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At least 775 records · Page 43
All sourcesNASA NTRSDOE OSTI
NASA NTRS1991

Vacuum deposited optical coatings experiment (AO 138-4)

The aim of this experiment was to test the optical behavior of 20 components and coatings subjected to space exposure. Most of them are commonly used for their reflective or transmittive properties in spaceborne optics. They consist in several kind of metallic and dielectric mirrors designed for the 0.12 to 10 microns spectrum, UV, and NIR bandpass filters, visible, and IR antireflecting coatings, visible/IR dichroic beam splitters, and visible beam splitter. The coatings were deposited on various substrates such as glasses, germanium, magnesium fluoride, quartz, zinc selenide, and kanigened aluminum. Several coating materials were used such as Al, Ag, Au, MgF2, LaF3, ThF3, ThF4, SiO2, TiO2, ZrO2, Al2O3, MgO, Ge, and ZnSe. Five samples of each component were manufactured. Two flight samples were mounted in such a way that one was directly exposed to space and the other looking backwards. The same arrangement was used for the spare samples stored on ground in a box identical to the flight one and they were kept under vacuum during the LDEF mission. Finally, one set of reference components was stocked in a sealed box under a dry nitrogen atmosphere. By comparing the preflight and postflight optical performances of the five samples of each component, it is possible to detect the degradations due to the space exposure.

Charlier, Jean↗
NASA NTRS1991

Exposure to space radiation of high-performance infrared multilayer filters

The University of Reading experiment exposed IR interference filters and crystal substrates on identical earth facing and leading-edge sites of the Long Duration Exposure Facility (LDEF). Filters mostly comprised multilayer coatings of lead telluride (PbTe)/II-IV on germanium (Ge) and other substrates: crystals comprised CdTe, MgF2, sapphire, quartz, silicon, and some softer materials. Identical control samples were maintained in the laboratory throughout the experiment. The filters were novel in their design, construction and manufacture, and categorized high-performance because of their ability to resolve emission spectra of the important atmospheric gases for various purposes in remote sensing. No significant changes were found in the spectra of the hard-coated filters or in the harder crystals (the softer materials were degraded to an extent). By virtue of this well-documented and long exposure in LDEF, the qualification of the filter type is significantly improved for its future requirements.

Seeley, J. S.↗
NASA NTRS1991

Calculation of Gallium-metal-Arsenic phase diagrams

Electrical contacts and metallization to GaAs solar cells must survive at high temperatures for several minutes under specific mission scenarios. The determination of which metallizations or alloy systems that are able to withstand extreme thermal excursions with minimum degradation to solar cell performance can be predicted by properly calculated temperature constitution phase diagrams. A method for calculating a ternary diagram and its three constituent binary phase diagrams is briefly outlined and ternary phase diagrams for three Ga-As-X alloy systems are presented. Free energy functions of the liquid and solid phase are approximated by the regular solution theory. Phase diagrams calculated using this method are presented for the Ga-As-Ge and Ga-As-Ag systems.

Scofield, J. D.↗
NASA NTRS1991

Gallium Arsenide solar cell radiation damage experiment

Gallium arsenide (GaAs) solar cells for space applications from three different manufactures were irradiated with 10 MeV protons or 1 MeV electrons. The electrical performance of the cells was measured at several fluence levels and compared. Silicon cells were included for reference and comparison. All the GaAs cell types performed similarly throughout the testing and showed a 36 to 56 percent power areal density advantage over the silicon cells. Thinner (8-mil versus 12-mil) GaAs cells provide a significant weight reduction. The use of germanium (Ge) substrates to improve mechanical integrity can be implemented with little impact on end of life performance in a radiation environment.

