Design and fabrication of the “SiREAD”- A low power, low noise and high performance waveform sampling chip for high channel count SiPM readout
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Monolithic porous bulk materials have many promising applications ranging from energy storage and catalysis to high energy density physics. High resolution additive manufacturing techniques, such as direct laser writing via two photon polymerization (DLW-TPP), now enable the fabrication of highly porous microlattices with deterministic morphology control. In this work, DLW-TPP is used to print millimeter-sized foam reservoirs (down to 0.06 g cm –3 ) with tailored density-gradient profiles, where density is varied by over an order of magnitude (for instance from 0.6 to 0.06 g cm –3 ) along a length of <100 µm. Taking full advantage of this technology, however, is a multiscale materials design problem that requires detailed understanding of how the different length scales, from the molecular level to the macroscopic dimensions, affect each other. The design of these 3D-printed foams is based on the brickwork arrangement of 100 × 100 × 16 µm 3 log-pile blocks constructed from sub-micrometer scale features. A block-to-block interdigitated stitching strategy is introduced for obtaining high density uniformity at all length scales. Lastly, these materials are used to shape plasma-piston drives during ramp-compression of targets under high energy density conditions created at the OMEGA Laser Facility.
Titanium-based anode materials are attracting considerable attention for use in high-performance lithium-ion batteries, but the compromised energy density caused by high voltage plateaus and unsatisfactory capacities severely retards their practical applications. Herein, a molten-salt synthesis of Li 2 TiSiO 5 crystalline platelets and a subsequent selective facet modification by in situ growth of TiO 2 nanocrystal frames are facilely achieved. The discharge voltage plateau at around 0.5 V renders the Li 2 TiSiO 5 anode safe compared with graphite and confers a high energy density compared with zero-strain Li 4 Ti 5 O 12 anode. With the optimized size, structure, and content of modified TiO2 nanocrystals associated with the exposed (001) plane of Li 2 TiSiO 5 , the Li 2 TiSiO 5 -based anodes can deliver a capacity of above 300 mAh g -1 , enhanced rate performance, and a capacity retention of 66% after 10 000 cycles. In situ X-ray diffraction and ex situ transmission electron microscopy have demonstrated the structural stability of the anodes upon charge/discharge. Further theoretical calculation reveals 3D migration paths of Li + ions in Li 2 TiSiO 5 . The selective modification of in situ grown TiO2 nanocrystals on certain facets of crystallites opens a new door for the development of electrode materials possessing superior electrochemical properties.
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Na-based batteries have long been regarded as an inexpensive, sustainable candidate for large-scale stationary energy storage applications. Unfortunately, the market penetration of conventional Na-NiCl2 batteries is approaching its limit for several reasons, including limited rate capability and high Ni cost. Herein, a Na-FeCl2 battery operating at 190 °C is reported that allows a capacity output of 116 mAh g-1 at an extremely high current density of 33.3 mA cm-2 (˜0.6C). The superior rate performance is rooted in the intrinsically fast kinetics of the Fe/Fe2+ redox reaction. Furthermore, it is demonstrated that a small amount of Ni additive (10 mol%) effectively mitigates capacity fading of the Fe/NaCl cathode caused by Fe particle pulverization during long-term cycling. The modified Fe/Ni cathode exhibits excellent cycling stability, maintaining a discharge energy density of over 295 Wh kg-1 for 200 cycles at 10 mA cm-2 (˜C/5).
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Indium oxide is a major component of many technologically important thin films, most notably the transparent conductor indium tin oxide (ITO). Despite being pyrophoric, homoleptic indium(III) alkyls do not allow atomic layer deposition (ALD) of In 2 O 3 using water as a co-precursor at substrate temperatures below 200 °C. Several alternative indium sources have been developed, but none allows ALD at lower temperatures except in the presence of oxidants such as O 2 or O 3 , which are not compatible with some substrates or alloying processes. We have synthesized a new indium precursor, tris( N , N' -diisopropylformamidinato)indium(III), compound 1 , which allows ALD of pure, carbon-free In 2 O 3 films using H 2 O as the only co-reactant, on substrates in the temperature range 150–275 °C. In contrast, replacing just the H of the anionic i PrNC(H)N i Pr ligand with a methyl group (affording the known tris( N , N' -diisopropylacetamidinato)indium(III), compound 2 ) results in a considerably higher and narrower ALD window in the analogous reaction with H 2 O (225–300 °C). Kinetic studies demonstrate that a higher rate of surface reactions in both parts of the ALD cycle gives rise to this difference in the ALD windows.
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In this study, twenty-one high purity germanium (HPGe) background spectra were collected over 2 years at Los Alamos National Laboratory. A quality assurance methodology was developed to monitor spectral background levels from thermal and fast neutron flux levels and naturally occurring radioactive material decay series radionuclides. 238 U decay products above 222 Rn demonstrated minimal temporal variability beyond that expected from counting statistics. 238 U and 232 Th progeny below Rn gas displayed at most twice the expected variability. Further, an analysis of the 139 keV 74 Ge(n, γ) and 691 keV 72 Ge(n, n') spectral features demonstrated temporal stability for both thermal and fast neutron fluxes.