Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “Device”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 775 records · Page 43
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Impact of direct exchange coupling via the insulator on the magnetic tunnel junction based molecular spintronics devices with competing molecule induced inter-electrode coupling

The magnetic tunnel junction (MTJ) based molecular spintronics device (MTJMSD) approach is suitable for mass production. This approach provides solutions to fabrication difficulties related to reliably connecting molecular device elements to the ferromagnets (FMs). To producing MTJMSD, the molecular channels are bridged across the insulator of an MTJ testbed with exposed side edges. In an MTJMSD, two FMs are simultaneously connected by an insulator film and the molecular channels along the exposed sides. In our prior experimental studies, we observed that molecules could produce strong coupling between ferromagnets in the presence of the competing coupling via an insulator. In this paper, our Monte Carlo Simulation (MCS) was used to study the impact of coupling variation via insulator (a.k.a. Ji) on the magnetic properties of an MTJMSD. We studied the effect of Ji while varying the molecule induced antiferromagnetic exchange coupling. The ferromagnetic or antiferromagnetic nature and magnitude of Ji determined the resultant effect. Antiferromagnetic Ji enhanced the pre-existing antiferromagnetic molecular coupling effect. Ferromagnetic Ji competed with the opposite nature of antiferromagnetic molecular coupling. Our MCS may help to understand the impact of insulator thickness and defects on the molecular spintronics device performance and design process.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Thermal scanning probe and laser lithography for patterning nanowire based quantum devices

Semiconductor nanowire (NW) quantum devices offer a promising path for the pursuit and investigation of topologically-protected quantum states, and superconducting and spin-based qubits that can be controlled using electric fields. Theoretical investigations into the impact of disorder on the attainment of dependable topological states in semiconducting nanowires with large spin–orbit coupling and g-factor highlight the critical need for improvements in both growth processes and nanofabrication techniques. In this work, we used a hybrid lithography tool for both the high-resolution thermal scanning probe lithography and high-throughput direct laser writing of quantum devices based on thin InSb nanowires with contact spacing of 200 nm. Electrical characterization demonstrates quasi-ballistic transport. The methodology outlined in this study has the potential to reduce the impact of disorder caused by fabrication processes in quantum devices based on 1D semiconductors.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Fascinating physics at the edge of magnetic fusion devices

Abstract The physics of the processes at the edge of magnetic fusion devices is multifaceted and exhibits complex, nonlinear synergistic effects. Even though this region occupies only a small portion of the whole device, it plays a crucial role in overall plasma confinement, heat exhaust, and plasma–wall interactions. The latter affects not only the performance but also the lifetime of plasma-facing components and therefore remains an outstanding challenge for future fusion reactors. At the edge of fusion devices, researchers are dealing with phenomena including classical and anomalous plasma transport, atomic physics effects, and physics of plasma-facing material under strong irradiation by particle and energy fluxes. The diversity of edge physics makes it particularly attractive for young scientists. Working in this field, they can find endless possibilities to demonstrate their talents and creativity. This short review describes just some of the basic scrape-off layer and divertor plasma phenomena including divertor plasma detachment, intermittent bursts of anomalous cross-field plasma transport, plasma–material interactions, and dust in fusion plasmas, which are of particular interest in relation to fusion reactors.

Physics↗
DOE OSTI2025

Multi-device analysis of energy loss duration and pellet penetration with implications for shattered pellet injection in ITER

A robust disruption mitigation system (DMS) requires accurate characterization of key disruption timescales, one of the most notable being the thermal quench (TQ). Recent modeling of shattered pellet injection (SPI) into ITER plasmas, using JOREK and INDEX, suggests long TQ durations (6–10 ms) and slow cold front propagation due to the large plasma size. If validated, these predictions would have an impact on the desired pellet parameters and mitigation strategies for the ITER DMS. To resolve these questions, a database of SPI experiments from several small-to-large sized devices (J-TEXT, KSTAR, AUG, DIII-D, and JET) has been compiled under the auspices of the International Tokamak Physics Activity MHD, disruptions, and control topical group. Analysis of the energy loss duration (proxy for the TQ duration) with machine size is presented for both mixed neon/deuterium (Ne/D) SPI and pure deuterium (D) SPI. Several metrics for the energy loss onset (e.g. soft x-ray signal drop, I p dip, and radiation flash) were considered as the conventional metric, electron cyclotron emission, is often cut-off during SPI. Several scalings with different onset metrics showed an increase in energy loss duration with machine size. The energy loss duration was additionally shown to be a function of the ratio between the number of SPI neon atoms injected and the stored energy. Analysis of the pellet shard position relative to the cold front found that in larger devices, pellets are typically found inboard of the q = 2 surface at the energy loss onset. Lastly, the delay between the pellet shards hitting the q = 2 surface and the energy loss onset was additionally found to increase with machine size. This suggests that the pellet shards in large devices will penetrate faster and further than the cooling front.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2024