Maurer, R. H.↗
NASA NTRS1991

Annealing characteristics of amorphous silicon alloy solar cells irradiated with 1.00 MeV protons

Amorphous Si:H and amorphous Si sub x, Ge sub (1-x):H solar cells were irradiated with 1.00 MeV proton fluences in the range of 1.00E14 to 1.25E15 cm (exp -2). Annealing of the short circuit current density was studied at 0, 22, 50, 100, and 150 C. Annealing times ranged from an hour to several days. The measurements confirmed that annealing occurs at 0 C and the initial characteristics of the cells are restored by annealing at 200 C. The rate of annealing does not appear to follow a simple nth order reaction rate model. Calculations of the short-circuit current density using quantum efficiency measurements and the standard AM1.5 global spectrum compare favorably with measured values. It is proposed that the degradation in J sub sc with irradiation is due to carrier recombination through the fraction of D (o) states bounded by the quasi-Fermi energies. The time dependence of the rate of annealing of J sub sc does appear to be consistent with the interpretation that there is a thermally activated dispersive transport mechanism which leads to the passivation of the irradiation induced defects.

Abdulaziz, Salman S.↗
NASA NTRS1991

An efficient hybrid scheme for the analysis of counter rotating propellers

An efficient solution procedure has been developed for analyzing inviscid unsteady flow past counter rotating propellers. This scheme is first order accurate in time and second order in space, and has been extended to fourth order accuracy in the axial direction. The solution procedure has been applied to a 2-bladed SR-7 single rotation propeller and to a GE F7/A7 counter rotation propeller. The pressure coefficients and the global quantities, power and thrust, show good comparison with experimental measurements.

Srivastava, R.↗
NASA NTRS1990

Crystal-melt interface shape of Czochralski-grown large diameter germanium crystals

Crystal-melt interface shapes of 100 to 200 mm diameter 111-line Ge grown by the Czochralski technique have been examined using the method of fast withdrawal from the melt. Initially, the interface shape is convex, then transforms gradually into a sigmoidal shape, becomes nearly planar at about one third of the final crystal length, and finally assumes a concave profile with progressively increasing curvature. The nearly planar interface has a double-facet structure, with an annular facet at the edge of the crystal in addition to the central (111) facet. Formation of the annular facet is accompanied by a giant oscillation of the pull rate when the maximum average pull rate is exceeded. Such oscillation is detrimental to crystal quality, since it introduces a region of high dislocation density. An average pull rate maximum of 2 cm/h has been found to allow for a smooth growth of 200 mm diameter crystals. The origin of the pull rate perturbation is discussed in terms of an instantaneous change in the equilibrium shape of the meniscus.

Roth, M.↗
NASA NTRS1990

Observation of seeded second harmonic generation in bulk germanosilicate fiber preforms

Simultaneous irradiation of a bulk fiber preform with molar concentrations of 3 pct Ge and 0.5 pct P doped silica core region resulted in self-organized second harmonic generation with an effective chi(2) of about 1.2 x 10 to the -16th m/V. The experiments revealed that the bulk preform requires the same critical IR intensity (10 GW/sq cm) as the drawn fibers to prepare. Attempts to self-prepare the preform field, indicating that self-preparation in fibers is most likely initiated by second harmonic generation associated with the core-cladding interface.

Lawandy, N. M.↗
NASA NTRS1991

A model for the high-temperature transport properties of heavily doped n-type silicon-germanium alloys

A model is presented for the high-temperature transport properties of large-grain-size, heavily doped n-type silicon-germanium alloys. Electron and phonon transport coefficients are calculated using standard Boltzmann equation expressions in the relaxation time approximation. Good agreement with experiment is found by considering acoustic phonon and ionized impurity scattering for electrons, and phonon-phonon, point defect, and electron-phonon scattering for phonons. The parameters describing electron transport in heavily doped and lightly doped materials are significantly different and suggest that most carriers in heavily doped materials are in a band formed largely from impurity states. The maximum dimensionless thermoelectric figure of merit for single-crystal, n-type Si(0.8)Ge(0.2) at 1300 K is estimated at ZT about 1.13 with an optimum carrier concentration of n about 2.9 x 10 to the 20th/cu cm.

Vining, Cronin B.↗
NASA NTRS1991

Design parameters of a resonant infrared photoconductor with unity quantum efficiency

This paper proposes a concept of a resonant infrared photoconductor that has characteristics of 100 percent quantum efficiency, high photoconductive gain, and very low noise equivalent power. Central to this concept is an establishment of a high-finesse absorption cavity internal to the detector element. A theoretical analysis is carried out, demonstrating this concept and providing some design guidelines. A Ge:Ga FIR detector is presently being fabricated using this approach.

