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The experimental information on critical currents and epitaxial thin films of high temperature superconductors is summarized. Experiments carried out to measure critical currents across single grain boundaries are described. A variety of mechanisms responsible for limiting currents in films as well as across grain boundaries are presented and their predictions compared with experimental data.
Experimental information on critical currents and epitaxial thin films of high temperature superconductors is summarized. Experiments performed to measure critical currents across single grain boundaries are described. A variety of mechanisms responsible for limiting currents in films as well as across grain boundaries are presented and their predictions compared with experimental data.
We demonstrate generalizable semantic segmentation using minimal ground truth data. Correlated scanning electron microscopy (SEM) images and electron backscatter diffraction (EBSD) measurements of frictionstir processed 316L stainless steel plates were used to train deep learning models for grain boundary segmentation. Secondary electron (SE) imaging taken at an accelerating voltage of 10 keV correlated to EBSD-derived grain boundaries produced the best performing model. Notably, an ensemble of three models trained on a single SE image produced accurate segmentation over a series of BSE images of samples manufactured under different processing parameters, with a resultant mean absolute error in grain size of 0.34 µm. The striking generalizability of the models likely results from the similar escape depths of the SE training input and the EBSD training output and the reduced probability of dislocation artifacts appearing in the image. This finding highlights the importance of considering the physical principles behind imaging in the development of robust segmentation models for microstructure characterization.
Enhancing the lifetime of multilayer ceramic capacitors (MLCCs) is critical in many aerospace, naval, or electrical grid applications, where device failure could lead to catastrophic consequences. The migration of oxygen vacancies from the ceramic to the electrode interface under constant bias is known to reduce the lifetime of oxide-based MLCCs. Bias cycling presents an opportunity to enhance MLCC lifetime by reducing oxygen vacancy migration. The ideal frequency range is expected to lie between frequencies low enough to avoid self-heating but high enough to avoid interfacial defect formation. However, the impact of low-frequency bipolar voltage cycling (BVC) on MLCC degradation mechanisms has not been well studied. This work investigates the impact of periodic BVC on the degradation of MLCCs through highly accelerated lifetime testing (HALT) on X7R capacitors. HALT tests were conducted at 255 °C and 60 V using different switching frequencies: 0 (dc), 0.1, 2.5, and 10 Hz. BVC was found to improve the lifetime of MLCCs compared to dc test conditions. MLCCs tested at 10-Hz BVC showed a 311% increase in average time to failure compared to the dc case. Impedance spectroscopy shows that BVC decreases the rate of resistance degradation within MLCCs, indicating that oxygen vacancy migration to the electrodes is mitigated. The impedance spectra taken on BVC samples highlight how grain boundaries play a vital role in trapping oxygen vacancies. Periodic cycling causes oxygen vacancies to become trapped at grain boundaries, resulting in oxygen vacancies taking longer to reach the electrode interface and thus increasing MLCC lifetime. This work highlights not only how BVC can be used to increase MLCC lifetime but also how periodically cycling MLCCs could increase lifetime in extreme environments, such as at elevated temperatures and electric fields.
Here, in this work, the intragranular distributions of the densities of geometrically necessary dislocations (GNDs) generated in a polycrystalline tantalum (Ta) sample loaded in shock compression to spall are investigated. The sample studied is a highly resolved three-dimensional (3D) map of the orientations, grain boundary morphology, and voids across a 0.276mm 3 (with sample dimensions of 688.5µm x 669µm x 600µm) region of the microstructure about the spall plane obtained by TriBeam tomography. We present a formulation for calculating the crystallographic screw and edge character GND densities at a material point within body centered cubic (BCC) crystals when provided any number of potential slip systems or modes. Combining the 3D characterization, GND formulation, and a sample containing ≈ 6000 grains, we sought statistically relevant correlations between GND density per grain with grain size, grain orientation, void formation, and proximity from the spall plane. We show that GND density per grain increases with decreasing distance from the spall plane. Most grains had heterogeneously distributed GND densities but were free of any detectable voids, at least within the ≈ 1.5µm resolution of the characterization technique. It is found that the GND density for most grains is insensitive to grain size and grain orientation. Only the fraction of grains with the highest GND densities tended to have a [001] parallel to shock-direction orientation. Intragranular 3D maps of GNDs reveals that grains that contain voids have high GND density concentrations in the intragranular region immediately surrounding the void. The local intragranular GND mapping also showed voids that are connected to grain boundaries preferred to grow into the grain with the larger size, regardless of orientation.