Diffusive and ballistic transport in thin InSb nanowire devices using a few-layer-graphene-AlO x gate

Abstract Quantum devices based on InSb nanowires (NWs) are a prime candidate system for realizing and exploring topologically-protected quantum states and for electrically-controlled spin-based qubits. The influence of disorder on achieving reliable quantum transport regimes has been studied theoretically, highlighting the importance of optimizing both growth and nanofabrication. In this work, we consider both aspects. We developed InSb NW with thin diameters, as well as a novel gating approach, involving few-layer graphene and atomic layer deposition-grown AlO x . Low-temperature electronic transport measurements of these devices reveal conductance plateaus and Fabry–Pérot interference, evidencing phase-coherent transport in the regime of few quantum modes. The approaches developed in this work could help mitigate the role of material and fabrication-induced disorder in semiconductor-based quantum devices.

36 MATERIALS SCIENCE↗
DOE OSTI2020

A novel two-layer-integrated microfluidic device for high-throughput yeast proteomic dynamics analysis at the single-cell level

Abstract Current microfluidic methods for studying multicell strains (e.g., m-types) with multienvironments (e.g., n-types) require large numbers of inlets/outlets (m*n), a complicated procedure or expensive machinery. Here, we developed a novel two-layer-integrated method to combine different PDMS microchannel layers with different functions into one chip by a PDMS through-hole array, which improved the design of a PDMS-based microfluidic system. Using this method, we succeeded in converting 2 × m × n inlets/outlets into m + n inlets/outlets and reduced the time cost of loading processing (from m × n to m) of the device for studying multicell strains (e.g., m-types) in varied multitemporal environments (i.e., n-types). Using this device, the dynamic behavior of the cell-stress-response proteins was studied when the glucose concentration decreased from 2% to a series of lower concentrations. Our device could also be widely used in high-throughput studies of various stress responses, and the new concept of a multilayer-integrated fabrication method could greatly improve the design of PDMS-based microfluidic systems.

Chen, Kaiyue↗
DOE OSTI2026

Coupling of Klein-Andreev resonant states in B⁢i 2 ⁢S⁢r 2 ⁢CaC⁢u 2 ⁢O 8+𝑥 -graphene-B⁢i 2⁢ S⁢r 2 ⁢CaC⁢u 2 ⁢O 8+𝑥 devices

Quantum devices require coherent coupling over macroscopic distances. Recently, resonances due to Klein tunneling and Andreev reflection states (KARS) have been observed in a naturally occurring p-n junction at the interface between B⁢i 2 ⁢S⁢r 2 ⁢CaC⁢u 2 ⁢O 8+𝑥 (BSCCO), a high−⁢𝑇 c superconductor (HTS), and graphene. The resonances appear as conductance oscillations with gating. Here, in this study, we show coupling between the KARS in BSCCO-graphene-BSCCO devices of varying separation (L). The coupling is evidenced by a power-law decay of resonance period as L increases from tens of nanometers to microns. These results demonstrate the long-distance coupling of KARS cavities in graphene-HTS junctions. The length dependence seen in experiments is supported by single-particle spectral functions which show KARS are coupled by transport modes in graphene. The strong coupling between KARS in BSCCO-graphene-BSCCO devices showcases the possibility of HTS-graphene junctions for quantum circuits and unconventional Josephson junctions.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Dynamic attenuation scheme in measurement-device-independent quantum key distribution over turbulent channels

Measurement-device-independent quantum key distribution (MDI QKD) offers great security in practice because it removes all detector side channels. However, conducting MDI QKD over free-space channels is challenging. One of the largest culprits is the mismatched transmittance of the two independent turbulent channels causing a reduced Hong-Ou-Mandel visibility and thus a lower secret key rate. Here we introduce a dynamic attenuation scheme, where the transmittance of each of the two channels is monitored in real time by transmitting bright light pulses from each users to the measurement device. Based on the measured channel transmittance, a suitable amount of attenuation is introduced to the low-loss channel at the measurement device. Our simulation results show a significant improvement of QKD performance, especially when using short raw keys.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2020

Quantifying Large Lattice Relaxations in Photovoltaic Devices

Temporal variations of Cu(In,Ga)Se 2 photovoltaic device properties during light exposure at various temperatures and voltage biases for times up to 100 h are analyzed using the kinetic theory of large lattice relaxations. Open-circuit voltage and p-type doping increased with charge injection and decreased with temperature at low injection conditions. Furthermore, lattice relaxation can account for both trends and activation energies extracted from the data are approximately 0.9 and 1.2 eV for devices with lower and higher sodium content, respectively. In these devices, increased sodium content resulted in higher initial p-type doping with greater stability. First-principles calculations providing revised activation energies for the (V Se -V Cu ) complex suggest that this defect does not account for the metastability observed here.

