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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 775 records · Page 43
All sourcesNASA NTRSDOE OSTI
NASA NTRS1999

MLP: A Parallel Programming Alternative to MPI for New Shared Memory Parallel Systems

Recent developments at the NASA AMES Research Center's NAS Division have demonstrated that the new generation of NUMA based Symmetric Multi-Processing systems (SMPs), such as the Silicon Graphics Origin 2000, can successfully execute legacy vector oriented CFD production codes at sustained rates far exceeding processing rates possible on dedicated 16 CPU Cray C90 systems. This high level of performance is achieved via shared memory based Multi-Level Parallelism (MLP). This programming approach, developed at NAS and outlined below, is distinct from the message passing paradigm of MPI. It offers parallelism at both the fine and coarse grained level, with communication latencies that are approximately 50-100 times lower than typical MPI implementations on the same platform. Such latency reductions offer the promise of performance scaling to very large CPU counts. The method draws on, but is also distinct from, the newly defined OpenMP specification, which uses compiler directives to support a limited subset of multi-level parallel operations. The NAS MLP method is general, and applicable to a large class of NASA CFD codes.

Taft, James R.↗
NASA NTRS1977

Silicon material task. Part 3: Low-cost silicon solar array project

The feasibility of a process for carbon reduction of low impurity silica in a plasma heat source was investigated to produce low-cost solar-grade silicon. Theoretical aspects of the reaction chemistry were studied with the aid of a computer program using iterative free energy minimization. These calculations indicate a threshold temperature exists at 2400 K below which no silicon is formed. The computer simulation technique of molecular dynamics was used to study the quenching of product species.

Roques, R. A.↗
NASA NTRS1997

Solar Cells for Lunar Application

In this work a preliminary study of the vacuum evaporation of silicon extracted from the lunar regolith has been undertaken. An electron gun vacuum evaporation system has been adapted for this purpose. Following the calibration of the system using ultra high purity silicon deposited on Al coated glass substrates, thin films of lunar Si were evaporated on a variety of crystalline substrates as well as on glass and lightweight 1 mil (25 microns) Al foil. Extremely smooth and featureless films with essentially semiconducting properties were obtained. Optical absorption analysis sets the bandgap (about 1.1 eV) and the refractive index (n=3.5) of the deposited thin films close to that of crystalline silicon. Secondary ion mass spectroscopy and energy dispersive spectroscopy analysis indicated that these films are essentially comparable to high purity silicon and that the evaporation process resulted in a substantial reduction of impurity levels. All layers exhibited a p-type conductivity suggesting the presence of a p-type dopant in the fabricated layers. While the purity of the 'lunar waste material' is below that of the 'microelectronic-grade silicon', the vacuum evaporated material properties seems to be adequate for the fabrication of average performance Si-based devices such as thin film solar cells. Taking into account solar cell thickness requirements (greater than 10 microns) and the small quantities of lunar material available for this study, solar cell fabrication was not possible. However, the high quality of the optical and electronic properties of evaporated thin films was found to be similar to those obtained using ultra-high purity silicon suggest that thin film solar cell production on the lunar surface with in situ resource utilization may be a viable approach for electric power generation on the moon.

Freundlich, Alex↗
NASA NTRS2003

High Mobility SiGe/Si Transistor Structures on Sapphire Substrates Using Ion Implantation

High mobility n-type SiGe/Si transistor structures have been fabricated on sapphire substrates by ion implanting phosphorus ions into strained 100 Angstrom thick silicon channels for the first time. The strained Si channels were sandwiched between Si(sub 0.7)Ge(sub 0.3) layers, which, in turn, were deposited on Si(sub 0.7)Ge(sub 0.3) virtual substrates and graded SiGe buffer layers. After the molecular beam epitaxy (MBE) film growth process was completed, ion thick silicon channels implantation and post-annealing were used to introduce donors. The phosphorous ions were preferentially located in the Si channel at a peak concentration of approximately 1x10(exp 18)/cu cm. Room temperature electron mobilities exceeding 750 sq cm/V-sec at carrier densities of 1x10(exp 12)/sq cm were measured. Electron concentration appears to be the key factor that determines mobility, with the highest mobility observed for electron densities in the 1 - 2x10(exp 12)/sq cm range.

