Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “SiO2”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 775 records · Page 43
All sourcesNASA NTRSDOE OSTI
NASA NTRS1985

Bondability of Al-Si thin film in thermosonic gold wire bonding

The bondability of two kinds of Al-Si thin films in thermosonic Au wire bonding was examined by means of microshear tests. One type of film was formed by sputtering an Al-2% Si alloy, and the other was formed by depositing an 0.05 micrometer-thick polysilicon layer on SiO2 by chemical vapor deposition (CVD) and then depositing a 1.2 micrometer-thick Al layer on them by evaporation. After heat-treatment at 450 deg for 30 min., Si in the Al-Si film crystallized. The grain size of the crystallized Si affects the thermosonic wire bondability, i.e., for Al-2% Si sputtered films, good bondability was obtained under relatively small (1.0 micrometer) grain size conditions. In the successive layer process, on the other hand, the grain size of crystallized Si varies with the polysilicon CVD temperature. The optimum CVD temp. was determined from the standpoint of bondability with respect to grain size.

Nakagawa, K.↗
NASA NTRS1984

Material growth and characterization for solid state devices

Manganese was used as the dopant for p-type InGaAs layers grown on semi-insulating (Fe-doped) and n-type (Sn-doped) InP substrates. Optical, electrical (Hall) and SIMS measurements were used to characterize the layers. Mn-diffusion into the substrate (during the growth of In GaAs) was observed only when Fe-doped substrates were used. Quaternary layers of two compositions corresponding to wavelengths (energy gaps) of approximated 1.52 micrometers were successfully grown at a constant temperature of 640 C and InP was grown in the temperature range of 640 C to 655 C. A study of the effect of pulses on the growth velocity of InP indicated no significant change as long as the average applied current was kept constant. A system for depositing films of Al2O3 by the pyrolysis of aluminum isopropoxide was designed and built. Deposited layers on Si were characterized with an ellipsometer and exhibited indices of refraction between 1.582 and 1.622 for films on the order of 3000 A thick. Undoped and p-type (Mn-doped) InGaAs epitaxial layers were also grown on Fe-doped InP substrates through windows in sputtered SiO2 (3200 A thick) layers.

Stefanakos, E. K.↗
NASA NTRS1985

Mechanical protection of DLC films on fused silica slides

Measurements were made with a new test for improved quantitative estimation of the mechanical protection of thin films on optical materials. The mechanical damage was induced by a sand blasting system using spherical glass beads. Development of the surface damage was measured by the changes in the specular transmission and reflection, and by inspection using a surface profilometer and a scanning electron microscope. The changes in the transmittance versus the duration of sand blasting was measured for uncoated fused silica slides and coated ones. It was determined that the diamond like carbon films double the useful optical lifetime of the fused silica. Theoretical expressions were developed to describe the stages in surface deterioration. Conclusions were obtained for the SiO2 surface mechanism and for the film removal mechanism.

Nir, D.↗
NASA NTRS1985

Processing technology for high efficiency silicon solar cells

Recent advances in silicon solar cell processing have led to attainment of conversion efficiency approaching 20%. The basic cell design is investigated and features of greatest importance to achievement of 20% efficiency are indicated. Experiments to separately optimize high efficiency design features in test structures are discussed. The integration of these features in a high efficiency cell is examined. Ion implantation has been used to achieve optimal concentrations of emitter dopant and junction depth. The optimization reflects the trade-off between high sheet conductivity, necessary for high fill factor, and heavy doping effects, which must be minimized for high open circuit voltage. A second important aspect of the design experiments is the development of a passivation process to minimize front surface recombination velocity. The manner in which a thin SiO2 layer may be used for this purpose is indicated without increasing reflection losses, if the antireflection coating is properly designed. Details are presented of processing intended to reduce recombination at the contact/Si interface. Data on cell performance (including CZ and ribbon) and analysis of loss mechanisms are also presented.

Spitzer, M. B.↗
NASA NTRS1984

Reaction of amorphous Ni-W and Ni-N-W films with substrate silicon

Wiley et al. (1982) have studied sputtered amorphous films of Nb-Ni, Mo-Ni, Si-W, and Si-Mo. Kung et al. (1984) have found that amorphous Ni-Mo films as diffusion barriers between multilayer metallizations on silicon demonstrate good electrical and thermal stability. In the present investigation, the Ni-W system was selected because it is similar to the Ni-Mo system. However, W has a higher silicide formation temperature than Mo. Attention is given to aspects of sample preparation, sample characterization, the interaction between amorphous Ni-W films and Si, the crystallization of amorphous Ni(36)W(64) films on SiO2, amorphous Ni-N-W films, silicide formation and phase separation, and the crystallization of amorphous Ni(36)W(64) and Ni(30)N(21)W(49) layers.