14 SOLAR ENERGY↗
DOE OSTI2023

Leakage Reduces Device Coherence Demands for Pulse-Level Molecular Simulations

Quantum simulation on noisy intermediate-scale quantum devices is severely limited by short qubit coherence times. A variational pulse-shaping algorithm known as ctrl-VQE was recently proposed to address this issue by eliminating the need for parameterized quantum circuits, which lead to long state preparation times. Here, in this study, we find the fastest possible pulses that prepare target molecular wave functions for a given device Hamiltonian describing coupled transmon qubits using simulations. We find that the resulting time-optimal pulses develop a bang-bang form consistent with Pontryagin’s maximum principle. We further investigate how the minimal state preparation time is impacted by the number of energy levels active in the transmon simulations. We find that leakage outside the computational subspace (something that is usually considered problematic) speeds up the state preparation, further reducing device coherence-time demands. Our analysis reveals that this speedup is due to both an enlarged solution space of target wave functions and the appearance of additional channels connecting initial and target states.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Infrared Light-Emitting Devices from Antenna-Coupled Luttinger Liquid Plasmons In Carbon Nanotubes

Electrically driven light-emitting devices provide highly energy-efficient lighting at visible wavelengths, and they have transformed photonic and electronic lighting applications. Efficient infrared light-emitting devices, however, have been challenging because band gap emission from semiconductors becomes inefficient in the mid-infrared to far-infrared spectral range. Here, in this paper, we investigate infrared light-emitting devices (IRLEDs) based on Luttinger liquid (LL) plasmons in one-dimensional (1D) metallic carbon nanotubes. Elementary excitations in LL are characterized by collective charge and spin excitations, i.e., plasmons and spinons. Consequently, electrons injected into the nanotubes transform efficiently into LL plasmons, a hybrid excitation of electromagnetic fields and electrons. We design nanoantennas coupled to the carbon nanotube to radiate LL plasmons into the far field. LL-based IRLEDs can be designed to selectively emit at wavelengths across the far- and mid-infrared spectra. An electrical-to-optical power conversion efficiency up to 3.2% may be achieved. Such efficient and narrowband LL-based IRLEDs can enable novel infrared nanophotonic applications.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Electronegative metal dopants improve switching variability in Al 2 ⁢O 3 resistive switching devices

Resistive random-access memories are promising for nonvolatile memory and brain-inspired computing applications. High variability and low yield of these devices are key drawbacks hindering reliable training of physical neural networks. In this paper, we show that doping an oxide electrolyte, Al 2 ⁢O 3 , with electronegative metals makes resistive switching significantly more reproducible, surpassing the reproducibility requirements for obtaining reliable hardware neuromorphic circuits. Based on density functional theory calculations, the underlying mechanism is hypothesized to be the ease of creating oxygen vacancies in the vicinity of electronegative dopants due to the capture of the associated electrons by dopant midgap states and the weakening of Al-O bonds. These oxygen vacancies and vacancy clusters also bind significantly to the dopant, thereby serving as preferential sites and building blocks in the formation of conducting paths. Throughout this work, we validate this theory experimentally by implanting different dopants over a range of electronegativities in devices made of multiple alternating layers of Al 2 ⁢O 3 and WN and find superior repeatability and yield with highly electronegative metals, Au, Pt, and Pd. These devices also exhibit a gradual SET transition, enabling multibit switching that is desirable for analog computing.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Real-Time Lifetime Prediction of Semiconductor Devices Using Hardware-in-the-Loop

This paper presents a unique approach to enable real-time lifespan prediction of semiconductor power modules using a Hardware-in-the-Loop (HIL) system. By integrating the module's overall loss characteristics-specifically switching and conduction losses-with a thermoelectric model of the thermal management system, this research demonstrates that the model can dynamically estimates the junction temperature profile of the semiconductor devices in response to a changing torque demand profile for the motor drive system. This capability enables continuous monitoring of the module's operational time and cumulative stress induced on the devices to compute accumulated remaining lifetime or time-to-failure (TTF). This study provides an architectural framework for the HIL system with high-fidelity component models of multiple physical domains, allowing simulation of dynamic behaviors of a closely-coupled motor drive system. The advanced real-time computation and measurement functionalities of the HIL system allow for both dynamic lifetime calculations based on simulated data and aggregate lifetime predictions utilizing historical data. Moreover, this paper details an algorithm that not only computes cumulative damage but also synthesizes these data into a comprehensive aggregated lifetime metric. This methodology can enhance the maintenance scheduling strategies and operational reliability of semiconductor devices in critical applications, ultimately extending their service life while optimizing performance.

hardware-in-the-loop (HIL)↗
DOE OSTI2023

Recent Advancements in Reconfigurable mmWave Devices Based on Phase-Change and Metal Insulator Transition Materials

