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At least 775 records · Page 43
All sourcesNASA NTRSDOE OSTI
DOE OSTI2017

Butyl paraben and propyl paraben modulate bisphenol A and estradiol concentrations in female and male mice

People are routinely exposed to the antimicrobial preservatives butyl paraben (BP) and propyl paraben (PP), as well as the monomer of polycarbonate plastics, bisphenol A (BPA). These chemicals are reliably detected in human urine and potentially interact. We investigated whether BP or PP exposure can modulate the concentrations of {sup 14}C-BPA and 17β-estradiol (E{sub 2}). Female and male CF1 mice were each given a subcutaneous injection of oil containing 0 (vehicle), 1, 3, or 9 mg BP or PP, then given a dietary supplement containing 50 μg/kg {sup 14}C-BPA. Radioactivity was measured in tissues through liquid scintillation counting. Significantly elevated {sup 14}C-BPA concentrations were observed following BP treatment in blood serum of both sexes, as well as the lungs, uterus, and ovaries of females and the testes and epididymides of males. Treatment with PP significantly elevated {sup 14}C-BPA concentrations in the uterus only. In another experiment, female and male CF1 mice were each injected with vehicle, 3 mg BP, or 3 mg PP, and E{sub 2} was measured in urine 2–12 h later. Whereas PP did not affect E{sub 2}, BP significantly elevated E{sub 2} 6–10 h after injection in females and 8 h after injection in males. These data indicate that BP and PP can alter the pharmacokinetics of BPA in vivo, and that BP can modulate E{sub 2} concentrations. These results are consistent with evidence that parabens inhibit enzymes that are critical for BPA and E{sub 2} metabolism, and demonstrate the importance of considering concurrent exposure to multiple chemicals when determining regulatory exposure limits. - Highlights: • We studied whether paraben exposure affects the distribution of oral {sup 14}C-BPA. • Elevated {sup 14}C–BPA was observed in mice given butyl or propyl paraben. • We also studied whether paraben exposure affects natural E{sub 2} levels in urine. • Elevated E{sub 2} was observed in mice given butyl, but not propyl, paraben. • Parabens may compete for enzymes that are critical for BPA and E{sub 2} metabolism.

60 APPLIED LIFE SCIENCES↗
DOE OSTI2011

Impact of new particle formation on the concentrations of aerosol number and cloud condensation nuclei around Beijing

New particle formation (NPF) is one of the most important processes in controlling the concentrations of aerosol number (condensation nuclei, CN) and cloud condensation nuclei (CCN) in the atmosphere. In this study, we introduced a new aerosol model representation with 20 size bins between 1 nm and 10 {mu}m and activation-type and kinetic nucleation parameterizations into the WRF-chem model (called NPF-explicit WRF-chem). Model calculations were conducted in the Beijing region in China for the periods during the CARE-Beijing 2006 campaign conducted in August and September 2006. Model calculations successfully reproduced the timing of NPF and no-NPF days in the measurements (21 of 26 days). Model calculations also reproduced the subsequent rapid growth of new particles with a time scale of half a day. These results suggest that once a reasonable nucleation rate at a diameter of 1 nm is given, explicit calculations of condensation and coagulation processes can reproduce the clear contrast between NPF and no-NPF days as well as further growth up to several tens nanometers. With this reasonable representation of the NPF process, we show that NPF contributed 20-30% of CN concentrations (> 10 nm in diameter) in and around Beijing on average. We also show that NPF increases CCN concentrations at higher supersaturations (S > 0.2%), while it decreases them at lower supersaturations (S < 0.1%). This is likely because NPF suppresses the increases in both the size and hygroscopicity of pre-existing particles through the competition of condensable gases between new particles and pre-existing particles. Sensitivity calculations show that a reduction of primary aerosol emissions, such as black carbon (BC), would not necessarily decrease CCN concentrations because of an increase in NPF. Sensitivity calculations also suggest that the reduction ratio of primary aerosol and SO2 emissions will be key in enhancing or damping the BC mitigation effect.

