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At least 775 records · Page 43
All sourcesNASA NTRSDOE OSTI
DOE OSTI2014

Electrically controlled spin polarization and selection in a topological insulator sandwiched between ferromagnetic electrodes

We theoretically investigate the electrically controllable spin polarization and selective efficiency of the edge state Dirac electron in a two-dimensional topological insulator (TI) sandwiched between ferromagnetic (FM) electrodes by using the method of Keldysh nonequilibrium Green's function. A nearly full spin polarization of the topological edge state with giant inversion of ∼80% is observed, which is much higher than the value previously reported. Moreover, the selective efficiency for spin-up electrons under the modulation of the parallel configuration of FM electrodes has been demonstrated to be larger than 95% for the first time, while that for spin-down electrons in the antiparallel case is higher than 90% in a wide energy range, owing to the inter-edge spin tunneling induced backscattering and spin dephasing effect. The obtained results may provide a deeper understanding of the TI edge states and a valuable guidance to design spin switch and filter with high on-off speed and selective efficiency based on TIs.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Penetration depth and absorption mechanisms of spin currents in Ir{sub 20}Mn{sub 80} and Fe{sub 50}Mn{sub 50} polycrystalline films by ferromagnetic resonance and spin pumping

Spintronics relies on the spin dependent transport properties of ferromagnets (Fs). Although antiferromagnets (AFs) are used for their magnetic properties only, some fundamental F-spintronics phenomena like spin transfer torque, domain wall motion, and tunnel anisotropic magnetoresistance also occur with AFs, thus making AF-spintronics attractive. Here, room temperature critical depths and absorption mechanisms of spin currents in Ir{sub 20}Mn{sub 80} and Fe{sub 50}Mn{sub 50} are determined by F-resonance and spin pumping. In particular, we find room temperature critical depths originating from different absorption mechanisms: dephasing for Ir{sub 20}Mn{sub 80} and spin flipping for Fe{sub 50}Mn{sub 50}.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Seed influence on the ferromagnetic resonance response of Co/Ni multilayers

The effect of Pd and Ru seed layers on the magnetic properties of [Co/Ni]{sub N} multilayers with varying number of bilayer repeats N is investigated using vector network analyzer ferromagnetic resonance. The effective anisotropy field H{sub Keff} is found to increase with N for Ru seed, but decreases for Pd until N = 15. As N is increased beyond 15, H{sub Keff} decreases for both seeds. In contrast, the damping parameter α decreases with N regardless of the seed, showing a 1/N dependence. Taking spin pumping into account, the intrinsic damping α{sub 0} for both Pd and Ru seeds reduce to α{sub 0} ≈ 0.01. These results demonstrate that there can be a strong influence of the seed/Co interface on anisotropy, especially for sufficiently low N, but not necessarily on α{sub 0}.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Above room-temperature ferromagnetism of Mn delta-doped GaN nanorods

One-dimensional nitride based diluted magnetic semiconductors were grown by plasma-assisted molecular beam epitaxy. Delta-doping technique was adopted to dope GaN nanorods with Mn. The structural and magnetic properties were investigated. The GaMnN nanorods with a single crystalline structure and with Ga sites substituted by Mn atoms were verified by high-resolution x-ray diffraction and Raman scattering, respectively. Secondary phases were not observed by high-resolution x-ray diffraction and high-resolution transmission electron microscopy. In addition, the magnetic hysteresis curves show that the Mn delta-doped GaN nanorods are ferromagnetic above room temperature. The magnetization with magnetic field perpendicular to GaN c-axis saturates easier than the one with field parallel to GaN c-axis.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Thermal ionization induced metal-semiconductor transition and room temperature ferromagnetism in trivalent doped ZnO codoped with lithium

Thermal ionization induced metallic to semiconductor (MST) transition occurring at 460 K for Zn{sub 0.97}Al{sub 0.03}O, 463 K for Zn{sub 0.94}Al{sub 0.03}Li{sub 0.03}O, and 503 K for Zn{sub 0.91}Al{sub 0.03}Li{sub 0.03}Mn{sub 0.03}O has been found in the sol-gel synthesized (using hexamethylenetetramine), trivalent doped (Al, Mn) ZnO codoped with lithium. Increase in the thermally ionized carrier concentration due to Al doping is responsible for near band edge (NBE) peak shift causing Fermi level to move into conduction band making it metallic consistent with resistivity results. Free carrier (thermally activated) neutralization with ionized donor is responsible for semiconducting nature, which is supported from the free carrier screening produced energy shift in the NBE of photoluminescence peak. Furthermore, independently band gap shrinkage is also obtained from UV-Visible studies confirming localization induced MST. An anti-correlation is found between defect density (DLE) and room temperature ferromagnetism (RTFM) indicating intrinsic defects are not directly responsible for RTFM.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Defect induced ferromagnetism in undoped ZnO nanoparticles

