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At least 775 records · Page 43
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Advancement of LANSCE accelerator facility as a 1-MW Fusion Prototypic Neutron Source

The Fusion Prototypic Neutron Source (FPNS) is considered to be a testbed for scientific understanding of material degradation in future nuclear fusion reactors (Zinkle and Moeslang, 2013; Summary Report on the FPNS Workshop, 2018; Pitcher et al., 2019). The primary mission of FPNS is to provide a damage rate in iron samples of 8-11 dpa/calendar year with He/dpa ratio of 10 appm in irradiation volume of 50 cm 3 or larger with irradiation temperature 300–1000 °C and flux gradient less than 20%/cm in the plane of the sample. The Los Alamos Neutron Science Center (LANSCE) is an attractive candidate for the FPNS project. The Accelerator Facility was designed and operated for an extended period as a 0.8-MW Meson Factory. The existing setup of the LANSCE accelerator complex can nearly fulfill requirements of the fusion neutron source station. The primary function of the upgraded accelerator systems is the safe and reliable delivery of a 1.25-mA continuous proton beam current at 800-MeV beam energy from the switchyard to the target assembly to create 1 MW power of proton beam interacting with a solid tungsten target. The present study describes existing accelerator setup and further development required to meet the needs of FPNS project.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
NASA NTRS1981

Solar cell development for the power extension package

The PEP is a 32 kilowatt flexible substrate, retrievable, solar array system for use on the Space Shuttle. Solar cell costs will be reduced by increasing cell area and simplifying cell and coverglass fabrication processes and specifications. The cost goal is to produce cells below $30 per watt. Two and ten ohm-cm silicon cells were investigated. In phase I of the cell development program a few thousand candidate cells will be produced and evaluated for utility and quality. In phase II a large number of cells will be fabricated to verify production readiness and cell yields and costs. This schedule is compatible with PEP initial operational capability in 1984. Approximately 140,000 large area (5.9 x 5.9 cm) cells will be required for two PEP solar arrays. The status of the cell development and testing, including a radiation damage test and side-by-side comparison of candidate cell types with pre- and post-irradiation airplane calibration of outer space short-circuit current, is reported.

Baraona, C. R.↗
NASA NTRS1984

Radiation effects in silicon and gallium arsenide solar cells using isotropic and normally incident radiation

Several types of silicon and gallium arsenide solar cells were irradiated with protons with energies between 50 keV and 10 MeV at both normal and isotropic incidence. Damage coefficients for maximum power relative to 10 MeV were derived for these cells for both cases of omni-directional and normal incidence. The damage coefficients for the silicon cells were found to be somewhat lower than those quoted in the Solar Cell Radiation Handbook. These values were used to compute omni-directional damage coefficients suitable for solar cells protected by coverglasses of practical thickness, which in turn were used to compute solar cell degradation in two proton-dominated orbits. In spite of the difference in the low energy proton damage coefficients, the difference between the handbook prediction and the prediction using the newly derived values was negligible. Damage coefficients for GaAs solar cells for short circuit current, open circuit voltage, and maximum power were also computed relative to 10 MeV protons. They were used to predict cell degradation in the same two orbits and in a 5600 nmi orbit. Results show the performance of the GaAs solar cells in these orbits to be superior to that of the Si cells.

Anspaugh, B. E.↗
NASA NTRS1984

Radiation effects in silicon and gallium arsenide solar cells using isotropic and normally incident radiation

Several types of silicon and gallium arsenide solar cells were irradiated with protons with energies between 50 keV and 10 MeV at both normal and isotropic incidence. Damage coefficients for maximum power relative to 10 MeV were derived for these cells for both cases of omni-directional and normal incidence. The damage coefficients for the silicon cells were found to be somewhat lower than those quoted in the Solar Cell Radiation Handbook. These values were used to compute omni-directional damage coefficients suitable for solar cells protected by coverglasses of practical thickness, which in turn were used to compute solar cell degradation in two proton-dominated orbits. In spite of the difference in the low energy proton damage coefficients, the difference between the handbook prediction and the prediction using the newly derived values was negligible. Damage coefficients for GaAs solar cells for short circuit current, open circuit voltage, and maximum power were also computed relative to 10 MeV protons. They were used to predict cell degradation in the same two orbits and in a 5600 nmi orbit. Results show the performance of the GaAs solar cells in these orbits to be superior to that of the Si cells.