58 GEOSCIENCES↗
DOE OSTI2011

Model Investigation of Temperature and Concentration Dependent Luminescence of Erbium-doped Tellurite Glasses

Improving the up-conversion efficiency is the key issue in tellurite glasses. The quantum efficiency, radiative transition rate and lifetimes of excited states are greatly influenced by the optical properties of the host material, ligand field, multiphonon relaxation processes, impurities, temperature and concentration of erbium ions. We develop a comprehensive 4-level model to examine the radiative and nonradiative (NR) decay processes for the green ({sup 4}S{sub 3/2}{yields}{sup 4}I{sub 15/2}) and red ({sup 4}F{sub 9/2}{yields}{sup 4}I{sub 15/2}) emission over a temperature range of (10-340 K) and concentration range of (0.1-4.5 mol.%). Concentration dependent enhancement and thermal quenching of efficiency for up-conversion is investigated using the derived rate equations. These features are attributed to the NR energy transfer processes, trapped impurity effects, and thermal assisted hopping. The unusual nature of temperature and concentration dependent quenching effects for green and red emission is queries for further investigations. It is further suggested that to achieve higher infrared to visible up-converted efficiency in tellurite glasses the NR channels for energy and charge transfer by phonon and impurity mediated process has to be minimized. Our results on pump power dependent emission intensity, quantum efficiency, luminescence intensity, radiative lifetimes, and transition probabilities are in conformity with other experimental findings.

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2014

Thermodiffusion in concentrated ferrofluids: Experimental and numerical results on magnetic thermodiffusion

Ferrofluids consist of magnetic nanoparticles dispersed in a carrier liquid. Their strong thermodiffusive behaviour, characterised by the Soret coefficient, coupled with the dependency of the fluid's parameters on magnetic fields is dealt with in this work. It is known from former experimental investigations on the one hand that the Soret coefficient itself is magnetic field dependent and on the other hand that the accuracy of the coefficient's experimental determination highly depends on the volume concentration of the fluid. The thermally driven separation of particles and carrier liquid is carried out with a concentrated ferrofluid (φ = 0.087) in a horizontal thermodiffusion cell and is compared to equally detected former measurement data. The temperature gradient (1 K/mm) is applied perpendicular to the separation layer. The magnetic field is either applied parallel or perpendicular to the temperature difference. For three different magnetic field strengths (40 kA/m, 100 kA/m, 320 kA/m) the diffusive separation is detected. It reveals a sign change of the Soret coefficient with rising field strength for both field directions which stands for a change in the direction of motion of the particles. This behaviour contradicts former experimental results with a dilute magnetic fluid, in which a change in the coefficient's sign could only be detected for the parallel setup. An anisotropic behaviour in the current data is measured referring to the intensity of the separation being more intense in the perpendicular position of the magnetic field: S{sub T‖} = −0.152 K{sup −1} and S{sub T⊥} = −0.257 K{sup −1} at H = 320 kA/m. The ferrofluiddynamics-theory (FFD-theory) describes the thermodiffusive processes thermodynamically and a numerical simulation of the fluid's separation depending on the two transport parameters ξ{sub ‖} and ξ{sub ⊥} used within the FFD-theory can be implemented. In the case of a parallel aligned magnetic field, the parameter can be determined to ξ{sub ‖} = (2.8; 9.1; 11.2) × 10{sup −11} · D{sub ‖} kg/(A{sup 2}m) for the different field strengths and in dependence on the magnetic diffusion coefficient D{sub ‖}. An adequate fit in the perpendicular case is not possible, by ξ{sub ⊥} = 1 × 10{sup −17} kg/(Am{sup 2}) a rather good agreement between numerical and experimental data can be found for a field strength of 40 kA/m, a change in the coefficient's sign in the perpendicular setup is not numerically determinable via this theory. The FFD-theory is only partly applicable to calculate the concentration profile in concentrated magnetic fluids established due to a temperature gradient and magnetic field applied.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

Effect of boron concentration on recombination at the p-Si–Al{sub 2}O{sub 3} interface

