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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 775 records · Page 43
All sourcesNASA NTRSDOE OSTI
DOE OSTI2014

High quality Y-type hexaferrite thick films for microwave applications by an economical and environmentally benign crystal growth technique

Thick barium hexaferrite Ba{sub 2}Zn{sub 2}Fe{sub 12}O{sub 22} (i.e., Zn{sub 2}Y) films having thicknesses of ∼100 μm were epitaxially grown on MgO (111) substrates using an environmentally benign ferrite-salt mixture by vaporizing the salt. X-ray diffraction pole figure analyses showed (00l) crystallographic alignment with little in plane dispersion confirming epitaxial growth. Saturation magnetization, 4πM{sub s}, was measured for as-grown films to be 2.51 ± 0.1 kG with an out of plane magnetic anisotropy field H{sub A} of 8.9 ± 0.1 kOe. Ferromagnetic resonance linewidth, as the peak-to-peak power absorption derivative at 9.6 GHz, was measured to be 62 Oe. These properties demonstrate a rapid, convenient, cost-effective, and nontoxic method of growing high quality thick crystalline ferrite films which could be used widely for microwave device applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Electroplated L1{sub 0} CoPt thick-film permanent magnets

The fabrication and magnetic characterization of 15-μm-thick electroplated L1{sub 0} CoPt hard magnets with good magnetic properties is reported in this paper. Experimental study of the dependence of the magnets' properties on annealing temperature reveals that an intrinsic coercivity H{sub ci} = ∼800 kA/m (10 kOe), squareness >0.8, and energy product of >150 kJ/m{sup 3} are obtained for photolithographically patterned structures (250 μm × 2 mm stripes; 15 μm thickness) electroplated on silicon substrates and annealed in hydrogen forming gas at 700 °C. Scanning electron microscopy is used to inspect the morphology of both the as-deposited and annealed magnetic layers, and X-ray Diffractometer analysis on the magnets annealed at 700 °C confirm a phase transformation to an ordered L1{sub 0} CoPt structure, with a minor phase of hcp Co. These thick films are intended for microsystems/MEMS applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Synthesis and characterization of 10 nm thick piezoelectric AlN films with high c-axis orientation for miniaturized nanoelectromechanical devices

The scaling of piezoelectric nanoelectromechanical systems (NEMS) is challenged by the synthesis of ultrathin and high quality piezoelectric films on very thin electrodes. We report the synthesis and characterization of the thinnest piezoelectric aluminum nitride (AlN) films (10 nm) ever deposited on ultrathin platinum layers (2–5 nm) using reactive sputtering. X-ray diffraction, high-resolution transmission electron microscopy, and fast Fourier transform analyses confirmed the proper crystal orientation, fine columnar texture, and the continuous lattice structure within individual grains in the deposited AlN nanometer thick films. The average extracted d{sub 31} piezoelectric coefficient for the synthesized films is −1.73 pC/N, which is comparable to the reported values for micron thick and highly c-axis oriented AlN films. The 10 nm AlN films were employed to demonstrate two different types of optimized piezoelectric nanoactuators. The unimorph actuators exhibit vertical displacements as large as 1.1 μm at 0.7 V for 25 μm long and 30 nm thick beams. These results have a great potential to realize miniaturized NEMS relays with extremely low voltage, high frequency resonators, and ultrasensitive sensors.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Strain relaxation of thick (11–22) semipolar InGaN layer for long wavelength nitride-based device

In this study, the properties of thick stress-relaxed (11–22) semipolar InGaN layers were investigated. Owing to the inclination of growth orientation, misfit dislocations (MDs) occurred at the heterointerface when the strain state of the (11–22) semipolar InGaN layers reached the critical point. We found that unlike InGaN layers based on polar and nonpolar growth orientations, the surface morphologies of the stress-relaxed (11–22) semipolar InGaN layers did not differ from each other and were similar to the morphology of the underlying GaN layer. In addition, misfit strain across the whole InGaN layer was gradually relaxed by MD formation at the heterointerface. To minimize the effect of surface roughness and defects in GaN layers on the InGaN layer, we conducted further investigation on a thick (11–22) semipolar InGaN layer grown on an epitaxial lateral overgrown GaN template. We found that the lateral indium composition across the whole stress-relaxed InGaN layer was almost uniform. Therefore, thick stress-relaxed (11–22) semipolar InGaN layers are suitable candidates for use as underlying layers in long-wavelength devices, as they can be used to control strain accumulation in the heterostructure active region without additional influence of surface roughness.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Nonlinear optical absorption tuning in Bi{sub 3.15}Nd{sub 0.85}Ti{sub 3}O{sub 12} ferroelectric thin films by thickness