Anspaugh, B. E.↗
DOE OSTI2023

High Power Targetry R&D and support for future generation accelerator

A high-power target system is a key beam element to complete future High Energy Physics (HEP) experiments. The target endures high power pulsed beam, leading to high cycle thermal stresses/pressures and thermal shocks. The increased beam power will also create significant challenges such as corrosion and radiation damage that can cause harmful effects on the material and degrade their mechanical and thermal properties during irradiation. This can eventually lead to the failure of the material and drastically reduce the lifetime of targets and beam intercepting devices. Designing a reliable target is already a challenge for MW class facilities today and has led several major accelerator facilities to operate at lower power due to target concerns. With present plans to increase beam power for next generation accelerator facilities in the next decade and the multi-year time-scale to acquire the knowledge on material behavior under such extreme environment, timely R&D of robust high-power targets is critical to fully secure the physics benefits of ambitious accelerator power upgrades. The next generation of high-power targets for future accelerators will use more complex geometries, novel materials, and new concepts allowing better high heat flux cooling methods. Advanced numerical simulations need to be developed to satisfy the physical design requirements of reliable beam-intercepting devices. In parallel, radiation hardened beam instrumentation irradiation methods for high-power targets must be further developed. Additional irradiation facilities are needed since only a few facilities worldwide offer beams for target testing, and the beam provided may not be appropriate for the specific facility or project. Thus, a comprehensive research and development program must be implemented to address the challenges that multi-MW targets face.

Pellemoine, F.↗
NASA NTRS1993

Diffusion length variation and proton damage coefficients for InP/In(x)Ga(1-x)As/GaAs solar cells

Indium phosphide solar cells are more radiation resistant than gallium arsenide and silicon solar cells, and their growth by heteroepitaxy offers additional advantages leading to the development of lighter, mechanically strong and cost-effective cells. Changes in heteroepitaxial InP cell efficiency under 0.5 and 3 MeV proton irradiations are explained by the variation in the minority-carrier diffusion length. The base diffusion length versus proton fluence is calculated by simulating the cell performance. The diffusion length damage coefficient K(L) is plotted as a function of proton fluence.

Jain, R. K.↗
NASA NTRS2001

Comparison of F ratios generated from interphase and metaphase chromosome damage induced by high doses of low- and high-LET radiation

Although biophysical models predict a difference in the ratio of interchromosomal to intrachromosomal interarm exchanges (F ratio) for low- and high-LET radiations, few experimental data support this prediction. However, the F ratios in experiments to date have been generated using data on chromosome aberrations in samples collected at the first postirradiation mitosis, which may not be indicative of the aberrations formed in interphase after exposure to high-LET radiations. In the present study, we exposed human lymphocytes in vitro to 2 and 5 Gy of gamma rays and 3 Gy of 1 GeV/nucleon iron ions (LET = 140 keV/micrometer), stimulated the cells to grow with phytohemagglutinin (PHA), and collected the condensed chromosomes after 48 h of incubation using both chemically induced premature chromosome condensation (PCC) and the conventional metaphase techniques. The PCC technique used here condenses chromosomes mostly in the G(2) phase of the cell cycle. The F ratio was calculated using data on asymmetrical chromosome aberrations in both the PCC and metaphase samples. It was found that the F ratios were similar for the samples irradiated with low- and high-LET radiation and collected at metaphase. However, for irradiated samples assayed by PCC, the F ratio was found to be 8.2 +/- 2.0 for 5 Gy gamma rays and 5.2 +/- 0.9 for 3 Gy iron ions. The distribution of the aberrations indicated that, in the PCC samples irradiated with iron ions, most of the centric rings occurred in spreads containing five or more asymmetrical aberrations. These heavily damaged cells, which were either less likely to reach mitosis or may reach mitosis at a later time, were responsible for the difference in the F ratios generated from interphase and metaphase analysis after exposure to iron ions.

