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At least 775 records · Page 43

Improving the oxygen redox reversibility of Li-rich battery cathode materials via Coulombic repulsive interactions strategy

The oxygen redox reaction in lithium-rich layered oxide battery cathode materials generates extra capacity at high cell voltages (i.e., >4.5 V). However, the irreversible oxygen release causes transition metal (TM) dissolution, migration and cell voltage decay. To circumvent these issues, we introduce a strategy for tuning the Coulombic interactions in a model Li-rich positive electrode active material, i.e., Li 1.2 Mn 0.6 Ni 0.2 O 2 . In particular, we tune the Coulombic repulsive interactions to obtain an adaptable crystal structure that enables the reversible distortion of TMO 6 octahedron and mitigates TM dissolution and migration. Moreover, this strategy hinders the irreversible release of oxygen and other parasitic reactions (e.g., electrolyte decomposition) commonly occurring at high voltages. When tested in non-aqueous coin cell configuration, the modified Li-rich cathode material, combined with a Li metal anode, enables a stable cell discharge capacity of about 240 mAh g -1 for 120 cycles at 50 mA g -1 and a slower voltage decay compared to the unmodified Li 1.2 Mn 0.6 Ni 0.2 O 2 .

25 ENERGY STORAGE↗

Local structure and ion storage properties of vanadate cathode materials regulated by the pre-alkalization

Aqueous Zn-ion batteries using mild acidic electrolytes utilizing a Zn 2+ /H + dual-ion storage mechanism have shown great potential in achieving high energy density comparable to non-aqueous lithium-ion batteries. Here, this study reveals that hydrated alkali-ions regulate the formation of alkali-intercalated vanadate layered compounds. Among various vanadate materials, lithium-intercalated vanadate has the largest interlayer spacing and most disordered local structure, exhibiting the largest storage capacity of 308 mA h g –1 at 0.05 A g –1 for Zn 2+ /H + dual-ion storage and improved charge transfer and transport kinetics and cycling performance, evidenced by in situ X-ray diffraction and ex situ X-ray total scattering and pair distribution function analysis. Our study provides new insight into designing layered vanadate materials for high-capacity aqueous batteries.

25 ENERGY STORAGE↗

Electrochemical cells and methods of manufacturing the same

Electrochemical cells and methods of making electrochemical cells are described herein. In some embodiments, an apparatus includes a multi-layer sheet for encasing an electrode material for an electrochemical cell. The multi-layer sheet including an outer layer, an intermediate layer that includes a conductive substrate, and an inner layer disposed on a portion of the conductive substrate. The intermediate layer is disposed between the outer layer and the inner layer. The inner layer defines an opening through which a conductive region of the intermediate layer is exposed such that the electrode material can be electrically connected to the conductive region. Thus, the intermediate layer can serve as a current collector for the electrochemical cell.

25 ENERGY STORAGE↗

Electrostatic powder spreading for metal powder bed fusion applications

Typical powder bed fusion processes spread each layer of powder by pushing it across the build area with a spreader bar or roller. While simple, these methods require good flowing powder and do not have the ability to place more than one powder type per layer. This naturally limits the ability to incorporate more than one material onto each powder layer in powder bed additive manufacturing processes. Here we demonstrate electrostatic powder spreading, a method to deposit a powder layer without mechanical contact with the previous layers. Electrostatic powder spreading (ESPS) uses an electric field formed between a powder container and a counter electrode to move powder particles from the container to the powder bed. We show that the rate at which powder is deposited can be controlled by adjusting the strength of the electric field. Correspondingly, the deposited layer thickness is controlled by the strength of the electric field and the recoating speed. To demonstrate the feasibility of ESPS for laser powder bed fusion powder spreading, nearly fully dense (> 99.8%) coupons were built in a commercial L-PBF machine using the ESPS setup. Finally, we achieve 2D patterning of a single layer by using an array of electrodes and switching the applied electric field on and off. ESPS represents a method to produce an arbitrary patterned multi-material powder bed without complicated powder removal steps and easy implementation into existing L-PBF machines. Furthermore, ESPS presents an opportunity to build parts with 3D gradients in material properties.