We examine the surface passivation properties of Al{sub 2}O{sub 3} deposited on boron-doped planar 〈100〉 crystalline silicon surfaces as a function of the boron concentration. Both uniformly doped and diffused surfaces are studied, with surface boron concentrations ranging from 9.2 × 10{sup 15} to 5.2 × 10{sup 19} cm{sup −3}. Atmospheric pressure chemical vapor deposition and thermal atomic layer deposition are used to deposit the Al{sub 2}O{sub 3} films. The surface recombination rate of each sample is determined from photoconductance measurements together with the measured dopant profiles via numerical simulation, using the latest physical models. These values are compared with calculations based on the interface properties determined from capacitance–voltage and conductance measurements. It is found that the fundamental surface recombination velocity of electrons, S{sub n0}, which describes the chemical passivation of the interface, is independent of the surface boron concentration N{sub s} for N{sub s} ≤ 3 × 10{sup 19} cm{sup −3}, and in excellent agreement with values calculated from the interface state density D{sub it} and capture coefficients c{sub n} and c{sub p} measured on undiffused boron-doped surfaces. We conclude that the physical properties of the Si–Al{sub 2}O{sub 3} interface are independent of the boron dopant concentration over this range.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

The roles of non-extensivity and dust concentration as bifurcation parameters in dust-ion acoustic traveling waves in magnetized dusty plasma

Dust ion-acoustic traveling waves are studied in a magnetized dusty plasma in presence of static dust and non-extensive distributed electrons in the framework of Zakharov-Kuznesstov-Burgers (ZKB) equation. System of coupled nonlinear ordinary differential equations is derived from ZKB equation, and equilibrium points are obtained. Nonlinear wave phenomena are studied numerically using fourth order Runge-Kutta method. The change from unstable to stable solution and consequently to asymptotic stable of dust ion acoustic traveling waves is studied through dynamical system approach. It is found that some dramatical features emerge when the non-extensive parameter and the dust concentration parameters are varied. Behavior of the solution of the system changes from unstable to stable and stable to asymptotic stable depending on the value of the non-extensive parameter. It is also observed that when the dust concentration is increased the solution pattern is changed from oscillatory shocks to periodic solution. Thus, non-extensive and dust concentration parameters play crucial roles in determining the nature of the stability behavior of the system. Thus, the non-extensive parameter and the dust concentration parameters can be treated as bifurcation parameters.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2015

Hole traps associated with high-concentration residual carriers in p-type GaAsN grown by chemical beam epitaxy

The hole traps associated with high background doping in p-type GaAsN grown by chemical beam epitaxy are studied based on the changes of carrier concentration, junction capacitance, and hole traps properties due to the annealing. The carrier concentration was increased dramatically with annealing time, based on capacitance–voltage (C–V) measurement. In addition, the temperature dependence of the junction capacitance (C–T) was increased rapidly two times. Such behavior is explained by the thermal ionization of two acceptor states. These acceptors are the main cause of high background doping in the film, since the estimated carrier concentration from C–T results explains the measured carrier concentration at room temperature using C–V method. The acceptor states became shallower after annealing, and hence their structures are thermally unstable. Deep level transient spectroscopy (DLTS) showed that the HC2 hole trap was composed of two signals, labeled HC21 and HC22. These defects correspond to the acceptor levels, as their energy levels obtained from DLTS are similar to those deduced from C–T. The capture cross sections of HC21 and HC22 are larger than those of single acceptors. In addition, their energy levels and capture cross sections change in the same way due to the annealing. This tendency suggests that HC21 and HC22 signals originate from the same defect which acts as a double acceptor.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Probing the carrier concentration profiles in phosphorus-implanted germanium using infrared spectroscopic ellipsometry

Spectroscopic ellipsometry with photon energy in the 0.045–0.65 eV range was used to investigate germanium samples implanted with 30 keV phosphorus ions and annealed at 700 °C. The infrared response of implanted layers is dominated by free carrier absorption which is modeled using a Drude oscillator. The carrier concentration profiles were modeled using an error function, and compared with those obtained by electrochemical capacitance-voltage profiling and secondary ion mass spectrometry. In the flat region of the carrier concentration profile, average carrier concentration and mobility of 1.40 × 10{sup 19} cm{sup −3} and 336 cm{sup 2}V{sup −1}s{sup −1}, respectively, were obtained. A phosphorus diffusivity of ∼1.2 × 10{sup −13} cm{sup 2}/s was obtained. The mobility versus carrier concentration relationships obtained for the implanted samples are close to the empirical relationship for bulk Ge.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Influence of precursor concentration on the properties of spray deposited CdO thin films