NASA Discipline Radiation Health↗
NASA NTRS1982

Effects of processing and dopant on radiation damage removal in silicon solar cells

Gallium and boron doped silicon solar cells, processed by ion implantation followed by either laser or furnace anneal were irradiated by 1 MeV electrons and their postirradiation recovery by thermal annealing was determined. During the postirradiation anneal, gallium doped cells prepared by both processes recovered more rapidly and exhibited none of the severe reverse annealing observed for similarly processed 2 ohm-cm boron doped cells. Ion implanted furnace annealed 0.1 ohm-cm boron doped cells exhibited the lowest post-irradiation annealing temperatures after irradiation. The drastically lowered recovery temperature is attributed to the reduced oxygen and carbon content of the 0.1 ohm-cm cells. Analysis based on defect properties and annealing kinetics indicates that further reduction in annealing temperature is attainable with further reduction in the silicon's carbon and/or divacancy content after irradiation.

Weinberg, I.↗
DOE OSTI2021

Remediating neutron damage in large area planar Ge-DSSD with amorphous germanium contacts through annealing and pulse-height correction

Large area, position sensitive planar germanium detectors offer new opportunities in -ray spectroscopy. For in-beam studies remediating neutron damage is important. This work studied a mechanically cooled circular planar 9 × 1 cm wafer with orthogonal 16 × 16 amorphous germanium strip electrodes. Before neutron irradiation the wafer was heated in-cryostat to above 373 K for more than 24 h in order to test the robustness of the contacts and the mechanical cooler. No deterioration in performance was observed. The detector was then exposed to controlled doses of 2.2 MeV neutrons, produced from the 7 Li(p,n) 7 Be reaction until substantial damage was observed. Averaged over the surface of the wafer, a flux of 1.9(1) x 10 9 n/cm 2 was delivered. The detector then survived thermal cycling and 350 K (~77°C) annealing for 70 h which substantially reduced hole trapping. pulse-height correction is investigated to further mitigate the neutron damage. Higher temperature annealing at 365 K was not successful.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
NASA NTRS1976

Prediction and measurement of radiation damage to CMOS devices on board spacecraft

The CMOS Radiation Effects Measurement (CREM) experiment is presently being flown on the Explorer-55. The purpose of the experiment is to evaluate device performance in the actual space radiation environment and to correlate the respective measurements to on-the-ground laboratory irradiation results. The experiment contains an assembly of C-MOS and P-MOS devices shielded in front by flat slabs of aluminum and by a practically infinite shield in the back. Predictions of radiation damage to C-MOS devices are based on standard environment models and computational techniques. A comparison of the shifts in CMOS threshold potentials, that is, those measured in space to those obtained from the on-the-ground simulation experiment with Co-60, indicates that the measured space damage is smaller than predicted by about a factor of 2-3 for thin shields, but agrees well with predictions for thicker shields.

Cliff, R. A.↗
NASA NTRS1982

Thermal annealing of radiation damage in CMOS ICs in the temperature range -140 C to +375 C

Annealing of radiation damage was investigated in the commercial, Z- and J-processes of the RCA CD4007A ICs in the temperature range from -140 C to +375 C. Tempering curves were analyzed for activation energies of thermal annealing, following irradiation at -140 C. It was found that at -140 C, the radiation-induced shifts in the threshold potentials were similar for all three processes. The radiation hardness of the Z- and J-process is primarily due to rapid annealing of radiation damage at room temperature. In the region -140 to 20 C, no dopant-dependent charge trapping is seen, similar to that observed at higher temperatures. In the unbiased Z-process n-channels, after 1 MeV electron irradiation, considerable negative charge remains in the gate oxide.

