Creep strength variations related to grain boundaries in the equiatomic CoCrFeMnNi high-entropy alloy
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The degenerately doped sesquichalcogenide Bi 2 Te 3 , a well-known thermoelectric material, has attracted much attention in recent years as a topological insulator in which conducting surface states lead to exotic electronic transport. Here, in this study, we report the observation of anisotropic magnetoresistance (AMR) and planar Hall effect (PHE) in polycrystalline thin films of Bi 2 Te 3 over a broad range of temperature and magnetic field strength. The values of AMR, PHE and the Hall mobility (μ H ) are compared with results of similar measurements on single crystals and epitaxial films of Bi 2 Te 3 , where these properties are understood in the framework of electronic transport in the topologically protected conducting surface states. Our textured polycrystalline films show a robust metallic character with a carrier density (n s ) and mobility μ H of 9×10 20 cm -3 and 16.7 cm 2 V -1 s -1 respectively. This carrier density is higher and the mobility lower by an order of magnitude compared to the reported values of n s and μ H in epitaxial films and single crystals. However, we see a comparable AMR and PHE in our films for which the concept of conducting surface states is ill-defined due to their polycrystallinity and disordered structure. We suggest that an anisotropic backscattering of charge carriers in the strongly spin – orbit coupled electronic states of this heavy-metal-based non-magnetic compound may lead to the measured resistivity anisotropy. The observation of AMR and PHE in polycrystalline films may be important for scalable production of Bi 2 Te 3 based AMR and PHE sensors of magnetic fields.
An adjoint method to calculate the gradient of island width in stellarators is presented and applied to a set of magnetic field configurations. The underlying method for calculation of the island width is that of Cary & Hanson ( Phys. Fluids B, vol. 3, issue 4, 1991, pp. 1006–1014) (with a minor modification), and requires that the residue of the island centre be small. Therefore, the gradient of the residue is calculated in addition. Both the island width and the gradient calculations are verified using an analytical magnetic field configuration introduced by Reiman & Greenside ( Comput. Phys. Commun. , vol. 43, issue 1, 1986, pp. 157–167). The method is also applied to the calculation of the shape gradient of the width of a magnetic island in a National Compact Stellarator Experiment (NCSX) vacuum configuration with respect to positions on a coil. A gradient-based optimization is applied to a magnetic field configuration studied by Hanson & Cary ( Phys. Fluids , vol. 27, issue 4, 1984, pp. 767–769) to minimize stochasticity by adding perturbations to a pair of helical coils. Although only vacuum magnetic fields and an analytical magnetic field model are considered in this work, the adjoint calculation of the island width gradient could also be applied to a magnetohydrodynamic (MHD) equilibrium if the derivative of the magnetic field, with respect to the equilibrium parameters, is known. Using the island width gradient calculation presented here, more general gradient-based optimization methods can be applied to design stellarators with small magnetic islands. Moreover, the sensitivity of the island size may itself be optimized to ensure that coil tolerances, with respect to island size, are kept as high as possible.
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We introduce an exact-two-component complete active space self-consistent-field (X2C-CASSCF) method formulated under the restricted-magnetic-balance condition. This framework allows for the nonperturbative treatment of static magnetic fields using gauge-including atomic orbitals (GIAOs). The GIAO-X2C-CASSCF methodology effectively captures all microstates within the same 2J + 1-degenerate manifold and their splitting in a static magnetic field, which are not accessible through single-reference-based methods. We also present mathematical recursive expressions for evaluating one-electron relativistic integrals by using GIAOs in the presence of a finite magnetic field. Benchmark studies include oxygen and nitrogen K-edge X-ray magnetic circular dichroism spectroscopy (XMCD) for closed-shell organic compounds, as well as L-edge XMCD spectroscopy for the high-spin open-shell transition metal ion Mn 2+ and the tetrahedral Mn(II)O 4 6– complex.
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Although interfacial solution structure impacts environmental, biological, and technological phenomena, including colloidal stability, protein assembly, heterogeneous nucleation, and water desalination, its molecular details remain poorly understood. Here, we visualize the three-dimensional (3D) hydration structure at the boehmite(010)-water interface using fast force mapping (FFM). Using a self-consistent scheme to decouple long-range tip-sample interactions from short-range solvation forces, we obtain the solution structure with lattice resolution. The results are benchmarked against molecular dynamics simulations that explicitly include the effects of the tip with different levels of approximation and systematically account for tip size, chemistry, and confinement effects. We find four laterally structured water layers within 1 nm of the surface, with the highest water densities at sites adjacent to hydroxyl groups. The key features beyond the first two layers can only be predicted using a full-scale simulation of the boehmite-water-silica system. Our findings further reveal a complex relationship between site-specific chemistry, water density, and long-range particle interactions; and present important advances toward quantitative data interpretation in 3D FFM.
Sublimation and O 2 etching kinetics for a series of individual silicon (Si) nanoparticles (NPs) were studied for NP temperatures (T NP ) from 1200 to 2050 K, using a single NP mass spectrometry technique. Sublimation was significant for T NP > 1700 K, with rates reasonably well fit to Arrhenius kinetics, but evolving, particularly during initial heating. O 2 etching efficiencies varied from NP-to-NP and with changing T NP , but also evolved dramatically over time. For T NP ≤ 1500 K, NPs were observed to passivate after losing 30 to 50% of the initial NP mass. At higher T NP , etching efficiency decreased over time, but never passivated. Interestingly, bulk Si passivation has not been observed for the range of T NP and O 2 pressures used here, and a model was developed to test the effects of several NP-specific mechanistic parameters on both the initial and time-dependent etching behavior. As a result, the optical properties of the hot NPs were also found to evolve as the NPs etched, particularly during the initial fast mass loss, and correlations between emission intensities and etching kinetics were examined.