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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 775 records · Page 43
All sourcesNASA NTRSDOE OSTI
DOE OSTI2014

Bias-field controlled phasing and power combination of gyromagnetic nonlinear transmission lines

Gyromagnetic Nonlinear Transmission Lines (NLTLs) generate microwaves through the damped gyromagnetic precession of the magnetic moments in ferrimagnetic material, and are thus utilized as compact, solid-state, frequency agile, high power microwave (HPM) sources. The output frequency of a NLTL can be adjusted by control of the externally applied bias field and incident voltage pulse without physical alteration to the structure of the device. This property provides a frequency tuning capability not seen in many conventional e-beam based HPM sources. The NLTLs developed and tested are mesoband sources capable of generating MW power levels in the L, S, and C bands of the microwave spectrum. For an individual NLTL the output power at a given frequency is determined by several factors including the intrinsic properties of the ferrimagnetic material and the transmission line structure. Hence, if higher power levels are to be achieved, it is necessary to combine the outputs of multiple NLTLs. This can be accomplished in free space using antennas or in a transmission line via a power combiner. Using a bias-field controlled delay, a transient, high voltage, coaxial, three port, power combiner was designed and tested. Experimental results are compared with the results of a transient COMSOL simulation to evaluate combiner performance.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2014

Photo-carrier control of exchange bias in BiFeO{sub 3}/La{sub 2/3}Sr{sub 1/3}MnO{sub 3} thin films

We report the facile control of exchange bias in BiFeO{sub 3}/La{sub 2/3}Sr{sub 1/3}MnO{sub 3} (BFO/LSMO) thin films on an SrTiO{sub 3} (STO) substrate using light irradiation. Illumination with weak red light (λ: 630 nm, intensity: ∼1 mW/cm{sup 2}) reduced the exchange bias field (H{sub E}) of BFO/LSMO from +30 Oe in the dark to −2 Oe with red light. In accompanying the decrease of H{sub E}, the resistance of BFO/LSMO significantly increased. These results were attributed to the reduction in the hole-doping ratio of LSMO and the weakened exchange coupling between Fe and Mn spins at the interface, resulting from photo-injected electrons from the STO substrate. Successive turning on/off of red light gives rise to cyclical change of corresponding H{sub E}, which should be useful for applications like photo-controlled tunneling magnetoresistance devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Bias dependence and correlation of the cathodoluminescence and electron beam induced current from an InGaN/GaN light emitting diode

Micron-scale mapping has been employed to study a contacted InGaN/GaN LED using combined electroluminescence (EL), cathodoluminescence (CL), and electron beam induced current (EBIC). Correlations between parameters, such as the EBIC and CL intensity, were studied as a function of applied bias. The CL and EBIC maps reveal small areas, 2–10 μm in size, which have increased nonradiative recombination rate and/or a lower conductivity. The CL emission from these spots is blue shifted, by 30–40 meV. Increasing the reverse bias causes the size of the spots to decrease, due to competition between in-plane diffusion and drift in the growth direction. EL mapping shows large bright areas (∼100 μm) which also have increased EBIC, indicating domains of increased conductivity in the p and/or n-GaN.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Microscopic model for exchange bias from grain-boundary disorder in a ferromagnet/antiferromagnet thin film with a nanocrystalline microstructure

Monte Carlo spin simulations were coupled to a Voronoi microstructure-generator to predict the magnitude and behavior of exchange bias in a ferromagnet/antiferromagnet (AF) thin film bilayer with a nanocrystalline microstructure. Our model accounts for the effects of irregular grain-shapes, finite-sized particles, and the possible presence of local random-fields originating from the antiferromagnet's grain-boundary regions. As the grain-boundary represents a crystal-structure distortion, we model the local effect on the exchange constants in the Gaussian approximation which can cause regions resembling a spin glass confined to an unusual 2D topology. Although an ensemble of completely disconnected AF grains isolated by non-magnetic barriers provides a small exchange bias, the introduction of a spin-glass network at the boundaries causes a four-fold enhancement in the magnitude of the loop-shift. This implies the importance of local grain-boundary behavior in defect-engineered antiferromagnets.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Sequential injection of domain walls into ferroelectrics at different bias voltages: Paving the way for “domain wall memristors”

Simple meso-scale capacitor structures have been made by incorporating thin (∼300 nm) single crystal lamellae of KTiOPO{sub 4} (KTP) between two coplanar Pt electrodes. The influence that either patterned protrusions in the electrodes or focused ion beam milled holes in the KTP have on the nucleation of reverse domains during switching was mapped using piezoresponse force microscopy imaging. The objective was to assess whether or not variations in the magnitude of field enhancement at localised “hot-spots,” caused by such patterning, could be used to both control the exact locations and bias voltages at which nucleation events occurred. It was found that both the patterning of electrodes and the milling of various hole geometries into the KTP could allow controlled sequential injection of domain wall pairs at different bias voltages; this capability could have implications for the design and operation of domain wall electronic devices, such as memristors, in the future.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

