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At least 775 records · Page 43

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DOE OSTI2024

Enhanced power density in zero-vacuum-gap thermophotovoltaic devices

Thermophotovoltaic (TPV) devices, which convert infrared thermal radiation from a hot emitter into electricity, hold great promise for applications in energy storage and waste heat recovery. While recent advancements have developed TPV devices with high efficiency, much less attention has been focused on improving the power density. Current TPV methods face challenges in significantly boosting the power density using emitters at very high temperatures (>2000 °C) or using complex, costly architectures such as near-field TPV. Here, we present the first experimental demonstration of a novel far-field TPV concept called “zero-vacuum-gap TPV” that eliminates the vacuum or gas-filled gap in conventional designs. By incorporating a high-index, infrared-transparent, and thermally insulating fused quartz spacer, we achieved a two-fold increase in power density compared to the far-field counterpart under identical conditions. Notably, in our experiment, the zero-vacuum-gap far-field design transforms a less-optimized, low-power-density far-field device into one with one of the highest power densities reported at moderate temperatures (700–1100 °C). Moreover, our measurements using a graphite emitter surpass the blackbody limit for gap-integrated far-field devices and match the performance of near-field TPV devices with an ultrathin 200-nm gap. Our findings suggest that zero-vacuum-gap TPV offers potential for cost-effective, scalable manufacturing using current technologies. Additionally, our modelling predicts that further power enhancements over one order of magnitude are possible with other spacer materials.

14 SOLAR ENERGY↗

NASA NTRS2018

Cryogenic Parametric Characterization of Gallium Nitride Switches

This report presents the parametric characterization results of four GaN field-effect transistor (FET) devices from three manufacturers, one of which is a cascode device, and compares those results to a Si power metal-oxide-semiconductor fieldeffect transistor (MOSFET) and a SiC power MOSFET. The devices were first characterized at ambient temperature, then at cryogenic temperatures down to -196 C (LN2 temperature), and finally at ambient temperature again in the event that the device parameters were permanently affected by the cryogenic temperatures. In general, the results indicate that the GaN devices show significant improvement overall at cryogenic temperatures in the parameters characterized, such as onresistance and leakage currents, compared to the Si and SiC devices. The results show that the SiC device tested should not be used at cryogenic temperatures due to the significant increase in on-resistance. The results also show that the GaN and Si parameters characterized were either not affected by the cryogenic temperatures or changed by no more than +/-20 percent post LN2 submersion. The device that exhibited the most parametric change post LN2 submersion was the SiC power MOSFET in its leakage currents.

Gonzalez, Marcelo C.↗

DOE OSTI2021

Renewable energy integration and system operation challenge: control and optimization of millions of devices

The electric power infrastructure, originally designed and built on large-scale power plants, is evolving into a more resilient power generation and delivery system in which millions of smaller units of distributed energy generation resources units will be installed in sub-transmission and distribution networks. In order to control, manage and optimize the future grid, a hierarchical design is presented in this chapter which enables the distributed control on grid edge while inheriting the existing centralized control structure. This layered design of large-scale power system operation and control uses the following principle: reactive power control is treated as a primary control for voltage stability, and the real power control is primarily a grid-level control but can also be a supplementary control for voltage support in the case of insufficient reactive power control capacity. For the purpose of active control and operation at the distribution level, a recursive power network model is derived from nodal injection and branch power flow models. Based on the model, the proposed algorithms of hierarchical control, grid-edge inference and dynamic hosting allowance are developed and presented for multi-level controlled operation. And, a co-simulation architecture of integrated T&D system is presented to validate and demonstrate the feasibility and scalability of proposed algorithms.