Undoped ZnO nanoparticles (NPs) with size ∼12 nm were produced using forced hydrolysis methods using diethylene glycol (DEG) [called ZnO-I] or denatured ethanol [called ZnO-II] as the reaction solvent; both using Zn acetate dehydrate as precursor. Both samples showed weak ferromagnetic behavior at 300 K with saturation magnetization M{sub s} = 0.077 ± 0.002 memu/g and 0.088 ± 0.013 memu/g for ZnO-I and ZnO-II samples, respectively. Fourier transform infrared (FTIR) spectra showed that ZnO-I nanocrystals had DEG fragments linked to their surface. Photoluminescence (PL) data showed a broad emission near 500 nm for ZnO-II which is absent in the ZnO-I samples, presumably due to the blocking of surface traps by the capping molecules. Intentional oxygen vacancies created in the ZnO-I NPs by annealing at 450 °C in flowing Ar gas gradually increased M{sub s} up to 90 min and x-ray photoelectron spectra (XPS) suggested that oxygen vacancies may have a key role in the observed changes in M{sub s}. Finally, PL spectra of ZnO showed the appearance of a blue/violet emission, attributed to Zn interstitials, whose intensity changes with annealing time, similar to the trend seen for M{sub s}. The observed variation in the magnetization of ZnO NP with increasing Ar annealing time seems to depend on the changes in the number of Zn interstitials and oxygen vacancies.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Detection of spin-resolved electronic structures from a buried ferromagnetic layer utilizing forward Mott scattering

We report ultrahigh-resolution spin-resolved hard X-ray photoemission (HAXPES) for a buried FeNi alloy film. By utilizing the forward Mott scattering in a Au layer on FeNi, our spin-resolved HAXPES method does not require a standard spin detector and allows us to use the multi-channel electron detection system for the high-efficient electron detection as used in conventional photoemission spectroscopy. A combination of the forward Mott scattering and multi-channel detection leads us to measure a clear spin polarization as well as spin-resolved majority and minority states in the Fe 2p core-level spectra without using the standard spin detector. This method enables us to measure spin-resolved core-level spectra for buried ferromagnetic materials.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

Ferromagnetism and topological surface states of manganese doped Bi{sub 2}Te{sub 3}: Insights from density-functional calculations

Based on first-principles calculations, the electronic, magnetic, and topological characters of manganese (Mn) doped topological insulator Bi{sub 2}Te{sub 3} were investigated. The Mn substitutionally doped Bi{sub 2}Te{sub 3}, where Mn atoms tend to be uniformly distributed, was shown to be p-type ferromagnetic, arising from hole-mediated Ruderman-Kittel-Kasuya-Yosida interaction. Mn doping leads to an intrinsic band splitting at Γ point, which is substantially different from that of nonmagnetic dopant. The topological surface state of Bi{sub 2}Te{sub 3} is indeed gapped by Mn doping; however, the bulk conductance limits the appearance of an insulating state. Moreover, the n-type doping behavior of Bi{sub 2}Te{sub 3} is derived from Mn entering into the van der Waals gap of Bi{sub 2}Te{sub 3}.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2014

First-principles study of carrier-induced ferromagnetism in bilayer and multilayer zigzag graphene nanoribbons

We studied magnetism in bilayer and multilayer zigzag graphene nanoribbons (ZGNRs) through first-principles density functional theory calculations. We found that the magnetic ground state of bilayer ZGNRs is the C-type antiferromagnetic (AFM) state, which is the AFM order between intraplane-edge carbon atoms and ferromagnetic (FM) order between interplane edge carbon atoms. In the cases of infinitely stacked multilayer ZGNRs, i.e., zigzag graphite nanoribbons, the C-type AFM state is also the most stable. By carrier doping, we found that the magnetic ground state changed from the C-AFM state to the FM state and, thus, realized two-dimensional FM surface (edge) states of graphite with a metallic conductivity.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

Controllable fully spin-polarized transport in a ferromagnetically doped topological insulator junction

We investigate the energy band structure and the spin-dependent transport for a normal/ferromagnetic/normal two-dimension topological insulator (TI) junction. By diagonalizing Hamiltonian for the system, the band structure shows that the edge states on two sides are coupled resulting in a gap opening due to the transverse spatial confinement. Further, the exchange field induced by magnetic impurities can also modulate the band structure with two spin degenerate bands splitting. By using the nonequilibrium Green's function method, the dependence of spin-dependent conductance and spin-polarization on the Fermi energy, the exchange field strength and the ferromagnetic TI (FTI) length are also analyzed, respectively. Interestingly, the degenerate conductance plateaus for spin-up and -down channels are broken, and both the conductances are suppressed by magnetic impurities due to the time-reversal symmetry broken and inelastic scattering. The spin-dependent conductance shows different behaviors when the Fermi energy is tuned into different ranges. Moreover, the conductance can be fully spin polarized by tuning the Fermi energy and the exchange field strength, or by tuning the Fermi energy and the FTI length. Consequently, the junction can transform from a quantum spin Hall state to a quantum anomalous Hall state, which is very important to enable dissipationless charge current for designing perfect spin filter.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Twofold Andreev reflections and coherent transport in ferromagnetic semiconductor/d-wave superconductor/ferromagnetic semiconductor double tunneling junctions

