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At least 775 records · Page 43

Improvements in contact resistivity and thermal stability of Au-contacted InP solar cells

Specific contact resistivities for as-fabricated Au contacts on n-p InP solar cells are typically in the 10(exp -3) ohm/sq cm range, but contact resistivities in the 10(exp -6) ohm/sq cm range can be obtained if the cells are heat treated at 400 C for a few minutes. This heat treatment, however, results in a dramatic drop in the open circuit voltage of the cell due to excessive dissolution of the emitter into the metallization. It was found that low values of contact resistivity can be secured without the accompanying drop in the open circuit voltage by adding Ga and In in the Au metallization. It is shown that Au contacts containing as little as 1 percent atomic Ga can suppress the reaction that takes place at the metal-InP interface during heat treatment, while exhibiting contact resistivity values in the low 10(exp -5) ohm/sq cm. Detailed explanations for the observed superior thermal stability of these contacts are presented.

Fatemi, Navid S.↗

Laser-assisted solar cell metallization processing

Laser-assisted processing techniques utilized to produce the fine line, thin metal grid structures that are required to fabricate high efficiency solar cells are examined. Two basic techniques for metal deposition are investigated; (1) photochemical decomposition of liquid or gas phase organometallic compounds utilizing either a focused, CW ultraviolet laser (System 1) or a mask and ultraviolet flood illumination, such as that provided by a repetitively pulsed, defocused excimer laser (System 2), for pattern definition, and (2) thermal deposition of metals from organometallic solutions or vapors utilizing a focused, CW laser beam as a local heat source to draw the metallization pattern.

Dutta, S.↗

High-Rate and Low-Temperature Fabrication of Cu(In,Ga)Se 2 Solar Cells Using AgBr Induced Recrystallization

We present results demonstrating a three-stage, high-rate, low-temperature deposition process for Cu(In,Ga)Se 2 solar cells including a recrystallization step after the second stage, catalyzed by AgBr. The entire deposition and recrystallization process takes place below 450 °C in less than 15 min. Device results with efficiencies exceeding 16% are shown. Here, we achieve very high levels of grain growth and a greater than a 5% absolute increase in device performance because of the recrystallization step relative to an identical process not involving AgBr.

14 SOLAR ENERGY↗

Arsenic Doping of Polycrystalline CdSeTe Devices for Microsecond Life-times with High Carrier Concentrations

We report seminal advances in fabrication and understanding of group V (As) doped thin-film polycrystalline CdTe-based solar cells. The devices are fabricated using a novel approach, by sublimating layers of CdSeTe and CdSeTe:As. This new method allowed us to achieve minority carrier lifetime of over 1 μs, carrier concentration of more than 5×l0 15 cc -1 and external radiative efficiency of over 2 % in a device configuration. We find an increase in open-circuit voltage when comparing As-doped, Cu-doped and undoped devices. The choice of CdSeTe instead of a CdTe-only absorber has been explained using first-principle density functional theory model. A SCAPS device model is used to analyze the potential causes for lower open-circuit voltage.

Munshi, Amit H.↗

Heat pipe heat rejection system

A prototype of a battery heat rejection system was developed which uses heat pipes for more efficient heat removal and for temperature control of the cells. The package consists of five thermal mock-ups of 100 amp-hr prismatic cells. Highly conductive spacers fabricated from honeycomb panels into which heat pipes are embedded transport the heat generated by the cells to the edge of the battery. From there it can be either rejected directly to a cold plate or the heat flow can be controlled by means of two variable conductance heat pipes. The thermal resistance between the interior of the cells and the directly attached cold plate was measured to be 0.08 F/Watt for the 5-cell battery. Compared to a conductive aluminum spacer of equal weight the honeycomb/heat pipe spacer has approximately one-fifth of the thermal resistance. In addition, the honeycomb/heat pipe spacer virtually eliminates temperature gradients along the cells.

