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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 775 records · Page 43
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

A time-resolved imaging system for the diagnosis of x-ray self-emission in high energy density physics experiments

A diagnostic capable of recording spatially and temporally resolved x-ray self-emission data was developed to characterize experiments on the MAGPIE pulsed-power generator. The diagnostic used two separate imaging systems: a pinhole imaging system with two-dimensional spatial resolution and a slit imaging system with one-dimensional spatial resolution. The two-dimensional imaging system imaged light onto the image plate. The one-dimensional imaging system imaged light onto the same piece of image plate and a linear array of silicon photodiodes. This design allowed the cross-comparison of different images, allowing a picture of the spatial and temporal distribution of x-ray self-emission to be established. The design was tested in a series of pulsed-power-driven magnetic-reconnection experiments.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2022

Exploring leakage in dielectric films via automated experiments in scanning probe microscopy

Here electronic conduction pathways in dielectric thin films are explored using automated experiments in scanning probe microscopy (SPM). In this study, we use large field of view scanning to identify the position of localized conductive spots and develop an SPM workflow to probe their dynamic behavior at higher spatial resolution as a function of time, voltage, and scanning process in an automated fashion. Using this approach, we observe the variable behaviors of the conductive spots in a 20-nm-thick ferroelectric Hf 0.54 Zr 0.48 O 2 film, where conductive spots disappear and reappear during continuous scanning. There are also fresh conductive spots that develop during scanning. The automated workflow is universal and can be integrated into a wide range of microscopy techniques, including SPM, electron microscopy, optical microscopy, and chemical imaging.

36 MATERIALS SCIENCE↗
DOE OSTI2022

In situ detection of RF breakdown on microfabricated surface ion traps

We report microfabricated surface ion traps are a principal component of many ion-based quantum information science platforms. The operational parameters of these devices are pushed to the edge of their physical capabilities as the experiments strive for increasing performance. When the applied radio-frequency (RF) voltage is increased excessively, the devices can experience damaging electric discharge events known as RF breakdown. We introduce two novel techniques for in situ detection of RF breakdown, which we implemented while characterizing the breakdown threshold of surface ion traps produced at Sandia National Laboratories. In these traps, breakdown did not always occur immediately after increasing the RF voltage, but often minutes or even hours later. This result is surprising in the context of the suggested mechanisms for RF breakdown in vacuum. Additionally, the extent of visible damage caused by breakdown events increased with the applied voltage. To minimize the probability for damage when RF power is first applied to a device, our results strongly suggest that the voltage should be ramped up over the course of several hours and monitored for breakdown.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2022

What is in a name: Defining “high entropy” oxides

High entropy oxides are emerging as an exciting new avenue to design highly tailored functional behaviors that have no traditional counterparts. Study and application of these materials are bringing together scientists and engineers from physics, chemistry, and materials science. The diversity of each of these disciplines comes with perspectives and jargon that may be confusing to those outside of the individual fields, which can result in miscommunication of important aspects of research. In this Perspective, we provide examples of research and characterization taken from these different fields to provide a framework for classifying the differences between compositionally complex oxides, high entropy oxides, and entropy stabilized oxides, which is intended to bring a common language to this emerging area. We highlight the critical importance of understanding a material’s crystallinity, composition, and mixing length scales in determining its true definition.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Using small angle x-ray scattering to examine the aggregation mechanism in silica nanoparticle-based ambigels for improved optical clarity

Silica-based aerogels are a promising low-cost solution for improving the insulation efficiency of single-pane windows and reducing the energy consumption required for space heating and cooling. Two key material properties required are high porosity and small pore sizes, which lead to low thermal conductivity and high optical transparency, respectively. However, porosity and pore size are generally directly linked, where high porosity materials also have large pore sizes. This is unfavorable as large pores scatter light, resulting in reduced transmittance in the visible regime. In this work, we utilized preformed silica colloids to explore methods for reducing pore size while maintaining high porosity. Further, the use of preformed colloids allows us to isolate the effect of solution conditions on porous gel network formation by eliminating simultaneous nanoparticle growth and aggregation found when using typical sol–gel molecular-based silica precursors. Specifically, we used in situ synchrotron-based small-angle x-ray scattering during gel formation to better understand how pH, concentration, and colloid size affect particle aggregation and pore structure. Ex situ characterization of dried gels demonstrates that peak pore widths can be reduced from 15 to 13 nm, accompanied by a narrowing of the overall pore size distribution, while maintaining porosities of 70%–80%. Optical transparency is found to increase with decreasing pore sizes while low thermal conductivities ranging from 95 +/− 13 mW/m K are maintained. Mechanical performance was found to depend primarily on effective density and did not show a significant dependence on solution conditions. Overall, our results provide insights into methods to preserve high porosity in nanoparticle-based aerogels while improving optical transparency.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

