Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “layers”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 775 records · Page 43
All sourcesNASA NTRSDOE OSTI
DOE OSTI2016

Cu2ZnSnSe4 Photovoltaic Absorber Layers Evaluated by Transmission X-Ray Microscopy Tomography: Composition Fluctuations on the Length Scale of Grains

The origins of open-circuit voltage deficits in Cu2ZnSnS(e)4-based solar cells have been an intense topic of research over the past few years as device efficiencies have never approached those of CuInGaSe2 based cells despite the materials sharing similar crystal and electronic structures. In this work, we use transmission X-ray microscopy tomography to investigate the length scales over which elemental fluctuations occur. We find and show evidence of micron-scale Cu to Zn anti-correlations over a previously inaccessible combination of resolution and sample size that is consistent with the length scale of grains in this material. This result yields further insight into the causes of the large open-circuit voltage deficits regularly seen in these devices as well as the challenges of achieving compositional homogeneity in this material.

composition fluctuations↗
DOE OSTI2017

Imaging the Thickness of Passivation Layers for Crystalline Silicon with Micron‐Scale Spatial Resolution Using Spectral Photoluminescence

Thin films deposited on crystalline silicon surfaces are critical components of many silicon‐based devices, including high‐efficiency photovoltaic cells. Knowledge of their optical and electronic properties is important in designing and fabricating efficient solar cells, especially as the device complexity increases and includes micron‐scale features. Here, a camera‐based photoluminescence (PL) technique is developed to image the thickness of specific passivating films on silicon wafers. The technique is entirely contactless and nondestructive, requires minimal sample preparation, and provides a large dynamic range in terms of field of view, with micron‐scale spatial resolution possible. It retains the advantages of PL imaging, a mainstream technique for photovoltaic material and device characterization, and it has some extra capabilities similar to those of ellipsometry. This newly developed technique is demonstrated on hydrogenated amorphous silicon and silicon nitride films, two important passivation technologies for high‐efficiency silicon solar cells.

Nguyen, Hieu T.↗
DOE OSTI2020

Synthesis, Crystal and Electronic Structure of Layered AM Sb Compounds ( A = Rb, Cs; M = Zn, Cd): Synthesis, Crystal and Electronic Structure of Layered AM Sb Compounds ( A = Rb, Cs; M = Zn, Cd)

Synthesis, crystal structure, thermal stability, and electronic band structure of four new metal antimonides AMSb (A = Rb, Cs; M = Zn, Cd) are reported. CsZnSb and RbZnSb crystallize in the hexagonal ZrBeSi structure type, in a P6 3 /mmc space group (no. 194, Z = 2) and unit cell dimensions of a = 4.5588(2)/4.5466(4) Å and c = 11.9246(6)/11.0999(10) Å. CsCdSb and RbCdSb crystallize in the tetragonal PbFCl structure type in a P4/nmm space group (no. 129; Z = 2) and unit cell parameters of a = 4.8884(5)/4.8227(3) Å and c = 8.8897(9)/8.5492(7) Å. All four compounds are air- and water-sensitive and are shown through DSC measurements to decompose between 975 K and 1060 K. Analysis of the calculated electronic band structure shows that the Zn-containing antimonides are topologically trivial narrow bandgap semiconductors, whereas Cd-containing compounds exhibit a band inversion along Γ-Z direction.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2018

Electron mass enhancement and magnetic phase separation near the Mott transition in double-layer ruthenates

Here, we present a detailed investigation of the specific heat of Ca 3 (Ru 1-x M x ) 2 O 7 (M = Ti, Fe, Mn) single crystals. Depending on the dopant and doping level, three distinct regions are present: a quasitwo-dimensional metallic state with antiferromagnetic (AFM) order formed by ferromagnetic bilayers (AFM-b), a Mott insulating state with G-type AFM order (G-AFM), and a localized state with a mixed AFM-b and G-AFM phase. Our specific heat data provide deep insights into the Mott transitions induced by Ti and Mn doping. We observed not only an anomalous large mass enhancement, but also an additional term in the specific heat, i.e., C ∝ T 2 , in the localized region. The C ∝ T 2 term is most likely due to long-wavelength excitations with both FM and AFM components. A decrease in the Debye temperature is observed in the G-type AFM region, indicating lattice softening associated with the Mott transition.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