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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 775 records · Page 43
All sourcesNASA NTRSDOE OSTI
NASA NTRS2011

What's on the Surface? Physics and Chemistry of Delta-Doped Surfaces

Outline of presentation: 1. Detector surfaces and the problem of stability 2. Delta-doped detectors 3. Physics of Delta-doped Silicon 4. Chemistry of the Si-SiO2 Interface 5. Physics and Chemistry of Delta-doped Surfaces a. Compensation b. Inversion c. Quantum exclusion. Conclusions: 1. Quantum confinement of electrons and holes dominates the behavior of delta-doped surfaces. 2. Stability of delta-doped detectors: Delta-layer creates an approx 1 eV tunnel barrier between bulk and surface. 3. At high surface charge densities, Tamm-Shockley states form at the surface. 4. Surface passivation by quantum exclusion: Near-surface delta-layer suppresses T-S trapping of minority carriers. 5. The Si-SiO2 interface compensates the surface 6. For delta-layers at intermediate depth, surface inversion layer forms 7. Density of Si-SiO2 interface charge can be extremely high (>10(exp 14)/sq cm)

detectors↗
DOE OSTI2025

Portable Distortion Free Large Solid Angle Coverage Detector

Neutron single crystal diffractometers require large solid angle coverage for optimum performance. This can be achieved by tiling flat detectors in a cylindrical or spherical geometry, but results in large gaps in detector coverage and parallax distortion. The detector edges exhibit degraded resolution, distortion, and gamma rejection. Since the detector edge regions are a significant fraction of the detector active area, they must be removed from the experimental data set, requiring extra beam time to collect enough analysis data. A spherical detector with a continuous surface would effectively address this issue while eliminating most boundary ‘dead’ areas. Here we report on the development of a novel hemispherical shaped neutron detector using seamlessly tiled readout modules to form the desired shape. The heart of the detector is a specially developed curved neutron scintillator coupled to high resolution silicon photomultiplier (SiPM) Anger cameras via custom made fiber optic tapers (FOTs). The detector has been assembled and initial tests have been conducted at the High Flux Isotope Reactor (HFIR) beamlines at Oak Ridge National Laboratory (ORNL). Here, in this work, we describe details of the scintillator design, fabrication and characterization, evaluation of individual detector modules, the details of the detector design implementation, and evaluation of the assembled detector at ORNL beamlines.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
NASA NTRS1993

Micromachined electron tunneling infrared sensors

The development of an improved Golay cell is reported. This new sensor is constructed entirely from micromachined silicon components. A silicon oxynitride (SiO(x)N(y)) membrane is deflected by the thermal expansion of a small volume of trapped gas. To detect the motion of the membrane, an electron tunneling transducer is used. This sensor detects electrons which tunnel through the classically forbidden barrier between a tip and a surface; the electron current is exponentially dependent on the separation between the tip and the surface. The sensitivity of tunneling transducers constructed was typically better than 10(exp -3) A/square root of Hz. Through use of the electron tunneling transducer, the scaling laws which have prevented the miniaturization of the Golay cell are avoided. This detector potentially offers low cost fabrication, compatibility with silicon readout electronics, and operation without cooling. Most importantly, this detector may offer better sensitivity than any other uncooled infrared sensor, with the exception of the original Golay cell.

Kenny, T. W.↗
DOE OSTI2025

The ATLAS Inner Tracker Strip Detector System for the Phase-II Large Hadron Collider Upgrade

ATLAS is currently preparing for the HL-LHC upgrade, with an all-silicon Inner Tracker (ITk) that will replace the current Inner Detector. The ITk will feature a pixel detector surrounded by a strip detector, with the strip system consisting of four barrel layers and 12 endcap disks. After successful completion of a large-scale prototyping program, final design reviews have been completed in key areas, such as sensors, modules, front-end electronics, and ASICs. We present an overview of the strip system and highlight the final design choices of sensors, modules, and ASICs. We summarize the results achieved during prototyping and the current status of production and pre-production on various detector components, with an emphasis on QA and QC procedures.