Xu, Ying↗

NASA NTRS2010

Kennedy Space Center's Partnership with Graftel Incorporated

NASA Kennedy Space Center (KSC) has recently partnered with Graftel Incorporated under an exclusive license agreement for the manufacture and sale of the Smart Current Signature Sensor. The Smart Current Signature Sensor and software were designed and developed to be utilized on any application using solenoid valves. The system monitors the electrical and mechanical health of solenoids by comparing the electrical current profile of each solenoid actuation to a typical current profile and reporting deviation from its learned behavior. The objective of this partnership with Graftel is for them to develop the technology into a hand-held testing device for their customer base in the Nuclear Power Industry. The device will be used to perform diagnostic testing on electromechanical valves used in Nuclear Power plants. Initially, Graftel plans to have working units within the first year of license in order to show customers and allow them to put purchase requests into their next year's budget. The subject technology under discussion was commercialized by the Kennedy Space Center Technology Programs and Partnerships Office, which patented the technology and licensed it to Graftel, Inc., a company providing support, instrumentation, and calibration services to the nuclear community and private sector for over 10 years. For the nuclear power industry, Graftel designs, manufacturers, and calibrates a full line of testing instrumentation. Grafters smart sensors have been in use in the United States since 1993 and have proved to decrease set-up time and test durations. The project was funded by Non-Destructive Engineering, and it is felt that this technology will have more emphasis on future vehicles. Graftel plans to market the Current Signature Sensor to the Electric Utility industry. Graftel currently supplies product and services to the Nuclear Power Industry in the United States as well as internationally. Product and services sold are used in non-destructive testing for valves, penetrations and other applications. Graftel also supplies testing services to an industrial customer base. The customer base includes 90 percent of the U.S. Nuclear plants and plants in Brazil, Europe, and Asia. Graftel works internationally with two representative groups and employees and has ten people at the principle location and a group of contract engineers around the country.

Dunn, Carol Anne↗

DOE OSTI2020

Thermal Assessment and In-Situ Monitoring of Insulated Gate Bipolar Transistors in Power Electronic Modules: Preprint

Insulated gate bipolar transistor (IGBT) power modules are devices commonly used for switching of high voltages and currents. Usage and environmental conditions can cause these power modules to degrade over time, and this gradual process may eventually lead to catastrophic failure of the device. This degradation process may cause some early performance symptoms related to the state of health of the power module, making it possible to detect reliability degradation of the IGBT module. Testing can be used to accelerate this process, permitting a rapid determination of whether specific declines in device reliability can be characterized. In this study, thermal cycling was conducted on multiple power modules simultaneously in order to assess the effect of thermal cycling on the degradation of the power module. In-situ monitoring of temperature was performed from inside each power module using high temperature thermocouples. Device imaging and characterization was performed along with temperature data analysis, to assess failure modes and mechanisms within the power modules. While the experiment was aimed to assess the potential damage effects of thermal cycling on die attach, results indicated that wirebond degradation was the life limiting failure mechanism.

33 ADVANCED PROPULSION SYSTEMS↗

NASA NTRS2012

Radiation-Hard SpaceWire/Gigabit Ethernet-Compatible Transponder

A radiation-hard transponder was developed utilizing submicron/nanotechnology from IBM. The device consumes low power and has a low fabrication cost. This device utilizes a Plug-and-Play concept, and can be integrated into intra-satellite networks, supporting SpaceWire and Gigabit Ethernet I/O. A space-qualified, 100-pin package also was developed, allowing space-qualified (class K) transponders to be delivered within a six-month time frame. The novel, optical, radiation-tolerant transponder was implemented as a standalone board, containing the transponder ASIC (application specific integrated circuit) and optical module, with an FPGA (field-programmable gate array) friendly parallel interface. It features improved radiation tolerance; high-data-rate, low-power consumption; and advanced functionality. The transponder utilizes a patented current mode logic library of radiation-hardened-by-architecture cells. The transponder was developed, fabricated, and radhard tested up to 1 MRad. It was fabricated using 90-nm CMOS (complementary metal oxide semiconductor) 9 SF process from IBM, and incorporates full BIT circuitry, allowing a loop back test. The low-speed parallel LVCMOS (lowvoltage complementary metal oxide semiconductor) bus is compatible with Actel FPGA. The output LVDS (low-voltage differential signaling) interface operates up to 1.5 Gb/s. Built-in CDR (clock-data recovery) circuitry provides robust synchronization and incorporates two alarm signals such as synch loss and signal loss. The ultra-linear peak detector scheme allows on-line control of the amplitude of the input signal. Power consumption is less than 300 mW. The developed transponder with a 1.25 Gb/s serial data rate incorporates a 10-to-1 serializer with an internal clock multiplication unit and a 10-1 deserializer with internal clock and data recovery block, which can operate with 8B10B encoded signals. Three loop-back test modes are provided to facilitate the built-in-test functionality. The design is based on a proprietary library of differential current switching logic cells implemented in the standard 90-nm CMOS 9SF technology from IBM. The proprietary low-power LVDS physical interface is fully compatible with the SpaceWire standard, and can be directly connected to the SFP MSA (small form factor pluggable Multiple Source Agreement) optical transponder. The low-speed parallel interfaces are fully compatible with the standard 1.8 V CMOS input/output devices. The utilized proprietary annular CMOS layout structures provide TID tolerance above 1.2 MRad. The complete chip consumes less than 150 mW of power from a single 1.8-V positive supply source.

Katzman, Vladimir↗

NASA NTRS1971

Thermal excursion can cause bond problems.

