Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “Vertical”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 775 records · Page 43
All sourcesNASA NTRSDOE OSTI
DOE OSTI2015

Facile construction of vertically aligned EuS-ZnO hybrid core shell nanorod arrays for visible light driven photocatalytic properties

We demonstrated the development of coupled semiconductor in the form of hybrid heterostructures for significant advancement in catalytic functional materials. In this article, we report the preparation of vertically aligned core shell ZnO-EuS nanorod photocatalyst arrays by a simple chemical solution process followed by sulfudation process. The XRD pattern confirmed formation of the hexagonal wurtzite structure of ZnO and cubic nature of the EuS. Cross sectional FESEM images show vertical rod array structure, and the size of the nanorods ranges from 80 to 120 nm. UV-Vis DRS spectra showed that the optical absorption of ZnO was significantly enhanced to the visible region by modification with EuS surfaces. TEM study confirmed that the surface of ZnO was drastically improved by the modification with EuS nanoparticle. The catalytic activity of EuS−ZnO core shell nanorod arrays were evaluated by the photodegradation of Methylene Blue (MB) dye under visible irradiation. The results revealed that the photocatalytic activity of EuS−ZnO was much higher than that of ZnO under natural sunlight. EuS−ZnO was found to be stable and reusable without appreciable loss of catalytic activity up to four consecutive cycles.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Vertical electron transport in van der Waals heterostructures with graphene layers

We propose and analyze an analytical model for the self-consistent description of the vertical electron transport in van der Waals graphene-layer (GL) heterostructures with the GLs separated by the barriers layers. The top and bottom GLs serve as the structure emitter and collector. The vertical electron transport in such structures is associated with the propagation of the electrons thermionically emitted from GLs above the inter-GL barriers. The model under consideration describes the processes of the electron thermionic emission from and the electron capture to GLs. It accounts for the nonuniformity of the self-consistent electric field governed by the Poisson equation which accounts for the variation of the electron population in GLs. The model takes also under consideration the cooling of electrons in the emitter layer due to the Peltier effect. We find the spatial distributions of the electric field and potential with the high-electric-field domain near the emitter GL in the GL heterostructures with different numbers of GLs. Using the obtained spatial distributions of the electric field, we calculate the current-voltage characteristics. We demonstrate that the Peltier cooling of the two-dimensional electron gas in the emitter GL can strongly affect the current-voltage characteristics resulting in their saturation. The obtained results can be important for the optimization of the hot-electron bolometric terahertz detectors and different devices based on GL heterostructures.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Electrokinetics of scalable, electric-field-assisted fabrication of vertically aligned carbon-nanotube/polymer composites

Composite thin films incorporating vertically aligned carbon nanotubes (VACNTs) offer promise for a variety of applications where the vertical alignment of the CNTs is critical to meet performance requirements, e.g., highly permeable membranes, thermal interfaces, dry adhesives, and films with anisotropic electrical conductivity. However, current VACNT fabrication techniques are complex and difficult to scale up. In this paper, we describe a solution-based, electric-field-assisted approach as a costeffective and scalable method to produce large-area VACNT composites. Multiwall-carbon nanotubes are dispersed in a polymeric matrix, aligned with an alternating-current (AC) electric field, and electrophoretically concentrated to one side of the thin film with a direct-current (DC) component to the electric field. This approach enables the fabrication of highly concentrated, individually aligned nanotube composites from suspensions of very dilute (Φ=4×10 –4 ) volume fraction. We experimentally investigate the basic electrokinetics of nanotube alignment under AC electric fields, and show that simple models can adequately predict the rate and degree of nanotube alignment using classical expressions for the induced dipole moment, hydrodynamic drag, and the effects of Brownian motion. The composite AC þ DC field also introduces complex fluid motion associated with AC electro-osmosis and the electrochemistry of the fluid/electrode interface. We experimentally probe the electric-field parameters behind these electrokinetic phenomena, and demonstrate, with suitable choices of processing parameters, the ability to scalably produce large-area composites containing VACNTs at number densities up to 10 10 nanotubes/cm 2 . This VACNT number density exceeds that of previous electric-fieldfabricated composites by an order of magnitude, and the surface-area coverage of the 40nm VACNTs is comparable to that of chemical-vapor-deposition-grown arrays of smaller-diameter nanotubes.