Alterovitz, S. A.↗
DOE OSTI2020

Using a carbon vacancy reduction material to increase average carrier lifetime in a silicon carbide semiconductor device

A semiconductor die and a process for fabricating the semiconductor die are disclosed. The semiconductor die has a substrate and a silicon carbide (SiC) epitaxial structure on the substrate. The SiC epitaxial structure includes at least a first N-type SiC layer, at least a first P-type SiC layer, and carbon vacancy reduction material, which has been implanted into a surface of the SiC epitaxial structure. Further, the SiC epitaxial structure has been annealed to mobilize the carbon vacancy reduction material to diffuse carbon atoms substantially throughout the SiC epitaxial structure, thereby increasing an average carrier lifetime in the SiC epitaxial structure.

36 MATERIALS SCIENCE↗
NASA NTRS1988

Stabilizing Silicon-Ribbon Growth At Early Stages

Device mechanically stabilizes buttons from which silicon ribbons grown by dendritic-web process. Eliminates tendency for button to tip and interrupt pull because of asymmetry. Silicon seed hangs from holder through stabilizing tube. While button growing, tube elevated above melt surface. When ready for pulling of ribbon, tube comes to rest on button and prevents tipping. Large button used. Even if button assumes highly-asymmetrical weight distrubtion in early stages of growth, little danger of tipping and breakage of nascent ribbon.

Henry, Paul K.↗
NASA NTRS2004

SiC/SiC Composites for 1200 C and Above

The successful replacement of metal alloys by ceramic matrix composites (CMC) in high-temperature engine components will require the development of constituent materials and processes that can provide CMC systems with enhanced thermal capability along with the key thermostructural properties required for long-term component service. This chapter presents information concerning processes and properties for five silicon carbide (SiC) fiber-reinforced SiC matrix composite systems recently developed by NASA that can operate under mechanical loading and oxidizing conditions for hundreds of hours at 1204, 1315, and 1427 C, temperatures well above current metal capability. This advanced capability stems in large part from specific NASA-developed processes that significantly improve the creep-rupture and environmental resistance of the SiC fiber as well as the thermal conductivity, creep resistance, and intrinsic thermal stability of the SiC matrices.

DiCarlo, J. A.↗
NASA NTRS2001

Feasibility of Actively Cooled Silicon Nitride Airfoil for Turbine Applications Demonstrated