Duden, Emily (ORCID:0000000290929344)↗
NASA NTRS2014

Scalable Background-Limited Polarization-Sensitive Detectors for mm-wave Applications

We report on the status and development of polarization-sensitive detectors for millimeter-wave applications. The detectors are fabricated on single-crystal silicon, which functions as a low-loss dielectric substrate for the microwave circuitry as well as the supporting membrane for the Transition-Edge Sensor (TES) bolometers. The orthomode transducer (OMT) is realized as a symmetric structure and on-chip filters are employed to define the detection bandwidth. A hybridized integrated enclosure reduces the high-frequency THz mode set that can couple to the TES bolometers. An implementation of the detector architecture at Q-band achieves 90% efficiency in each polarization. The design is scalable in both frequency coverage, 30-300 GHz, and in number of detectors with uniform characteristics. Hence, the detectors are desirable for ground-based or space-borne instruments that require large arrays of efficient background-limited cryogenic detectors.

Millimeter-Wave Detectors↗
DOE OSTI2019

Development of thinned silicon sensors on 8” wafers (CRADA FRA-2015-0015 Final Report)

Sensors fabricated from high resistivity, float zone, silicon material have been the basis of vertex detectors and trackers for the last 30 years. The areas of these devices have increased from a few square cm to >200 m 2 for the existing CMS tracker. CMS and ATLAS upgrades will each require more than 200 m 2 of silicon and the CMS High Granularity Calorimeter (HGC) will require more than 600 m 2 . Cost and complexity of assembly of these devices is related to the area of each module, which in turn is set by the area of the silicon sensors. A move from 4” and 6” wafers (the only sizes currently available) to 8” diameter in volume production has the potential for savings of tens of millions of dollars in the detector upgrade programs at the Large Hadron Collider (LHC) and future experiments. In addition to large area, the devices must be radiation hard, which can be achieved by the use of sensors thinned to 200 microns or less. The combination of wafer thinning and large wafer diameter is a significant technical challenge, and is the subject of this work.

43 PARTICLE ACCELERATORS↗
DOE OSTI2020

Effects of trapped charge on the signal formation and detection efficiency for subsequent pulses in irradiated silicon sensors

Envisaged high energy physics experiments like the Future Circular Collider require unprecedented radiation hardness of the detectors, as well as short readout time due to high luminosity and occupancy. Silicon has proven to be extremely radiation hard. Sufficient signals can be recorded even at fluences close to 1 ∙ 1 0 16 n e q / cm 2 . Here, the signal formation was studied in silicon strip sensors, irradiated and annealed until the phenomenon of charge multiplication occurred. ATLAS12EC R0 mini sensors were tested by means of edge TCT measurements at temperatures around –20 °C. It was observed that the detection of subsequent signals separated up to several microseconds is altered by the charge trapped during the preceding pulses. The effects of trapped charge on the electrical configuration of a sensor are well known as a polarization or pumping effect in larger band-gap materials like diamond, but is often neglected for silicon at this relatively high temperature. The investigation of the effect created by trapped charges in silicon sensors using subsequent pulses allows to gain information on important parameters such as de-trapping times. Furthermore, it shows a severe impact on the sensor performance in a pile-up scenario. The irradiation fluence and hence the effective doping concentration, the temperature and the amount of initially created charge have a large impact on this phenomenon. The measurements presented help to characterize this phenomenon; particular attention was paid to the application point of view.

47 OTHER INSTRUMENTATION↗
NASA NTRS1986

A study of Si:In hybrid surface channel IRCCD devices

Hybrid silicon Infrared Charge Coupled Devices (IRCCDs) are evaluated for use as viable astronomical detectors. A Si:In photoconductor array which is bump-bonded to a silicon multiplexer is described. A summary of the device parameters is given.

Tollestrup, E.↗
DOE OSTI2022

Large scale SiPM testing for the Cosmic Muon Veto detector

A Cosmic Muon Veto (CMV) detector using extruded plastic scintillators is being built around the mini-Iron Calorimeter (mini-ICAL) detector at the transit campus of the India based Neutrino Observatory, Madurai. The extruded plastic scintillators will be embedded with wavelength shifting (WLS) fibres to absorb scintillating photons and propgate the re-emitted photons to the silicon-photomultipliers for the electronic signals. The CMV detector will require 760 extruded plastic scintillators to shield the mini-ICAL detector, and will require 3040 SiPMs for the readout. The design goal for the cosmic muon veto efficiency of the CMV is $>$99.99\% and fake veto rate less than 10$^{-5}$. Hence, every SiPM used in the detector needs to be characterised to satisfy the design goal of the CMV. For this, a large-scale testing system was developed, using an LED driver, to measure the gain and noise rate of each SiPM, and thus determine it's breakdown voltage ($V_{br}$) and optimum operating overvoltage ($V_{ov}$).

