Unique role of dimeric carbon precursors in graphene growth by chemical vapor deposition
Not Available
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
SEARCH · Engineering Papers
Results for “Crystal Growth”
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Nanostructural evolution of Al(OH)3 gel formed by the cubic and orthorhombic ye'elimite clinkers of calcium sulfoaluminate cements in an ultra-wide hydration temperature range
This paper investigated the influence of hydration temperature on the nanostructure of the AH{sub 3} phase formed in calcium sulfoaluminate cements. Orthorhombic ye'elimite (st-ye'elimite) and cubic ye'elimite (ss-ye'elimite) were hydrated in an ultra-wide temperature range (5–220 °C). Results showed that the AH{sub 3} phase formed by ss-ye'elimite was always microcrystalline in nature at various curing temperatures (5–130 °C), and transformed into the AlOOH phase at 150 °C and above. However, the AH{sub 3} phase formed by st-ye'elimite grew from a microcrystal to a favorable crystal as the temperature increased, and transformed into the AlOOH phase at 170 °C and above. The nanostructure of hydration products was further investigated using TEM/SAED analysis together with FE-SEM images, directly evidencing that the formed AFm-12 phase was single-crystal in nature, and the formed AH{sub 3} phase was microcrystalline at low temperatures and grew into single-crystal hexagonal prisms with the preferred growth direction along [001] direction at high temperatures.
36 MATERIALS SCIENCE↗
Synchrotron X-ray topography characterization of high quality ammonothermal-grown gallium nitride substrates
Abstract not provided
Liu, Yafei↗
Crystallization pathways and interfacial drivers for the formation of hierarchical architectures
The development of structural hierarchy on various length scales during crystallization process is ubiquitous in biological systems and is also observed in synthetic nanomaterials. The driving forces for the formations of complex architectures range from local interfacial interactions, that modify interfacial speciation, local supersaturation, and nucleation barriers, to macroscopic interparticle forces. Although it is enticing to interpret the formation of hierarchical architectures as the assembly of independently nucleated building blocks, often crystallization pathways follow monomer-by-monomer addition with structural complexity arising from interfacial chemical coupling and strongly correlated fluctuation dynamics in the electric double layers. Here, the mechanism of the development of structural hierarchy through heterogeneous nucleation, coupled interfacial nucleation and assembly, and oriented attachment of independently nucleated particles is discussed. In this article, the emphasis is made on the discussion of the underlying interfacial forces and chemical coupling that drives crystallization pathways towards the formation of structural hierarchy.
36 MATERIALS SCIENCE↗
Synthesis and structural characterization of the new Zintl phases Ba 3 Cd 2 P 4 and Ba 2 Cd 2 P 3 . Rare example of small gap semiconducting behavior with negative thermopower within the range 300 K-700 K
The new Zintl phases Ba 3 Cd 2 P 4 and Ba 2 Cd 2 P 3 have been synthesized using Pb flux, which allowed for the growth of 4-5 mm large crystals. The structures were determined utilizing single-crystal X-ray diffraction methods. Both compounds crystalize in the monoclinic crystal system (space group C2/m (No. 12)) and their structures are closely related. The structure of Ba 3 Cd 2 P 4 can be seen as being comprised of divalent Ba atoms and conjoined CdP 4 tetrahedra in the form of [Cd 2 P 4 ] 6- layers. Within the layers, homoatomic P–P bonds are present, which if cleaved, leave two infinite [CdP 3 ] 7- chains running along the crystallographic b-axis. The other structure, that of Ba 2 Cd 2 P 3 , can be rationalized as also having divalent Ba atoms and conjoined CdP4 tetrahedra in the form of [Cd 2 P 3 ] 6- layers. These layers, again, can be visualized as chains that run down the crystallographic b-axis, which are further connected by P-P dimers. Electronic band structure calculations show that each structure has an optimal number of valence electrons, and therefore conform to the Zintl-Klemm concept. Accordingly, the two compounds can be considered small band gap semiconductors, with band gaps of ca. 0.1 eV and 0.6 eV for Ba3Cd2P4 and Ba 2 Cd 2 P 3 , respectively. Electrical resistivity measurements show that Ba3Cd2P4 displays a large resistivity value at room temperature and an experimental band gap of ca. 0.05 eV, which fits reasonably well with the theoretical predictions. Thermopower measurements show that throughout the temperature range 300 K-700 K, Ba 3 Cd 2 P 4 displays a negative Seebeck coefficient. Here, the extremum value of -84 μV is reached at 630 K, suggestive of an n-type semiconductor, a rarity among Zintl phases.