Zhu, M. F.↗
NASA NTRS1984

Emitter formation in dendritic web silicon solar cells

The use of liquid dopants and liquid masks for p-n junction formation in dendritic web solar cells was investigated and found to be equivalent to the use of gaseous dopants and CVD SiO2 masks previously used. This results in a projected cost reduction of 0.02 1980$/Watt for a 25 MW/year production line, and makes possible junction formation processes having a higher throughput than more conventional processes. The effect of a low-energy (0.4 keV) hydrogen ion implant on dendritic web solar cells was also investigated. Such an implant was observed to improve Voc and Jsc substantially. Measurements of internal quantum efficiency suggest that it is the base of the cell, rather than the emitter, which benefits from the hydrogen implant. The diffusion length for electrons in the p-type base increased from 53 microns to 150 microns in one case, with dendritic web cell efficiency being boosted to 15.2 percent. The mechanism by which low-energy hydrogen ions can penetrate deeply into the silicon to effect the observed improvement is not known at this time.

Meier, D. L.↗
NASA NTRS1985

The feasibility of silicon on garnet technology

The feasibility of combining silicon and magnetic bubble technologies is demonstrated. Functional MOSFETs have been fabricated on top of bubble films coated with 1-micron thick SiO2 layers. The large grain silicon necessary for these devices is obtained by laser recrystallization of polycrystalline silicon (polysilicon). The laser-recrystallization process causes changes in the magnetic properties of the bubble film; however, these changes can be reversed by subsequent thermal anneals. The required temperature treatments after laser annealing are compatible with the MOSFET fabrication process.

Rasky, P. H. L.↗
NASA NTRS1985

Microstructure of reaction-bonded silicon nitride consolidated by isostatic hot-pressing

A microstructural examination and chemical analysis are conducted for reaction-bonded Si3N4 specimens that were isostatically hot pressed at 1850, 1950, and 2050 C. The present observations indicate that the previously reported increase in the 1200 C bend strength of reaction-bonded Si3N4, after pressing at 2050 C exclusively, is due to the relative oxygen levels of the isostatically hot pressed specimens; calculations show that an SiO2 content of less than about 2.2 vol pct is needed to yield the 1200 C strength increase.

Mieskowski, D. M.↗
NASA NTRS1985

Shock induced radiation from minerals

Schmitt and Ahrens (1983) have concluded that the type of optical emission produced during shock compression was dependent upon phase changes taking place during shock compression. The present study is concerned with new observations of shock-induced optical radiation from Al2O3, MgO, NaCl, KCl, x-cut and fused SiO2, and LiF at various pressures up to 75 GPa. The experimental setup used in the study is similar to that employed by Schmitt and Ahrens. An Image Converter Camera with a three-frame plug-in unit was added to take two or three exposures of the radiation field during shock wave propagation through the sample, taking into account exposure times in the range from 50 to 500 nsec. The greybody emissions observed in LiF, which undergoes no phase transition, imply that localized heating and perhaps melting occurs in this material during shock deformation.

Schmitt, D.↗
NASA NTRS1985

Thermal history of shock-compressed solids

An isotropic, heterogeneous, viscous thermoplastic model of the uniaxially shock-compressed state in transparent solids is examined with a view to determining the conditions under which this radiation may be nominally thermal or nonthermal. Regions of locally high temperatures producing thermal radiation may develop only where the local viscosity is low and the Maxwell time is short; alternatively, regions of low elastic moduli and long Maxwell time could experience sustained elastic deformation, leading to microfracture and triboluminescence. Attention is given to the cases of MgO and SiO2.

Svendsen, B.↗
NASA NTRS1986

GaAs Semi-Insulating Layer for a GaAs Device

Improved design for GaAs electronic device or integrated circuit designed to operate at cryogenic temperatures, customary SiO2 insulating layer replaced by semi-insulating layer of GaAs. Thermal expansions of device and covering layer therefore match closely, and thermal stresses caused by immersion in cryogenic chamber nearly eliminated.

Sherrill, G.↗
NASA NTRS1985

Estimation of particle size based on LDV measurements in a de-accelerating flow field

The accuracy of velocity measurements made with a laser velocimeter is strongly dependent upon the response of the seeding particles to the dynamics of the flow field. The smaller the particle the better the response to flow fluctuations and gradients and therefore the more accurate velocity measurement. In direct conflict is the requirement of light scattering efficiency to obtain signals with the laser velocimeter which, in general, is better as the particle size is increased. In low speed flow fields these two requirements on particle size overlap and accurate measurements may be obtained. However in high speed flows, where the velocity gradients may be severe, very small particles are required to maintain sufficient dynamic response characteristics to follow the flow. Therefore if velocity measurements are to be made in these flows, the laser velocimeter must be designed with sufficient sensitivity to obtain signals from these small particles. An insitu determination of the size distribution of kaolin particles (Al2O3, .2 + or - SiO2 . 2H2O) in the 16-foot Transonic Tunnel and the sensitivity characteristics of the laser velocimeter system is described.