Farhoomand, Jam↗
NASA NTRS1990

The strange gases of Jupiter and Saturn

The various gases found in the atmospheres of Jupiter and Saturn are discussed. A history of scientific investigation of these planets is outlined and results of these discoveries are considered. The molecular species found in these two planets are classified into several groups. The first group consists of H2, He, CH4, NH3, and H2O while the second group contains gases formed as the chemical byproducts of solar radiation, including simple hydrocarbons such as C2H2 and C2H6 and charged particles such as H3(+). The last group contains compounds which are chemically unstable in parts of Jupiter's atmosphere that have been probed and include Ge and As; two elements usually found in minerals on earth. An investigation of origin of these elements which are currently part of the upper reaches of the atmosphere of Jupiter and Saturn has led to discoveries about much deeper and hotter parts of atmospheres that can never be observed directly. A number of hypotheses are presented to account for the presence of various unexpected compounds, such as carbon monoxide.

Noll, Keith S.↗
NASA NTRS1990

Experimental approaches for improving SiGe thermoelectric efficiency at JPL

Efforts to improve the thermoelectric efficiency of silicon-germanium alloys are discussed. These efforts are essentially focused on substantially enhancing carrier concentration levels and thus increasing the power factor values of n-type materials. With the help of thermodynamic phase diagram calculations, a combination of various crystal growth and dopant saturation techniques is used for this purpose. Bulk polycrystal growth of double-doped materials is achieved by zone leveling while a new method (the traveling heater method) for high-quality single-crystal growth of SiGe is being developed. Thin films of homogeneous single-crystalline multidoped Si80Ge20 have also been successfully grown from low-temperature melts to investigate combined dopant solid solubility variations. Very high carrier concentration levels were obtained by (P+As)-combined diffusion in zone-leveled and hot-pressed materials. The good overall understanding of doping mechanisms which has been achieved should enable optimization of the thermoelectric properties over this extended carrier concentration range. Reductions in thermal conductivity are being sought by introduction of very small phonon scattering centers (inert material) in the initial powders-precursors of Si-Ge alloys. This approach should benefit both n- and p-type materials.

Borshchevsky, Alex↗
NASA NTRS1991

Substrate effects on the epitaxial growth of ZnGeP2 thin films by open tube organometallic chemical vapor deposition

Epitaxial ZnGeP2-Ge films have been grown on (111)GaP substrates using MOCVD. The films grown with dimethylzinc to germane flow rate ratio R greater than 10 show mirror-smooth surface morphology. Films grown with R less than 10 show a high density of twinning, including both double position and growth twins. Compared to films grown on (001) GaP substrates, the layers on (111) GaP generally show a higher density of microstructural defects. TEM electron diffraction patterns show that the films grown on (111) GaP substrates are more disordered than films grown on (001) GaP under comparable conditions. The growth rate on (111) GaP substrates is about 2.5 times slower than that on (001) GaP, and films grown on Si substrates show extensive twinning formation. Both TEM and SEM examinations indicate that smooth epitaxial overgrowth may be easier on (111) Si substrates than on (001) Si.

Xing, G. C.↗
NASA NTRS1991

SiGe/Si heterojunction internal photoemission long-wavelength infrared detectors fabricated by molecular beam epitaxy

A new SiGe/Si heterojunction internal photoemission (HIP) long-wavelength infrared (LWIR) detector has been fabricated by molecular beam epitaxy (MBE). The detection mechanism of the SiGe/Si HIP detector is infrared absorption in the degenerately doped p+-SiGe layer followed by internal photoemission of photoexcited holes over a heterojunction barrier. By adjusting the Ge concentration in the SiGe layer, and, consequently, the valence band offset between SiGe and Si, the cutoff wavelength of SiGe HIP detectors can be extended into the LWIR (8-17-micron) regime. Detectors were fabricated by growing p+-SiGe layers using MBE on patterned p-type Si substrates. The SiGe layers were boron-doped, with concentrations ranging from 10 to the 19th/cu cm to 4 x 10 to the 20th/cu cm. Infrared absorption of 5-25 percent in a 30-nm-thick p+-SiGe layer was measured in the 3-20-micron range using a Fourier transform infrared spectrometer. Quantum efficiencies of 3-5 percent have been obtained from test devices in the 8-12-micron range.