Chalcogenide Phase Change Materials (PCM) and metal insulator transition (MIT) materials are a group of materials that are capable of switching between low resistance and high resistance states. These emerging materials have been widely used in optical storage media and memory devices. Over the past recent years, there have been interests in exploiting the PCM and MIT materials, especially germanium antimony telluride (GST) alloys and vanadium dioxide (VO 2 ), for radio frequency (RF) applications. The PCM and MIT-based RF devices are expected to bridge the gap between semiconductor switches and microelectromechanical system (MEMS) switches as they combine the low insertion loss performance of MEMS technology and the small size and reliability performance of semiconductor technology. This article presents an overview of the PCM and MIT materials for RF circuits and discusses the recent advancements in reconfigurable millimeter-wave (mmWave) devices based on PCM and MIT materials in depth.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Self-Cooling Multiferroic Magnetic Devices

Increasing switching frequency reduces magnetic volume, but conventional ferrites, used from tens to hundreds of kilohertz, cannot sustain the temperature and frequency ranges demanded by current and emerging wide bandgap and ultrawide bandgap devices. Here, this work presents a novel magnetic material architecture combining nanocrystalline magnetic material and multiferroic layers for megahertz power conversion. The high saturation flux density of nanocrystalline alloys supports miniaturization but is traditionally constrained by excessive losses above 10 kHz. A revolutionary multiferroic material with solid-state cooling via caloric materials is defined that will enable the next generation of magnetic devices for wide-bandgap-integrated designs. This letter highlights the fundamental physics behind this capability alongside early development of a finite element analysis for the multiferroic-based magnetic device using ANSYS, showing that the core achieves more uniform thermal distribution and reduces peak temperature by 9 ° C compared to conventional ferrites.

Soft magnetic materials↗
DOE OSTI2022

RanCompute: Computational Security in Embedded Devices via Random Input and Output Encodings

An embedded device in an insecure environment is subject to additional security risk through capture and reverse-engineering by a capable adversary. If this device contains a microchip performing sensitive computations, capture of the chip may leak functionality to an adversary. In this paper we propose a novel method in which we randomly encode the input operands and the outputs of a computation, thus not revealing the arithmetic operations being performed. The operations are sequenced in a graph representing the overall application. Once the initialization values are overwritten and lost, the results of these computations are indecipherable by the device performing the calculations as well as by any adversary. The result is transmitted back to a secure server which has stored the initialization values and so can decode the results which appear random to the adversary.

Embedded computing↗
DOE OSTI2025

Impact of Geomagnetic Induced Current Neutral Blocking Devices on Distance Relays in Sub-transmission Networks with IBR

Geomagnetically induced currents (GICs) can flow through transmission lines during geomagnetic disturbances, such as solar flares or coronal mass ejections. These currents can cause problems like transformer saturation and equipment damage. The most common method of mitigating GICs involves installing GIC neutral blocking devices (NBDs) in transformer neutrals. However, the wide application of capacitive GIC blocking devices may have unintended adverse effects on other devices, such as distance protection relays. As the number of inverter-based resources being connected to the transmission and sub-transmission systems increases, the likelihood of a sub-transmission line protected by a distance relay connected to a transformer with NBDs is increasing. Therefore, distance relays fed by IBRs and transmission lines with GIC-NBDs must be studied. This paper studies the effect of GIC-NBDs on a 69kV sub-transmission line of various lengths fed by a 25 MVA IBR and synchronous source. This work focused on the behavior of the GIC-NBDs using the measured apparent phase-to-ground and phase-to-phase impedance calculated by the relay and the source impedance ratio (SIR) during various electrical faults.

Patel, Trupal R [Sandia National Laboratories (SNL↗
DOE OSTI2022

Vortex Induced Vibration Test of the WITT Device in a Tidal Channel

Fluid flow around a bluff body causes vibrations as the boundary layer separates and vortices are shed. This phenomenon, called vortex induced vibration (VIV), is minimized in most engineering applications, but can be utilized for power generation. Vortex induced vibration has potential for energy harvesting in low velocity water flows and therefore could open many locations to marine renewable energy. Here we present the results of a field test of a device that utilizes VIV to harvest energy from flow in a tidal channel. The pendulum-type device has been designed to generate electricity from motion around and along three axes. It is named the Whatever Input to Torsion Transfer (WITT) energy device and in this test is mounted on top of a pipe. During the field test, the WITT generated electricity at flow velocities from 0.27 to 2.82 m/s. The field test has proven that the WITT can utilize VIV to produce electricity and charge a battery in tidal flows with velocities as low as 0.27 m/s. In the future, the electricity could be used to charge a battery for ocean observation instruments such as temperature and nitrate sensors. In-situ power generation by the WITT would extend deployment times and increase the frequency of measurements.

Branch, Ruth A.↗