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
Nucleation-controlled growth of superior lead-free perovskite Cs 3 Bi 2 I 9 single-crystals for high-performance X-ray detection
The organic-inorganic hybrid lead halide perovskites have emerged as a series of star materials for solar cells, lasers and detectors. However, the issues raised by the toxic lead element and marginal stability due to the volatile organic components have severely limited their potential applications. In this work, we develop a nucleation-controlled solution method to grow large size high-quality Cs 3 Bi 2 I 9 perovskite single crystals (PSCs). Using the technique, we harvest some centimeter-sized single crystals and achieved high device performance. We find that X-ray detectors based on PSCs exhibit high sensitivity of 1652.3 μC Gy air -1 cm -2 and very low detectable dose rate of 130 nGy air s -1 , both desired in medical diagnostics. In addition, its outstanding thermal stability inspires us to develop a high temperature X-ray detector with stable response at up to 100 °C. Furthermore, PSCs exhibit high X-ray imaging capability thanks to its negligible signal drifting and extremely high stability.
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
Suppression of ferromagnetic correlations in hole-doped SrCo 2 As 2
We report the growth of high-quality single crystals of hole-doped composition Sr 0.95 K 0.05 Co 2 As 2 and present an investigation of its structural, electronic, thermal, and magnetic properties. Our results show that hole doping leads to a substantial suppression of ferromagnetic (FM) correlations present in SrCo 2 As 2 leading to nearly isotropic magnetic susceptibilities χ ab,c (T) of Sr 0.95 K 0.05 Co 2 As 2 . The presence of FM fluctuations is considered one of the detrimental reasons why SrCo 2 As 2 does not achieve a superconducting ground state despite having a precursor for it in the form of stripe-like antiferromagnetic fluctuations. The suppression of FM fluctuations leads to qualitative similarities between the properties of hole-doped SrCo 2 As 2 and the end member of superconducting 122 iron-arsenide family KFe 2 As 2 . Our results also infer the presence of strongly correlated electronic states in Sr 0.95 K 0.05 Co 2 As 2 . Further, they show that the electronic structure of SrCo 2 As 2 as well as this hole-doped composition is exceptionally unstable in the vicinity of Fermi level EF for small alterations in the structural parameters and sensitively depends upon the details of simulation.