Atomic-scale in situ observation of electron beam and heat induced crystallization of Ge nanoparticles and transformation of Ag@Ge core-shell nanocrystals

Crystallization of amorphous materials by thermal annealing has been investigated for numerous applications in the fields of nanotechnology, such as thin-film transistors and thermoelectric devices. The phase transition and shape evolution of amorphous germanium (Ge) and Ag@Ge core–shell nanoparticles with average diameters of 10 and 12 nm, respectively, were investigated by high-energy electron beam irradiation and in situ heating within a transmission electron microscope. The transition of a single Ge amorphous nanoparticle to the crystalline diamond cubic structure at the atomic scale was clearly demonstrated. Depending on the heating temperature, a hollow Ge structure can be maintained or transformed into a solid Ge nanocrystal through a diffusive process during the amorphous to crystalline phase transition. Selected area diffraction patterns were obtained to confirm the crystallization process. In addition, the thermal stability of Ag@Ge core–shell nanoparticles with an average core of 7.4 and a 2.1 nm Ge shell was studied by applying the same beam conditions and temperatures. The results show that at a moderate temperature (e.g., 385 °C), the amorphous Ge shell can completely crystallize while maintaining the well-defined core–shell structure, while at a high temperature (e.g., 545 °C), the high thermal energy enables a freely diffusive process of both Ag and Ge atoms on the carbon support film and leads to transformation into a phase segregated Ag–Ge Janus nanoparticle with a clear interface between the Ag and Ge domains. In conclusion, this study provides a protocol as well as insight into the thermal stability and strain relief mechanism of complex nanostructures at the single nanoparticle level with atomic resolution.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Influence of doping and thickness on domain avalanches in lead zirconate titanate thin films

In undoped lead zirconate titanate films of 1–2 μm thick, domain walls move in clusters with a correlation length of approximately 0.5–2 μm. Band excitation piezoresponse force microscopy mapping of the piezoelectric nonlinearity revealed that niobium (Nb) doping increases the average concentration or mobility of domain walls without changing the cluster area of correlated domain wall motion. In comparison, manganese (Mn) doping reduces the contribution of mobile domain walls to the dielectric and piezoelectric responses without changing the cluster area for correlated motion. In both Nb and Mn doped films, the cluster area increases and the cluster density drops as the film thickness increases from 250 to 1250 nm. This is evident in spatial maps generated from the analysis of irreversible to reversible ratios of the Rayleigh coefficients.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Exceptional high temperature retention in Al 0.93 B 0.07 N films

This paper reports the retention behavior for Al 0.93 B 0.07 N thin films, a member of the novel family of wurtzite ferroelectrics. Our experiments suggest that bipolar cycling of metal (Pt/W)/Al 0.93 B 0.07 N/W/Al 2 O 3 film stacks first induced wake-up and then a region of constant switchable polarization. Here, the films showed excellent retention of the stored polarization state. As expected, data retention was slightly inferior in the opposite state (OS) measurements. However, it is noted that even after 3.6 × 10 6 s (1000 h) at 200 °C, the OS signal margin still exceeded 200 μC/cm 2 . The predicted OS retention is 82% after 10 yr baking at 200 °C.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Wake up and retention in zinc magnesium oxide ferroelectric films

Zn 0.64 Mg 0.36 O (ZMO) is a newly discovered ferroelectric oxide with the wurtzite structure. Epitaxial Zn 0.64 Mg 0.36 O films from 0.036 to 0.5 μm in thickness are grown on Pt/sapphire with the crystallographic c-axis out of plane. At room temperature, the remanent polarization is ~80 μC/cm 2 and the coercive field is ~3 MV/cm. The coercive field is strongly temperature dependent up to 240 °C with a pseudo-activation energy of 23 ± 0.3 meV, suggesting that polarization reversal occurs through an extrinsic process such as domain wall motion. ZMO films can be woken up in 20 electric field cycles on driving near the coercive field; they wake up in a single loop at fields in excess of 4 MV/cm. A thermally activated fluid imprint process, with a pseudo-activation energy of 67 ± 8 meV, enlarges the coercive field by several hundred kV cm –1 after switching the polarization. Additionally, ZMO films exhibit excellent retention characteristics; no reduction in the polarization is observed up to 1000 h from room temperature to 200 °C bakes. Here, this current early generation of ZMO films can survive several thousand switching cycles before dielectric breakdown occurs.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Twinning microstructure in the solid-phase epitaxial crystallization of BaTiO 3