The tunability of nonlinear optical (NLO) absorption in Bi{sub 3.15}Nd{sub 0.85}Ti{sub 3}O{sub 12} (BNT) ferroelectric thin films was investigated through the open aperture Z-scan method with femtosecond laser pulses at the wavelength of 800 nm. NLO absorption responses of the BNT films were observed to be highly sensitive to the film thickness. As the film thickness increases from 106.8 to 139.7 nm, the NLO absorption changes from saturable absorption (SA) to reverse saturable absorption (RSA). When the film thickness further increases to 312.9 nm, the RSA effect is enhanced. A band-gap-related competition between the ground-state excitation and the two-photon absorption is responsible for the absorption switching behavior. Such a tunable NLO absorption can widen the photonic application of the BNT thin films.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Strain-relaxation and critical thickness of epitaxial La 1.85 Sr 0.15 CuO 4 films

We report the thickness-dependent strain-relaxation behavior and the associated impacts upon the superconductivity in epitaxial La 1.85 Sr 0.15 CuO 4 films grown on different substrates, which provide a range of strain. We have found that the critical thickness for the onset of superconductivity in La 1.85 Sr 0.15 CuO 4 films is associated with the finite thickness effect and epitaxial strain. In particular, thin films with tensile strain greater than ~0.25% revealed no superconductivity. We attribute this phenomenon to the inherent formation of oxygen vacancies that can be minimized via strain relaxation.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Interface effects in nanometer-thick yttrium iron garnet films studied by magneto-optical spectroscopy

The properties of nanometer-thick yttrium iron garnet (YIG) films are strongly influenced by interfaces. This work employs spectral ellipsometry (SE) and magneto-optic polar Kerr rotation (PKR) to characterize YIG films with thickness, t, from 6 nm to 30 nm grown on Gd 3 Ga 5 O 12 (GGG) substrates oriented parallel to (111) plane. The films display a surface roughness of 0.35 nm or lower. The analysis of the SE data at the photon energies of 1 eV < E < 6.5 eV provided the t and permittivity values. The PKR at 1.3 eV < E < 4.5 eV is reasonably explained with the optical model for the YIG film/GGG substrate system. Even better agreement is achieved by assuming a 1.07-nm-thick layer sandwiched between YIG and GGG that has Fe 3+ sublattice magnetization opposite to that in the YIG volume. This suggests the existence of antiferromagnetic coupling between the Gd 3+ and tetrahedral Fe 3+ .

36 MATERIALS SCIENCE↗
DOE OSTI2016

Moderate repetition rate ultra-intense laser targets and optics using variable thickness liquid crystal films

Liquid crystal films are variable thickness, planar targets for ultra-intense laser matter experiments such as ion acceleration. Their target qualities also make them ideal for high-power laser optics such as plasma mirrors and waveplates. By controlling parameters of film formation, thickness can be varied on-demand from 10 nm to above 50 μm, enabling real-time optimization of laser interactions. Presented here are results using a device that draws films from a bulk liquid crystal source volume with any thickness in the aforementioned range. Films form within 2 μm of the same location each time, well within the Rayleigh range of even tight F/# systems, thus removing the necessity for realignment between shots. As a result, the repetition rate of the device exceeds 0.1 Hz for sub-100nm films, facilitating higher repetition rate operation of modern laser facilities.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Progress Implementing a Model-Based Iterative Reconstruction Algorithm for Ultrasound Imaging of Thick Concrete

All commercial nuclear power plants (NPPs) in the United States contain concrete structures. These structures provide important foundation, support, shielding, and containment functions. Identification and management of aging and the degradation of concrete structures is fundamental to the proposed long-term operation of NPPs. Concrete structures in NPPs are often inaccessible and contain large volumes of massively thick concrete. While acoustic imaging using the synthetic aperture focusing technique (SAFT) works adequately well for thin specimens of concrete such as concrete transportation structures, enhancements are needed for heavily reinforced, thick concrete. We argue that image reconstruction quality for acoustic imaging in thick concrete could be improved with Model-Based Iterative Reconstruction (MBIR) techniques. MBIR works by designing a probabilistic model for the measurements (forward model) and a probabilistic model for the object (prior model). Both models are used to formulate an objective function (cost function). The final step in MBIR is to optimize the cost function. Previously, we have demonstrated a first implementation of MBIR for an ultrasonic transducer array system. The original forward model has been upgraded to account for direct arrival signal. Updates to the forward model will be documented and the new algorithm will be assessed with synthetic and empirical samples.