Nickel-base superalloys currently limit gas turbine engine performance. Active cooling has extended the temperature range of service of nickel-base superalloys in current gas turbine engines, but the margin for further improvement appears modest. Therefore, significant advancements in materials technology are needed to raise turbine inlet temperatures above 2400 F to increase engine specific thrust and operating efficiency. Because of their low density and high-temperature strength and thermal conductivity, in situ toughened silicon nitride ceramics have received a great deal of attention for cooled structures. However, the high processing costs and low impact resistance of silicon nitride ceramics have proven to be major obstacles for widespread applications. Advanced rapid prototyping technology in combination with conventional gel casting and sintering can reduce high processing costs and may offer an affordable manufacturing approach. Researchers at the NASA Glenn Research Center, in cooperation with a local university and an aerospace company, are developing actively cooled and functionally graded ceramic structures. The objective of this program is to develop cost-effective manufacturing technology and experimental and analytical capabilities for environmentally stable, aerodynamically efficient, foreign-object-damage-resistant, in situ toughened silicon nitride turbine nozzle vanes, and to test these vanes under simulated engine conditions. Starting with computer aided design (CAD) files of an airfoil and a flat plate with internal cooling passages, the permanent and removable mold components for gel casting ceramic slips were made by stereolithography and Sanders machines, respectively. The gel-cast part was dried and sintered to final shape. Several in situ toughened silicon nitride generic airfoils with internal cooling passages have been fabricated. The uncoated and thermal barrier coated airfoils and flat plates were burner rig tested for 30 min without and with air cooling. Without cooling, the surface temperature of the flat plate reached approximately 2350 F. Starting with computer aided design (CAD) files of an airfoil and a flat plate with internal cooling passages, the permanent and removable mold components for gel casting ceramic slips were made by stereolithography and Sanders machines, respectively. The gel-cast part was dried and sintered to final shape. Several in situ toughened silicon nitride generic airfoils with internal cooling passages have been fabricated. The uncoated and thermal barrier coated airfoils and flat plates were burner rig tested for 30 min without and with air cooling. Without cooling, the surface temperature of the flat plate reached approximately 2350 F. With cooling, the surface temperature decreased to approximately 1910 F--a drop of approximately 440 F. This preliminary study demonstrates that a near-net-shape silicon nitride airfoil can be fabricated and that silicon nitride can sustain severe thermal shock and the thermal gradients induced by cooling and, thus, is a viable candidate for cooled components.

Bhatt, Ramakrishna T.↗
NASA NTRS1979

Epitaxial silicon growth for solar cells

The epitaxial procedures, solar cell fabrication, and evaluation techniques are described. The development of baseline epitaxial solar cell structures grown on high quality conventional silicon substrates is discussed. Diagnostic layers and solar cells grown on four potentially low cost silicon substrates are considered. The crystallographic properties of such layers and the performance of epitaxially grown solar cells fabricated on these materials are described. An advanced epitaxial reactor, the rotary disc, is described along with the results of growing solar cell structures of the baseline type on low cost substrates. The add on cost for the epitaxial process is assessed and the economic advantages of the epitaxial process as they relate to silicon substrate selection are examined.

Daiello, R. V.↗
NASA NTRS2024

Making Rocket Fuel from Moon Rocks: Silicon-Liquid Oxygen (SiLOX) as a Hybrid Propellant

The research team at KSC explored the controlled passivation and burning of Lunar soil constituents in an oxygen combustion vessel for use as an in-space resource. Technologies such as carbothermal reduction (CaRD) and molten regolith electrolysis (MRE) are being developed to remove the oxygen for use and leave constituents in an enriched state. This leaves behind reduced compounds that can react with oxygen for heat generation. The team at KSC looked to explore the feasibility of controlling such reactions in a pure oxygen environment for potential technology integrations. Our proof-of-concept demonstrations have given promise to many potential applications for the controlled burning or combustion of nano- and porous silicon for silicon based, Lunar economy applications. The team at KSC was able to control the burn rate and total energy released effectively via pre-treatment of the nano-silicon in a muffle furnace at varying temperatures at one-hour durations. We created a new capability at KSC with the supporting safety documentation and procedural writeup. Our work highlights the need for greater investigation to understand the regenerative properties of the proposed porous silicon discs, and its viability of a thermal and electrical energy source. This work has demonstrated the proof-of-concept that elemental silicon is able to be combusted with gaseous and liquid oxygen in a controlled manner. This report provides such evidence as well as theoretical calculations and assumptions made for technologies that would be useful in Lunar surface operations with in-situ resources. The concepts are based on the assumption that oxygen extraction technologies from Lunar regolith processing will result in enriched silicon that may be adapted for the presented use cases. Additionally, the energy storage concept is able to be adapted for terrestrial use and integrated into already existing infrastructure.