Amorphous BaTiO 3 layers deposited on SrTiO 3 (001) substrates at room temperature were subsequently crystallized using solid phase epitaxy (SPE). Heating an initially amorphous BaTiO 3 layer in air at 650 °C for 3 h resulted in crystallization with components in two distinct crystallographic orientation relationships with respect to the substrate. Part of the volume of the BaTiO 3 layer crystallized in a cube-on-cube relationship with the substrate. Other volumes crystallized in four variants of a 70.5° rotation about $\langle$110$\rangle$, resulting in a $\langle$221$\rangle$ surface normal in each case. Each of these four variants forms a Σ = 3 coincident site lattice with respect to the SrTiO 3 substrate and the cube-on-cube oriented BaTiO 3 . Heating for the same duration and temperature in a reducing gas atmosphere resulted in the formation of polycrystalline BaTiO 3 with no preferred crystallographic orientation. The dependence on the gas atmosphere indicates that it may be possible to tune the annealing time, temperature, and atmosphere to produce a single crystalline BTO on STO by SPE or produce a desired distribution of orientations.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Applied in-plane strain effects on the polarization response of ferroelectric hafnium zirconium oxide thin films

The influence of biaxial stress on the maximum and remanent polarizations of 10 nm thick hafnium zirconium oxide thin films in metal–ferroelectric–metal capacitor structures has been quantified. In the as-prepared state with a nominal biaxial tensile strain of 0.20% and no applied extrinsic stress, remanent and maximum polarizations of 7.6 and 13.1 μC/cm 2 , respectively, were measured using a 2 MV/cm applied electric field. Reducing the intrinsic strain by 0.111% through the application of a compressive uniaxial stress results in a decrease in the remanent and maximum polarizations to 6.8 and 12.2 μC/cm 2 , respectively. Here, the polarization dependence on strain is nearly linear between these values. The observed variation in polarization with strain is consistent with strain impacting ferroelastic switching whereby in-plane tension increases the fraction of the short polar axis orienting out-of-plane, hence increasing out-of-plane polarization. In contrast, reducing the in-plane strain through compression results in an increase in the fraction of the long non-polar axis orienting out-of-plane, thereby decreasing out-of-plane polarization.

36 MATERIALS SCIENCE↗
DOE OSTI2023

High field dielectric response in κ-Ga 2 O 3 films

κ-Ga 2 O 3 has been predicted to be a potential ferroelectric material. In this work, undoped Ga 2 O 3 films were grown by either plasma-enhanced atomic layer deposition (PEALD) or metal organic chemical vapor deposition (MOCVD) on platinized sapphire substrates. 50 nm thick PEALD films with a mixture of κ-Ga 2 O 3 and β-Ga 2 O 3 had a relative permittivity of ~27, a loss tangent below 2%, and high electrical resistivity up to ~1.5 MV/cm. 700 nm thick MOCVD films with predominantly the κ-Ga 2 O 3 phase had relative permittivities of ~18 and a loss tangent of 1% at 10 kHz. Neither film showed compelling evidence for ferroelectricity measured at fields up to 1.5 MV/cm, even after hundreds of cycles. Here, piezoresponse force microscopy measurements on bare κ-Ga 2 O 3 showed a finite piezoelectric response that could not be reoriented for electric fields up to 1.33 MV/cm.

36 MATERIALS SCIENCE↗
DOE OSTI2024

First-order crosstalk mitigation in parallel quantum gates driven with multi-photon transitions

Here, we demonstrate an order of magnitude reduction in the sensitivity to optical crosstalk for neighboring trapped-ion qubits during simultaneous single-qubit gates driven with individual addressing beams. Gates are implemented via two-photon Raman transitions, where crosstalk is mitigated by offsetting the drive frequencies for each qubit to avoid first-order crosstalk effects from inter-beam two-photon resonance. The technique is simple to implement, and we find that phase-dependent crosstalk due to optical interference is reduced on the most impacted neighbor from a maximal fractional rotation error of 0.185(4) without crosstalk mitigation to ≤0.006 with the mitigation strategy. Furthermore, we characterize first-order crosstalk in the two-qubit gate and avoid the resulting rotation errors for the arbitrary-axis Mølmer–Sørensen gate via a phase-agnostic composite gate. Finally, we demonstrate holistic system performance by constructing a composite CNOT gate using the improved single-qubit gates and phase-agnostic two-qubit gate. This work is done on the Quantum Scientific Computing Open User Testbed; however, our methods are widely applicable for individual addressing Raman gates and impose no significant overhead, enabling immediate improvement for quantum processors that incorporate this technique.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2024