Electrical, optical, and material characterizations of blue InGaN light emitting diodes submitted to reverse-bias stress in water vapor condition

In this paper, we investigate degradation of InGaN/GaN light emitting diodes (LEDs) under reverse-bias operations in water vapor and dry air. To examine failure origins, electrical characterizations including current-voltage, breakdown current profiles, optical measurement, and multiple material analyses were performed. Our findings indicate that the diffusion of indium atoms in water vapor can expedite degradation. Investigation of reverse-bias stress can help provide insight into the effects of water vapor on LEDs.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

Tuning exchange bias by Co doping in Mn₅₀Ni{sub 41–x}Sn₉Co{sub x} melt-spun ribbons

In Mn₅₀Ni{sub 41–x}Sn₉Co{sub x} ribbons, the exchange bias field is very sensitive to the Co content. Based on both theoretical and experimental studies, it has been found that with increasing Co content, the pinned phase (ferromagnetic phase) remains almost unchanged while the pinning phase is changed from a canonical spin glass to a cluster spin glass and finally to a ferromagnetic phase. Changing the Co content in Mn₅₀Ni{sub 41–x}Sn₉Co{sub x} alloys has been proven to be an effective way of tuning the magnetic anisotropy and the phase structure of the pinning phase. With different Co contents, a continuous tuning of the exchange bias field from 345 Oe to 3154 Oe is realized.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Amorphous FeCoSiB for exchange bias coupled and decoupled magnetoelectric multilayer systems: Real-structure and magnetic properties

The effect of field annealing for exchanged biased multilayer films is studied with respect to the resultant structural and magnetic film properties. The presented multilayer stacks comprise repeating sequences of Ta/Cu/(1 1 1) textured antiferromagnetic Mn₇₀Ir₃₀ /amorphous ferromagnetic Fe₇₀.₂Co₇.₈Si₂B₁₀. Within the ferromagnetic layers crystalline filaments are observed. An additional Ta layer between the antiferromagnet and ferromagnet is used in order to investigate and separate the influence of the common Mn₇₀Ir₃₀/Fe₇₀.₂Co₇.₈Si₁₂B₁₀ interface on the occurring filaments and structural changes. In situ and ex situ transmission electron microscopy is used for a comprehensive structure characterization of multilayer stacks for selected temperature stages. Up to 250 °C, the multilayers are structurally unaltered and preserve the as-deposited condition. A deliberate increase to 350 °C exhibits different crystallization processes for the films, depending on the presence of crystal nuclei within the amorphous ferromagnetic layer. The influence of volume-to-surface ratio of the multilayer stacks to the crystallization process is emphasized by the comparison of in situ and ex situ investigations as the respective specimen thickness is changed. Complementary magnetic studies reveal a defined exchange bias obtained at the first annealing step and a decrease of total anisotropy field with partial crystallization after the subsequent annealing at 350 °C.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Radiation and bias switch-induced charge dynamics in Al{sub 2}O{sub 3}-based metal-oxide-semiconductor structures

Charge trapping dynamics induced by exposition to γ-ray ({sup 60}Co) radiation and bias switching in MOS capacitors with atomic layer deposited Al{sub 2}O{sub 3} as insulating layer was studied. Electrical characterization prior to irradiation showed voltage instabilities due to electron tunneling between the substrate and preexisting defects inside the dielectric layer. Real-time capacitance-voltage (C-V) measurements during irradiation showed two distinct regimes: For short times, the response is strongly bias dependent and linear with log(t), consistent with electron trapping/detrapping; for long times, the voltage shift is dominated by the radiation-induced hole capture being always negative and linear with dose. A simple model that takes into account these two phenomena can successfully reproduce the observed results.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Low-bias negative differential resistance effect in armchair graphene nanoribbon junctions

Graphene nanoribbons with armchair edges (AGNRs) have bandgaps that can be flexibly tuned via the ribbon width. A junction made of a narrower AGNR sandwiched between two wider AGNR leads was recently reported to possess two perfect transmission channels close to the Fermi level. Here, we report that by using a bias voltage to drive these transmission channels into the gap of the wider AGNR lead, we can obtain a negative differential resistance (NDR) effect. Owing to the intrinsic properties of the AGNR junctions, the on-set bias reaches as low as ∼0.2 V and the valley current almost vanishes. We further show that such NDR effect is robust against details of the atomic structure of the junction, substrate, and whether the junction is made by etching or by hydrogenation.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Effects of vacuum-ultraviolet irradiation on copper penetration into low-k dielectrics under bias-temperature stress