Kenneth Engeling↗
DOE OSTI2018

The POLARBEAR-2 and Simons Array Focal Plane Fabrication Status

We present on the status of POLARBEAR-2 A (PB2-A) focal plane fabrication. The PB2-A is the first of three telescopes in the Simons Array, which is an array of three cosmic microwave background polarization-sensitive telescopes located at the POLARBEAR site in Northern Chile. As the successor to the PB experiment, each telescope and receiver combination is named as PB2-A, PB2-B, and PB2-C. PB2-A and -B will have nearly identical receivers operating at 90 and 150 GHz while PB2-C will house a receiver operating at 220 and 270 GHz. Each receiver contains a focal plane consisting of seven close-hex packed lenslet-coupled sinuous antenna transition edge sensor bolometer arrays. Each array contains 271 dichroic optical pixels, each of which has four TES bolometers for a total of 7588 detectors per receiver. We have produced a set of two types of candidate arrays for PB2-A. The first we call Version 11 (V11) uses a silicon oxide (SiOx) for the transmission lines and crossover process for orthogonal polarizations. The second we call Version 13 (V13) uses silicon nitride (SiNx) for the transmission lines and cross-under process for orthogonal polarizations. We have produced enough of each type of array to fully populate the focal plane of the PB2-A receiver. The average wirebond yield for V11 and V13 arrays is 93.2% and 95.6%, respectively. The V11 arrays had a superconducting transition temperature (T-c) of 452 +/- 15 mK, a normal resistance (R-n) of 1.25 +/- 0.20 Omega, and saturation powers of 5.2 +/- 1.0 pW and 13 +/- 1.2 pW for the 90 and 150 GHz bands, respectively. The V13 arrays had a superconducting transition temperature (T-c) of 456 +/- 6 mK, a normal resistance (R-n) of 1.1 +/- 0.2 Omega, and saturation powers of 10.8 +/- 1.8 pW and 22.9 +/- 2.6 pW for the 90 and 150 GHz bands, respectively. Production and characterization of arrays for PB2-B are ongoing and are expected to be completed by the summer of 2018. We have fabricated the first three candidate arrays for PB2-C but do not have any characterization results to present at this time.

CMB↗
DOE OSTI2026

Techno-Economic Comparison of Molten-Salt Electrolysis and Carbothermic Reduction for the Production of Metallurgical-Grade Silicon

Metallurgical-grade silicon (MG-Si) is an important source material for many industrial applications, including the manufacture of alloys, solar photovoltaics, and electronics. The process to refine raw materials into MG-Si is energy-intensive, with the predominant method of submerged-arc furnaces requiring energy consumption of approximately 11–13 kWh/kg Si. Recent research has discussed promising methods for reducing the energy required for the silicon production process, including the use of molten-salt electrolysis (MSE), a technique that offers potential savings in energy consumption without requiring carbon inputs for the process. This paper presents a techno-economic study of a potential industrial-scale MSE plant for MG-Si production to evaluate the trade-offs between capital and operating costs of the system. Capital costs are sourced from recent MG-Si plants and an existing cost model developed for MSE processes that includes the size of the plant and the operating temperature among its inputs. The results show that MSE technology has the potential to be an economically cost-competitive option for MG-Si production if the technology successfully scales to industrial production and matures enough to allow for financing costs similar to that of a comparably sized submerged-arc furnace plant.

14 SOLAR ENERGY↗
NASA NTRS1992

Fully-depleted silicon-on-sapphire and its application to advanced VLSI design

In addition to the widely recognized advantages of full dielectric isolation, e.g., reduced parasitic capacitance, transient radiation hardness, and processing simplicity, fully-depleted silicon-on-sapphire offers reduced floating body effects and improved thermal characteristics when compared to other silicon-on-insulator technologies. The properties of this technology and its potential impact on advanced VLSI circuitry will be discussed.

