Time response of Cd{sub 0.9}Zn{sub 0.1}Te crystals under transient and pulsed irradiation
A CdZnTe detector based on high-quality Cd{sub 0.9}Zn{sub 0.1}Te crystals was developed and tested as a monitor in high-intensity radiation fields. The current-voltage measurements were performed using thermally evaporated Au contacts deposited on the crystals, which revealed resistivity of 10{sup 10}{Omega}{center_dot}cm. Typical leakage current for the planar devices was {approx}3 nA for a field strength of 1000 V{center_dot}cm{sup -1}. The test results show that the CdZnTe detector has a fast time response, with a rise time of approximately 2 ns, when exposed to transient and pulsed irradiation of X-rays or electron beams. The decay of current curves is observed and discussed according to charge carrier trapping effects and space-charge accumulation mechanisms. It is suggested that the current decreases quickly with strengthening of the electric field, possibly because of charge de-trapping.