortex domain wall motion in wire-tube nanostructures

We have investigated the current-driven domain wall motion in nanostructures comprised of a pair of nanotube and nanowire segments. Under certain values of external magnetic fields, it is possible to pin a vortex domain wall in the transition zone between the wire and tube segments. We explored the behavior of this domain wall under the action of an electron flow applied in the opposite direction to the magnetic field. Thus, for a fixed magnetic field, it is possible to release a domain wall pinned simply by increasing the intensity of the current density, or conversely, for a fixed current density, it is possible to release the domain wall simply decreasing the magnetic external field. When the domain wall remains pinned due to the competition between the current density and the magnetic external field, it exhibits a oscillation frequency close to 8 GHz. The amplitude of the oscillations increases with the current density and decreases over time. On the other hand, when the domain wall is released and propagated through the tube segment, this shows the standard separation between a steady and a precessional regime. The ability to pin and release a domain wall by varying the geometric parameters, the current density, or the magnetic field transforms these wire-tube nanostructures in an interesting alternative as an on/off switch nano-transistor.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Structural tuning of nanogaps using electromigration induced by field emission current with bipolar biasing

We report a new method for fabrication of Ni nanogaps based on electromigration induced by a field emission current. This method is called “activation” and is demonstrated here using a current source with alternately reversing polarities. The activation procedure with alternating current bias, in which the current source polarity alternates between positive and negative bias conditions, is performed with planar Ni nanogaps defined on SiO{sub 2}/Si substrates at room temperature. During negative biasing, a Fowler-Nordheim field emission current flows from the source (cathode) to the drain (anode) electrode. The Ni atoms at the tip of the drain electrode are thus activated and then migrate across the gap from the drain to the source electrode. In contrast, in the positive bias case, the field emission current moves the activated atoms from the source to the drain electrode. These two procedures are repeated until the tunnel resistance of the nanogaps is successively reduced from 100 TΩ to 48 kΩ. Scanning electron microscopy and atomic force microscopy studies showed that the gap separation narrowed from approximately 95 nm to less than 10 nm because of the Ni atoms that accumulated at the tips of both the source and drain electrodes. These results show that the alternately biased activation process, which is a newly proposed atom transfer technique, can successfully control the tunnel resistance of the Ni nanogaps and is a suitable method for formation of ultrasmall nanogap structures.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Spin-orbit torques for current parallel and perpendicular to a domain wall

We report field- and current-induced domain wall (DW) depinning experiments in Ta\Co{sub 20}Fe{sub 60}B{sub 20}\MgO nanowires through a Hall cross geometry. While purely field-induced depinning shows no angular dependence on in-plane fields, the effect of the current depends crucially on the internal DW structure, which we manipulate by an external magnetic in-plane field. We show depinning measurements for a current sent parallel to the DW and compare its depinning efficiency with the conventional case of current flowing perpendicularly to the DW. We find that the maximum efficiency is similar for both current directions within the error bars, which is in line with a dominating damping-like spin-orbit torque (SOT) and indicates that no large additional torques arise for currents perpendicular to the DW. Finally, we find a varying dependence of the maximum depinning efficiency angle for different DWs and pinning levels. This emphasizes the importance of our full angular scans compared with previously used measurements for just two field directions (parallel and perpendicular to the DW) to determine the real torque strength and shows the sensitivity of the SOT to the precise DW structure and pinning sites.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Current sheets with inhomogeneous plasma temperature: Effects of polarization electric field and 2D solutions

We develop current sheet models which allow to regulate the level of plasma temperature and density inhomogeneities across the sheet. These models generalize the classical Harris model via including two current-carrying plasma populations with different temperature and the background plasma not contributing to the current density. The parameters of these plasma populations allow regulating contributions of plasma density and temperature to the pressure balance. A brief comparison with spacecraft observations demonstrates the model applicability for describing the Earth magnetotail current sheet. We also develop a two dimensional (2D) generalization of the proposed model. The interesting effect found for 2D models is the nonmonotonous profile (along the current sheet) of the magnetic field component perpendicular to the current sheet. Possible applications of the model are discussed.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Characterisation of the current switch mechanism in two-stage wire array Z-pinches

In this paper, we describe the operation of a two-stage wire array z-pinch driven by the 1.4 MA, 240 ns rise-time Magpie pulsed-power device at Imperial College London. In this setup, an inverse wire array acts as a fast current switch, delivering a current pre-pulse into a cylindrical load wire array, before rapidly switching the majority of the generator current into the load after a 100–150 ns dwell time. A detailed analysis of the evolution of the load array during the pre-pulse is presented. Measurements of the load resistivity and energy deposition suggest significant bulk heating of the array mass occurs. The ∼5 kA pre-pulse delivers ∼0.8 J of energy to the load, leaving it in a mixed, predominantly liquid-vapour state. The main current switch occurs as the inverse array begins to explode and plasma expands into the load region. Electrical and imaging diagnostics indicate that the main current switch may evolve in part as a plasma flow switch, driven by the expansion of a magnetic cavity and plasma bubble along the length of the load array. Analysis of implosion trajectories suggests that approximately 1 MA switches into the load in 100 ns, corresponding to a doubling of the generator dI/dt. Potential scaling of the device to higher current machines is discussed.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Current fluctuation of electron and hole carriers in multilayer WSe{sub 2} field effect transistors

Two-dimensional materials have outstanding scalability due to their structural and electrical properties for the logic devices. Here, we report the current fluctuation in multilayer WSe{sub 2} field effect transistors (FETs). In order to demonstrate the impact on carrier types, n-type and p-type WSe{sub 2} FETs are fabricated with different work function metals. Each device has similar electrical characteristics except for the threshold voltage. In the low frequency noise analysis, drain current power spectral density (S{sub I}) is inversely proportional to frequency, indicating typical 1/f noise behaviors. The curves of the normalized drain current power spectral density (NS{sub I}) as a function of drain current at the 10 Hz of frequency indicate that our devices follow the carrier number fluctuation with correlated mobility fluctuation model. This means that current fluctuation depends on the trapping-detrapping motion of the charge carriers near the channel interface. No significant difference is observed in the current fluctuation according to the charge carrier type, electrons and holes that occurred in the junction and channel region.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