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2025

The STAR Forward Silicon Tracker

The Forward Silicon Tracker (FST) is a pivotal component of the forward upgrade of the Solenoidal Tracker at RHIC (STAR), designed to discern hadron charge signs with a momentum resolution better than 30% for 0.2 < p T < 2GeV/c in the 2.5 < η < 4 pseudorapidity range. Its compact design features three disks along the beam direction, minimized material budget, and scattering effects. The FST uses Hamamatsu’s p-in-n silicon strip sensors with a double metal layer that enables efficient signal routing to the readout electronics, enhancing overall detector performance. The flexible hybrid boards, essential for the readout system, are constructed with Kapton and copper layers to optimize signal handling and power distribution. These boards connect silicon strips to analogue pipeline ASIC APV25-S1 chips, which read up to 128 channels each. A cooling system with nonconducting, volatile NOVEC 7200 coolant at 22.2 °C mitigates ASIC-generated heat. Furthermore, the FST enhances forward tracking performance at STAR as an integral part of the forward upgrade.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
NASA NTRS2009

Alternative Packaging for Back-Illuminated Imagers

An alternative scheme has been conceived for packaging of silicon-based back-illuminated, back-side-thinned complementary metal oxide/semiconductor (CMOS) and charge-coupled-device image-detector integrated circuits, including an associated fabrication process. This scheme and process are complementary to those described in "Making a Back-Illuminated Imager With Back-Side Connections" (NPO-42839), NASA Tech Briefs, Vol. 32, No. 7 (July 2008), page 38. To avoid misunderstanding, it should be noted that in the terminology of imaging integrated circuits, "front side" or "back side" does not necessarily refer to the side that, during operation, faces toward or away from a source of light or other object to be imaged. Instead, "front side" signifies that side of a semiconductor substrate upon which the pixel pattern and the associated semiconductor devices and metal conductor lines are initially formed during fabrication, and "back side" signifies the opposite side. If the imager is of the type called "back-illuminated," then the back side is the one that faces an object to be imaged. Initially, a back-illuminated, back-side-thinned image-detector is fabricated with its back side bonded to a silicon handle wafer. At a subsequent stage of fabrication, the front side is bonded to a glass wafer (for mechanical support) and the silicon handle wafer is etched away to expose the back side. The frontside integrated circuitry includes metal input/output contact pads, which are rendered inaccessible by the bonding of the front side to the glass wafer. Hence, one of the main problems is to make the input/output contact pads accessible from the back side, which is ultimately to be the side accessible to the external world. The present combination of an alternative packaging scheme and associated fabrication process constitute a solution of the problem.

Pain, Bedabrata↗
NASA NTRS2000

Earth Observing-1 Advanced Land Imager: Radiometric Response Calibration

The Advanced Land Imager (ALI) is one of three instruments to be flown on the first Earth Observing mission (EO-1) under NASA's New Millennium Program (NMP). ALI contains a number of innovative features, including a wide field of view optical design, compact multispectral focal plane arrays, non-cryogenic HgCdTe detectors for the short wave infrared bands, and silicon carbide optics. This document outlines the techniques adopted during ground calibration of the radiometric response of the Advanced Land Imager. Results from system level measurements of the instrument response, signal-to-noise ratio, saturation radiance, and dynamic range for all detectors of every spectral band are also presented.

Mendenhall, J. A.↗
DOE OSTI2023

Radiation tolerance studies of the HV-mux GaNFETs for the HL-LHC ATLAS ITk Strip detector

For the High-Luminosity upgrade of the LHC, the current ATLAS inner detector will be replaced with a new silicon charged-particle tracker, the ITk, which consists of the ITk Pixel and the ITk Strip subdetector. The high voltage multiplexing (HV-Mux) GaNFETs are radiation-tolerant transistors that permit switching off high voltage to malfunctioning sensors on the ITk Strip modules. To ensure the reliability of the GaNFETs in the high radiation environment expected at the HL-LHC, a sample of the production batch was exposed to gamma radiation. Finally, the GaNFETs were characterized pre-irradiation and post-irradiation, and monitored during irradiation.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2020

Development of a FELIX based readout system for ITk strip hybrid module demonstrator for ATLAS Phase-II Upgrade