Cadmium oxide (CdO) thin films of thickness 50 to 200 nm were deposited on glass substrates maintained at 400°C using spray pyrolysis technique. CdO thin films were deposited by varying the molar concentrations of cadmium acetate solution such as 0.01, 0.05, 0.1, 0.15 and 0.2 M. X-ray diffraction studies reveal that the films are polycrystalline in nature with cubic structure. SEM images show that the films have well defined spherical grains and grain boundaries are seen. Optical studies reveal that the films prepared from solution of 0.01 and 0.1M concentration have high transparency than films prepared at other solution concentration. The optical energy band gap value decreases from 2.50 to 2.37eV with the increase in molar concentration. Electrical studies revealed that the CdO thin film prepared using 0.1M solution possesses lowest resistivity.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Concentration-dependent self-diffusion coefficients in amorphous Si{sub 1−x}Ge{sub x} solid solutions: An interdiffusion study

Self-diffusion coefficients of Si and Ge in amorphous Si{sub 1−x}Ge{sub x} (a-Si{sub 1−x}Ge{sub x}) solid solutions were determined quantitatively in the temperature range of 440 °C – 460 °C by the investigation of interdiffusion in amorphous Si/Si{sub 0.52}Ge{sub 0.48} multilayers using Auger electron spectroscopy sputter-depth profiling. The determined concentration dependent self-diffusion coefficients of Si and Ge in a-Si{sub 1−x}Ge{sub x} with 0 ≤ x ≤ 0.48 at. % Ge are about ten orders of magnitude larger than in the corresponding crystalline phases, due to the inherent, excess free volume in the amorphous phase. The self-diffusion coefficient of Si (or Ge) in a-Si{sub 1−x}Ge{sub x} increases in association with a decreasing activation enthalpy with increasing Ge concentration. This concentration dependence has been related to an overall decrease of the average bond strength with increasing Ge concentration.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Characterization of the magnetic moment distribution in low-concentration solutions of iron oxide nanoparticles by a high-T{sub c} superconducting quantum interference device magnetometer

We developed a highly sensitive AC/DC magnetometer using a high-temperature superconductor superconducting quantum interference device for the evaluation of magnetic nanoparticles in solutions. Using the developed system, we investigated the distribution of magnetic moments of iron oxide multi-core particles of 100 nm at various iron concentrations that are lower than 96 μg/ml by analyzing the measured magnetization curves. Singular value decomposition and non-regularized non-negative least-squares methods were used during the reconstruction of the distribution. Similar distributions were obtained for all concentrations, and the iron concentration could be determined from the measured magnetization curves. The measured harmonics upon the excitation of AC and DC magnetic fields curves agreed well with the harmonics simulated based on the reconstructed magnetization curves, implying that the magnetization curves of magnetic nanoparticles were successfully obtained as we will show in the article. We compared the magnetization curves between multi-core particles of 100 nm and 130 nm, composed of 12-nm iron oxide nanoparticles. A distinctive magnetic property between the 100 nm and 130 nm particles in low-concentration solutions was successfully characterized. The distribution characteristic of magnetic moments suggests that the net magnetic moment in a multi-core particle is affected by the size of the magnetic cores and their degree of aggregation. Exploration of magnetic properties with high sensitivity can be expected using the developed system.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Capacitance behavior of InAlN Schottky diodes in presence of large concentrations of shallow and deep states related to oxygen

