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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 775 records · Page 43
All sourcesNASA NTRSDOE OSTI
NASA NTRS1976

Analysis of epitaxial drift field N on P silicon solar cells

The performance of epitaxial drift field silicon solar cell structures having a variety of impurity profiles was calculated. These structures consist of a uniformly doped P-type substrate layer, and a P-type epitaxial drift field layer with a variety of field strengths. Several N-layer structures were modeled. A four layer solar cell model was used to calculate efficiency, open circuit voltage and short circuit current. The effect on performance of layer thickness, doping level, and diffusion length was determined. The results show that peak initial efficiency of 18.1% occurs for a drift field thickness of about 30 micron with the doping rising from 10 to the 17th power atoms/cu cm at the edge of the depletion region to 10 to the 18th power atoms/cu cm in the substrate. Stronger drift fields (narrow field regions) allowed very high performance (17% efficiency) even after irradiation to 3x10 to the 14th power 1 MeV electrons/sq cm.

Baraona, C. R.↗
NASA NTRS1976

The O(3P) and N(4S) density measurement at 225 km by ultraviolet absorption and fluorescence in the Apollo-Soyuz test project

The densities of O(3P) and N(4S) at 225 km were determined during the Apollo Soyuz Test Project by a resonance absorption/fluorescence technique in which OI and NI line radiation produced and collimated on board the Apollo was reflected from the Soyuz back to the Apollo for spectral analysis. The two spacecraft maneuvered so that a range of observation angles of plus or minus 15 deg with respect to the normal to the orbital velocity vector was scanned. The measurements were made at night on two consecutive orbits at spacecraft separations of 150 and 500 m. The resulting relative counting rates as function of observation angle were compared to calculated values to determine the oxygen value. This value agrees with mass spectrometric measurements made under similar conditions. The nitrogen value is in good agreement with other measurements and suggests a smaller diurnal variation than is predicted by present models.

Kaufman, F.↗
NASA NTRS1976

Studies of silicon p-n junction solar cells

Single crystal silicon p-n junction solar cells made with low resistivity substrates show poorer solar energy conversion efficiency than traditional theory predicts. The physical mechanisms responsible for this discrepancy are identified and characterized. The open circuit voltage in shallow junction cells of about 0.1 ohm/cm substrate resistivity is investigated under AMO (one sun) conditions.

Lindholm, F. A.↗
NASA NTRS1977

Spectrographic observations of comet West /1975 n/

The spectrum of comet West (1975 n) was recorded on March 7 and 11, 1976, in the wavelength interval from 5700 to 8200 A at an intermediate resolution. One hundred twenty-two emission lines are reported, with 78 lines having identifications with spectral features of NH2, H2O(+), C2, O I forbidden emission, and Na I.

Gary, G. A.↗
NASA NTRS1977

Extended soot limits for rich n-heptane/air flames

A rich n-heptane/air mixture was burned in a flat flame burner in an inert environment, and the soot limits of stable one-stage flames were measured. With a small thin metal plate placed on the flame to suppress soot-containing cusps on the flamelets, the richest soot-free flame burned was with a mixture for which the equivalence ratio was 2.25. Hydrogen yield was, however, low. Extremely rich soot-free two-stage flames could be obtained, but they were unstable.

Ryason, P. R.↗
NASA NTRS1977

Measurement of material parameters that limit the open-circuit voltage in P-N-junction silicon solar cells

The greatest gains in solar energy conversion efficiency of p-n-junction silicon solar cells come from increasing the open-circuit voltage V sub OC; it is important to understand and characterize the material parameters that limit the V sub OC. Strong experimental evidence exists to support the assertion that either an anomalously large minority carrier charge storage or an anomalously small minority carrier lifetime in the quasi-neutral emitter region limits the open circuit voltage. A method is presented for measuring charge storage and effective lifetime. Static and transient measurements are analyzed using physical models of the solar cell characteristics. This analysis yields the emitter charge storage and life-time, which then can be related to the various physical mechanisms, such as energy band gap shrinkage, that have been proposed earlier as responsible for limiting V sub OC.

Lindholm, F. A.↗
NASA NTRS1977

The indirect binary n-cube array

The array is built from a large number (hundreds or thousands) of microprocessors or microcomputers linked through a switching network into an indirect binary n-cube array. Control is two level, the array operating synchronously, or in lock step, at the higher level, and with the broadcast commands being locally interpreted into rewritable microinstruction streams in the microprocessors and in the switch control units. The key to the design is the switching array. By properly programming it, the array can be made into a wide variety of virtual arrays which are well adapted to a wide range of applications. It is believed that the flexibility of the switching array can be used to obtain fault avoidance, which appears necessary in any highly parallel design.

Pease, M. C.↗
NASA NTRS1978

Polymeric foams from cross-linkable poly-N-ary lenebenzimidazoles

Foamed cross-linked poly-N-arylenebinzimidazoles are prepared by mixing an organic tetraamine and an ortho substituted aromatic dicarboxylic acid anhydride in the presence of a blowing agent, and then heating the prepolymer to a temperature sufficient to complete polymerization and foaming of the reactants. In another embodiment of the process, the reactants are heated to form a prepolymer. The prepolymer is then cured at higher temperatures to complete foaming and polymerization.