36 MATERIALS SCIENCE↗

Impact of the Atomic Structure at the BiVO 4 /TiO 2 Interface on the Electronic Properties and Performance of BiVO 4 /TiO 2 Photoanodes

In photoelectrochemical cells, semiconductor electrodes are usually interfaced with protection layers to extend their stability. Ideally, the protection layer should not decrease photocurrent generation. Hence, the conduction band minimum (CBM) and valence band maximum (VBM) of the protection layer should appropriately align with those of the underlying semiconductor electrode to facilitate the desired interfacial charge transfer with minimal interfacial recombination. However, predicting interfacial band alignment can be challenging, as it may vary depending on the detailed interfacial atomic structure. Investigating the effect of the atomic structure at the semiconductor/protection layer junction on the band alignment is also challenging as it requires samples with varied interfaces without altering the semiconductor and protection layers. Here, we considered TiO 2 , the most widely used material as a protection layer, interfaced with a BiVO 4 photoanode, and we fabricated two n-type BiVO 4 (010)/TiO 2 photoanodes where a thin (∼4 nm) amorphous TiO 2 layer was deposited by atomic layer deposition (ALD). While the individual BiVO 4 (010) and TiO 2 layers were identical in these two samples, we modified the interfacial atomic structure at the BiVO 4 /TiO 2 junction by changing which precursor, Ti or O, was introduced first upon deposition of TiO 2 . By experimentally and computationally investigating the differences in these two samples, we show that the band alignments between BiVO 4 and TiO 2 at the interface may not be straightforwardly predicted by the CBM and VBM of bulk BiVO 4 and TiO 2 and that interfacial atomic arrangements can have a marked impact on the electronic properties and photoelectrochemical performance of the BiVO 4 (010)/TiO 2 photoanode.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Carbide-based fuel assembly for thermal propulsion applications

Carbide-based fuel assembly includes outer structural member of ceramic matrix composite material, the interior surface of which is lined in higher temperature regions with an insulation layer of porous refractory ceramic material. Continuous insulation layer extends the length of the fuel assembly or separate insulation layer sections have a thickness increasing step-wise along the length of the fuel assembly from upper (inlet) section towards bottom (outlet) section. A fuel element positioned inward of the insulation layer and between support meshes has a fuel composition including HALEU and the form of a plurality of individual elongated fuel bodies or one or more fuel monolith bodies containing coolant flow channels. Fuel assemblies are distributively arranged in a moderator block, with upper end of the outer structural member attached to an inlet for propellant and lower end of the outer structural member operatively interfaced with a nozzle forming a nuclear thermal propulsion reactor.

Barringer, Eric A.↗

General trends of superconducting pairing and magnetic correlations in the Ruddlesden-Popper nickelate 𝑚-layered superconductors La 𝑚+1 ⁢Ni 𝑚 ⁢O 3⁢𝑚+1

