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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 775 records · Page 43
All sourcesNASA NTRSDOE OSTI
NASA NTRS1984

Radiation tolerance of low resistivity, high voltage silicon solar cells

The radiation tolerance of the following three low resistivity, high voltage silicon solar cells was investigated: (1) the COMSAT MSD (multi-step diffused) cell, (2) the MinMIS cell, and (3) the MIND cell. A description of these solar cells is given along with drawings of their configurations. The diffusion length damage coefficients for the cells were calculated and presented. Solar cell spectral response was also discussed. Cells of the MinMIS type were judged to be unsuitable for use in the space radiation environment.

Weizer, V. G.↗
NASA NTRS1984

Characterization of Open Circuit Voltage and Capacity as a Function of Time

It is noted from the data presented that Li/BCX cells lose approximately 8% of their rated capacity in the first 2 months of storage. After this period of time, little difference is noted in the average realized capacity; however, a significant increase in the range is observed. Over the same period of time the OCV falls at a rate of 0.02V per 1,000 hours. After a period of 8,000 hours the OCV appears stabilize at a value of approximately 3.75V. This may be related to changes in Cl2 concentration due to self-discharge or other reactions. These data indicate that no correlation exists between the reduced open circuit voltage and the realized capacity.

Krehl, P. W.↗
NASA NTRS1984

Prediction of Battery Life and Behavior from Analysis of Voltage Data

A method for simulating charge and discharge characteristics of secondary batteries is discussed. The analysis utilizes a nonlinear regression technique where empirical data is computer fitted with a five coefficient nonlinear equation. The equations for charge and discharge voltage are identical except for a change of sign before the second and third terms.

Mcdermott, P. P.↗
NASA NTRS1983

Relationship between the blue response and open-circuit voltage of high performance silicon solar cells

The relationship between the response at blue wavelengths and the open-circuit voltage of high performance silicon solar cells with a virtually 'transparent' emitter is analyzed. It is shown that a one-dimensional cell model cannot simultaneously model the optical collection properties and operating characteristics of such cells. The analysis highlights the importance of surface conditions and shows that previous conclusions regarding bounds on Auger coefficients imposed by correlating these parameters must be treated with caution.

Green, M. A.↗
NASA NTRS1985

Fast-Recovery, High-Voltage Power Diode

New family of fast-recovery high-voltage power diodes compatible with D60T and D7ST transistors developed. Have wide range of applications in spacecraft and aircraft electrical distribution equipment, dc/dc inverters, and ac motor controllers for high-horsepower electric motors operating from 480-volt ac lines. Fast-Recovery 1,200-V Power Diodes use chip of hexagonal geometry to maximize effective silicon area.

Sundberg, G.↗
NASA NTRS1985

Low-Voltage Protection For Volatile Computer Memories

Short-circuit current provides minimum memory power. Protective circuit includes dc-to-dc converter that supplies keep-alive voltage to memories when short circuit occurs in any of system loads. Converter powered by lowvoltage across two of three series diodes generated by short-circuit bus current. Relay switch is in open (short-circuit-detected) position. Protective circuit useful wherever necessary to improve reliability of volatile memories or other circuits that must not lose power.

Detwiler, R. C.↗
NASA NTRS1985

Characteristics of EMI generated by negative metal-positive dielectric voltage stresses due to spacecraft charging

Charging of spacecraft surfaces by the environmental plasma can result in differential potentials between metallic structure and adjacent dielectric surfaces in which the relative polarity of the voltage stress is either negative dielectric/positive metal or negative metal/positive dielectric. Negative metal/positive dielectric is a stress condition that may arise if relatively large areas of spacecraft surface metals are shadowed from solar UV and/or if the UV intensity is reduced as in the situation in which the spacecraft is entering into or leaving eclipse. The results of experimental studies of negative metal/positive dielectric systems are given. Information is given on: enhanced electron emission I-V curves; e(3) corona noise vs e(3) steady-state current; the localized nature of e(3) and negative metal arc discharge currents; negative metal arc discharges at stress thresholds below 1 kilovolt; negative metal arc discharge characteristics; dependence of blowoff arc discharge current on spacecraft capacitance to space (linear dimension); and damage to second surface mirrors due to negative metal arcs.

Chaky, R. C.↗
NASA NTRS1985

High voltage isolation transformer

A high voltage isolation transformer is provided with primary and secondary coils separated by discrete electrostatic shields from the surfaces of insulating spools on which the coils are wound. The electrostatic shields are formed by coatings of a compound with a low electrical conductivity which completely encase the coils and adhere to the surfaces of the insulating spools adjacent to the coils. Coatings of the compound also line axial bores of the spools, thereby forming electrostatic shields separating the spools from legs of a ferromagnetic core extending through the bores. The transformer is able to isolate a high constant potential applied to one of its coils, without the occurrence of sparking or corona, by coupling the coatings, lining the axial bores to the ferromagnetic core and by coupling one terminal of each coil to the respective coating encasing the coil.