Harrison, E. S.↗
NASA NTRS1977

Nondestructive determination of the depth of planar p-n junctions by scanning electron microscopy

A method was developed for measuring nondestructively the depth of planar p-n junctions in simple devices as well as in integrated-circuit structures with the electron-beam induced current (EBIC) by scanning parallel to the junction in a scanning electron microscope (SEM). The results were found to be in good agreement with those obtained by the commonly used destructive method of lapping at an angle to the junction and staining to reveal the junction.

Chi, J.-Y.↗
NASA NTRS1978

The origin and relative abundances of C, N and the noble gases on the terrestrial planets and in meteorites

Relative concentrations of noble gases and C and N are evaluated for the terrestrial planets. Comparisons between amounts of volatile materials in carbonaceous chondrites and on Earth and Mars are presented as support for the accretion model of planetary formation. However, attention is given to the large differences in the C/noble gas ratios on various bodies in the solar system, e.g. the Sun, Venus, Earth, Mars, stressing that the data are too incomplete to provide a reliable model for the sources of volatile and noble elements on the terrestrial planets.

Bogard, D. D.↗
NASA NTRS1978

Luminosity and carbon enhancement in N-type carbon stars

Recent observational data indicate the likelihood of a relation between luminosity and carbon enhancement in N-type irregularly variable carbon stars in the sense that the more luminous carbon stars appear to have smaller enhancements of carbon. No relation appears between carbon enhancement and red colors. The observational data are the luminosities of Peery (1975), the colors and CN band indices of Baumert (1972), the CO indices of Fay and Ridgway (1976), and the C2 indices of Gow (1977).

Johnson, H. R.↗
NASA NTRS1978

Ionization equilibrium and radiative energy loss rates for C, N, and O ions in low-density plasmas

The results of calculations of the ionization equilibrium and radiative energy loss rates for C, N and O ions in low-density plasmas are presented for electron temperatures in the range 10,000-10,000,000 K. The ionization structure is determined by using the steady-state corona model, in which electron impact ionization from the ground states is balanced by direct radiative and dielectronic recombination. With an improved theory, detailed calculations are carried out for the dielectronic recombination rates in which account is taken of all radiative and autoionization processes involving a single-electron electric-dipole transition of the recombining ion. The radiative energy loss processes considered are electron-impact excitation of resonance line emission, direct radiative recombination, dielectronic recombination, and electron-ion bremsstrahlung. For all three elements, resonance line emission resulting from 2s-2p transitions produces a broad maximum in the energy loss rate near 100,000 K.

Jacobs, V. L.↗
NASA NTRS1978

Winds from the Atlanta /34 deg N, 84 deg W/ radio meteor wind facility

A brief description of the Georgia Tech radio meteor wind facility is followed by a tabular presentation and discussion of winds measured over Atlanta (34 deg N, 84 deg W) for the first three intervals of the URSI/IAGA Cooperative Tidal Observations Program (CTOP). The pervailing zonal wind measured during August 1974, being easterly, is significantly different from that measured during October 1975 and January 1976, and is not typical of winds measured in August 1975 and August 1976, when westerlies predominated. The complicated tidal picture is detailed, but is not easily summarized.

Roper, R. G.↗
NASA NTRS1979

On the determination of diffusion lengths by means of angle-lapped p-n junctions

A standard procedure for determining the minority carrier diffusion length by means of SEM consists of scanning an angle-lapped surface of a p-n junction and measuring the resulting short circuit current as a function of beam position. The present paper points out that the usual expression linking the short circuit current induced by the electron beam to the angle between the semiconductor surface and the junction plane is incorrect. The correct expression is discussed and it is noted that, for angles less than 10 deg, the new and the old expression are practically indistinguishable.

Von Roos, O.↗
NASA NTRS1978

Comprehensive thermoelectric properties of n- and p-type 78a/o Si - 22a/o Ge alloy

The time and temperature dependence of the thermoelectric properties on n- and p-type 78 a/o Si - 22 a/o Ge alloy are presented in detail for the range of temperatures of zero to 1000 C and operating times up to twelve years. The mechanisms responsible for the time dependence of the properties are discussed and mathematical models used in the derivation of the property values from experimental data are presented. The thermoelectric properties for each polarity type of the alloy are presented as a function of temperature for various operating times.

Raag, V.↗
NASA NTRS1979

Auger recombination in heavily doped shallow-emitter silicon p-n-junction solar cells, diodes, and transistors

A rigorous analytic evaluation of an emitter model that includes Auger recombination but excludes bandgap narrowing is presented. It is shown that such a model cannot explain the experimentally observed values of the open-circuit voltage in p-n-junction silicon solar cells. Thus physical mechanisms in addition to Auger recombination are responsible for the experimentally observed values of the open-circuit voltage in silicon solar cells and the common-emitter current gain in bipolar transistors.

Shibib, M. A.↗