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Optoelectronic memristor devices including one or more solid electrolytes with electrically controllable optical properties
An optoelectronic memristor includes a first electrode, a second electrode, and a solid electrolyte in between that is in electrical communication with the first electrode and the second electrode. The solid electrolyte has an electronic conductivity of about 10 −10 Siemens/cm to about 10 −4 Siemens/cm at room temperature. The first electrode, and optionally the second electrode, can be optically transparent at a specific wavelength and/or a wavelength range. A direct current (DC) voltage source is employed to apply an electric field across the solid electrolyte, which induces a spatial redistribution of ionic defects in the solid electrolyte. In turn, this causes a change in electrical resistance of the solid electrolyte. The application of the electric field can also cause a change in an optical property of the solid electrolyte at the specific wavelength, and/or at the wavelength range (or a portion thereof).
Materials for controlling the epitaxial growth of photoactive layers in photovoltaic devices
There is disclosed ultrathin film material templating layers that force the morphology of subsequently grown electrically active thin films have been found to increase the performance of small molecule organic photovoltaic (OPV) cells. There is disclosed electron-transporting material, such as hexaazatriphenylene-hexacarbonitrile (HAT-CN) can be used as a templating material that forces donor materials, such as copper phthalocyanine (CuPc) to assume a vertical-standing morphology when deposited onto its surface on an electrode, such as an indium tin oxide (ITO) electrode. It has been shown that for a device with HAT-CN as the templating buffer layer, the fill factor and short circuit current of CuPc:C60 OPVs were both improved compared with cells lacking the HAT-CN template. This is explained by the reduction of the series resistance due to the improved crystallinity of CuPc grown onto the ITO surface.
Engineering and control of advanced optoelectronic materials for applications in quantum devices.
Abstract not provided.
Wide bandgap optical switch circuit breaker for controlling propagation of current therethrough a wide bandgap optical device
A high-voltage switch is adapted for use as a medium-voltage direct current circuit breaker, which provides a low-cost, small-footprint device to mitigate system faults. In one example, a method for operating a wideband optical device includes illuminating the wide bandgap optical device with a light within a first range of wavelengths and a first average intensity, allowing a current to propagate therethrough without substantial absorption of the current, illuminating the wide bandgap optical device with light within the first range of wavelengths and a second average intensity that is lower than the first average intensity to allow a sustained current flow though the wide bandgap optical device, and illuminating the wide bandgap optical device with light within a second range of wavelengths to stop or substantially restrict propagation of the current through the wide gap material.
Demonstrating Load-Shaping Capabilities of Cost Minimizing Heat Pump Water Heater Controls with Varying Price Profiles
Increased penetration of photovoltaics and electrification of traditionally gas appliances are exacerbating existing challenges in cost-effectively balancing electricity grid supply and demand. Decarbonization without incurring expensive transmission and distribution system capacity increases requires shifting building loads from peak demand times to peak renewable production times. Grid operators are evaluating new ways of encouraging load shifting, including using time-varying price structures to provide a financial incentive. If devices incorporate price-responsive controls, a price profile could be designed to yield a wide variety of load curves as needed to optimize grid functionality. Heat pump water heaters (HPWHs) are an ideal device for price-responsive controls because the storage tank enables them to optimize the timing of electricity consumption without impacting hot water delivery service. This paper presents work demonstrating how price-responsive controls for HPWHs can provide different load profiles, as needed to stabilize the grid, in response to different price profiles. HPWH manufacturers now include web API and CTA-2045 communication capabilities which enable sending load shaping control signals. Pilot studies and preliminary programs have utilized these capabilities with uniform control strategies to reduce 4-9 PM electricity consumption. However, no studies have developed flexible controls capable of both a) responding to constantly varying price profiles and b) customizing logic to match the needs of each HPWH. Berkeley Lab's CalFlexHub project is pioneering price-driven load flexibility by developing and deploying cost-minimizing controls utilizing setpoint setting signals for fleets of HPWHs in response to varying price profiles. Control development is based on simulations using the Flexible Heat Pump Water Heater Performance Predictor which captures the control decisions of a residential, integrated HPWH manufacturer’s on-board controller. The proposed cost-reducing controls respond to constantly changing price profiles, providing the ability to change the price profile to generate load curves as needed to maintain grid stability. Preliminary simulations studying the load shaping capabilities of price-responsive controls on a fleet of 60 HPWHs have demonstrated an average of a) 135.4% increases in load during low-price periods, b) >36.8% reductions in electricity peak-price period, and c) 6.2% electricity cost savings.
Mid-infrared spectroscopy with a broadly tunable thin-film lithium niobate optical parametric oscillator
Mid-infrared spectroscopy, an important technique for sensing molecules, has encountered barriers from sources either limited in tuning range or excessively bulky for widespread use. We present a compact, efficient, and broadly tunable optical parametric oscillator surmounting these challenges. Leveraging dispersion-engineered thin-film lithium niobate-on-sapphire photonics and a singly resonant cavity allows broad, controlled tuning over an octave from 1.5–3.3 µm. The device generates >25mW of mid-infrared light at 3.2 µm with 15% conversion efficiency. The ability to precisely control the device’s mid-infrared emission enables spectroscopy of methane and ammonia, demonstrating our approach’s relevance for sensing. Our work signifies an important advance in nonlinear photonics miniaturization, bringing practical field applications of high-speed, broadband mid-infrared spectroscopy closer to reality.