Addressing sustainable energy storage remains crucial for transitioning to renewable sources. While Li‐ion batteries have made significant contributions, enhancing their capacity through alternative materials remains a key challenge. Micro‐sized silicon is a promising anode material due to its tenfold higher theoretical capacity compared to conventional graphite. However, its substantial volumetric expansion during cycling impedes practical application due to mechanical failure and rapid capacity fading. A novel approach is proposed to mitigate this issue by incorporating trace amounts of aluminum into the micro‐sized silicon electrode using ball milling. Density functional theory (DFT) is employed to establish a theoretical framework elucidating how grain boundary sliding, a key mechanism involved in preventing mechanical failure is facilitated by the presence of trace aluminum at grain boundaries. This, in turn, reduces stress accumulation within the material, reducing the likelihood of failure. To validate the theoretical predictions, capacity retention experiments are conducted on undoped and Al‐doped micro‐sized silicon samples. In conclusion, the results demonstrate significantly reduced capacity fading in the doped sample, corroborating the theoretical framework and showcasing the potential of aluminum doping for improved Li‐ion battery performance.
Abstract Stress relaxation cracking (SRC) has been reported as a dominant failure mechanism for 347H stainless steel welds at elevated service temperatures, occurring in either the heat-affected zone (HAZ) or fusion zone (FZ). In this study, SRC susceptibility of physically simulated HAZ and cross-welded E347-347H stainless steel welds was studied using a four-step accelerated SRC test with a thermomechanical physical simulator. The stress and temperature range studied represents weld-induced residual stress at 150–600 MPa and post-weld heat treatment temperatures between 800 and 1050 °C. For all temperature conditions, the cross-welded samples failed at a lower critical stress threshold than the simulated HAZ. A finite element model of a 50.8-mm-thick single-V groove weld was used to generate the residual stress maps induced by a 40-pass welding procedure, which in combination with the experimental threshold stress map predicted potential SRC failure locations. Postmortem microstructural evaluations were performed to identify contributing characteristics to SRC. It was found that HAZ samples exhibited a combination of creep void development, secondary cracks with intergranular fracture near grain boundary carbides, and eutectic phases. FZ samples showed brittle fracture with cracks propagating along straight, non-tortuous interdendritic grain boundaries.
Increasing the grain size is a potential strategy to reduce grain-boundary recombination and improve performance of thin-film solar cells. Here, CdTe thin films with a range of grain sized were produced by varying the CdC1 2 post-deposition treatment temperature. We use high-resolution cathodoluminescence (CL) microscopy to study recombination and shallow defect levels in detail. Intensities from room temperature CL maps were compared across samples. We find that the CL intensity initially increases with grain size, as expected, but then plateaus as the grain size is increased further. The plateau is correlated with a decrease in the characteristic length-related to the carrier diffusion length-determined from CL intensity profiles near grain boundaries. In addition, low-temperature CL measurements demonstrate the evolution of the defect levels with CdC1 2 temperature.
When a metallic material is exposed to a high temperature in an ambient atmosphere, oxidation takes place on the metallic surface. The formed oxides (both surface and grain boundary oxides) are mechanically brittle so that if the stress is high enough the oxides will be cracked. The grain boundary oxide formation in TAZ-8A nickel-base superalloy was studied. The effect of oxide crack nucleus on low cycle fatigue life will be analyzed. The TAZ-8A was subjected to high temperature oxidation tests in air under the stress-free condition. The oxidation temperatures were 600, 800, and 1000 C. The oxidation time varies from 10 to 1000 hours.
Substantial strain-hardening was noted during the initial stages of deformation in constant-velocity compression tests conducted on as-cast samples of the LiF-22 mol pct CaF2 hypereutectic salt at 800 K. The deformed specimens exhibited extensive grain-boundary cracking and cavitation, suggesting that such cracking, in conjunction with interfacial sliding, is important for cavity nucleation at grain boundaries and at the LiF-CaF2 interfaces. Cavity growth and interlinkage occur through the preferential failure of the weaker LiF phase.