Coherent transport in a ferromagnetic semiconductor (FS)/d-wave superconductor (SC)/FS structure with (110) interfaces is studied by extending Bogoliubov-de Gennes equation into eight components, in which the interband coupling of heavy and light hole bands in the FS, the strengths of potential scattering at the interfaces, and the mismatches in the effective mass and Fermi vector between the FS and SC are taken into account. Twofold Andreev reflections exist due to the existence of two bands in the FS, in which the incident hole and the two Andreev-reflected electrons, belonging to the different spin subbands, form twofold spin-singlet pairing states near the FS/SC interface. It is shown that due to the interplay of the SC with unconventional d-wave pairing symmetry and FS, the differential conductance and tunneling magnetoresistance exhibit an abundant dependence on not only the interband coupling in the FS but also the strengths of potential scattering at the interfaces. More importantly, the properties are found to be quite different from those in the FS/s-wave SC/FS structure with conventional pairing symmetry for the SC.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Influence of La substitution on ferromagnetic properties of lead free Na{sub 0.5}Bi{sub 0.5}Ti{sub 0.988}Fe{sub 0.012}O{sub 3} multiferroic system

To study the effect of La doping and processing temperature, (Na{sub 0.5}Bi{sub 0.5}){sub 1−x}La{sub x}Ti{sub 0.988}Fe{sub 0.012}O{sub 3} (NBLTF) samples have been prepared by sol-gel method by employing two approaches namely with and without mol% excess of Na and Bi. X-ray diffraction analysis confirms the formation of rhombohedral perovskite structure in these samples with minor impurity phases. However, the impurity phases of stochiometric NBLTF samples disappear on increasing the sintering temperature from 650°C to 850°C. On other hand, NBLTF samples prepared with mol% excess of Na and Bi have shown pure perovskite structure only at lower sintering temperature 650°C and also at low concentration of La ∼ 1%. Transmission electron microscope investigation shows nano crystalline formation for all NBLTF samples sintered at 850°C. The enhancement in room temperature ferromagnetism is observed in La doped NBTF samples prepared at 850°C by taking stoichiometric amount of Na and Bi during synthesis.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2014

High temperature ferromagnetism in Ni doped ZnO nanoparticles: Milling time dependence

We report on the room temperature ferromagnetism (RT FM) in the Zn{sub 1−x}Ni{sub x}O (x = 0, 0.03, and 0.05) nanoparticles (NPs) synthesized by a ball milling technique. X-ray diffraction analysis confirms the single crystalline ZnO wurtzite structure with presence of small intensity secondary phase related peak which disappear with increasing milling time for Ni doped samples. HRTEM lattice images show that the doped NPs are single crystalline with a dspacing of 2.44 Å. Energy-dispersive X-ray spectroscopy analysis confirms the presence of Ni ions in the ZnO matrix. Magnetic measurement (RT) exhibits the hysteresis loop with saturation magnetization (M{sub s}) of 1.6–2.56 (emu/g) and coercive field (H{sub c}) of 296–322 Oe. M-T measurement shows a Curie temperature of the order of 325°C for 3% Ni doped sample. Micro -Raman studies show doping/disorder induced additional modes at ∼510, 547, 572 cm{sup −1} in addition to 437 cm{sup −1} peak of pure ZnO. UV-Vis absorption spectra illustrate band gap shift due to doping. Alteration of M{sub s} value with the variation of doping concentration and milling time has been studied and discussed.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Half metallic ferromagnetism in alkali metal nitrides MN (M = Rb, Cs): A first principles study

The structural, electronic and elastic properties of two alkali metal nitrides (MN: M= Rb, Cs) are investigated by the first principles calculations based on density functional theory using the Vienna ab-initio simulation package. At ambient pressure the two nitrides are stable in ferromagnetic state with CsCl structure. The calculated lattice parameters are in good agreement with the available results. The electronic structure reveals that these materials are half metallic in nature. A pressure-induced structural phase transition from CsCl to ZB phase is observed in RbN and CsN.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Room temperature ferromagnetism in Co defused CdTe nanocrystalline thin films