42 ENGINEERING↗
DOE OSTI2015

Schottky-contacted vertically self-aligned ZnO nanorods for hydrogen gas nanosensor applications

Vertically well aligned ZnO nanorods (NRs) were grown on Si(100) substrate using RF magnetron sputtering technique. Scanning electron microscopy images confirms uniform distribution of NRs on 2 in. wafer with average diameter, height and density being ∼75 nm, ∼850 nm, and ∼1.5 × 10{sup 10} cm{sup −2}, respectively. X-ray diffraction reveals that the ZnO NRs are grown along c-axis direction with wurtzite crystal structure. Cathodoluminescence spectroscopy, which shows a single strong peak around 3.24 eV with full width half maxima 130 meV, indicates the high crystalline and optical quality of ZnO and very low defect density. Vertically aligned nanosensors were fabricated by depositing gold circular Schottky contacts on ZnO NRs. Resistance responses of nanosensors were observed in the range from 50 to 150 °C in 1% and 5% hydrogen in argon environment, which is below and above the explosive limit (4%) of hydrogen in air. The nanosensor's sensitivity increases from 11% to 67% with temperature from 50 to 150 °C and also shows fast response time (9–16 s) and moderate recovery time (100–200 s). A sensing mechanism is proposed based on Schottky barrier changes at heterojunctions and change in depletion region of NRs.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Boron doped Si rich oxide/SiO{sub 2} and silicon rich nitride/SiN{sub x} bilayers on molybdenum-fused silica substrates for vertically structured Si quantum dot solar cells

Vertically structured Si quantum dots (QDs) solar cells with molybdenum (Mo) interlayer on quartz substrates would overcome current crowding effects found in mesa-structured cells. This study investigates the compatibility between boron (B) doped Si QDs bilayers and Mo-fused silica substrate. Both Si/SiO{sub 2} and Si/SiN{sub x} based QDs bilayers were studied. The material compatibility under high temperature treatment was assessed by examining Si crystallinity, microstress, thin film adhesion, and Mo oxidation. It was observed that the presence of Mo interlayer enhanced the Si QDs size confinement, crystalline fraction, and QDs size uniformity. The use of B doping was preferred compared to phosphine (PH{sub 3}) doping studied previously in terms of better surface and interface properties by reducing oxidized spots on the film. Though crack formation due to thermal mismatch after annealing remained, methods to overcome this problem were proposed in this paper. Schematic diagram to fabricate full vertical structured Si QDs solar cells was also suggested.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Vertical-cavity in-plane heterostructures: Physics and applications

We show that in-plane (lateral) heterostructures realized in vertical cavities with high contrast grating reflectors can be used to significantly modify the anisotropic dispersion curvature, also interpreted as the photon effective mass. This design freedom enables exotic configurations of heterostructures and many interesting applications. The effects of the anisotropic photon effective mass on the mode confinement, mode spacing, and transverse modes are investigated. As a possible application, the method of boosting the speed of diode lasers by engineering the photon-photon resonance is discussed. Based on this platform, we propose a system of two laterally coupled cavities, which shows the breaking of parity-time symmetry in vertical cavity structures.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Spin-dependent transport properties of a GaMnAs-based vertical spin metal-oxide-semiconductor field-effect transistor structure