A study was conducted to determine the processes which govern hold time crack growth behavior in the LSHR disk P/M superalloy. Nineteen different heat treatments of this alloy were evaluated by systematically controlling the cooling rate from the supersolvus solutioning step and applying various single and double step aging treatments. The resulting hold time crack growth rates varied by more than two orders of magnitude. It was shown that the associated stress relaxation behavior for these heat treatments was closely correlated with the crack growth behavior. As stress relaxation increased, the hold time crack growth resistance was also increased. The size of the tertiary gamma' in the general microstructure was found to be the key microstructural variable controlling both the hold time crack growth behavior and stress relaxation. No relationship between the presence of grain boundary M23C6 carbides and hold time crack growth was identified which further brings into question the importance of the grain boundary phases in determining hold time crack growth behavior. The linear elastic fracture mechanics parameter, Kmax, is unable to account for visco-plastic redistribution of the crack tip stress field during hold times and thus is inadequate for correlating time dependent crack growth data. A novel methodology was developed which captures the intrinsic crack driving force and was able to collapse hold time crack growth data onto a single curve.
Doping a small amount of Al can effectively enhance coercivity in Nd-Fe-B magnets. Here we investigated the partitioning behavior of Al and its effect on coercivity in Nd-Fe-B using first principles DFT (density functional theory) calculation and micromagnetic simulation. The calculated substitution energies of Fe by Al are negative at the crystallographic sites of 4c and 8j 2 while they are positive values at the other sites in Nd 2 Fe 14 B (2:14:1), implying a small solubility of Al in 2:14:1. Further, Al prefers to segregate at grain boundary (GB) and stabilize the Nd-Fe-Al phase with a Nd 6 Fe 13 Si-type tetragonal structure (6:13:1). The formation of the antiferromagnetic or weak ferrimagnetic 6:13:1-like phase depletes Fe and reduces the amount of ferromagnetic Nd–Fe type grain boundary phase (GBP), which weakens the inter-grain magnetic interaction. Micromagnetic simulations indicate that the 6:13:1-like GBP increases the pinning field of magnetic domain wall at GB and suppresses the nucleation of reversal magnetic domain on the grain surface of 2:14:1 during demagnetization process. The formation of Al-rich shell on 2:14:1 grain surface can further moderately increase the domain pinning field at GB and the nucleation field of 2:14:1 grain. Developing novel processing method to tailor Al segregation and promote formation of 6:13:1-like phase at GB can be a promising approach to improve coercivity in Nd-Fe-B magnet.
Here the microstructures and deformation mechanisms of the f.c.c. medium-entropy alloy (MEA) (NiCoCr) 76 (Ni 6 AlTi) 3 has been analyzed after various thermo-mechanical treatments. The solutionized, single-phase MEA, which had a grain size of 93.4 ± 31.9 μm, was cold-rolled (CR) to a 80% thickness reduction after which it showed both a high yield strength (YS) of 1539 MPa and a high ultimate tensile strength (UTS) of 1602 MPa, but an elongation to failure, ε, of only 16%. The CR MEA was then subjected to one of two heat treatments: (1) the CR MEA was recrystallized at 1100°C for 24 h, which produced a single-phase material with 85 ± 61.7 μm grain size that exhibited a much lower YS and UTS of 364 MPa and 747 MPa, respectively, but a much greater ε of 73%; and (2) the MEA was aged at 700°C for 24 h, which produced a fine-grained (1.1 ± 0.9 μm) material and a high volume fraction (0.35) of 12 nm dia. L1 2 nanoparticles that exhibited an excellent combination of strength and ductility, viz., YS~1501 MPa, UTS~1651 MPa, elongation ~26%. The grain boundary strengthening and precipitation strengthening were together estimated to account for ~58% of the YS in the latter material. After deformation, the recrystallized MEA contained numerous stacking faults and a Taylor lattice structure containing domain boundaries and microbands, while the aged MEA exhibited numerous stacking faults and sheared particles. The density of low-angle grain boundaries (LAGBs) in the recrystallized MEA increased by 100 times to 2.2 × 10 –1 μm/μm 2 while the density of CSL Σ3 n boundaries decreased by 71% to 7.8 × 10 –3 μm/μm 2 after deformation. In contrast, the density of LAGBs in the aged MEA increased by 5 times to 2.6 μm/μm 2 while the density of CSL Σ3 n boundaries decreased by 57% to 0.6 μm/μm 2 after deformation.