Offord, Bruce W.↗
NASA NTRS1985

Growth of the 889 per cm infrared band in annealed electron-irradiated silicon

Isothermal annealing of electron-irradiated Czochralski silicon has been studied at four different temperatures ranging from 304 to 350 C using infrared spectroscopy. At annealing temperatures above 300 C the irradiation-induced band at 830 per cm, usually attributed to a vacancy-oxygen complex (the A center), disappears and a new band at 889 per cm grows up. Within the experimental accuracy, the activation energy for the growth of this band is found to be identical with the value given by Stavola et al. for 'anomalous' oxygen diffusion in silicon. Also the frequency factors for the two processes are in reasonable agreement. The results show that a vacancy-assisted process may provide an explanation for enhanced motion of oxygen in silicon.

Svensson, B. G.↗
NASA NTRS1993

Using rapid infrared forming to control interfaces in titanium-matrix composites

Control of the fiber-matrix reaction during composite fabrication is commonly achieved by shortening the processing time, coating the reinforcement with relatively inert materials, or adding alloying elements to retard the reaction. To minimize the processing time, a rapid IR forming (RIF) technique for metal-matrix composite fabrication has been developed. Experiments have shown that the RIF technique is a quick, simple, and low-cost process to fabricate titanium-alloy matrix composites reinforced with either silicon carbide or carbon fibers. Due to short processing times (typically on the order of 1-2 minutes in an inert atmosphere for composites with up to eight-ply reinforcements), the interfacial reaction is limited and well controlled. Composites fabricated by this technique have mechanical properties that are comparable to (in several cases, superior to) those made with conventional diffusion-bonding techniques.

Warrier, Sunil G.↗
NASA NTRS1994

Making Porous Luminescent Regions In Silicon Wafers

Regions damaged by ion implantation stain-etched. Porous regions within single-crystal silicon wafers fabricated by straightforward stain-etching process. Regions exhibit visible photoluminescence at room temperature and might constitute basis of novel class of optoelectronic devices. Stain-etching process has advantages over recently investigated anodic-etching process. Process works on both n-doped and p-doped silicon wafers. Related development reported in article, "Porous Si(x)Ge(1-x) Layers Within Single Crystals of Si," (NPO-18836).

Fathauer, Robert W.↗
DOE OSTI2021

Thin-Entrance Window Process for Soft X-Ray Sensors

New free electron lasers, such as SLAC’s LCLS-II, will provide unique scientific imaging opportunities. In order to fully utilize these facilities, we need to develop detectors with shallow entrance windows that will enable detection of soft x-rays from 250 eV to 1.5 KeV. Achieving adequately shallow entrance windows is challenging because the high temperature anneal needed to activate the dopant also drives the dopant profile deeper, growing the region that is insensitive to soft x-rays. A new microwave annealing technology provides an efficient way to achieve shallow entrance windows in fully depleted high-resistivity silicon sensors. The microwave anneal technique can activate dopants at low substrate temperature, with minimal dopant diffusion, and can be used to fabricate both n-type and p-type entrance windows. SRP and SIMS measurements were used to verify dopant activation with negligible dopant diffusion. We then applied the microwave anneal process to a planar sensor wafer, using the new process to create the backside diode contact. Electrical test of the resulting sensors shows good reverse bias characteristics. The sensors have been bump-bonded to a read-out ASIC and used successfully to measure an Fe-55 x-ray spectrum. Process and device simulations were performed to characterize the quantum efficiency of the entrance window for soft x-rays. This technique is useful for other sensor applications requiring a shallow entrance window, including detectors for UV photons, low energy ions and low energy electrons.

47 OTHER INSTRUMENTATION↗
NASA NTRS1974

Loss of oxygen, silicon, sulfur, and potassium from the lunar regolith

The processes of formation and maturation of lunar soils lead to enrichments in the heavy stable isotopes of oxygen, silicon, sulfur, and potassium. The isotopic enrichment implies substantial losses of these elements from the moon. Vaporization by micrometeorite impact and by ion sputtering have removed at least 1% of the mass of the regolith. The losses of sulfur and potassium amount to at least 20-30% of their original abundance in the regolith.

Clayton, R. N.↗