The capacitance-voltage-temperature characteristics of nonintentionally doped In{sub 0.16}Al{sub 0.84 }N/n{sup +}-GaN Schottky diodes were measured at 1 MHz and in the 90–400 K range. They are discussed in the framework of existing theories, which properly treat the Poisson's equation, especially near the edge of the space-charge region, the so-called transition region. The concentration of a shallow donor and of a deep DX-like center, previously reported, is properly determined. The key parameter to discuss the temperature dependence of the capacitance is the ratio between the frequency of the small ac modulating signal and the temperature-dependent emission rate associated to each level. The capacitance-voltage C-V{sub a} curves were successfully fitted using a three parameters expression over the full range of temperatures. The concentration of both shallow and deep levels exceeds a few 10{sup 18} cm{sup −3}. Based on secondary ion mass spectrometry profiling, we assign both levels to the dominant oxygen impurity. This result supports our previous assignment of the shallow donor to a substitutional oxygen atom on a nitrogen site and the deep state to an O-related DX center, naturally explaining its high concentration. The sluggish kinetics at low temperatures, associated to the large concentration of deep levels located near the transition region, is illustrated by hysteresis loops in the C-V{sub a} curves below 270 K. Furthermore, the contribution of free carriers to the capacitance is revealed below 150 K, when both shallow and deep donors cannot respond anymore due to an emission rate lower than the 1 MHz modulating frequency. Finally, the presence of a highly doped thin surface barrier, as already reported in other III-nitrides, finds further support.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Communication: Modeling of concentration dependent water diffusivity in ionic solutions: Role of intermolecular charge transfer

The translational diffusivity of water in solutions of alkali halide salts depends on the identity of ions, exhibiting dramatically different behavior even in solutions of similar salts of NaCl and KCl. The water diffusion coefficient decreases as the salt concentration increases in NaCl. Yet, in KCl solution, it slightly increases and remains above bulk value as salt concentration increases. Previous classical molecular dynamics simulations have failed to describe this important behavior even when polarizable models were used. Here, we show that inclusion of dynamical charge transfer among water molecules produces results in a quantitative agreement with experiments. Our results indicate that the concentration-dependent diffusivity reflects the importance of many-body effects among the water molecules in aqueous ionic solutions. Comparison with quantum mechanical calculations shows that a heterogeneous and extended distribution of charges on water molecules around the ions due to ion-water and also water-water charge transfer plays a very important role in controlling water diffusivity. Explicit inclusion of the charge transfer allows us to model accurately the difference in the concentration-dependent water diffusivity between Na{sup +} and K{sup +} ions in simulations, and it is likely to impact modeling of a wide range of systems for medical and technological applications.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2016

Microscopic potential fluctuations in Si-doped AlGaN epitaxial layers with various AlN molar fractions and Si concentrations

Nanoscopic potential fluctuations of Si-doped AlGaN epitaxial layers with the AlN molar fraction varying from 0.42 to 0.95 and Si-doped Al{sub 0.61}Ga{sub 0.39}N epitaxial layers with Si concentrations of 3.0–37 × 10{sup 17 }cm{sup −3} were investigated by cathodoluminescence (CL) imaging combined with scanning electron microscopy. The spot CL linewidths of AlGaN epitaxial layers broadened as the AlN molar fraction was increased to 0.7, and then narrowed at higher AlN molar fractions. The experimental linewidths were compared with the theoretical prediction from the alloy broadening model. The trends displayed by our spot CL linewidths were consistent with calculated results at AlN molar fractions of less than about 0.60, but the spot CL linewidths were markedly broader than the calculated linewidths at higher AlN molar fractions. The dependence of the difference between the spot CL linewidth and calculated line broadening on AlN molar fraction was found to be similar to the dependence of reported S values, indicating that the vacancy clusters acted as the origin of additional line broadening at high AlN molar fractions. The spot CL linewidths of Al{sub 0.61}Ga{sub 0.39}N epitaxial layers with the same Al concentration and different Si concentrations were nearly constant in the entire Si concentration range tested. From the comparison of reported S values, the increase of V{sub Al} did not contribute to the linewidth broadening, unlike the case of the V{sub Al} clusters.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Impact of radon gas concentration in the aerosoles profile

Radon gases relased from building materials and from earth surface are the major responsibility of air ionization. Radon nuclear decay can produce an alpha particle with high energy and Radon progeny. This particle and gamma rays can deliver particles in the air and produce ions with different polarities. This ions, because of induced electric charge, can attach with air aerosols and charge them with their electric charge. The charged aerosols can interact with the other aerosols and ions. Because of this exchange, the air conductivity and the aerosol profiles will change dependently by Radon gas concentration and gamma radiation. Observations show an increase in concentration of Radon during the night, and a decrease during the daylight time. The Radon gas concentration changed hour by hour can induce aerosol profile to change. This dependency between the aerosol profiles and the Radon gas concentrations is discussed.