Lin, True-Lon↗
NASA NTRS1991

The transient gamma-ray spectrometer

The authors describe the Transient Gamma-Ray Spectrometer (TGRS) to be flown onboard the WIND spacecraft. This instrument is designed to detect cosmic gamma-ray bursts over the energy range of 20 keV to 10 MeV with an expected spectroscopic resolution of 2 keV at 1 MeV (E/Delta-E = 500). The active detection element is a 215-cu cm high-purity n-type Ge crystal cooled to cryogenic temperatures by a passive radiative cooler. The geometric field of view (FOV) defined by the cooler is 170 deg FWFM. Burst data are stored directly in an onboard 2.75-Mb burst memory with an absolute timing accuracy of +/-1.5 ms. This capacity is sufficient to store the entire spectral data set of all but the largest bursts. In addition to burst measurements, the instrument will also study solar flares, search for possible diffuse background lines, and monitor the 511-keV positron annihilation radiation from the galactic center. The experiment is scheduled to be launched on a Delta II launch vehicle from Cape Canaveral on December 31, 1992.

Owens, A.↗
NASA NTRS1991

Three dimensional numerical investigation of gravitational and solutal effects in a cylindrical cell

Three-dimensional numerical computations of natural convection in a cylindrical ampoule (L/R = 4) are presented for a Ga-doped Ge melt. The ampoule is maintained at isothermal end conditions, and the g vector is oriented at an angle gamma with the cylinder axis. Detailed velocity, temperature, and concentration field distributions are presented for different gravity levels and a range of inclination angles (gamma between 0 and 180 deg). For terrestrial conditions, complex, multicellular flow is found to occur for gamma between 0 and 180 deg. The strong convection results in significant isotherm distortions and enhanced heat transfer. As the gravity level is reduced to 0.001 g(0), the overall convection strength decays but the 3D multicellular flow persists, causing appreciable mass transfer. For a further reduction in the gravity level to 0.00001 g(0), the system thermo/solutal characteristics are close to a purely diffusive behavior. Flow and thermal and solutal distributions are presented in the principal, orthogonal, and cross sectional planes, and the average system heat and mass transfer are calculated.

Ramachandran, N.↗
NASA NTRS1990

Directions in gamma-ray spectroscopy

Current and future instrumentation for gamma-ray spectroscopy in the spectral range from 10 keV to 10 MeV is described. New technologies for Germanium (Ge) spectrometers and emerging detector technologies are highlighted. Scientific objectives are considered, with emphasis on capabilities beyond those of the Nuclear Astrophysics Explorer (NAE). A list of instrument requirements is given. Technologies under development for an NAE-era spectrometer are presented. Spectrometers beyond NAE and other types of future technologies are discussed, and a partial list of current and future spectrometers is provided.

Gehrels, Neil↗
NASA NTRS1990

The Nuclear Astrophysics Explorer

The Nuclear Astrophysics Explorer (NAE) is a concept for a possible future NASA Explorer mission which would obtain high resolution, E/Delta E about 500, observations of gamma-ray lines in order to study many fundamental problems in astrophysics. It operates from 15 keV to 10 MeV with a 3-sigma sensitivity of about 3 x 10 to the -6th ph/sq cm-s in a 10 to the 6th s observation. This is 100 times below the presently known gamma-ray line fluxes. The NAE uses a heavily shielded array of nine cooled Ge detectors in a very low background configuration. Its 10-deg field of view contains a versatile coded mask system which provides 2D imaging with 4-deg resolution, 1D imaging with 2-deg resolution and efficient measurements of emission from diffuse and point sources. The late 1990s is the earliest the NAE mission could begin. The scientific motivation, instrument concept, mission concept and expected results, and status and plans for the NAE are presented.

Matteson, James L.↗