The effects of vacuum-ultraviolet (VUV) irradiation on copper penetration into non-porous low-k dielectrics under bias-temperature stress (BTS) were investigated. By employing x-ray photoelectron spectroscopy depth-profile measurements on both as-deposited and VUV-irradiated SiCOH/Cu stacks, it was found that under the same BTS conditions, the diffusion depth of Cu into the VUV-irradiated SiCOH is higher than that of as-deposited SiCOH. On the other hand, under the same temperature-annealing stress (TS) without electric bias, the Cu distribution profiles in the VUV-irradiated SiCOH were same with that for the as-deposited SiCOH. The experiments suggest that in as-deposited SiCOH, the diffused Cu exists primarily in the atomic state, while in VUV-irradiated SiCOH, the diffused Cu is oxidized by the hydroxyl ions (OH{sup −}) generated from VUV irradiation and exists in the ionic state. The mechanisms for metal diffusion and ion injection in VUV irradiated low-k dielectrics are discussed.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Current-driven non-linear magnetodynamics in exchange-biased spin valves

This work investigates the excitation of parametric resonance in exchange-biased spin valves (EBSVs). Using a mechanical point contact, high density dc and microwave currents were injected into the EBSV sample. Observing the reflected microwave power and the small rectification voltage that develops across the contact allows detecting the current-driven magnetodynamics not only in the bulk sample but originating exclusively from the small contact region. In addition to ferromagnetic resonance (FMR), parametric resonance at twice the natural FMR frequency was observed. In contrast to FMR, this non-linear resonance was excited only in the vicinity of the point contact where current densities are high. Power-dependent measurements displayed a typical threshold-like behavior of parametric resonance and a broadening of the instability region with increasing power. Parametric resonance showed a linear shift as a function of applied dc bias which is consistent with the field-like spin-transfer torque induced by current on magnetic moments in EBSV.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Ion polarization behavior in alumina under pulsed gate bias stress

Alkali metal ion incorporation in alumina significantly increases alumina capacitance by ion polarization. With high capacitance, ion-incorporated aluminas become promising high dielectric constant (high-k) gate dielectric materials in field-effect transistors (FETs) to enable reduced operating voltage, using oxide or organic semiconductors. Alumina capacitance can be manipulated by incorporation of alkali metal ions, including potassium (K{sup +}), sodium (Na{sup +}), and lithium (Li{sup +}), having different bond strengths with oxygen. To investigate the electrical stability of zinc tin oxide-based transistors using ion incorporated alumina as gate dielectrics, pulsed biases at different duty cycles (20%, 10%, and 2% representing 5 ms, 10 ms, and 50 ms periods, respectively) were applied to the gate electrode, sweeping the gate voltage over series of these cycles. We observed a particular bias stress-induced decrease of saturation field-effect mobility accompanied by threshold voltage shifts (ΔV{sub th}) in potassium and sodium-incorporated alumina (abbreviated as PA and SA)-based FETs at high duty cycle that persisted over multiple gate voltage sweeps, suggesting a possible creation of new defects in the semiconductor. This conclusion is also supported by the greater change in the mobility-capacitance (μC) product than in capacitance itself. Moreover, a more pronounced ΔV{sub th} over shorter times was observed in lithium-incorporated alumina (abbreviated as LA)-based transistors, suggesting trapping of electrons in existing interfacial states. ΔV{sub th} from multiple gate voltage sweeps over time were fit to stretched exponential forms. All three dielectrics show good stability using 50-ms intervals (20-Hz frequencies), corresponding to 2% duty cycles.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Thermodynamics of the polaron master equation at finite bias

We study coherent transport through a double quantum dot. Its two electronic leads induce electronic matter and energy transport and a phonon reservoir contributes further energy exchanges. By treating the system-lead couplings perturbatively, whereas the coupling to vibrations is treated non-perturbatively in a polaron-transformed frame, we derive a thermodynamic consistent low-dimensional master equation. When the number of phonon modes is finite, a Markovian description is only possible when these couple symmetrically to both quantum dots. For a continuum of phonon modes however, also asymmetric couplings can be described with a Markovian master equation. We compute the electronic current and dephasing rate. The electronic current enables transport spectroscopy of the phonon frequency and displays signatures of Franck-Condon blockade. For infinite external bias but finite tunneling bandwidths, we find oscillations in the current as a function of the internal bias due to the electron-phonon coupling. Furthermore, we derive the full fluctuation theorem and show its identity to the entropy production in the system.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Effect of L1{sub 2} ordering in antiferromagnetic Ir-Mn epitaxial layer on exchange bias of FePd films