The purpose of this paper is to illustrate the failure mode caused by thermal deformation and how thermal deformation affects bond integrity. Wege bonding in small-signal transistors, microcircuits and LSI circuits is the subject of this work. Repeated switching of the devices between high and low power at a rate that allows thermal expansion and contraction in the interconnecting wire causes the wire to flex at the point of reduced cross-sectional area until finally the wire breaks due to metal fatigue. It was observed that the thermal deformation was related to many factors such as device power dissipation, current density in the wire, wi *e dress and length, thermal time constant and frequency of operation.

Nowakowski, M. F.↗

NASA NTRS1978

Electrets used to measure exhaust cloud effluents from Solid Rocket Motor (SRM) during demonstration model (DM-2) static test firing

Electrets were compared with fixed flow samplers during static test firing. The measurement of the rocket exhaust effluents by samplers and electrets indicated that the Solid Rocket Motor had no significant effect on the air quality in the area sampled. The results show that the electrets (a passive device which needs no power) can be used effectively alongside existing measuring devices (which need power). By placing electrets in areas where no power is available, measurements may be obtained. Consequently, it is a valuable complementary instrument in measuring rocket exhaust effluents in areas where other measuring devices may not be able to assess the contaminants.

Susko, M.↗

DOE OSTI2021

Ion heating in the PISCES-RF liquid-cooled high-power, steady-state, helicon plasma device

Radio frequency (RF) driven helicon plasma sources are commonly used for their ability to produce high-density argon plasmas ( n > 10 19 m -3 ) at relatively moderate powers (typical RF power < 2 kW). Typical electron temperatures are <10 eV and typical ion temperatures are <0.6 eV. A newly designed helicon antenna assembly (with concentric, double-layered, fully liquid-cooled RF-transparent windows) operates in steady-state at RF powers up to 10 kW. We report on the dependence of argon plasma density, electron temperature and ion temperature on RF power. At 10 kW, ion temperatures >2 eV in argon plasmas are measured with laser induced fluorescence, which is consistent with a simple volume averaged 0D power balance model. 1D Monte Carlo simulations of the neutral density profile for these plasma conditions show strong neutral depletion near the core and predict neutral temperatures well above room temperatures. The plasmas created in this high-power helicon source (when light ions are employed) are ideally suited for fusion divertor plasma-material interaction studies and negative ion production for neutral beams.

Physics↗

DOE OSTI2021

Giant field-like torque by the out-of-plane magnetic spin Hall effect in a topological antiferromagnet

Abstract Spin-orbit torques (SOT) enable efficient electrical control of the magnetic state of ferromagnets, ferrimagnets and antiferromagnets. However, the conventional SOT has severe limitation that only in-plane spins accumulate near the surface, whether interpreted as a spin Hall effect (SHE) or as an Edelstein effect. Such a SOT is not suitable for controlling perpendicular magnetization, which would be more beneficial for realizing low-power-consumption memory devices. Here we report the observation of a giant magnetic-field-like SOT in a topological antiferromagnet Mn 3 Sn, whose direction and size can be tuned by changing the order parameter direction of the antiferromagnet. To understand the magnetic SHE (MSHE)- and the conventional SHE-induced SOTs on an equal footing, we formulate them as interface spin-electric-field responses and analyzed using a macroscopic symmetry analysis and a complementary microscopic quantum kinetic theory. In this framework, the large out-of-plane spin accumulation due to the MSHE has an inter-band origin and is likely to be caused by the large momentum-dependent spin splitting in Mn 3 Sn. Our work demonstrates the unique potential of antiferromagnetic Weyl semimetals in overcoming the limitations of conventional SOTs and in realizing low-power spintronics devices with new functionalities.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

NASA NTRS1992

Negative Differential Resistance (NDR) frequency conversion with gain

The dependence of the I-V characteristic of the negative differential resistance (NDR) devices on the power level and frequency of the rf input signal has been theoretically analyzed with a modified large- and small-signal nonlinear circuit analysis program. The NDR devices we used in this work include both the tunnel diode (without the antisymmetry in the I-V characteristic) and resonant-tunneling devices (with the antisymmetry in the I-V characteristic). Absolute negative conductance can be found from a zero-biased resonant tunneling device when the applied pump power is within a small range. This study verifies the work of Sollner et al. Variable negative conductances at the fundamental and harmonic frequencies can also be obtained from both the unbiased and biased tunnel diodes. The magnitude of the negative conductances can be adjusted by varying the pump amplitude -- a very useful circuit property. However, the voltage range over which the negative conductance occurs moves towards the more positive side of the voltage axis with increasing frequency. Furthermore, the range of the pumping amplitude to obtain negative conductance varies with the parasitics (resistance and capacitance) of the device. The theoretical observation of the dependence of the I-V characteristic of the NDR devices on the power and frequency of the applied pump signal is supported by the experimental results. In addition, novel functions of a NDR device such as self-oscillating frequency multiplier and mixer with gain have been experimentally demonstrated. The unbiased oscillator have also been successfully realized with a NDR device with an antisymmetrical I-V characteristic. Finally, the applications of these device functions will be discussed.