We fabricate a vertical spin metal-oxide-semiconductor field-effect transistor (spin-MOSFET) structure, which is composed of an epitaxial single-crystal heterostructure with a ferromagnetic-semiconductor GaMnAs source/drain, and investigate its spin-dependent transport properties. We modulate the drain-source current I{sub DS} by ∼±0.5% with a gate-source voltage of ±10.8 V and also modulate I{sub DS} by up to 60% with changing the magnetization configuration of the GaMnAs source/drain at 3.5 K. The magnetoresistance ratio is more than two orders of magnitude higher than that obtained in the previous studies on spin MOSFETs. Our result shows that a vertical structure is one of the hopeful candidates for spin MOSFET when the device size is reduced to a sub-micron or nanometer scale.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Structure and photoluminescence properties of carbon nanotip-vertical graphene nanohybrids

We report on the effective enhancement and tuning of photoluminescence (PL) by combining vertical graphene nanoflakes (VGs) and carbon nanotips (CNTPs). The VGs are grown on the vertical CNTPs by hot filament chemical vapor deposition in the methane environment, where the CNTPs are synthesized on silicon substrates by CH{sub 4}-H{sub 2}-N{sub 2} plasma-enhanced hot filament chemical vapor deposition. The results of field emission scanning electron microscopy, transmission electron microscopy, micro-Raman spectroscopy, and X-ray photoelectron spectroscopy indicate that the VGs can be grown on the CNTP and silicon substrate surfaces with the orientation perpendicular to the surfaces of CNTPs and silicon substrates. The PL properties of VG, CNTP, and CNTP-VG structures are studied using a 325 nm line of He-Cd laser as the excitation source. The PL results indicate that the PL of VGs is enhanced by the CNTPs due to the increasing density of PL emitters, while the PL properties of the nanohybrid system can be tuned. Furthermore, the potential applications of CNTP-VG structures in optoelectronic devices are analyzed. These results contribute to the design of functional graphene-based materials and the development of next-generation optoelectronic devices.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

High-voltage vertical GaN Schottky diode enabled by low-carbon metal-organic chemical vapor deposition growth

Vertical GaN Schottky barrier diode (SBD) structures were grown by metal-organic chemical vapor deposition on free-standing GaN substrates. The carbon doping effect on SBD performance was studied by adjusting the growth conditions and spanning the carbon doping concentration between ≤3 × 1015 cm−3 and 3 × 1019 cm−3. Using the optimized growth conditions that resulted in the lowest carbon incorporation, a vertical GaN SBD with a 6-μm drift layer was fabricated. A low turn-on voltage of 0.77 V with a breakdown voltage over 800 V was obtained from the device.

Cao, Y. (ORCID:0000000185535079)↗
DOE OSTI2016

Hydrothermal growth and characterization of vertically well-aligned and dense ZnO nanorods on glass and silicon using a simple optimizer system

Vertically, well-aligned and high density ZnO nanorods were successfully hydrothermally grown on glass and silicon substrates using a simple and low cost system. The mechanism of synthesis of ZnO nanorods, generated with our system under hydrothermal conditions, is investigated in this report. Field-emission scanning electron microscopy indicated that the fabricated ZnO nanorods on both substrates have hexagonal shape with diameters ranging from 20 nm to 70 nm which grew vertically from the substrate. XRD analysis confirms the formation of wurtzite ZnO phase with a preferred orientation along (002) direction perpendicular on the substrate and enhanced crystallinity. The low value of the tensile strain (0.126 %) revealed that ZnO nanorods preferred to grow along the c-axis for both substrates. Photoluminescence spectra exhibited a strong, sharp UV near band edge emission peak with narrow FWHM values for both samples.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2016

Heat transfer in porous medium embedded with vertical plate: Non-equilibrium approach - Part A

Heat transfer in a porous medium embedded with vertical flat plate is investigated by using thermal non-equilibrium model. Darcy model is employed to simulate the flow inside porous medium. It is assumed that the heat transfer takes place by natural convection and radiation. The vertical plate is maintained at isothermal temperature. The governing partial differential equations are converted into non-dimensional form and solved numerically using finite element method. Results are presented in terms of isotherms and streamlines for various parameters such as heat transfer coefficient parameter, thermal conductivity ratio, and radiation parameter.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Assessment of the beam path deflection for a vertically installed microwave interferometer in SUNIST