concrete NDE↗
DOE OSTI2017

Layer thickness dependent strain rate sensitivity of Cu/amorphous CuNb multilayer

We report strain rate sensitivity of crystalline materials is closely related to dislocation activity. In the absence of dislocations, amorphous alloys are usually considered to be strain rate insensitive. However, the strain rate sensitivity of crystalline/amorphous composites is rarely studied, especially at nanoscale. In this study, we show that the strain rate sensitivity of Cu/amorphous CuNb multilayers is layer thickness dependent. At small layer thickness (below 50 nm), the multilayers demonstrate limited strain rate sensitivity; at relatively large layer thickness (above 100 nm), the strain rate sensitivity of multilayers is close to that of the single layer Cu film. Finally, mechanisms that lead to size dependent variation of strain rate sensitivity in these multilayers are discussed.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Unraveling thickness-dependent spin relaxation in colossal magnetoresistance manganite films

In this paper, we used ultrafast optical spectroscopy to study photoinduced spin relaxation in 10–100 nm thick La 0.7 Ca 0.3 MnO 3 films. The spin-lattice relaxation time displays a strong dependence on thickness below the Curie temperature. Our simulations show that the observed thickness-dependent relaxation results from much faster thermal decay through the substrate in thinner films that leads to artificially faster demagnetization. Furthermore, we provide an analytical approach to gain insight into the spin-lattice relaxation time for highly thermal dissipative films. Finally, our study strongly suggests that careful consideration of the influence of transient thermal variations on photoinduced demagnetization is mandatory when incorporating absorbing thin magnetic films into heterostructures and devices.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Thickness scaling of pyroelectric response in thin ferroelectric Hf 1- x Zr x O 2 films

In this study, the scaling of polarization and pyroelectric response across a thickness series (5–20 nm) of Hf 0.58 Zr 0.42 O 2 films with TaN electrodes was characterized. Reduction in thickness from 20 nm to 5 nm resulted in a decreased remanent polarization from 17 to 2.8 μC cm -2 . Accompanying the decreased remanent polarization was an increased absolute pyroelectric coefficient, from 30 to 58 μC m -2 K -1 . The pyroelectric response of the 5 nm film was unstable and decreased logarithmically with time, while that of 10 nm and thicker films was stable over a time scale of >300 h at room temperature. Finally, the sign of the pyroelectric response was irreversible with differing polarity of poling bias for the 5 nm thick film, indicating that the enhanced pyroelectric response was of electret origins, whereas the pyroelectric response in thicker films was consistent with a crystallographic origin.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Effect of thickness on metal-to-semiconductor transition in 2-dimensional TiN thin films

Titanium nitride thin films have been grown on c-plane sapphire substrates using a pulsed laser deposition technique in the thickness range of 6–45 nm. X-ray diffraction (XRD) analysis has demonstrated TiN (111) as the preferred orientation of growth on the sapphire substrates. The XRD measurements have also indicated that orientational alignment between the TiN and the sapphire improved with an increase in the TiN film thickness. A change in the resistivity behavior of the TiN thin films from metallic to semiconducting has been observed as the TiN film thickness is reduced below 15 nm. Analyzing and fitting of TiN films’ conductivity data have shown that while the Arrhenius law governs their conductivity in the temperature range of 300–350 K, conductivity values of the films follow the variable range hopping mechanism below 300 K.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Detector thickness effects on nanosecond-gated imager response

Hybrid CMOS multi-frame imagers with exposure times down to ~2 ns have made significant impacts in high energy density physics and inertial confinement fusion research. The detector thickness is a key parameter in both detector quantum efficiency and temporal response. The Icarus hybrid CMOS imager has been fabricated with Si detector thicknesses of 8, 25, and 100 µm. The temporal response of imaging sensors with exposure time down to 2 ns has been examined and compared to directly measured photodiode current. The 100-μm thick variant displays extended features related to charge carrier collection and is more susceptible to field collapse. Here, we also demonstrate charge collection time effects on spatial response.