36 MATERIALS SCIENCE↗
Robust antiferromagnetism in Y 2 Co 3
We report on a solution-growth based method to synthesise single crystals of Y 2 Co 3 and on its structural and magnetic properties. We find that Y 2 Co 3 crystallizes in the La 2 Ni 3 -type orthorhombic structure with space group Cmce (No. 64), with Co forming distorted kagome lattices. Y 2 Co 3 orders antiferromagnetically below TN=252 K. Magnetization measurements reveal that the moments are primarily aligned along the b axis with evidence for some canting. Band-structure calculations indicate that ferromagnetic and antiferromagnetic orders are nearly degenerate, at odds with experimental results. Magnetization measurements under pressure up to 1 GPa reveal that the Néel temperature decreases with the slope of -1.69 K/GPa. We observe a field-induced spin-flop transition in the magnetization measurements at 1.5 K and 21 T with magnetic field along the b direction. The magnetization is not saturated up to 35 T, indicating that the antiferromagnetic ordering in Y 2 Co 3 is quite robust, which is surprising for such a Co-rich intermetallic.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Fermi surface topology and magnetotransport properties of superconducting Pd 3 Bi 2 Se 2
Pd 3 Bi 2 Se 2 is a rare realization of a superconducting metal with a non-zero topological invariant. Here, in this study, we report the growth of high-quality single crystals of layered Pd 3 Bi 2 Se 2 with a superconducting transition at T c ≈ 0.80 K and upper critical fields of ~10 mT and ~5 mT for the in plane and out-of-plane directions, respectively. Our density functional theory (DFT) calculations reveal three pairs of doubly degenerate bands crossing the Fermi level all displaying clear three dimensional dispersion consistent with the overall low electronic anisotropy (<2). The multiband electronic nature of Pd 3 Bi 2 Se 2 is evident in magneto-transport measurements, yielding a sign changing Hall resistivity at low temperatures. The magnetoresistance is non-saturating and follows Kohler’s scaling rule. We interpret the magneto-transport data in terms of open orbits that are revealed in the DFT calculated Fermi surface. de Haas-van Alphen (dHvA) oscillation measurements using torque magnetometry on single crystals yield four frequencies for out-of-plane fields: F α = (150 ± 26) T, F β = (293 ± 10) T, F γ = (375 ± 20) T and F η = (1017 ± 12) T, with the low frequency dominating the spectrum. Through the measurement of angular dependent dHvA oscillations and DFT calculations we identify the F α frequency with an approximately ellipsoidal electron pocket centered on the L 2 point of the Brillouin zone. Lifshitz-Kosevich analysis of the dHvA oscillations reveals a small cyclotron effective mass m* = (0.11 ± 0.02)m 0 and a nontrivial Berry phase for the dominant orbit. The presence of nontrivial topology in a bulk superconductor positions Pd 3 Bi 2 Se 2 as a potential candidate for exploring topological superconductivity.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
The Modified Void Nucleation and Growth Model (MNAG) for Damage Evolution in BCC Ta
A void coalescence term was proposed as an addition to the original void nucleation and growth (NAG) model to accurately describe void evolution under dynamic loading. The new model, termed as modified void nucleation and growth model (MNAG model), incorporated analytic equations to explicitly account for the evolution of the void number density and the void volume fraction (damage) during void nucleation, growth, as well as the coalescence stage. The parameters in the MNAG model were fitted to molecular dynamics (MD) shock data for single-crystal and nanocrystalline Ta, and the corresponding nucleation, growth, and coalescence rates were extracted. The results suggested that void nucleation, growth, and coalescence rates were dependent on the orientation as well as grain size. Compared to other models, such as NAG, Cocks–Ashby, Tepla, and Tonks, which were only able to reproduce early or later stage damage evolution, the MNAG model was able to reproduce all stages associated with nucleation, growth, and coalescence. The MNAG model could provide the basis for hydrodynamic simulations to improve the fidelity of the damage nucleation and evolution in 3-D microstructures.
36 MATERIALS SCIENCE↗
Frustrated Magnetism and Ferroelectricity in a Dy 3+ -Based Triangular Lattice
Triangular lattice magnets have attracted extensive research interest because they are potential hosts for geometrically frustrated magnetism and strong quantum fluctuations. Here, utilizing a laser floating zone technique, we report the first-time successful growth of a DyInO 3 sizable crystal, which contains Dy3+-based triangular layers. The fine-tuning of Indium stoichiometry was found to be the key factor in the stabilization of the desired hexagonal phase. The X-ray diffraction study of the crystal structure reveals a non-centrosymmetric P6 3mc space group. Switchable polarization, i.e., ferroelectricity, and ferroelectric domain configuration are experimentally demonstrated at room temperature. Anisotropic magnetic and thermodynamic measurements unveil antiferromagnetic interactions, the absence of long-range ordering down to 0.1 K, and a possible doublet ground state, indicating a strongly frustrated magnetism. Our findings suggest that the DyInO 3 crystal is an excellent platform for studying emergent phenomena and their interplay with coherent topological defects in the quantum realm.