Here, we report a comprehensive theoretical analysis of the Ruddlesden-Popper layered nickelates La 𝑚+1 ⁢Ni 𝑚 ⁢O 3⁢𝑚+1 (𝑚 = 1 to 6) under pressure. These materials have recently received significant attention due to the discovery of superconductivity in some nickelates under pressure. Our results suggest that, while these Ruddlesden-Popper layered nickelates display many similarities, they also show noticeable differences. One of the common features of La 𝑚+1 ⁢Ni 𝑚 ⁢O 3⁢𝑚+1 is that the electronic states near the Fermi level are mainly contributed by Ni 3⁢𝑑 orbitals, slightly hybridized with O 2⁢𝑝 orbitals. The Ni 𝑑 3⁢𝑧 2 −𝑟 2 orbitals display bonding-antibonding, or bonding-antibonding-nonbonding, characteristic splittings, depending on the even or odd number of stacking layers 𝑚. In addition, the ratio of the in-plane interorbital hopping between 𝑑 3⁢𝑧 2 −𝑟 2 and 𝑑 𝑥 2 −𝑦 2 orbitals and in-plane intraorbital hopping between 𝑑 𝑥 2 −𝑦 2 orbitals was found to be large in La 𝑚+1 ⁢Ni 𝑚 ⁢O 3⁢𝑚+1 (𝑚 = 1 to 6), and this ratio increases from 𝑚 = 1 to 𝑚 = 6, suggesting that the in-plane hybridization will increase as the layer number 𝑚 increases. In contrast to the dominant 𝑠 ± -wave state driven by spin fluctuations in the bilayer La 3 ⁢Ni 2⁢ O 7 and trilayer La 4 ⁢Ni 3 ⁢O 10 , two nearly degenerate 𝑑 𝑥 2 −𝑦 2 -wave and 𝑠 ± -wave leading states were obtained in the four-layer stacking La 5⁢ Ni 4 ⁢O 13 and five-layer stacking La 6 ⁢Ni 5 ⁢O 16 . The leading 𝑠 ± -wave state was recovered in the six-layer material La 7 ⁢Ni 6 ⁢O 19 with slightly higher calculated pairing strength 𝜆 than that of the 𝑑 𝑥 2 −𝑦 2 -wave state. All this evidence suggests that both 𝑠 ± -wave and 𝑑 𝑥 2 −𝑦 2 -wave channels are strongly competing in the high-order niceklates based on our random-phase approximation calculations. In general, at the level of the random-phase approximation treatment, the superconducting transition temperature 𝑇 𝑐 decreases in stoichiometric bulk systems from the bilayer La 3 ⁢Ni 2 ⁢O 7 to the six-layer La 7 ⁢Ni 6 ⁢O 19 , despite the 𝑚-dependent dominant pairing. Both in-plane and out-of-plane magnetic correlations are found to be quite complex. Within the in-plane direction, we obtained the peak of the magnetic susceptibility at 𝐪 = (0.6⁢𝜋, 0.6⁢𝜋) for La 5 ⁢Ni 4 ⁢O 13 (𝑚 = 4) and La 7 ⁢Ni 6 ⁢O 19 (𝑚 = 6) and at 𝐪 = (0.7⁢𝜋, 0.7⁢𝜋) for La 6⁢ Ni 5⁢ O 16 (𝑚 = 5). Along the out-of-plane direction, four layers are coupled as ↓−↑−↑−↓ in La 5 ⁢Ni 4⁢ O 13 , five layers are coupled as ↑−↑−↓−↑−↑ in La 6 ⁢Ni 5 ⁢O 16 , and six layers are coupled as ↑−↓−↓−↑−↑−↓ in La 7 ⁢Ni 6 ⁢O 19 .

Zhang, Yang [Univ. of Tennessee, Knoxville, TN (Un↗

Hybrid organic light emitting device

An OLED device comprises an anode and a cathode, and at least one graded emissive layer disposed between the anode and the cathode, the graded emissive layer comprising first and second materials, wherein a concentration of the first material increases continuously from an anode side of the graded emissive layer to a cathode side of the graded emissive layer, and a concentration of the second material decreases continuously from the anode side of the graded emissive layer to the cathode side of the graded emissive layer. An OLED device comprising a graded emissive layer and a hybrid white OLED device are also described.

Forrest, Stephen R.↗

Effect of cold-cap-bottom shear stress on primary foam stability

Here, we analyze the heat transfer between the melt pool and the layer of reacting materials called cold cap, which is the determining factor for the glass production rate in Joule-heated air-bubbled nuclear waste glass melters. We consider the effects of bubbling rate, melt viscosity, melt thermal conductivity, conversion kinetics, and shear rate at the cold-cap bottom, and develop simple relationships for the cold-cap bottom temperature and glass production rate. We show that the melt convection enhances the heat transfer to the cold cap by suppressing the thermal boundary layer and primary foam, while the conversion kinetics opposes these effects. Additionally, we mention how dissolving silica particles affects the primary foam stability and discuss the limitations of the presented approach for vigorously foaming feeds.

36 MATERIALS SCIENCE↗

Electrochemical cells and methods of manufacturing the same

Electrochemical cells and methods of making electrochemical cells are described herein. In some embodiments, an apparatus includes a multi-layer sheet for encasing an electrode material for an electrochemical cell. The multi-layer sheet including an outer layer, an intermediate layer that includes a conductive substrate, and an inner layer disposed on a portion of the conductive substrate. The intermediate layer is disposed between the outer layer and the inner layer. The inner layer defines an opening through which a conductive region of the intermediate layer is exposed such that the electrode material can be electrically connected to the conductive region. Thus, the intermediate layer can serve as a current collector for the electrochemical cell.