Microwave interferometry has been widely employed to provide reliable line averaged electron density measurement on plasma devices. For a vertically installed interferometer on a tokamak, the refraction problem, which distorts the beam path and aggravates power loss at the receiving antenna, may become significant if taking the cross section shape into account. Increasing the frequency of the probing microwave can alleviate the distortion, but at the expense of losing the density resolution. To seek for an optimized frequency, previous calculations are mainly based on the cylindrical column geometry which grossly underestimates the deflection of the beam path induced by the plasma shape, and empirical suggestions indicating n{sub e0}/n{sub c} = 1/2 ∼ 1/3 may not always be the appropriate option. Here a single ray tracing method is applied to estimate the final horizontal deviation at the receiving antenna, which is supposed to represent the level of power loss. The calculation is carried out under the real tokamak geometry in Sino-UNIted Spherical Tokamak (SUNIST) with the cross section parameters obtained from the equilibrium reconstruction, and the result indicates that for a target density of 1.2 × 10{sup 19} m{sup −3}, a frequency of at least 100 GHz is desirable to reduce the power loss to an acceptable level. This would be helpful for the design of a vertically installed interferometer on SUNIST.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2017

Vertical oscillations of dust particles in a strongly magnetized plasma sheath induced by horizontal laser manipulation

Experimental studies are presented where dust particles are suspended in the lower sheath region of an argon rf discharge at a strong vertical magnetic field from B = 1.5 T up to 2.27 T. There the particles arranged in an ordered pattern imposed by the upper mesh electrode. It is observed that the particles jump to a new equilibrium position, where they exhibit self-excited vertical oscillations when illuminated by a horizontal laser beam. Furthermore, the dust motion is weakly damped during an upward jump and strongly damped during the return to the equilibrium after the laser is switched off. A model based on delayed charging is presented that can describe the observed behavior.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2019

Determining interface structures in vertically aligned nanocomposite films

Vertically aligned nanocomposites (VANs) films have self-assembled pillar-matrix nanostructures. Owing to their large area-to-volume ratios, interfaces in VAN films are expected to play key roles in inducing functional properties, but our understanding is hindered by limited knowledge about their structures. Motivated by the lack of definitive explanation for the experimentally-found enhanced ionic conductivity in Sm-doped-Ce0 2 /SrTiO 3 VAN films, we determine the structure at vertical interfaces using random structure searching and explore how it can affect ionic conduction. Interatomic potentials are used to perform the initial searching, followed by firstprinciples calculations for refinement. Previously unknown structures are found, with lower energy than that of an optimized hand-built model. We find a strongly distorted oxygen sub-lattice which gives a complex landscape of vacancy energies. The cation lattice remains similar to the bulk phase, but has a localized strain field. The excess energy of the interface is similar to that of a high angle grain boundaries in SrTiO 3 . None of the observations supports ionic conductivity being enhanced locally at the interface.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Probing unintentional Fe impurity incorporation in MOCVD homoepitaxy GaN: Toward GaN vertical power devices

Unintentional impurity incorporation in GaN drift layers represents a challenging issue that can limit their potential performance in vertical power devices. In this paper, we focus on studying the origins of Fe impurity incorporation in metal-organic chemical vapor deposition (MOCVD) grown GaN materials. Acting as a compensator in n-type GaN drift layers, Fe impurities can reduce the electron mobility in GaN and limit the lowest controllable doping level. Two sources, the sample cleaning process and growth susceptor, were identified as the main mechanisms of Fe incorporation in the MOCVD GaN growth process. It was found that solvent cleaning of the wafer can introduce significant Fe contamination at the growth interface, which would slowly be incorporated into the GaN epilayer, thus causing background Fe impurity as high as 10 17 cm -3 level. Moreover, the Fe impurity in the coating material on the susceptor can introduce additional Fe impurity during the growth process. Our studies revealed that the Fe impurity level could be significantly suppressed by more than two orders when an alternative cleaning process was used and the susceptor surface was fully covered by substrates. Characterization of the Fe impurity concentrations was performed via secondary ion mass spectrometry. The trap level (E C - 0.57) eV from deep-level transient spectroscopy that had previously been attributed to Fe confirmed the carrier compensation effect from Fe. Room temperature Hall mobility as high as 1007 cm 2 /V s was achieved on the MOCVD grown low-Fe GaN. Results from this work will provide guidance for achieving high purity GaN toward high performance GaN vertical power devices.

