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Miniature amplifier for bioelectronic instrumentation consumes only about 100 mW and has frequency response flat to within 0.5 dB from 0.14 to 450 Hz. Device consists of five thin film substrates, which contain eight operational amplifiers and seven field-effect transistor dice.
A quasi-optical power density meter for millimeter and submillimeter wavelengths has been developed. The device is a 2-cm2 thin-film bismuth bolometer deposited on a mylar membrane. The resistance responsivity is 150 Ohms/W, and the time constant is 1 min. The meter is calibrated at DC. The bolometer is much thinner than a wavelength, and can thus be modeled as a lumped resistance in a transmission-line equivalent circuit. The absorption coefficient is 0.5 for 189-Ohms/square film. The power-density meter has been used to measure absolute power densities for millimeter-wave antenna efficiency measurements. Absolute power densities of 0.5 mW/sq cm have been measured to an estimated accuracy of 5 percent.
The performance of 7.3-GHz two-pole bandpass filters (5% bandwidth) fabricated on double-sided Y-Ba-Cu-O and Tl-Ba-Ca-Cu-O thin films deposited on LaAlO3 is discussed. At 77 K, the Tl-Ba-Ca-Cu-O and Y-Ba-Cu-O superconducting filters exhibited minimum passband insertion losses of 0.3 and 1.2 dB, respectively. An insertion loss of 3.4 dB was measured for an all-gold filter at 77 K.
Improved microbolometers of superconducting-transition type developed with view toward eventual fabrication of staring, infrared-imaging planar arrays of such microbolometers integrated with addressing electronic circuitry. Superconducting thin films in microbolometers epitaxial. These devices exhibit high sensitivity and low noise.
Electrical conduction properties of vacuum evaporated thin cadmium sulfide films
Thin GaAs epi-layers with good crystallographic quality were grown using a (100) Si-substrate on which a thin Ge epi-interlayer was grown by CVD from germane. Both antireflection-coated metal oxide semiconductor (AMOS) and n(+)/p homojunction structures were studied. The AMOS cells were fabricated on undoped-GaAs epi-layers deposited on bulk poly-Ge substrates using organo-metallic CVD film-growth, with the best achieved AM1 conversion efficiency being 9.1%. Both p-type and n(+)-type GaAs growth were optimized using 50 ppm dimethyl zinc and 1% hydrogen sulfide, respectively. A direct GaAs deposition method in fabricating ultra-thin top layer, epitaxial n(+)/p shallow homojunction solar cells on (100) GaAs substrates (without anodic thinning) was developed to produce large area (1 sq/cm) cells, with 19.4% AM1 conversion efficiency achieved. Additionally, an AM1 conversion efficiency of 18.4% (17.5% with 5% grid coverage) was achieved for a single crystal GaAs n(+)/p cell grown by OM-CVD on a Ge wafer.
Transmitter audio amplifier module, low pass filter module, summing network modules, and operational amplifier for thin film personal communications and telemetry system
Substrates survive high deposition temperatures. High-temperature-resistant polymers candidate materials for use as substrates of lightweight, flexible, radiation-resistant solar photovoltaic cells. According to proposal, thin films of copper indium diselenide or cadmium telluride deposited on substrates to serve as active semiconductor layers of cells, parts of photovoltaic power arrays having exceptionally high power-to-weight ratios. Flexibility of cells exploited to make arrays rolled up for storage.
Sensor consisting of superconductive film mounted on a dipstick measures the level of liquid helium in a Dewar flask. The sensor is made by depositing a thin film of niobium metal to a thickness of 2000 angstroms on a quartz substrate, which is then mounted on a graduated dipstick.
A two terminal semiconductor strain sensor which makes use of an evaporated piezoelectric layer to modulate the forward current-voltage characteristics of a thin film diode is described. The physical mechanisms are discussed and compared to other types of semiconductor sensors. Application to the electromechanical design of ultraminiature pressure transducers is discussed.
Computer simulations of a two dimensional lattice of magnetic dipoles are performed on the Connection Machine. The lattice is a discrete model for thin films of amorphous rare-earth transition metal alloys, which have application as the storage media in erasable optical data storage systems. In these simulations, the dipoles follow the dynamic Landau-Lifshitz-Gilbert equation under the influence of an effective field arising from local anisotropy, near-neighbor exchange, classical dipole-dipole interactions, and an externally applied field. Various sources of coercivity, such as defects and/or inhomogeneities in the lattice, are introduced and the subsequent motion of domain walls in response to external fields is investigated.