Meyers, J. F.↗
NASA NTRS1985

Phenomenological study of the behavior of some silica formers in a high velocity jet fuel burner

Samples of four silica formers: single crystal SiC, sintered alpha-SiC, reaction sintered Si3N4 and polycrystalline MoSi2, were subjected to a Mach 1 jet fuel burner for 1 hr, at a sample temperature of 1375 deg C (2500 deg F). Two phenomena were identified which may be deleterious to a gas turbine application of these materials. The glass layer formed on the MoSi2 deformed appreciably under the aerodynamic load. A scale developed on the samples of the other materials which consisted of particular matter from the gas stream entrapped in a SiO2 matrix.

Cawley, J. D.↗
NASA NTRS1985

Capsulation of moldings made from silicon ceramic material

Ceramic articles are potted for hot isostatic pressing by porous glass and/or ceramic coating which is sintered to a pressure-tight coating in vacuo. Thus, a powdered SiO2 glass mixture with saturated alcohol sterin is sprayed on a SI3N4 ceramic, dried, introduced into the press which is evacuated to less than 0.013 mbar and heated to approximately 1200 C to drive off the organic binder and leave a powdered glass coating on the ceramic. The coating is sintered by heating to approximately 1200 C for 0.5 to 2 hours and forms a tight gass-impermeable layer. The press is heated to approximately 1700 C at 1000-300 bar and isostatic pressing is performed in the conventional manner.

Rossmann, A.↗
NASA NTRS1986

Conductimetric determination of decomposition of silicate melts

A description of a procedure is given to detect decomposition of silicate systems in the liquid state by conductivity measurements. Onset of decomposition can be determined from the temperature curves of resistances measured on two pairs of electrodes, one above the other. Degree of decomposition can be estimated from temperature and concentration dependency of conductivity of phase boundaries. This procedure was tested with systems PbO-B2O3 and PbO-B2O3-SiO2.

Kroeger, C.↗
NASA NTRS1986

Technology for satellite power conversion

The work performed in this reporting period has concentrated on the metal-oxide-metal (MOM) diode. The fabrication procedure begins with the deposition of gold probing pads to provide a non-oxidizing contact to test the dc characteristics to the diode accurately. A thin patch capped with an insulating SiO2 layer, is deposited next to form the first half of the diode. The other half of the diode, typically Ni, is deposited completing the conduction path from the oxidized edge of the Ni patch to the opposite gold probing pad. It is important in this step that the last metallization take place without exposing the newly oxidized surface to the atmosphere. Successful production of diodes has been achieved. Work on millimeter wave frequency rectennas incorporating known semiconductor diode technology has been initiated.

Gouker, M. A.↗
NASA NTRS1985

Thermal regimes in the detachment fault environment as deduced from fluid inclusions

Extensional tectonism, which dominates middle- and late-Tertiary geology in western Arizona, southeastern California, and southern Nevada, is characterized by normal regionally extensive, low-angle detachment faults. The decollement movement of Fupper plate rocks relative to lower plate assemblages created extensive zones of dilatency, including synthetic and antithetic listric normal faults, tear faults, tectonic crush breccias, shatter breccias, and gash veins in lithologic units above and below the detachment. The tectonically enhanced permeability above and below the detachment fault permitted mass migration of large volumes of hydrothermal solutions along the fault zone during and following upper plate movement. Major quantities of MgO, CaO, K2O, FeO/Fe2O3, SiO2 and CO2 were added to rocks in and near the detachment and related structures. Also introduced were varying amounts of trace elements including Mn, Cu, S, Mo, Ba, Au, Pb, Zn, U and/or Ag. Minerals containing fluid incusions were collected from all of these loci at locations in detachment faulted terranes in western Arizona and southeastern California.

Beane, R. E.↗
NASA NTRS1986

Correlation of processing and sintering variables with the strength and radiography of silicon nitride

A sintered Si3N4-SiO2-Y2O3 composition, NASA 6Y, was developed that reached four-point flexural average strength/standard deviation values of 857/36, 544/33, and 462/59 MPa at room temperature, 1200 and 1370 C respectively. These strengths represented improvements of 56, 38, and 21 percent over baseline properties at the three test temperatures. At room temperature the standard deviation was reduced by over a factor of three. These accomplishments were realized by the iterative utilization of conventional x-radiography to characterize structural (density) uniformity as affected by systematic changes in powder processing and sintering parameters. Accompanying the improvement in mechanical properties was a change in the type of flaw causing failure from a pore to a large columnar beta- Si3N4 grain typically 40 to 80 microns long, 10 to 30 microns wide, and with an aspect ratio of 5:1.

Sanders, W. A.↗