54 ENVIRONMENTAL SCIENCES↗
DOE OSTI2016

Influence of dopant concentration on the electrical properties of the CdSe-PMMA nanocomposite

This paper reports the synthesis and electrical characterization of CdSe-PMMA nanocomposite. CdSe-PMMA nanocomposite has been prepared by ex-situ technique through chemical route. The influence of three different Ag doping concentrations on the electrical properties has been studied in the temperature range ∼ 303-353 K. Transmission electron micrograph reveals the spherical morphology of the CdSe nanoparticles and their proper dispersion in the PMMA matrix. The electrical conduction of the polymer nanocomposites is through thermally activated process with single activation energy. With Ag doping, initially the activation energy increases upto 0.2 % Ag doping concentration but with further increase in Ag concentration, it decreases. This behavior has been discussed on the basis of randomly oriented grain boundaries and defect states. Thus, the results indicate that the transport properties of the polymer nanocomposites can be tailored by controlled doping concentration.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2016

The initial magnetic susceptibility of polydisperse ferrofluids: A comparison between experiment and theory over a wide range of concentration

Temperature dependencies of the static initial magnetic susceptibility for ferrofluids at various concentrations are studied using experiment and statistical-mechanical theories. Magnetic susceptibility measurements are carried out for twelve samples of magnetite-based fluids stabilized with oleic acid over a wide range of temperatures (210 K ≲T ≲ 390 K); all samples have the same granulometric composition but different volume ferroparticle concentrations (0.2 ≲ φ ≲ 0.5). Experimental results are analyzed using three theories: the second-order modified mean-field theory (MMF2) [A. O. Ivanov and O. B. Kuznetsova, Phys. Rev. E 64, 41405 (2001)]; its correction for polydisperse ferrofluids arising from Mayer-type cluster expansion and taking into account the first terms of the polydisperse second virial coefficient [A. O. Ivanov and E. A. Elfimova, J. Magn. Magn. Mater 374, 327 (2015)]; and a new theory based on MMF2 combined with the first terms of the polydisperse second and third virial contributions to susceptibility. It turns out that the applicability of each theory depends on the experimental sample density. If twelve ferrofluid samples are split into three groups of strong, moderate, and low concentrated fluids, the temperature dependences of the initial magnetic susceptibility in each group are very precisely described by one of the three theories mentioned above. The determination of a universal formula predicting a ferrofluid susceptibility over a broad range of concentrations and temperatures remains as a challenge.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2016

Concentration of point defects in 4H-SiC characterized by a magnetic measurement

A magnetic method is presented to characterize the concentration of point defects in silicon carbide. In this method, the concentration of common charged point defects, which is related to the density of paramagnetic centers, is determined by fitting the paramagnetic component of the specimen to the Brillouin function. Several parameters in the Brillouin function can be measured such as: the g-factor can be obtained from electron spin resonance spectroscopy, and the magnetic moment of paramagnetic centers can be obtained from positron lifetime spectroscopy combined with a first-principles calculation. To evaluate the characterization method, silicon carbide specimens with different concentrations of point defects are prepared with aluminum ion implantation. The fitting results of the densities of paramagnetic centers for the implanted doses of 1 × 10{sup 14} cm{sup −2}, 1 × 10{sup 15} cm{sup −2} and 1 × 10{sup 16} cm{sup −2} are 6.52 × 10{sup 14}/g, 1.14 × 10{sup 15}/g and 9.45 × 10{sup 14}/g, respectively. The same trends are also observed for the S-parameters in the Doppler broadening spectra. It is shown that this method is an accurate and convenient way to obtain the concentration of point defects in 4H-SiC.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