Kroliczek, E. J.↗

Positive Electrode Fabrication for Bi-polar Ni-h2 Cells

Bi-Polar nickel hydrogen design studies indicated a potential improvement in energy density and specific energy if positive electrodes could be manufactured in configurations of twice or more of the present normal thickness. Such electrodes would have to achieve similar active material loading, utilization, and cycle life to conventional 0.8mm I.P.U. nickel hydrogen electrodes. A capability for producing 1.0mm dry sinter and 1.5mm slurry sinter structures on production processes and equipment was demonstrated. The EPI/USAF electrochemical impregnation process proved capable of loading thick electrodes to 1.60 g/cubic centimeters void or higher. Sample electrodes incurred 2000 high rate stress cycles without significant structural or performance degradation. Formation regimes developed for thin plaque are not optimal for thick plaque and further investigation into electrode capacity build-up would seem warranted. Thick electrode technology development is continuing under other programs and shows promise of fulfilling the projected energy density and specific energy improvements.

Edgar, T. A.↗

Fabrication and analysis of dot junction silicon solar cells

A design of solar cells with reduced junction area on the cell surface is investigated for reduction of saturation current and increase in open-circuit voltage. Equidiameter dot junctions distributed across the surface of the cell offer an efficient alternative, with variations in dot diameter and in the spacing between dots giving the required variations in the ratio of junctions area to total surface area. A simplified analysis for short-circuit current and other cell parameters, which enables cell design optimization, is presented. Efficiencies beyond 18 percent are obtainable in flat-plate terrestrial applications. Experimental solar-cell performance results, as functions of different area ratios, and bulk doping are presented. It is shown that saturation current reduction and open-circuit voltage increase is obtained by reduced junction area.

Crotty, G. T.↗

Arsenic Doping of Polycrystalline CdSeTe Devices for Microsecond Life-times with High Carrier Concentrations

We report seminal advances in fabrication and understanding of group V (As) doped thin-film polycrystalline CdTe-based solar cells. The devices are fabricated using a novel approach, by sublimating layers of CdSeTe and CdSeTe:As. This new method allowed us to achieve minority carrier lifetime of over 1 μs, carrier concentration of more than 5x1015 cc-1 and external radiative efficiency of over 2% in a device configuration. We find an increase in open-circuit voltage when comparing As-doped, Cu-doped and undoped devices. The choice of CdSeTe instead of a CdTe-only absorber has been explained using first-principle density functional theory model. A SCAPS device model is used to analyze the potential causes for lower open-circuit voltage.

14 SOLAR ENERGY↗

Methods for fabricating thin film III-V compound solar cell

The present invention utilizes epitaxial lift-off in which a sacrificial layer is included in the epitaxial growth between the substrate and a thin film III-V compound solar cell. To provide support for the thin film III-V compound solar cell in absence of the substrate, a backing layer is applied to a surface of the thin film III-V compound solar cell before it is separated from the substrate. To separate the thin film III-V compound solar cell from the substrate, the sacrificial layer is removed as part of the epitaxial lift-off. Once the substrate is separated from the thin film III-V compound solar cell, the substrate may then be reused in the formation of another thin film III-V compound solar cell.

Pan, Noren↗

Ultrarapid crystallization of low-dimensional perovskite with excellent stability for future high-throughput fabrication

We report perovskite solar cells (PSCs) as an emerging photovoltaic technique have achieved exceptional power conversion efficiency (PCE) up to 25.7% after fast development over the past decade. But currently some critical issues are still not well addressed in terms of realizing large-scale fabrication, for example, fast fabrication of high-quality perovskite film with good stability. Here, we demonstrate the use of stable and fast-crystallizing low-dimensional (LD) perovskite thin films as the light absorber with only a 10 s annealing time at 250 °C, delivering a PCE of 18.16%. The crystallization and photoelectric properties of LD perovskite are well illustrated. The reduction in the annealing time will dramatically increase the productivity of PSCs. The PSCs based on rapidly annealed LD perovskite thin films exhibit excellent stability, with only 12% loss of PCE after 1000 h storage at 85 °C and 40-70% relative humidity.