Bazzarella, Ricardo↗

Electrochemical cells and methods of manufacturing the same

Electrochemical cells and methods of making electrochemical cells are described herein. In some embodiments, an apparatus includes a multi-layer sheet for encasing an electrode material for an electrochemical cell. The multi-layer sheet including an outer layer, an intermediate layer that includes a conductive substrate, and an inner layer disposed on a portion of the conductive substrate. The intermediate layer is disposed between the outer layer and the inner layer. The inner layer defines an opening through which a conductive region of the intermediate layer is exposed such that the electrode material can be electrically connected to the conductive region. Thus, the intermediate layer can serve as a current collector for the electrochemical cell.

Bazzarella, Ricardo↗

Electrochemical cells and methods of manufacturing the same

Electrochemical cells and methods of making electrochemical cells are described herein. In some embodiments, an apparatus includes a multi-layer sheet for encasing an electrode material for an electrochemical cell. The multi-layer sheet including an outer layer, an intermediate layer that includes a conductive substrate, and an inner layer disposed on a portion of the conductive substrate. The intermediate layer is disposed between the outer layer and the inner layer. The inner layer defines an opening through which a conductive region of the intermediate layer is exposed such that the electrode material can be electrically connected to the conductive region. Thus, the intermediate layer can serve as a current collector for the electrochemical cell.

Bazzarella, Ricardo↗

Realization of AlSb in the Double-Layer Honeycomb Structure: A Robust Class of Two-Dimensional Material

Exploring new two-dimensional (2D) van der Waals (vdW) systems is at the forefront of materials physics. Here, through molecular beam epitaxy on graphene-covered SiC(0001), we report successful growth of AlSb in the double-layer honeycomb (DLHC) structure, a 2D vdW material which has no direct analogue to its 3D bulk and is predicted kinetically stable when freestanding. The structural morphology and electronic structure of the experimental 2D AlSb are characterized with spectroscopic imaging scanning tunneling microscopy and cross-sectional imaging scanning transmission electron microscopy, which compare well to the proposed DLHC structure. The 2D AlSb exhibits a bandgap of 0.93 eV versus the predicted 1.06 eV, which is substantially smaller than the 1.6 eV of bulk. We also attempt the less-stable InSb DLHC structure; however, it grows into bulk islands instead. Here, the successful growth of a DLHC material here opens the door for the realization of a large family of novel 2D DLHC traditional semiconductors with unique excitonic, topological, and electronic properties.

36 MATERIALS SCIENCE↗

Observation of momentum-dependent charge density wave gap in a layered antiferromagnet ${\textrm{Gd}}{\textrm{Te}}_{3}$

Charge density wave (CDW) ordering has been an important topic of study for a long time owing to its connection with other exotic phases such as superconductivity and magnetism. The RTe 3 (R = rare-earth elements) family of materials provides a fertile ground to study the dynamics of CDW in van der Waals layered materials, and the presence of magnetism in these materials allows to explore the interplay among CDW and long range magnetic ordering. Here, we have carried out a high-resolution angle-resolved photoemission spectroscopy (ARPES) study of a CDW material GdTe 3 , which is antiferromagnetic below ~ 12 K, along with thermodynamic, electrical transport, magnetic, and Raman measurements. Our ARPES data show a two-fold symmetric Fermi surface with both gapped and ungapped regions indicative of the partial nesting. The gap is momentum dependent, maximum along $\overline{Γ}$ - $\overline{Z}$ and gradually decreases going towards $\overline{Γ}$ - $\overline{Z}$. Our study provides a platform to study the dynamics of CDW and its interaction with other physical orders in two- and three dimensions.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Elucidating the Role of Dimensionality on the Electronic Structure of the Van der Waals Antiferromagnet NiPS 3