Danchenko, V.↗
NASA NTRS2016

Effects of Simulated Spaceflight on Mitochondrial Oxidative Stress in Bone Remodelling

Microgravity and ionizing radiation may contribute to cellular stress; resulting in increased generation of reactive oxygen species (ROS), DNA damage, cell cycle arrest, and cell death. We hypothesized that suppression of excess ROS in osteoblasts and osteoclasts will improve bone microarchitecture. To test our hypothesis, we used irradiated transgenic mCAT mice overexpressing human anti-oxidant catalase gene targeted to the mitochondria (main site for ROS production). mCAT mice expressed the transgene and displayed elevated catalase activity in bone and ex vivo osteoblast and osteoclast cultures. Treated bone from wildtype mice showed elevated levels of oxidative damage whereas mCAT mice did not. Also, increased catalase activity correlated with decreased MDA levels and that increased oxidative damage correlated with decreased % bone volume. Ex-vivo osteoblast colony growth positively correlated with osteoblast catalase activity. mCAT mice displayed reduced % bone volume. Treatment caused significant bone loss in wildtype mice. Treatment also caused slight deficits in microarchitecture of mCAT mice. In conclusion, ROS signaling in both osteoblast and osteoclast lineage cells contribute to skeletal development and remodeling and quenching oxidative damage could play a role in bone loss prevention.

bone loss↗
NASA NTRS2001

Radiation Effects on DC-DC Converters

In this work, several DC-DC converters were designed and built. The converters are Buck Buck-Boost, Cuk, Flyback, and full-bridge zero-voltage switched. The total ionizing dose radiation and single event effects on the converters were investigated. The experimental results for the TID effects tests show that the voltages of the Buck Buck-Boost, Cuk, and Flyback converters increase as total dose increased when using power MOSFET IRF250 as a switching transistor. The change in output voltage with total dose is highest for the Buck converter and the lowest for Flyback converter. The trend of increase in output voltages with total dose in the present work agrees with those of the literature. The trends of the experimental results also agree with those obtained from PSPICE simulation. For the full-bridge zero-voltage switch converter, it was observed that the dc-dc converter with IRF250 power MOSFET did not show a significant change of output voltage with total dose. In addition, for the dc-dc converter with FSF254R4 radiation-hardened power MOSFET, the output voltage did not change significantly with total dose. The experimental results were confirmed by PSPICE simulation that showed that FB-ZVS converter with IRF250 power MOSFET's was not affected with the increase in total ionizing dose. Single Event Effects (SEE) radiation tests were performed on FB-ZVS converters. It was observed that the FB-ZVS converter with the IRF250 power MOSFET, when the device was irradiated with Krypton ion with ion-energy of 150 MeV and LET of 41.3 MeV-square cm/mg, the output voltage increased with the increase in fluence. However, for Krypton with ion-energy of 600 MeV and LET of 33.65 MeV-square cm/mg, and two out of four transistors of the converter were permanently damaged. The dc-dc converter with FSF254R4 radiation hardened power MOSFET's did not show significant change at the output voltage with fluence while being irradiated by Krypton with ion energy of 1.20 GeV and LET of 25.97 MeV-square cm/mg. This might be due to fact that the device is radiation hardened.