Hwu, R. J.↗

DOE OSTI2026

Variable Effects of Dispersed Nanoparticles on Triboelectric Nanogenerators

Technology has recently seen a drastic physical downsizing. Wearable and small devices with lower power demands have become the norm and continue to be more prominent in daily life. With modern devices growing smaller and requiring less electricity, a power source will always be needed. Contemporary batteries are the most common means to power small electronics. However, reliance on conventional batteries may prove insufficient due to the non renewable resources (Li, Ni, Co) required to power the growing number of individual devices each person may own. Additionally, the infrastructure required to harvest and recycle the sheer number of batteries produced presents a further logistic issue to be addressed. A promising alternative to batteries is the usage of triboelectric nanogenerators (TENGs). TENGs are a class of energy harvesting devices that utilize triboelectric generation to convert mechanical/kinetic energy into electrical energy and have exhibited efficiencies up to 85 % at low frequencies. TENGs exhibit a high voltage but low current. Even with the high voltage, the low current output proves to be a significant factor preventing undoped TENGs from being commercially viable. This review will investigate factors that increase the total current produced by TENGs when nanoparticles are utilized in TENGs. Factors such as increasing porosity, surface area, surface charge density, charge storage, deep trap formation, and dielectric constant can be altered to affect the total current by impregnating nanoparticles into the polymer material will be explored.

36 MATERIALS SCIENCE↗

DOE OSTI2026

Variable Effects of Dispersed Nanoparticles on Triboelectric Nanogenerators

42 ENGINEERING↗

NASA NTRS1996

Silicon Carbide Epitaxial Films Studied by Atomic Force Microscopy

Silicon carbide (SiC) holds great potential as an electronic material because of its wide band gap energy, high breakdown electric field, thermal stability, and resistance to radiation damage. Possible aerospace applications of high-temperature, high-power, or high-radiation SiC electronic devices include sensors, control electronics, and power electronics that can operate at temperatures up to 600 C and beyond. Commercially available SiC devices now include blue light-emitting diodes (LED's) and high-voltage diodes for operation up to 350 C, with other devices under development. At present, morphological defects in epitaxially grown SiC films limit their use in device applications. Research geared toward reducing the number of structural inhomogeneities can benefit from an understanding of the type and nature of problems that cause defects. The Atomic Force Microscope (AFM) has proven to be a useful tool in characterizing defects present on the surface of SiC epitaxial films. The in-house High-Temperature Integrated Electronics and Sensors (HTIES) Program at the NASA Lewis Research Center not only extended the dopant concentration range achievable in epitaxial SiC films, but it reduced the concentration of some types of defects. Advanced structural characterization using the AFM was warranted to identify the type and structure of the remaining film defects and morphological inhomogeneities. The AFM can give quantitative information on surface topography down to molecular scales. Acquired, in part, in support of the Advanced High Temperature Engine Materials Technology Program (HITEMP), the AFM had been used previously to detect partial fiber debonding in composite material cross sections. Atomic force microscopy examination of epitaxial SiC film surfaces revealed molecular-scale details of some unwanted surface features. Growth pits propagating from defects in the substrate, and hillocks due, presumably, to existing screw dislocations in the substrates, were imaged. Away from local defects, step bunching was observed to yield step heights of hundreds of angstroms, with possible implications for the uniformity of dopants incorporated in SiC devices during fabrication. The quantitative topographic data from the AFM allow the relevant defect information to be extracted, such as the size and distribution of step bunching and the Burgers vector of screw dislocations. These atomic force microscopy results have furthered the understanding of the dynamic epitaxial SiC growth process. A model describing the observed hillock step bunching has been proposed. This cooperation between researchers involved in crystal growth, electronic device fabrication, and surface structural characterization is likely to continue as atomic force microscopy is used to improve SiC films for high-temperature electronic devices for NASA's advanced turbine engines and space power devices, as well as for future applications in the automotive industry.