This work deals with the performance of coupled microstripline phase shifters (CMPS) fabricated using BaxSr 1 -xTiO 3 (BST) ferroelectric thin films. The CMPS were fabricated using commercially available pulsed laser deposition BST films with Ba:Sr ratios of 30:70 and 20:80. Microwave characterization of these CMPS was performed at upper Kuband frequencies, particularly at frequencies near 16 and 18 GHz. X-ray diffraction studies indicate that the 30:70 films exhibit almost a 1:1 ratio between the in-plane and out-of-plane lattice parameters, suggesting that their cubics create strain -free films suitable for producing CMPS devices with reduced hysteresis in the paraelectric state. The quality of performance of the CMPS was studied based on their relative phase shift and insertion loss within the DC bias range of 0 to 400 V (i.e., E-field ranges within 0 to 53 V/micron). The performance of the CMPS was tested as a function of temperature to investigate their operation in the paraelectric, as well as in the ferroelectric, state (i.e., above and below the Curie temperature, respectively). The novel behavior discussed here is based on the experimental observation of the CMPS. This behavior, observed for the aforementioned cation ratio, highlights the relevance of good crystalline structure for high-quality CMPS.
Both horizontal hot-wall and vertical cold-wall atmospheric chemical spray pyrolysis processes deposited near single-phase stoichiometric CuInS2 thin films. Single-source precursors developed for ternary chalcopyrite materials were used for this study, and a new liquid phase single-source precursor was tested with a vertical cold-wall reactor. The depositions were carried out under an argon atmosphere, and the substrate temperature was kept at 400 C. Columnar grain structure was obtained with vapor deposition, and the granular structure was obtained with (liquid) droplet deposition. Conductive films were deposited with planar electrical resistivities ranging from 1 to 30 Omega x cm.
Protection for polymeric surfaces is needed to make them durable in the low Earth orbital environment, where oxidation by atomic oxygen is the predominant failure mechanism. Thin film coatings of oxides such as silicon dioxide are viable candidates to provide this protection, but concern has been voiced over the ability of these coatings to protect when defects are present in the coating due to surface anomalies occurring during the deposition process, handling, or micrometeoroid and debris bombardment in low Earth orbit. When a defected coating protecting a polymer substrate is exposed to atomic oxygen, the defect provides a pathway to the underlying polymer allowing oxidation and subsequent undercutting to occur. Defect undercutting was studied for sputter deposited coatings of silicon dioxide on polyimide Kapton. Preliminary results indicate that undercutting may be limited as long as the coating remains intact with the substrate. Therefore, coatings may not need to be defect free to give protection to the underlying surface.
The development of a proposed wet insulation-resistance qualification test specification for production-line modules is presented. Laboratory research directed toward understanding and eliminating problems associated with electrical isolation of thin-film photovoltaic module circuitry is presented. Test results serve to measure module field life as limited by electrochemical corrosion degradation mechanisms. Current module-level research covering encapsulant voltage withstand capability is also described, and suggestions for improving module electrical isolation are offered.
Samples of LaAlO3 made by flame fusion and Czochralski method were subjected to the same temperature conditions that they have to undergo during the laser ablation deposition of YBa2Cu3O(7 - delta) thin films. After oxygen annealing at 750 C, the LaAlO3 substrate made by two methods experienced surface roughening. The degree of roughening on the substrate made by Czochralski method was three times greater than that on the substrate made by flame fusion. This excessive surface roughening may be the origin of the experimentally observed lowering of the critical temperature of a film deposited by laser ablation on a LaAlO3 substrate made by Czochralski method with respect to its counterpart deposited on LaAlO3 substrates made by flame fusion.
Wireless communication in jet engines and high temperature industrial applications requires FD integrated circuits (RFICs) on wide bandgap semiconductors such as Silicon Carbide (SiC). In this paper, thin-film NiCr resistors, MIM capacitors, and spiral inductors are fabricated on a high purity semi-insulating 4H-SiC substrate. The devices are experimentally characterized through 50 GHz at temperatures of up to 500 C and the equivalent circuits are deembedded from the measured data. It is shown that the NiCr resistors are stable within 10% to 300 C while the capacitors have a value stable within 10% through 500 C.
Several oxidation techniques are discussed which have been found to increase the open circuit (V sub oc) of metal-GaAs Schottky barrier solar cells, the oxide chemistry, attempts to measure surface state parameters, the evolving characteristics of the solar cell as background contamination (has been decreased, but not eliminated), results of focused Nd/YAG laser beam recrystallization of Ge films evaporated onto tungsten, and studies of AMOS solar cells fabricated on sliced polycrystalline GaAs wafers. Also discussed are projected materials availability and costs for GaAs thin-film solar cells.