47 OTHER INSTRUMENTATION↗
DOE OSTI2023

Low-efficiency-droop c -plane InGaN/GaN light-emitting diodes through the use of thick single quantum wells and doped barriers

Efficiency droop at high current densities is a problem for InGaN-based light-emitting diodes (LEDs), especially for conventional c-plane devices. The large internal electric fields in c-plane quantum wells (QWs) lead to an increase in the active region carrier density (n), causing the electrical efficiency droop onset to occur at low current densities. Here, we present an approach to reduce the internal electric fields (Eint) in c-plane QWs by placing doped p-type and n-type GaN barriers close to the QW. The reduced Eint also allows a thick QW active region design, which helps to lower n to further reduce the droop. The concept of using doped barriers to control Eint is explained using theory and device simulations. Following that, multiple series of thick single QW (SQW) LEDs were grown and characterized. Key parameters in the epitaxial design such as the doping levels and the relative position of the doped barriers were systematically studied and optimized. In conclusion, by using optimized doped barriers and a thick SQW, c-plane LEDs with a low-efficiency droop of 14% at 300 A/cm2 [with respect to the peak external quantum efficiency (EQE)] and a high peak EQE of 49% were demonstrated.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Ferroelectric behavior of sputter deposited Al 0.72 Sc 0.28 N approaching 5 nm thickness

Ferroelectric Al 1-x Sc x N has raised much interest in recent years due to its unique ferroelectric properties and complementary metal oxide semiconductor back-end-of-line compatible processing temperatures. Potential applications in embedded nonvolatile memory, however, require ferroelectric materials to switch at relatively low voltages. One approach to achieving a lower switching voltage is to significantly reduce the Al 1-x Sc x N thickness. In this work, ferroelectric behavior in 5-27 nm films of sputter deposited Al 0.72 Sc 0.28 N has been studied. We find that the 10 kHz normalized coercive field increases from 4.4 to 7.3 MV/cm when reducing the film thickness from 27.1 to 5.4 nm, while over the same thickness range, the characteristic breakdown field of a 12.5 μm radius capacitor increases from 8.3 to 12.1 MV/cm. In conclusion, the 5.4 nm film demonstrates ferroelectric switching at 5.5 V when excited with a 500 ns pulse and a switching speed of 60 ns.

30 DIRECT ENERGY CONVERSION↗
DOE OSTI2023

A coded aperture with sub-mean-free-path thickness for implosion geometry imaging on ICF and IFE experiments

Inertial confinement fusion and inertial fusion energy experiments diagnose the geometry of the fusion region through imaging of the neutrons released through fusion reactions. Pinhole arrays typically used for such imaging require thick substrates to obtain high contrast along with a small pinhole diameter to obtain high resolution capability, resulting in pinholes that have large aspect ratios. This leads to expensive pinhole arrays that have small solid angles and are difficult to align. Here, we propose a coded aperture with scatter and partial attenuation (CASPA) for fusion neutron imaging that relaxes the thick substrate requirement for good image contrast. These coded apertures are expected to scale to larger solid angles and are easier to align without sacrificing imaging resolution or throughput. We use Monte Carlo simulations (Geant4) to explore a coded aperture design to measure neutron implosion asymmetries on fusion experiments at the National Ignition Facility (NIF) and discuss the viability of this technique, matching the current nominal resolution of 10 µm. The results show that a 10 mm thick tungsten CASPA can image NIF implosions with neutron yields above 10 14 with quality comparable to unprocessed data from a current NIF neutron imaging aperture. Furthermore, this CASPA substrate is 20 times thinner than the current aperture arrays for fusion neutron imaging and less than one mean free-path of 14.1 MeV neutrons through the substrate. Since the resolution, solid angle, and throughput are decoupled in coded aperture imaging, the resolution and solid angle achievable with future designs will be limited primarily by manufacturing capability.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2025

Thickness scaling and ferroelectric switching in wurtzite structure zinc magnesium oxide thin films

This study reports the thickness scaling of sputtered ferroelectric Zn 0.61 Mg 0.39 O (ZMO) thin films down to 43 nm. Encapsulated IrO 2 /ZMO/Ir capacitors exhibited switchable polarizations exceeding 50 μC cm −2 and coercive fields that increased from 3.9 to 4.4 MV cm −1 as the thickness decreased. Switching kinetics are best described by the simultaneous non-linear nucleation and the growth model. Bimodal switching is prevalent at low thicknesses, with the fastest switching times measured to be approximately 400 ns. Device encapsulation made ZMO switching kinetics more abrupt, potentially due to changes in the concentration of atmosphere-induced defects such as hydroxides. These results demonstrate stable ferroelectricity and sub-microsecond switching in sub-50 nm wurtzite ZMO, highlighting its potential as a low-voltage ferroelectric for integrated nonvolatile memory applications.

36 MATERIALS SCIENCE↗