Source record↗

DOE OSTI2020

Remotely powered line monitor

Improved devices, apparatuses, systems, and methods involving the use of field probes with voltage-controlled variable impedance elements and surface-launched acoustic wave devices, including surface acoustic wave (SAW) devices and SAW sensor-tag wireless interface devices to measure voltage and current in current carrying conductors (CCCs) via measurement of the electric fields and magnetic fields around said CCCs are disclosed. The devices, apparatuses, systems, and methods taught in the present invention include a remotely powered line-mounted measurement unit that requires no connection to electrical ground for operation, and that has no internal energy source, no energy harvesting or power conditioning circuitry, no discrete energy storage components, and no radio. The devices, apparatuses, systems, and methods taught in the present invention also provide for determining the phase (leading or lagging) of the current relative to the voltage in AC power systems, and also provide for measurement of temperature of the conductor.

24 POWER TRANSMISSION AND DISTRIBUTION↗

DOE OSTI2022

Power Electronics Materials and Bonded Interfaces - Reliability and Lifetime

Wide-bandgap devices have pushed the operational limit of semiconductor devices in automotive power electronics packages to higher temperatures (>200 C). While a higher efficiency can be achieved through the use of wide-bandgap devices, the entire package must be re-designed with components that can withstand the higher temperature limits. Sintered silver and transient liquid phase bonds are potential candidates as bonded materials for use in higher temperatures however, the underlying mechanics of deformation under thermal loads and the resulting failure mechanisms in these materials are not well understood. Accelerated experiments conducted at NREL reveal that high-lead solder joints have better reliability than sintered silver under extreme thermal cycling conditions. Furthermore, efforts to develop a crack propagation model for the high-temperature materials are described.

ADVANCED PROPULSION SYSTEMS↗

DOE OSTI2020

Structural breakdown in high power GaN-on-GaN p-n diode devices stressed to failure

The morphology of GaN-on-GaN vertical p-i-n diode devices after reverse-bias electrical stressing to breakdown has been investigated. All failed devices had irreversible structural damage, showing large surface craters that were ∼15–35 μm deep with lengthy surface cracks. Cross-sectional electron micrographs of failed devices showed substantial concentrations of threading dislocations around the cracks and near the crater surfaces. Progressive ion-milling across damaged devices revealed high densities of threading dislocations and the presence of voids beneath the surface cracks; these features were not observed in any unstressed devices. These results should serve as a useful reference for future reliability studies of vertical high-power GaN devices.

Peri, Prudhvi (ORCID:000000022338441X)↗

DOE OSTI2021

Preprocessing for Unintended Conducted Emissions Classification with ResNet

Characterization of Unintended Conducted Emissions (UCE) from electronic devices is important when diagnosing electromagnetic interference, performing nonintrusive load monitoring (NILM) of power systems, and monitoring electronic device health, among other applications. Prior work has demonstrated that UCE analysis can serve as a diagnostic tool for energy efficiency investigations and detailed load analysis. While explaining the feature selection of deep networks with certainty is often not fully comprehensive, or in other applications, quite lacking, additional tools/methods for further corroboration and confirmation can help further the understanding of the researcher. This is true especially in the subject application of the study in this paper. Often the focus of such efforts is the selected features themselves, and there is not as much understanding gained about the noise in the collected data. If selected feature and noise characteristics are known, it can be used to further shape the design of the deep network or associated preprocessing. This is additionally difficult when the available data are limited, as in the case which the authors investigated in this study. Here, the authors present a novel work (which is a proposed complementary portion of the overall solution to the deep network classification explainability problem for this application) by applying a systematic progression of preprocessing and a deep neural network (ResNet architecture) to classify UCE data obtained via current transformers. By using a methodical application of preprocessing techniques prior to a deep classifier, hypotheses can be produced concerning what features the deep network deems important relative to what it perceives as noise. For instance, it is hypothesized in this particular study as a result of execution of the proposed method and periodic inspection of the classifier output that the UCE spectral features are relatively close to each other or to the interferers, as systematically reducing the beta parameter of the Kaiser window produced progressively better classification performance, but only to a point, as going below the Beta of eight produced decreased classifier performance, as well as the hypothesis that further spectral feature resolution was not as important to the classifier as rejection of the leakage from a spectrally distant interference. This can be very important in unpredictable low-FNR applications, where knowing the difference between features and noise is difficult. As a side-benefit, much was learned regarding the best preprocessing to use with the selected deep network for the UCE collected from these low power consumer devices obtained via current transformers. Baseline rectangular windowed FFT preprocessing provided a 62% classification increase versus using raw samples. After performing a more optimal preprocessing, more than 90% classification accuracy was achieved across 18 low-power consumer devices for scenarios in which the in-band features-to-noise ratio (FNR) was very poor.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