14 SOLAR ENERGY↗

Development of advanced fuel cell system

An experimental program was conducted continuing the development effort to improve the weight, life, and performance characteristics of hydrogen-oxygen alkaline fuel cells for advanced power systems. These advanced technology cells operate with passive water removal which contributes to a lower system weight and extended operating life. Endurance evaluation of two single cells and two, two-cell plaques was continued. Three new test articles were fabricated and tested. A single cell completed 7038 hours of endurance testing. This cell incorporated a Fybex matrix, hybrid-frame, PPF anode, and a 90 Au/10 Pt cathode. This configuration was developed to extend cell life. Two cell plaques with dedicated flow fields and manifolds for all fluids did not exhibit the cell-to-cell electrolyte transfer that limited the operating life of earlier multicell plaques.

Gitlow, B.↗

DLTS analysis of radiation-induced defects in one-MeV electron irradiated germanium and Alsub0.17Gasub0.83As solar cells

The radiation-induced deep-level defects in one-MeV electron-irradiated germanium and AlxGal-xAs solar cell materials using the deep-level transient spectroscopy (DLTS) and C-V techniques were investigated. Defect and recombination parameters such as defect density and energy levels, capture cross sections and lifetimes for both electron and hole traps were determined. The germanium and AlGaAs p/n junction cells were irradiated by one-MeV electrons. The DLTS, I-V, and C-V measurements were performed on these cells. The results are summarized as follows: (1) for the irradiated germanium samples, the dominant electron trap was due to the E sub - 0.24 eV level with density around 4x10 to the 14th power 1/cu cm, independent of electron fluence, its origin is attributed to the vacancy-donor complex defect formed during the electron irradiation; (2) in the one-MeV electron irradiated Al0.17Ga0.83 as sample, two dominant electron traps with energies of Ec-0.19 and -0.29 eV were observed, the density for both electron traps remained nearly constant, independent of electron fluence. It is shown that one-MeV electron irradiation creates very few or no new deep-level traps in both the germanium and AlxGa1-xAs cells, and are suitable for fabricating the radiation-hard high efficiency multijunction solar cells for space applications.

Li, S. B.↗

Improving Cooperative Interactions Between Halogenated Aromatic Additives and Aromatic Side Chain Acceptors for Realizing 19.22% Efficiency Polymer Solar Cells

Processing additive plays an important role in the standard operation procedures for fabricating top performing polymer solar cells (PSCs) through efficient interactions with key photovoltaic materials. However, improving interaction study of acceptor materials to high performance halogenated aromatic additives such as diiodobenzene (DIB) is a widely neglected route for molecular engineering toward more efficient device performances. Here, in this work, two novel Y-type acceptor molecules of BTP-TT and BTP-TTS with different aromatic side chains on the outer positions are designed and synthesized. The resulting aromatic side chains significantly enhanced the interactions between the acceptor molecules and DIB through an arene/halogenated arene interaction, which improved the crystallinity of the acceptor molecules and induced a polymorph with better photovoltaic performances. Thus, high power conversion efficiencies (PCEs) of 18.04% and 19.22% are achieved in binary and ternary blend devices using BTP-TTS as acceptor and DIB as additive. Aromatic side chain engineering for improving additive interactions is proved to be an effective strategy for achieving much higher performance photovoltaic materials and devices.

36 MATERIALS SCIENCE↗

Rear Heterojunction GaAs Solar Cells With Strain-Balanced GaInAs/GaAsP Quantum Wells

We have fabricated GaAs rear-heterojunction solar cells with strain-balanced GaInAs/GaAsP multiple quantum wells to increase the range of absorption. The overall device architecture includes a thick n-type GaAs emitter layer, followed by undoped multiple quantum wells (QWs) and then a heterojunction with a higher bandgap GaInP p-type base. The QWs shift the band edge to from ~870 nm to 930 nm and results in >2 mA/cm 2 collection below the GaAs bandgap. Due to the heterojunction, the cell demonstrated a high open-circuit voltage of Voc=1.03V and an efficiency of 26.4% at 1000 W/m 2.

14 SOLAR ENERGY↗

Optimization and fabrication of porous carbon electrodes for Fe/Cr redox flow cells

Negative electrode development for the NASA chromous/ferric Redox battery is reported. The effects of substrate material, gold/lead catalyst composition and loading, and catalyzation procedures on the performance of the chromium electrode were investigated. Three alternative catalyst systems were also examined, and 1/3 square foot size electrodes were fabricated and delivered to NASA at the conclusion of the program.

Jalan, V.↗