36 MATERIALS SCIENCE↗
Process for large-scale ammonothermal manufacturing of semipolar gallium nitride boules
Methods for large-scale manufacturing of semipolar gallium nitride boules are disclosed. The disclosed methods comprise suspending large-area single crystal seed plates in a rack, placing the rack in a large diameter autoclave or internally-heated high pressure apparatus along with ammonia and a mineralizer, and growing crystals ammonothermally. A bi-faceted growth morphology may be maintained to facilitate fabrication of large area semipolar wafers without growing thick boules.
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
Investigating the limits of superconductivity in UTe 2
Abstract Spin-triplet bulk superconductors are a promising route to topological superconductivity, and UTe 2 is a recently discovered contender. The superconducting properties of UTe 2 , however, vary substantially as a function of the synthetic route, and even nonsuperconducting single crystals have been reported. To understand the driving mechanism suppressing superconductivity, we investigate UTe 2 single crystals grown close to the nonsuperconducting boundary (growth temperature ∼710 ∘ C) through a combination of thermodynamic and x-ray diffraction measurements. Specific heat measurements reveal a sharp decrease in the superconducting volume and a concomitant increase in the residual specific heat coefficient close to the nonsuperconducting boundary. Notably, these crystals are inhomogeneous and show an apparent double transition in specific heat measurements, similar to samples grown at much higher temperatures (∼1000 ∘ C). Our single crystal x-ray diffraction measurements reveal that there are two important tuning parameters: uranium vacancies and the atomic displacement along the c axis, which shows a twofold increase in samples with a reduced superconducting volume. Our results highlight the key role of local disorder along the uranium-uranium dimers and suggest that the apparent double superconducting transition is more likely to emerge close to the superconducting limits of UTe 2 .
Weiland, A. (ORCID:0000000171983559)↗
Gas-mediated trace element incorporation into rhyolite-hosted topaz: A synchrotron microbeam XAS study
Magmatic gas exsolving during late-stage cooling of shallow magmas has been considered an important facilitator of low-pressure alteration and metal transport. However, the chemical properties of such gas, particularly its metal transport mechanisms and capacity, remain elusive. Trace elements in minerals produced by gas-mediated surface reaction or precipitation from gas capture details of gas composition and reaction pathways. However, interpretation of mineral trace element contents is dependent on understanding crystallographic controls on gas/mineral partitioning. Here, this work investigates the structural accommodation of As, Mn, Ga, Ge, Fe, and Ti in vapor-deposited topaz of vesicular topaz rhyolite from the Thomas Range, Utah, through single-crystal synchrotron microbeam X-ray techniques on picogram quantities of those trace elements. X-ray absorption near edge structure (XANES) data indicates that these elements are incorporated into topaz as As 5+ , Fe 3+ , Mn 3+ , Ti 4+ , Ga 3+ , and Ge 4+ . Extended X-ray absorption fine structure (EXAFS) analysis for these trace elements, compared to EXAFS of structural Al and Si, reveals that As 5+ and Ge 4+ are incorporated directly into the tetrahedral site of the topaz structure, with the octahedral site accommodating Mn 3+ , Fe 3+ , Ga 3+ , and Ti 4+ . For As 5+ and Fe 3+ , the structural impact of substitution extends to at least second neighbors (other elements were only resolvable to first neighbors). Further interpretation of the EXAFS results suggests that the substitution of Ti 4+ results in increased distortion of the octahedral site, while the other trace elements induce more uniform expansion correlating in magnitude to their ionic radius. Comparison of quantified X-ray fluorescence (XRF) data for two topaz crystals from this rhyolite reveals variable trace element concentrations for As 5+ , Fe 3+ , Ga 3+ , and Ti 4+ , reflective of a source gas undersaturated in these trace elements changing in concentration over the period of topaz deposition. The identical Ge 4+ content of the two topaz crystals suggests that Ge 4+ in the gas was buffered by the growth of another Ge 4+ -bearing phase, such as quartz. The very low Mn 3+ content in the topaz crystals does not reflect the abundance of Mn 3+ in the gas (saturation of Mn is evidenced by coexisting bixbyite). Instead, it suggests a strong Jahn-Teller inhibitory effect to the substitution of Mn 3+ for Al 3+ in the distorted octahedral site of topaz. It is proposed that exsolution of an HF-enriched gas from cooling rhyolitic magma led to local scouring of Al, Si, and trace metals from the magma. Once topaz crystals nucleated, self-catalyzed reactions that recycle HF led to continued growth of topaz.