Clatterbuck, C. H.↗
NASA NTRS1985

Increased voltage photovoltaic cell

A photovoltaic cell, such as a solar cell, is provided which has a higher output voltage than prior cells. The improved cell includes a substrate of doped silicon, a first layer of silicon disposed on the substrate and having opposite doping, and a second layer of silicon carbide disposed on the first layer. The silicon carbide preferably has the same type of doping as the first layer.

Ross, B.↗
NASA NTRS1984

Environmentally-induced voltage limitations in large space power systems

Large power systems proposed for future space missions imply higher operating voltage requirements which, in turn, will interact with the space plasma environment. The effects of these interactions can only be inferred because of the limited data base of ground simulations, small test samples, and two space flight experiments. This report evaluates floating potentials for a 100 kW power system operating at 300, 500, 750, and 1000 volts in relation to this data base. Of primary concern is the possibility of discharging to space. The implications of such discharges were studied at the 500 volt operational setting. It was found that discharging can shut down the power system if the discharge current exceeds the array short circuit current. Otherwise, a power oscillation can result that ranges from 2 to 20 percent, depending upon the solar array area involved in the discharge. Means of reducing the effect are discussed.

Stevens, N. J.↗
NASA NTRS1985

Effect of recombination on the open-circuit voltage of a silicon solar cell

A theoretical study of the influence of band-band Auger, band-trap Auger, and the ordinary Shockley-Read-Hall mechanism for carrier recombination on the open-circuit voltage VOC of a solar cell is presented. Under reasonable assumptions for the magnitude of rate constants and realistic values for trap densities, surface recombination velocities and band-gap narrowing, the maximum VOC for typical back surface field solar cells is found to lie in the range between 0.61 and 0.72 V independent of base width.

Von Roos, O.↗
NASA NTRS1984

The effect of diffusion induced lattice stress on the open-circuit voltage in silicon solar cells

It is demonstrated that diffusion induced stresses in low resistivity silicon solar cells can significantly reduce both the open-circuit voltage and collection efficiency. The degradation mechanism involves stress induced changes in both the minority carrier mobility and the diffusion length. Thermal recovery characteristics indicate that the stresses are relieved at higher temperatures by divacancy flow (silicon self diffusion). The level of residual stress in as-fabricated cells was found to be negligible in the cells tested.

Weizer, V. G.↗
NASA NTRS1984

High voltage requirements and issues for the 1990's

The development of high-power high-voltage space systems will require advances in power generation and processing. The systems must be reliable, adaptable, and durable for space mission success. The issues, which must be resolved in order to produce a high power system, are weight and volume reduction of components and modules and the creation of a reliable high repetition pulse power processor. Capacitor energy density must be increased by twice the present capacity and packaging must be reduced by a factor of 10 to 20 times. The packaging must also protect the system from interaction with the natural space environment and the induced environment, produced from spacecraft systems and environment interaction.

Dunbar, W. G.↗
NASA NTRS1986

Cleaning High-Voltage Equipment With Corncob Grit

High electrical resistance of particles makes power shutdown unnecessary. New, inexpensive method of cleaning high-voltage electrical equipment uses plentiful agricultural product - corncob grit. Method removes dirt and debris from transformers, circuit breakers, and similar equipment. Suitable for utilities, large utility customers, and electrical-maintenance services.

Caveness, C.↗
NASA NTRS1985

Module voltage isolation and corrosion research

A summary of recent research at JPL on two topics related to achieving long term reliability of photovoltaic modules: voltage isolation and electrochemical corrosion is presented. Special emphasis is given to similarities and differences in performance between crystalline silicon modules and amorphous silicon modules.

Mon, G. R.↗
NASA NTRS1985

Further research on high open circuit voltage in silicon solar cells

The results of a new research on the use of controlled dopant profiles and oxide passivation to achieve high open circuit voltage V sub oc in silicon solar cells is presented. Ion implantation has been used to obtain nearly optimal values of surface dopant concentration. The concentrations are selected so as to minimize heavy doping effects and thereby provide both high blue response and high V sub oc ion implantation technique has been successfully applied to fabrication of both n-type and p-type emitters. V sub oc of up to 660 mV is reported and AMO efficiency of 16.1% has been obtained.

Spitzer, M. B.↗
NASA NTRS1985

Amplifier for measuring low-level signals in the presence of high common mode voltage

A high common mode rejection differential amplifier wherein two serially arranged Darlington amplifier stages are employed and any common mode voltage is divided between them by a resistance network. The input to the first Darlington amplifier stage is coupled to a signal input resistor via an amplifier which isolates the input and presents a high impedance across this resistor. The output of the second Darlington stage is transposed in scale via an amplifier stage which has its input a biasing circuit which effects a finite biasing of the two Darlington amplifier stages.

Lukens, F. E.↗
NASA NTRS1985

The effect of a defective BSF layer on solar cell open circuit voltage

A straightforward analysis of special limiting cases has permitted the determination of the range of possible open circuit voltage losses due to a defective BSF (back surface field) layer. An important result of the analysis is the finding that it is possible to have a fully effective BSF region, regardless of the spatial distribution of the defective areas, as long as the total defective area is reduced below certain limits. Distributed defects were found to be much more harmful than lumped defects.

Weizer, V. G.↗