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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 775 records · Page 43
All sourcesNASA NTRSDOE OSTI
NASA NTRS2003

1400-1900 GHz local oscillators for the Herschel Space Observatory

JPL continues to develop robust planar, all solid-state sources to cover the 1414 to 1908 GHz band. These sources will be used as local oscillators to drive hot electron bolometer (HEB) heterodyne mixers on the Herschel Space Observatory to observe high resolution spectra in the interstellar medium. We report our current progress and present recent results.

Schottky diode frequency multiplier THz local osci↗
NASA NTRS1998

A2.5 THz Receiver Front-End for Spaceborne Application

The OH radical is an important player in known ozone depletion cycles; however, due to its location in the atmosphere, it must be studied from either a balloon or spaceborne platform.

receiver ozone destruction Earth Observing System ↗
NASA NTRS2003

LO sources for 1-3 THz: present status and future prospective

This talk will present an overview of the current technologies that are available for implementing local oscillator sources for 1-3 THz applications. Progress to date on specific components will be discussed in some detail. Outstanding issues and concerns regarding practical implementation of these new technologies will also be discussed.

Schottky diode multipliers↗
NASA NTRS2005

Local oscillator chain for 1.55 to 1.75 THz with 100-(mu)W peak power

We report on the design and performance of a fix-tuned x2x 3x 3 frequency multiplier chain that covers 1.55-1.75 THz. The chain is nominally pumped with 100 mW at W-band. At 120 K the measured output power is larger than 4 (mu)W across the band with a peak power of 100 (mu) W at 1.665 THz. A similar chain operated at room temperature produced a peak power of 21 (mu)W. These power levels now make it possible to deploy multipixel heterodyne imaging arrays in this frequency range.

frequency multiplier↗
NASA NTRS2005

Planar diode multiplier chains for THz spectroscopy

High-resolution laboratory spectroscopy is utilized as a diagnostic tool to determine noise and harmonic content of balanced [9]-[11] and unbalanced [12]-[14] multiplier designs. Balanced multiplier designs suppress unintended harmonics more than -20dB. Much smaller values were measured on unbalanced multipliers.

high-resolution spectroscopy↗
NASA NTRS2006

A 260-340 GHz Dual Chip Frequency Tripler for THz Frequency Multiplier Chains

We designed and fabricated a fix-tuned balanced frequency tripler working in the 260-340 GHz band to be the first stage of a x3x3x3 multiplier chain to 2.7 THz. The design of a dual-chip version of this multiplier featuring an input splitter / output combiner as part of the input / output matching networks of both chips - with no degradation of the expected bandwidth and efficiency- will be presented.

Schottky diodes↗
NASA NTRS2004

Tunable All-Solid-State Local Oscillators to 1900 GHz

We present a status report of an ongoing effort to develop robust tunable all-solid-state sources up to 1900 GHz for the Heterodyne Instrument for the Far Infrared (HIFI) on the Herschel Space Observatory. GaAs based multi-chip power amplifier modules at W-band are used to drive cascaded chains of multipliers. We have demonstrated performance from chains comprised of four doublers up to 1600 GHz as well as from a x2x3x3 chain to 1900 GHz. Measured peak output power of 23 (micro)W at 1782 GHz and 2.6 (micro)W at 1900 GHz has been achieved when the multipliers are cooled to 120K. The 1900 GHz tripler was pumped with a four anode tripler that produces a peak of 4 mW at 630 GHz when cooled to 120 K. We believe that these sources can now be used to pump hot electron bolometer (HEB) heterodyne mixers.ter (HEB) heterodyne mixers.

local oscillator↗
NASA NTRS2003

Design and Varactors: Operational Considerations. A Reliability Study for Robust Planar GaAs

Preliminary conclusions include: Limits for reverse currents cannot be set. Based on current data we want to avoid any reverse bias current. We know 1 micro-A is too high. Leakage current gets suppressed when operated at 120K. Migration and verification: a) Reverse Bias Voltage will be limited; b) Health check with I/V curve: 1) Minimal reverse voltage shall be x0.75 of the calculated voltage breakdown Vbr; 2) Degradation of the Reverse Bias voltage at given current will be used as indication of ESD incidents or other Damages (high RF power, heat); 3) Calculation of diodes parameter to verify initial health check result in forward direction. RF output power starts to degrade when diode I/V curve is very strongly degraded only. Experienced on 400GHz doubler and 200GHz doubler

THz frequencies↗