In several precipitation hardened alloys that are susceptible to intergranular ductile failure, precipitation does not always occur uniformly throughout the microstructure, and regions close to grain boundaries may remain precipitate-free. These precipitate-free zones (PFZs) in the material microstructures result in plastically heterogeneous grains, since PFZs are expected to have lower yield strength but higher strain-hardenability compared to the precipitate containing grain interior. Experimentally, the presence of PFZs in precipitation-hardened alloys has been associated with both increase and decrease in materials’ ductility, with or without significant change in the strength. Thus, to understand and rationalize the experimental observations, we have carried out extensive microstructure-based finite element calculations of intergranular ductile failure in materials under tensile loading conditions. In the calculations, both the grain boundaries and PFZs are discretely modeled, and a wide range of the values of yield strength, strain-hardenability and width of PFZs in the material microstructures are analyzed. Our results show that the effects of PFZs on the overall mechanical response of the material strongly depend on the values of yield strength and strain-hardenability of PFZs. Here, there exists an optimum combination of the values of these two parameters that can result in the overall ductility and tensile strength of the material microstructures with PFZs being greater than the microstructures without PFZs.
Results of Ge film recrystallization using focused laser beams and GaAs film growth on such layers in the making of high efficiency thin-film AMOS solar cells are discussed. Since a conversion efficiency of 14% was obtained for an AMOS cell fabricated on sliced bulk polycrystalline GaAs, high efficiency cells are being developed by chemically vapor-depositing GaAs films on previously recrystallized evaporated Ge films to minimize the grain boundary (GB) effects. Schottky barrier solar cells made on sliced polycrystalline GaAs wafers were studied to investigate the effects of grain boundaries on cell properties and the potential efficiency of GaAs thin-film cells. Ge film recrystallization and the chemical vapor deposition (CVD) of the 2 to 3 micron thick GaAs films are described. AMOS solar cells with 100 Angstrom thick Ag metallization were made on CVD GaAs/recrystallized Ge/W substrates with an energy conversion efficiency of 8%.
Crystallographic and elastic moduli data are presented which document the degree of texture in several oxide dispersion-strengthened (ODS) nickel-base alloys. The existence of strong crystallographic textures in such multicrystalline alloys is considered important, since the small angle grain boundaries may be partially responsible for creep threshold stresses. Gleiter (1979) has shown that ideal, low energy boundaries will act as vacancy sources only when the applied stress is greater than a threshold stress, while large angle grain boundaries will emit vacancies at all stress levels. The continued operation of a net vacancy in an ODS alloy must be avoided, since it will lead to a localized disruption of the microstructure.
Understanding the impact of microstructure on corrosion rates can aid the development of corrosion-resistant alloys for molten salt reactors. Here in this work, we develop an electrochemical phase-field model for capturing the microstructure-dependent corrosion of structural alloys by molten salts. As a demonstration problem, we apply this model to capture the selective depletion of Cr from Ni-Cr grain boundaries during corrosion in molten FLiBe salt. We perform sensitivity analysis and model verification on 1D simulations to confirm that the model predicts diffusion-limited kinetics. The model is validated using 1D, 2D, and 3D simulations against experimental data for Ni-5Cr and Ni-20Cr corrosion in molten FLiBe. The 1D simulations predict the corrosion behavior with reasonable accuracy when using an effective diffusion coefficient that accurately represents the grain boundary diffusion. 2D simulations that represent the grain structure underpredict the corrosion. 3D simulations that represent the grain structure predict the corrosion with reasonable accuracy. The corrosion rate predicted by the 3D simulations is proportional to the average grain size at the alloy/salt interface.
Over the last several decades, champion photovoltaic (PV) devices using CuInGaSe2 (CIGS) as the absorber material have been achieved using polycrystalline films exclusively. This has led to the assumption that polycrystalline CIGS generally outperform single-crystal CIGS in PV devices. However, recently, very high-quality epitaxial CIGS has been grown on GaAs substrates producing PV device efficiencies of 20.0%. These results have revived the debate on what effects grain boundaries have on PV device efficiencies. In this contribution, we compare the optoelectronic properties of polycrystalline CIGS films with those of high-efficiency epitaxial CIGS films. This comparison reveals that grain boundaries are associated with properties that negatively impact PV device efficiency. Additionally, we find that the grain interiors in polycrystalline films exhibit properties that are similar to the high-performance epitaxial films. Our results suggest that it may be possible to achieve higher device efficiencies with epitaxial CIGS than with polycrystalline films.