42 ENGINEERING↗
DOE OSTI2024

Breakdown characteristics analysis of kV-class vertical GaN PIN rectifiers by wafer-level sub-bandgap photoluminescence mapping

This work reports analysis of the reverse-bias breakdown characteristics of homojunction gallium nitride (GaN) p–i–n (PIN) rectifiers fabricated on bulk GaN substrates. Sub-bandgap photoluminescence mapping at room temperature as a contactless, non-destructive wafer inspection method was performed to analyze the impact of material properties on grown GaN PIN diodes and to study the correlation between defect types and breakdown characteristics of vertical GaN PIN rectifiers. Under the sub-bandgap excitation, yellow luminescence is dominant. The premature breakdown characteristics of the fabricated kV-class vertical GaN PIN rectifiers with nitrogen-implanted floating guard rings are found to be associated with material defects and deep level complexes. Photoluminescence mapping has demonstrated its effectiveness in quantitative analysis of dislocations and other types of defects.

42 ENGINEERING↗
DOE OSTI2026

Ultrafast vertical photoconductive intrinsic diamond switch with high current (17.1 A at 1 kV)

Here, this Letter reports on a vertical, bulk-conducting photoconductive semiconductor switch (PCSS) fabricated on an intrinsic Type IIa single-crystal diamond substrate. Under near-bandgap excitation at 225 nm with a 20 μ J pulse, a strong photocurrent response of 17.1 A at 1 kV DC bias magnitude is obtained by (i) tuning the optical trigger wavelength to the “matched-absorption” window (224–235 nm) near the band edge, where the optical penetration depth becomes comparable to the 500 μ m substrate thickness, and (ii) choosing the bias polarity ensuring electron-dominant conduction, given that electrons have a higher mobility than holes in diamond. The PCSS has an area-normalized responsivity of 54.2 mA W −1 cm −2 and an effective on-resistance of 8.48 Ω, with a fast 90%–10% transient fall time of 25 ns, attributed to carrier sweep-out. These results support vertical, bulk-conducting intrinsic diamond PCSS as a promising platform for high-power optical switching and provide new insight into intrinsic photoconductivity in diamond.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2020

Superconductivity enhancement in phase-engineered molybdenum carbide/disulfide vertical heterostructures

Stacking layers of atomically thin transition-metal carbides and two-dimensional (2D) semiconducting transition-metal dichalcogenides, could lead to nontrivial superconductivity and other unprecedented phenomena yet to be studied. In this work, superconducting α-phase thin molybdenum carbide flakes were first synthesized, and a subsequent sulfurization treatment induced the formation of vertical heterolayer systems consisting of different phases of molybdenum carbide—ranging from α to γ' and γ phases—in conjunction with molybdenum sulfide layers. These transition-metal carbide/disulfide heterostructures exhibited critical superconducting temperatures as high as 6 K, higher than that of the starting single-phased α-Mo 2 C (4 K). We analyzed possible interface configurations to explain the observed moiré patterns resulting from the vertical heterostacks. Our density-functional theory (DFT) calculations indicate that epitaxial strain and moiré patterns lead to a higher interfacial density of states, which favors superconductivity. Such engineered heterostructures might allow the coupling of superconductivity to the topologically nontrivial surface states featured by transition-metal carbide phases composing these heterostructures potentially leading to unconventional superconductivity. Moreover, we envisage that our approach could also be generalized to other metal carbide and nitride systems that could exhibit high-temperature superconductivity.

heterostructure↗