36 MATERIALS SCIENCE↗
Growth of Hexagonal Boron Nitride from Molten Nickel Solutions: A Reactive Molecular Dynamics Study
Metal flux methods are excellent for synthesizing high-quality hexagonal boron nitride (hBN) crystals, but the atomic mechanisms of hBN nucleation and growth in these systems are poorly understood and difficult to probe experimentally. Here, we harness classical reactive molecular dynamics (ReaxFF) to unravel the mechanisms of hBN synthesis from liquid nickel solvent over time scales up to 30 ns. These simulations mimic experimental conditions by including relatively large liquid nickel slabs containing dissolved boron and a molecular nitrogen gas phase. Overall, the reaction takes place almost exclusively on the surface of the liquid nickel, owing to the low solubility of nitrogen in bulk nickel and the intermediate species’ preference for the metal–gas interface. The formation of hBN invariably begins by reaction of dinitrogen with nickel-solvated boron atoms at the surface, forming intermediate N–N–B species, which typically evolve into B–N–B units through a short-lived intermediate where a single nitrogen atom is coordinated by one nitrogen and two boron atoms. The resulting B–N–B units, in turn, coalesce with growing hBN nuclei and carry nitrogen between hBN nanocrystals in an Ostwald ripening process. The amount of hBN produced on the tens of nanosecond time scale depends critically on the boron concentration, while having a much weaker dependence on the N 2 pressure for the regime considered (N 2 pressures of 2.5–10 MPa, Ni–B solutions with 6–12% boron by atom fraction). The highest rate of hBN formation occurs at the lowest temperature considered (1750 K, just above the melting point of nickel), while no hBN sheets are formed at 2000 K or above. An analysis of the transition pathways for nitrogen atoms shows that the final step, incorporation of small B–N motifs into larger hBN sheets, is the rate-limiting step in the regimes considered. While raising the temperature from 1750 to 2000 K has little effect on the formation of intermediates (N–N–B, B–N–B, etc.), the lack of large hBN sheets at temperatures >1900 K is explained by decreased probability of the final step and increased probability of breakup of hBN into B–N motifs.
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
Heteroepitaxial Integration of ZnGeN 2 on GaN Buffers Using Molecular Beam Epitaxy
Recently theorized hybrid II-IV-N 2 /III-N heterostructures, based on current commercialized (In,Ga)N devices, are predicted to significantly advance the design space of highly efficient optoelectronics in the visible spectrum, yet there are few epitaxial studies of II-IV-N 2 materials. In this work, we present heteroepitaxial ZnGeN 2 grown on GaN buffers and AlN templates. We demonstrate that a GaN nucleating surface is crucial for increasing the ZnGeN 2 crystallization rate to combat Zn desorption, extending the stoichiometric growth window from 215 degrees C on AlN to 500 degrees C on GaN buffers. Structural characterization reveals well-crystallized films with threading dislocations extending from the GaN buffer. These films have a critical thickness for relaxation of 20-25 nm as determined by reflection high energy electron diffraction (RHEED) and cross-sectional scanning electron microscopy (SEM). The films exhibit a cation-disordered wurtzite structure, with lattice constants a = 3.216 +/- 0.004 A and c = 5.215 +/- 0.005 A determined by RHEED and X-ray diffraction (XRD). This work demonstrates a significant step toward the development of hybrid ZnGeN 2 -GaN integrated devices.