Two series of samples of single-layer IrMn and IrMn/FePd bilayer films, deposited on a single-crystal MgO substrate at different IrMn deposition temperatures (T{sub s} = 300–700 °C), were investigated using magnetron sputtering. L1{sub 2} ordering was revealed for the 30 nm-thick IrMn epitaxial (001) films with T{sub s} ≥ 400 °C, determined by synchrotron radiation x-ray diffractometry (XRD). XRD results also provide evidence of the epitaxial growth of the IrMn films on MgO substrate. Increasing T{sub s} from 400 to 700 °C monotonically increases the ordering parameter of L1{sub 2} phases from 0.17 to 0.81. An in-plane exchange bias field (H{sub eb}) of 22 Oe is obtained in a 10 nm-thick FePd film that is deposited on the disordered IrMn films. As the L1{sub 2} ordering of the IrMn layers increases, the H{sub eb} gradually decreases to 0 Oe, meaning that the exchange bias behavior vanishes. The increased surface roughness, revealed by atomic force microscopy, of the epitaxial IrMn layers with increasing T{sub s} cannot be the main cause of the decrease in H{sub eb} due to the compensated surface spins regardless of the disordered and ordered (001) IrMn layers. The change of antiferromagnetic structure from the A1 to the L1{sub 2} phase was correlated with the evolution of H{sub eb}.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Plasma acceleration using a radio frequency self-bias effect

In this work plasma acceleration using a RF self-bias effect is experimentally studied. The experiments are conducted using a novel plasma accelerator system, called Neptune, consisting of an inductively coupled plasma source and a RF-biased set of grids. The plasma accelerator can operate in a steady state mode, producing a plasma flow with separately controlled plasma flux and velocity without any magnetic configuration. The operating pressure at the source output is as low as 0.2 mTorr and can further be decreased. The ion and electron flows are investigated by measuring the ion and electron energy distribution functions both space resolved and with different orientations with respect to the flow direction. It is found that the flow of electrons from the source is highly anisotropic and directed along the ion flow and this global flow of accelerated plasma is well localized in the plasma transport chamber. The maximum flux is about 7.5·10{sup 15} ions s{sup −1} m{sup −2} (at standard conditions) on the axis and decreasing to almost zero at a radial distances of more than 15 cm from the flow axis. Varying the RF acceleration voltage in the range 20–350 V, the plasma flow velocity can be changed between 10 and 35 km/s. The system is prospective for different technology such as space propulsion and surface modification and also interesting for fundamental studies for space-related plasma simulations and investigation of the dynamo effect using accelerated rotating plasmas.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2015

Negative bias-and-temperature stress-assisted activation of oxygen-vacancy hole traps in 4H-silicon carbide metal-oxide-semiconductor field-effect transistors

We use hybrid-functional density functional theory-based Charge Transition Levels (CTLs) to study the electrical activity of near-interfacial oxygen vacancies located in the oxide side of 4H-Silicon Carbide (4H-SiC) power Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs). Based on the “amorphousness” of their local atomic environment, oxygen vacancies are shown to introduce their CTLs either within (permanently electrically active) or outside of (electrically inactive) the 4H-SiC bandgap. The “permanently electrically active” centers are likely to cause threshold voltage (V{sub th}) instability at room temperature. On the other hand, we show that the “electrically inactive” defects could be transformed into various “electrically active” configurations under simultaneous application of negative bias and high temperature stresses. Based on this observation, we present a model for plausible oxygen vacancy defects that could be responsible for the recently observed excessive worsening of V{sub th} instability in 4H-SiC power MOSFETs under high temperature-and-gate bias stress. This model could also explain the recent electrically detected magnetic resonance observations in 4H-SiC MOSFETs.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Electron-beam-induced current measurements with applied bias provide insight to locally resolved acceptor concentrations at p-n junctions

Electron-beam-induced current (EBIC) measurements have been employed for the investigation of the local electrical properties existing at various types of electrical junctions during the past decades. In the standard configuration, the device under investigation is analyzed under short-circuit conditions. Further insight into the function of the electrical junction can be obtained when applying a bias voltage. The present work gives insight into how EBIC measurements at applied bias can be conducted at the submicrometer level, at the example of CuInSe{sub 2} solar cells. From the EBIC profiles acquired across ZnO/CdS/CuInSe{sub 2}/Mo stacks exhibiting p-n junctions with different net doping densities in the CuInSe{sub 2} layers, values for the width of the space-charge region, w, were extracted. For all net doping densities, these values decreased with increasing applied voltage. Assuming a linear relationship between w{sup 2} and the applied voltage, the resulting net doping densities agreed well with the ones obtained by means of capacitance-voltage measurements.

36 MATERIALS SCIENCE↗