Open hardware solutions in quantum technology

Quantum technologies, such as communication, computing, and sensing, offer vast opportunities for advanced research and development. While an open-source ethos currently exists within some quantum technologies, especially in quantum computer programming, we argue that there are additional advantages in developing open quantum hardware (OQH). Open quantum hardware encompasses open-source software for the control of quantum devices in labs, blueprints, and open-source toolkits for chip design and other hardware components, as well as openly accessible testbeds and facilities that allow cloud-access to a wider scientific community. We provide an overview of current projects in the OQH ecosystem, identify gaps, and make recommendations on how to close them at present. More open quantum hardware would accelerate technology transfer to and growth of the quantum industry and increase accessibility in science.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2024

Perspectives and progress on wurtzite ferroelectrics: Synthesis, characterization, theory, and device applications

Wurtzite ferroelectrics are an emerging material class that expands the functionality and application space of wide bandgap semiconductors. Promising physical properties of binary wurtzite semiconductors include a large, reorientable spontaneous polarization, direct band gaps that span from the infrared to ultraviolet, large thermal conductivities and acoustic wave velocities, high mobility electron and hole channels, and low optical losses. The ability to reverse the polarization in ternary wurtzite semiconductors at room temperature enables memory and analog type functionality and quasi-phase matching in optical devices and boosts the ecosystem of wurtzite semiconductors, provided the appropriate combination of properties can be achieved for any given application. In this article, advances in the design, synthesis, and characterization of wurtzite ferroelectric materials and devices are discussed. Highlights include: the direct and quantitative observation of polarization reversal of ~135 μC/cm 2 charge in Al 1-x B x N via electron microscopy, Al 1-x B x N ferroelectric domain patterns poled down to 400 nm in width via scanning probe microscopy, and full polarization retention after over 1000 h of 200 °C baking and a 2× enhancement relative to ZnO in the nonlinear optical response of Zn 1-x Mg x O. In conclusion, the main tradeoffs, challenges, and opportunities in thin film deposition, heterostructure design and characterization, and device fabrication are overviewed.

30 DIRECT ENERGY CONVERSION↗
DOE OSTI2024

Ferroelectric Al1 − xBxN–GaN heterostructures

This report demonstrates Al0.93B0.7N thin films grown epitaxially on n-type GaN (0002)/c-plane sapphire substrates by reactive magnetron sputtering at 300 °C. At 200 nm film thickness, the Al0.93B0.07N layers exhibit partially relaxed substrate-induced epitaxial strain, a 0.16° wide (0002) rocking curve, in-plane crystallographic registry, and sub-nanometer surface roughness. Electrically, the stack shows robust hysteresis over three frequency decades, a remanent polarization of ∼125 μC/cm2, a strongly frequency dependent coercive field, highly uniform dc leakage currents, and endurance >106 field cycles. This report validates possibilities for ferroelectric nitride integration into conventional III-nitride heterostructures with high crystalline fidelity, high electrical resistivity, and persistent hysteresis. Such materials are synthesizable at thermal budgets and temperatures compatible with back-end-of-the-line boundary conditions.

Physics↗
DOE OSTI2024

Hybrid programming-model strategies for GPU offloading of electronic structure calculation kernels

To address the challenge of performance portability and facilitate the implementation of electronic structure solvers, we developed the basic matrix library (BML) and Parallel, Rapid O(N), and Graph-based Recursive Electronic Structure Solver (PROGRESS) library. The BML implements linear algebra operations necessary for electronic structure kernels using a unified user interface for various matrix formats (dense and sparse) and architectures (CPUs and GPUs). Focusing on density functional theory and tight-binding models, PROGRESS implements several solvers for computing the single-particle density matrix and relies on BML. In this paper, we describe the general strategies used for these implementations on various computer architectures, using OpenMP target functionalities on GPUs, in conjunction with third-party libraries to handle performance critical numerical kernels. In this study, we demonstrate the portability of this approach and its performance in benchmark problems.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Integration of scanning probe microscope with high-performance computing: Fixed-policy and reward-driven workflows implementation

The rapid development of computation power and machine learning algorithms has paved the way for automating scientific discovery with a scanning probe microscope (SPM). The key elements toward operationalization of the automated SPM are the interface to enable SPM control from Python codes, availability of high computing power, and development of workflows for scientific discovery. Here, we build a Python interface library that enables controlling an SPM from either a local computer or a remote high-performance computer, which satisfies the high computation power need of machine learning algorithms in autonomous workflows. We further introduce a general platform to abstract the operations of SPM in scientific discovery into fixed-policy or reward-driven workflows. Furthermore, our work provides a full infrastructure to build automated SPM workflows for both routine operations and autonomous scientific discovery with machine learning.

47 OTHER INSTRUMENTATION↗