Study of semiconductor heterojunctions of zinc selenide, gallium arsenide, and germanium
Fabrication and properties of gallium arsenide and zinc selenide junctions with germanium, and of gallium arsenide-zinc selenide heterojunctions
Feucht, D. L.↗
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Vapor phase growth technique and system for several III-V compound semiconductors Interim scientific report
Vapor phase growth method for single crystalline preparation of gallium nitride, gallium arsenide alloy, and gallium antimonide alloy
Clough, R.↗
Heteroepitaxy of 3-5 compound semiconductors on insulating substrates Interim report
Heteroepitaxial growth of GaAs films on aluminum oxide substrates by trimethylgallium-arsine process
Manasevit, H. M.↗
One-shot multivibrator with complementary metal-oxide-semiconductor components
Breadboard model is tuned to produce output pulses from one microsecond up to several seconds in width with up to 95 percent duty cycle, and with lower power consumption than previously existing circuits.
Oneill, R. W.↗
Glass-to-metal bonding process improves stability and performance of semiconductor devices
Anodic bonding of glass coverslips to photodiodes and photovoltaic devices eliminates the need for adhesive. The process requires relatively low temperatures /less than 560 degrees C/ and the metals and glass remain solid throughout the bonding process.
Trent, R. L.↗
Development of techniques for the growth of bulk single crystals of several 3-5 compound semiconductors
Techniques for growth of bulk single crystals by Czochralski method
Haggerty, J. J.↗
Penetration and interaction of protons with matter. Part 2 - Experimental studies using semiconductor detectors
Penetration and proton interaction with matter, including stopping power measurements and mean ionization potential values
Crawford, G. W.↗
Research study of structural damage produced in silicon semiconductors by neutron irradiation Semiannual report
Etching techniques for undoped and lithium doped silicon solar cells and observation by surface replication and thin film transmission electron microscopy
Sargent, G. A.↗
Heteroepitaxy of III-V compound semiconductors on insulating substrates Final report
Heteroepitaxy of GaAs films on sapphire and spinel substrates
Manasevit, H. M.↗
Charged particle radiation damage in semiconductors, 15 - Study and determination of an optimum design for space utilized lithium doped solar cells, part 1 Interim final report
Hall coefficient measurements of irradiated lithium doped solar cells
Carter, J. R.↗
Study of semiconductor heterojunctions of ZnSe, GaAs and Ge, 1 May - 31 July 1970
Fabrication problems and device characteristics of ZnSe-GaAs and Ge-GaAs heterojunctions
Feucht, D. L.↗
Semiconductor mechanical sensors
Piezojunction effect and applications in transducers, showing needle and mesa configurations as most promising methods
Monteith, L. K.↗
Method of making a silicon semiconductor device Patent
Doping silicon material with gadolinium to increase radiation resistance of solar cells
Mandelkorn, J.↗
A semiconductor material research program
Feasibility of germanium-silicon alloy single crystals for fabrication of charged particle detectors
Alexander, P.↗
Proposed semiconductor film improvement
Film grown in inert carriers (A, He, or N) displays low impurity, high mobility, and improved crystal structure. Annealing steps used in growing process improves film quality and allows utilization of film for Gunn and LSA devices.
Manasevit, H. M.↗
A high resolution semiconductor detector for applications in space
Nuclear radiation detectors with volumes of approximately 1 cu cm was fabricated from single crystals of germanium-silicon alloy containing as much as 20 weight percent germanium. The properties of these detectors were investigated and will be discussed. Tests reveal that the gamma ray photoelectric peak efficiency of an alloy detector with only 12 weight percent germanium is approximately 4 times that of a silicon detector of equal volume. The room temperature roomure appears to be a good possibility. Storage for long periods at room temperature does not seem to adversely affect these devices. The results of preliminary radiation damage experiments suggest that the alloy detectors possess a radiation damage resistance far greater than that of silicon.
Alexander, P.↗
The effect of the nonuniform dc field on carrier waves in negative differential mobility semiconductors
The growth of a carrier wave propagating through a negative differential mobility semiconducting sample is discussed under nonuniform dc bias conditions. A simple analytical expression for the overall numerical gain is given in terms of current density and of the input and output carrier wave velocities only. Applications to n-type GaAs are discussed.
Bini, M.↗
Cavity perturbation techniques for measurement of the microwave conductivity and dielectric constant of a bulk semiconductor material.
Cavity perturbation techniques offer a very sensitive and highly versatile means for studying the complex microwave conductivity of a bulk material. A knowledge of the cavity coupling factor in the absence of perturbation, together with the change in the reflected power and the cavity resonance frequency shift, are adequate for the determination of the material properties. This eliminates the need to determine the Q-factor change with perturbation which may lead to appreciable error, especially in the presence of mismatch loss. The measurement accuracy can also be improved by a proper choice of the cavity coupling factor prior to the perturbation.
Eldumiati, I. I.↗