36 MATERIALS SCIENCE↗
Eu speciation in apatite at 1 bar: An experimental study of valence-state partitioning by XANES, lattice strain, and Eu/Eu* in basaltic systems
Abstract Partition coefficients for rare earth elements (REEs) between apatite and basaltic melt were determined as a function of oxygen fugacity (fO2; iron-wüstite to hematite-magnetite buffers) at 1 bar and between 1110 and 1175 °C. Apatite-melt partitioning data for REE3+ (La, Sm, Gd, Lu) show near constant values at all experimental conditions, while bulk Eu becomes more incompatible (with an increasing negative anomaly) with decreasing fO2. Experiments define three apatite calibrations that can theoretically be used as redox sensors. The first, a XANES calibration that directly measures Eu valence in apatite, requires saturation at similar temperature-composition conditions to experiments and is defined by: ( E u 3 + ∑ E u ) Apatite = 1 1 + 10 - 0.10 ± 0.01 × l o g ( f o 2 ) - 1.63 ± 0.16 . The second technique involves analysis of Sm, Eu, and Gd in both apatite and coexisting basaltic melt (glass), and is defined by: ( Eu E u * ) D Sm × Gd = 1 1 + 10 - 0.15 ± 0.03 × l o g ( f o 2 ) - 2.46 ± 0.41 . The third technique is based on the lattice strain model and also requires analysis of REE in both apatite and basalt. This calibration is defined by ( Eu E u * ) D lattice strain = 1 1 + 10 - 0.20 ± 0.03 × l o g ( f o 2 ) - 3.03 ± 0.42 . The Eu valence-state partitioning techniques based on (Sm×Gd) and lattice strain are virtually indistinguishable, such that either methodology is valid. Application of any of these calibrations is best carried out in systems where both apatite and coexisting glass are present and in direct contact with one another. In holocrystalline rocks, whole rock analyses can be used as a guide to melt composition, but considerations and corrections must be made to either the lattice strain or Sm×Gd techniques to ensure that the effect of plagioclase crystallization either prior to or during apatite growth can be removed. Similarly, if the melt source has an inherited either a positive or negative Eu anomaly, appropriate corrections must also be made to lattice strain or Sm×Gd techniques that are based on whole rock analyses. This being the case, if apatite is primary and saturates from the parent melt early during the crystallization sequence, these corrections may be minimal. The partition coefficients for the REE between apatite and melt range from a maximum DEu3+ = 1.67 ± 0.25 (as determined by lattice strain) to DLu3+ = 0.69 ± 0.10. The REE partition coefficient pattern, as observed in the Onuma diagram, is in a fortuitous situation where the most compatible REE (Eu3+) is also the polyvalent element used to monitor fO2. These experiments provide a quantitative means of assessing Eu anomalies in apatite and how they be used to constrain the oxygen fugacity of silicate melts.
Geochemistry & Geophysics↗
Void growth by dislocation adsorption
Here, we propose a dislocation adsorption-based mechanism for void growth in metals, wherein a void grows as dislocations from the bulk annihilate at its surface. The basic process is governed by glide and cross-slip of dislocations at the surface of a void. Using molecular dynamics simulations we show that when dislocations are present around a void, growth occurs more quickly and at much lower stresses than when the crystal is initially dislocation-free. Finally, we show that adsorption-mediated growth predicts an exponential dependence on the hydrostatic stress, consistent with the well-known Rice-Tracey equation.
36 MATERIALS SCIENCE↗