Zhang, De-Xin↗
NASA NTRS1972

Ultraviolet radiation effects on the infrared damage rate of a thermal control coating

The effects of ultraviolet radiation on the infrared reflectance of ZnO silicone white thermal coatings were investigated. Narrow band ultraviolet radiation for wavelengths in the 2200A to 3500A range by a monochromator and a high pressure, 150-W Eimac xenon lamp. The sample was irradiated while in a vacuum of at least 0.000001 torr, and infrared reflectance was measured in situ with a spectroreflectometer at 19,500A. Reflectance degradation was studied as a function of wavelength, time, intensity, and dose. Damage was wavelength dependent at constant exposure, but no maximum was evident above the shortest wavelength investigated here. The degradation rate at constant intensity was an exponential function of time and varies with intensity.

Bass, J. A.↗
NASA NTRS1982

Radiation damage

The radiation damage workshop considered a variety of topics among which were the need for equivalent electron fluences in gallium arsenide, the possibility of 15 percent end-of-life efficiencies for silicon, increasing radiation resistance in gallium arsenide, annealing of radiation damage and the need for radiation damage studies in cascade cells. The workshop members agreed that a high priority should be assigned to obtaining equivalent electron fluences for gallium arsenide cells. It was suggested that 1 MeV would be a reasonable electron energy for this purpose. Special care should be given to proton irradiations particularly for energies below 1 MeV. In addition, omnidirectional rather than normal incidence protons should be used. It was also agreed that there was a need for obtaining damage coefficients in gallium arsenide. In silicon, there is a requirement for additional flight data, especially in proton dominated orbits. These data are needed to further check the accuracy of the 1 MeV equivalence fluences.

Weinberg, I.↗
DOE OSTI2022

Multiparameter laser performance characterization of liquid crystals for polarization control devices in the nanosecond regime

Abstract Interactions of liquid crystals (LC’s) with polarized light have been studied widely and have spawned numerous device applications, including the fabrication of optical elements for high-power and large-aperture laser systems. Currently, little is known about both the effect of incident polarization state on laser-induced–damage threshold (LIDT) and laser-induced functional threshold (LIFT) behavior at sub-LIDT fluences under multipulse irradiation conditions. This work reports on the first study of the nanosecond-pulsed LIDT’s dependence on incident polarization for several optical devices employing oriented nematic and chiral-nematic LC’s oriented by surface alignment layers. Accelerated lifetime testing was also performed to characterize the ability of these devices to maintain their functional performance under multipulse irradiation as a function of the laser fluence at both 1053 nm and 351 nm. Results show that the LIDT varies as a function of input polarization by 30–80% within the same device, while the multipulse LIFT (which can differ from the nominal LIDT) depends on irradiation conditions such as laser fluence and wavelength.

47 OTHER INSTRUMENTATION↗
DOE OSTI2024

Comprehensive new insights on the potential use of SiC as plasma-facing materials in future fusion reactors

Abstract The performance of silicon carbide as an alternative plasma facing material (PFM) was studied at various irradiation conditions relevant to ion energies and fluxes of a fusion reactor. This analysis involves detailed modeling of subsurface plasma/material interactions, sputtered particle transport above the surface and redeposition, and related changes in material composition and microstructure induced by steady-state and Edge Localized Mode ion fluxes. Transition of a crystalline SiC surface to semi-crystalline and amorphous phases was analyzed based on advanced modeling of DIII-D tokamak experiments where SiC was irradiated in single- and multiple- L-mode and H-mode discharges. This analysis shows that displacement damage, particle deposition/redeposition, and D accumulation on the SiC divertor surface can lead to significant microstructural changes that result in enhanced sputtering erosion in comparison with the original crystalline material. However, the resulting total net erosion rate for a full-coverage, advanced tokamak, SiC coated divertor may well be acceptably low. Moreover, the C sputtering yield from the evolved SiC surface can be seven times lower than from a pure graphite surface; this would imply significantly reduced tritium co-deposition rates in a D-T tokamak reactor, compared with a pure carbon surface. It was also determined that chemical sputtering of both C and Si should not result in any noticeable effect on the net erosion, for attached plasma regimes. Our results thus show encouraging results overall for use of SiC as a PFM in tokamaks.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