Nanocrystalline Co defused CdTe thin films were prepared using electron beam evaporation technique by depositing CdTe/Co/CdTe stacked layers with different Co thickness onto glass substrate at 373 K followed by annealing at 573K for 2 hrs. Structural, morphological and magnetic properties of of all the Co defused CdTe thin films has been investigated. XRD pattern of all the films exhibited zinc blende structure with <111> preferential orientation without changing the crystal structure of the films. The grain size of the films increased from 31.5 nm to 48.1 nm with the increase of Co layer thickness from 25nm to 100nm. The morphological studies showed that uniform texture of the films and the presence of Co was confirmed by EDAX. Room temperature magnetization curves indicated an improved ferromagnetic behavior in the films with increase of the Co thickness.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Half-metallic ferromagnetism in Cr-doped semiconducting Ge-chalcogenide: Density functional approach

A supercell approach has been used to calculate the electronic and magnetic properties of Cr-doped Ge chalcogenide, Ge{sub 1−x}Cr{sub x}Te (x = 0.25 and 0.125). The calculations have been performed using full potential Linear Augmented Plane Wave (FPLAPW) method within generalized gradient approximation (GGA) as exchange-correlation (XC) potential. The calculated results show that the doping of Cr induces the 100% spin polarization at Fermi level (EF) and showed the robust half metallic ferromagnetism in this compound. Thus, the compound at both dopant concentrations behave as dilute magnetic semiconductor (DMS) showing metallic property in majority and semiconducting for minority spin channels which is best suited for spintronic applications. The total magnetic moments of this compound are mainly due to Cr-d states present at E{sup F} with negligible contribution from electronic states of other atoms.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Weak ferromagnetism and nanodimensional ferroelectric domain structure stabilized in the polar phase of Bi{sub 1−x}Nd{sub x}FeO{sub 3} multiferroics via Ti doping

Crystal structure, microstructure, local ferroelectric, and magnetic properties of the Bi{sub 0.9}Nd{sub 0.1}Fe{sub 1−x}Ti{sub x}O{sub 3} samples have been investigated at room temperature to reveal the effect of Ti{sup 4+} doping on the multiferroic behavior of the lanthanide-modified compound representing a polar (space group R3c) antiferromagnetic phase of the Bi{sub 1−x}Ln{sub x}FeO{sub 3} perovskites. Ti doping results in a gradual suppression of the rhombohedral distortions, however, symmetry of the crystal structure remains the same in the entire concentration range allowing the single-phase perovskites to be obtained (x ≤ 0.08). The doping tends to reduce existing lone-pair cation-driven polar displacements, thus giving rise to a decrease of the ferroelectric polarization in the Bi{sub 0.9}Nd{sub 0.1}Fe{sub 1−x}Ti{sub x}O{sub 3} (x→0.08) series. A drastic (from ∼10 μm for x = 0 to ∼1 μm for 0.02 ≤ x ≤ 0.08) decrease of the average grain size induced by the doping is accompanied by the formation of a ferroelectric domain structure with the average domain width of ∼40 nm. Finally, the doping was shown to induce an antiferromagnetic to weak ferromagnetic transformation. The maximum remanent magnetization observed in the Bi{sub 0.9}Nd{sub 0.1}Fe{sub 1−x}Ti{sub x}O{sub 3} series at x ∼ 0.05 coincides with the locked magnetization releasing upon the magnetic field-induced suppression of the magnetic cycloid in pure BiFeO{sub 3}.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Phonons and magnetic excitation correlations in weak ferromagnetic YCrO{sub 3}

Here, we report the temperature dependent Raman spectroscopic studies on orthorhombically distorted perovskite YCrO{sub 3} over a temperature range of 20–300 K. Temperature dependence of DC-magnetization measurements under field cooled and zero field cooled protocols confirmed a Néel transition at T{sub N} ∼ 142 K. Magnetization isotherms recorded at 125 K show a clear loop opening without any magnetization saturation up to 20 kOe, indicating a coexistence of antiferromagnetic (AFM) and weak ferromagnetic (WFM) phases. Estimation of exchange constants using mean-field approximation further confirm the presence of a complex magnetic phase below T{sub N}. Temperature evolution of Raman line-shape parameters of the selected modes (associated with the octahedral rotation and A(Y)-shift in the unit-cell) reveal an anomalous phonon shift near T{sub N}. An additional phonon anomaly was identified at T{sup *} ∼ 60 K, which could possibly be attributed to the change in the spin dynamics. Moreover, the positive and negative shifts in Raman frequencies between T{sub N} and T{sup *} suggest competing WFM and AFM interactions. A close match between the phonon frequency of B{sub 3g} (3)-octahedral rotation mode with the square of sublattice magnetization between T{sub N} and T{sup *} is indicative of the presence of spin-phonon coupling in multiferroic YCrO{sub 3}.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