The Large Hadron Collider (LHC) will undergo a major upgrade around 2024 with a roughly tenfold increase in luminosity. It results in corresponding increases in particle rates and radiation doses that the current ATLAS Inner Tracking Detector cannot cope with. Therefore the ATLAS experiment will build a new all-silicon tracking system called the ITk (Inner Tracker) that includes an inside pixel detector close to the beam line and a strip detector in outside layer. Meanwhile the ATLAS experiment will adopt the Front-End Link eXchange (FELIX) system as the interface between the data acquisition and front-end electronics for all sub-detectors in the Phase II Upgrade. In this contribution, we present a prototype of FELIX based readout system for the strip hybrid module. Its hardware, firmware and software GUI application will be discussed, as well as integration test results.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2021

200 mm sensor development using bonded wafers

Sensors fabricated from high resistivity, float zone, silicon material have been the basis of vertex detectors and trackers for the last 30 years. The areas of these devices have increased from a few square cm to > 200m 2 for the existing CMS tracker. High Luminosity Large Hadron Collider (HL-LHC), CMS and ATLAS tracker upgrades will each require more than 200 m 2 of silicon and the CMS High Granularity Calorimeter (HGCAL) will require more than 600 m 2 . The cost and complexity of assembly of these devices is related to the area of each module, which in turn is set by the size of the silicon sensors. In addition to large area, the devices must be radiation hard, which requires the use of sensors thinned to 200 microns or less. The combination of wafer thinning and large wafer diameter is a significant technical challenge, and is the subject of this work. In this paper we describe work on development of thin sensors on 200 mm wafers using wafer bonding technology. Results of development runs with float zone, Silicon-on-Insulator and Silicon-Silicon bonded wafer technologies are reported.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
NASA NTRS2017

Characterization of Si-Membrane TES Bolometer Arrays for the HIRMES Instrument

The High Resolution Mid-Infrared Spectrometer (HIRMES) instrument will fly onboard NASA's airborne Stratospheric Observatory for Infrared Astronomy (SOFIA) in 2019. HIRMES will provide astronomers with a unique observing window (25 122 µm) for exploring the evolution of protoplanetary disks into young solar systems, and the composition of our Solar System. There are two focal plane detector arrays for the instrument: a high-resolution (/ = 100,000) 8x16 detector array with a target noise-equivalent power, NEP 3x10-18 W/Hz; and a low-resolution (/ = 2,000 19,000) 16x64 detector array with a target NEP 2x10-17 W/Hz. The detectors for both of these arrays are superconducting Mo/Au bilayer transition edge sensor (TES) bolometers on thin suspended single-crystal silicon membranes. Here we present our characterization results for the detectors in both arrays, including measurements of thermal conductance with comparison to phonon transport models, saturation power, noise, and array uniformity.

Instrumentation and Photography↗
NASA NTRSDate not supplied

u-Spec Spectrometers for the EXCLAIM Instrument

The EXperiment for Cryogenic Large-aperture Intensity Mapping (EXCLAIM) is a cryogenic balloon-borne instrument that will map carbon monoxide and singly-ionized carbon emission lines across redshifts from 0to 3.5, using an intensity mapping approach. EXCLAIM will broaden our understanding of these elemental and molecular gases, and the role they play in star formation processes across cosmic time scales. The focal plane of EXCLAIM’s cryogenic telescope features sixμ-Spec spectrometers.μ-Spec is a compact, integrated grating-analog spectrometer, which uses meandered superconducting niobium microstrip transmission lines on a single-crystal silicon dielectric to synthesize the grating. It features superconducting aluminum microwave kinetic inductance detectors (MKIDs), also in a microstrip architecture. The spectrometers for EXCLAIM couple to the telescope optics via a hybrid planar antenna coupled to a silicon lenslet. The spectrometers operate from420−540 GHz with a resolving power R=λ/∆λ= 512, and employ an array of 355 MKIDs on each spectrometer. The spectrometer design targets a noise equivalent power (NEP) of 2×10−18W/√Hz (defined at the input to the main lobe of the spectrometer lenslet beam, within a 9◦half width), enabled by the cryogenic telescope environment, the sensitive MKID detectors, and the low dielectric loss of single-crystal silicon. We report on these spectrometers under development for EXCLAIM, providing an overview of the spectrometer and component designs, the spectrometer fabrication process, fabrication developments since previous prototype demonstrations, and the current status of their development for the EXCLAIM mission.

EXCLAIM Instrument↗