Abstract The sustained interest in investigating magnetism in the 2D limit of insulating antiferromagnets is driven by the possibilities of discovering, or engineering, novel magnetic phases through layer stacking. However, due to the difficulty of directly measuring magnetic interactions in 2D antiferromagnets, it is not yet understood how intra layer magnetic interactions in insulating , strongly correlated, materials can be modified through layer proximity. Herein, the impact of reduced dimensionality in the model van der Waals antiferromagnet NiPS 3 is explored by measuring electronic excitations in exfoliated samples using Resonant Inelastic X‐ray Scattering (RIXS). The resulting spectra shows systematic broadening of NiS 6 multiplet excitations with decreasing layer count from bulk down to three atomic layers (3L). It is shown that these trends originate from a decrease in transition metal‐ligand and ligand–ligand hopping integrals, and by charge‐transfer energy evolving from Δ = 0.83 eV in the bulk to 0.37 eV in 3L NiPS 3 . Relevant intralayer magnetic exchange integrals computed from the electronic parameters exhibit a decrease in the average interaction strength with thickness. This study underscores the influence of inter layer electronic interactions on intra layer ones in insulating magnets, indicating that magnetic Hamiltonians in few‐layer insulating magnets can greatly deviate from their bulk counterparts.

36 MATERIALS SCIENCE↗

Characterization of Highly Thermally Conductive Organic Substrates for a Double-Sided Cooled Power Module

Abstract Silicon-Carbide (SiC) power devices have become a promising option for traditional Silicon (Si) due to the superior material properties. To fully take advantage of the SiC devices, a high-performance power device packaging solution is necessary. This study proposes a cost-effective double-sided cooled (DSC) 1.2 kV SiC half-bridge power module using organic epoxy-resin composite dielectric (ERCD) substrates. The high mechanical and thermal performance of the power module is achieved by the low-modulus, moderate thermal conductivity, and relatively thin (120 μm) layer of ERCD material compared with traditional metal-clad ceramic approaches. This novel organic dielectric can withstand high voltage (5 kV @ 120 μm) and operate up to 250°C continuously, which is indispensable for high power applications. The thermal modeling results show that the equivalent thermal resistance junction-to-case (Rjc_eq) of the DSC power module using dual direct bonded copper (DBC) is 17% higher than the dual ERCD configuration. Furthermore, a non-insulated DSC power module concept is proposed for maximizing thermal performance by considering thermal vias in the ERCD substrate and direct-soldered heat sink. A thought process for optimization of thermal via design is demonstrated and it shows up to 24% of improvement on thermal performance compared with the insulated DSC power module.

Double-sided cooling, epoxy-resin composite dielec↗

Three dimensional vertically structured electronic devices

In one embodiment, a method of forming a vertical transistor includes forming a layer comprising a semiconductor material above a substrate, defining three dimensional (3D) structures in the layer, forming a second region in at least one vertical sidewall of each 3D structure, and forming an isolation region between the 3D structures. In another embodiment, an apparatus includes at least one vertical transistor, where the at least one vertical transistor includes: a substrate comprising a semiconductor material, an array of 3D structures above the substrate, and an isolation region positioned between the 3D structures. Each 3D structure includes the semiconductor material. Each 3D structure also includes a first region having a first conductivity type and a second region having a second conductivity type, the second region including a portion of at least one vertical sidewall of the 3D structure.

Conway, Adam↗

Solid State Ionics: Materials Development by Multiscale Modeling and Advanced Manufacturing Techniques

Solid-state ionic materials are an important enabling technology for energy conversion and storage. Solid-state batteries would be a safer and higher energy density alternative to commercially available lithium ion batteries (LIB), however their implementation requires ion conduction in solids at room temperature to occur on the same level as the current generation of liquid electrolytes. Microstructural modifications have been demonstrated to play a major role on ion transport through the control of grain boundary interfaces, which traditionally serve as “blocking” layers. Ultimately, these materials will be fabricated in thin films form as electrolytes in order to minimize ohmic losses in electrochemical devices. This work uses advanced manufacturing techniques in combination with theoretical modeling to implement a science-based approach in the deposition of thin films ion conductors with controlled microstructures used in ceramic energy conversion and storage devices.

25 ENERGY STORAGE↗