Electric Field-Controlled Magnetization in GaAs/AlGaAs Heterostructures–Chiral Organic Molecules Hybrids
Here, we study GaAs/AlGaAs devices hostinga two-dimensional electron gas and coated with a monolayer of chiral organic molecules.We observe clear signatures of room temperature magnetism, which is induced in these systems by applying a gate voltage. We explain this phenomenon as a consequence of the spin-polarized charges that are injectedinto the semiconductor through the chiral molecules. The orientation of the magnetic moment can be manipulated by low gate voltages, with a switching ratein the MHz range. Therefore, our devices implement an efficient, electric field controlled magnetization, which has long been desired for their technical prospects.
Entropically induced asymmetric passage times of charged tracers across corrugated channels
We analyze the diffusion of charged and neutral tracers suspended in an electrolyte embedded in a channel of varying cross section. Making use of systematic approximations, the diffusion equation governing the motion of tracers is mapped into an effective 1D equation describing the dynamics along the longitudinal axis of the channel where its varying-section is encoded as an effective entropic potential. This simplified approach allows us to characterize tracer diffusion under generic confinement by measuring their mean first passage time (MFPT). In particular, we show that the interplay between geometrical confinement and electrostatic interactions strongly affect the MFTP of tracers across corrugated channels hence leading to alternative means to control tracers translocation across charged pores. Finally, our results show that the MFPTs of a charged tracer in opposite directions along an asymmetric channel may differ We expect our results to be relevant for biological as well synthetic devices whose dynamics is controlled by the detection of diluted tracers.
NA-IM TGESC Mobile Device Secure Sled [Slides]
SafeCase provides essential controls such as: 1) Audio masking and 2) camera blocking capabilities if a mobile device has been compromised. This exoskeleton phone case provides a solution in secure spaces at a hardware level providing key attack surface reductions and potential exposures from an audio and visual standpoint.
Autofocus system and autofocus method for focusing on a surface
An autofocus system includes an imaging device, a lens system and a focus control actuator that is configured to change a focus position of the imaging device in relation to a stage. The electronic control unit is configured to control the focus control actuator to a plurality of predetermined focus positions, and activate the imaging device to obtain an image at predetermined positions and then apply a spatial filter to the obtained images. This generates a filtered image for the obtained images. The control unit determines a focus score for the filtered images such that the focus score corresponds to a degree of focus in the obtained images. The control unit identifies a best focus position by comparing the focus score of the filtered images, and controls the focus control actuator to the best focus position corresponding to the highest focus score.
Atomic Precision Processing of Two-Dimensional Materials for Next-Generation Microelectronics
The growth of the information era economy is driving the pursuit of advanced materials for microelectronics, spurred by exploration into “Beyond CMOS” and “More than Moore” paradigms. Atomically thin 2D materials, such as transition metal dichalcogenides (TMDCs), show great potential for next-generation microelectronics due to their properties and defect engineering capabilities. This perspective delves into atomic precision processing (APP) techniques like atomic layer deposition (ALD), epitaxy, atomic layer etching (ALE), and atomic precision advanced manufacturing (APAM) for the fabrication and modification of 2D materials, essential for future semiconductor devices. Additive APP methods like ALD and epitaxy provide precise control over composition, crystallinity, and thickness at the atomic scale, facilitating high-performance device integration. Subtractive APP techniques, such as ALE, focus on atomic-scale etching control for 2D material functionality and manufacturing. In APAM, modification techniques aim at atomic-scale defect control, offering tailored device functions and improved performance. Achieving optimal performance and energy efficiency in 2D material-based microelectronics requires a comprehensive approach encompassing fundamental understanding, process modeling, and high-throughput metrology. Finally, the outlook for APP in 2D materials is promising, with ongoing developments poised to impact manufacturing and fundamental materials science. Integration with advanced metrology and codesign frameworks will accelerate the realization of next-generation microelectronics enabled by 2D materials.
Impact of impurities on peeling–ballooning modes and turbulence in tokamak plasmas
This study investigates the impact of various impurity species on peeling–ballooning (PB) modes and microturbulence in tokamak plasmas through the extension of traditional two-fluid and gyro-landau-fluid (GLF) models. By incorporating finite Larmor radius (FLR) effects, the analysis provides a comprehensive understanding of impurity-driven impact and its interaction with plasma turbulence. Depending on charge state and local plasma conditions, heavy impurities may exhibit gyro-radii larger than those of main ions, which are captured in the extended GLF model presented. Following the presentation of modified two-fluid equations incorporating impurity effects, we systematically analyze the distinctions between impurity and main ion dynamics and their resultant feedback mechanisms on plasma behavior. Derivation of the linear dispersion relation enables quantification of impurity-mediated modifications to: plasma vorticity, diamagnetic drift and gyroviscous effects, electron Hall physics, and FLR effects. BOUT++ – based linear simulations corroborate this formalism, demonstrating systematic stabilization of PB modes upon impurity seeding. And then operational implications for practical impurity control strategies in tokamak devices are proposed. The results underscore the necessity of impurity management to maintain stability and optimize plasma confinement, with specific focus on how FLR effects contribute to transport dynamics. This work paves the way for enhanced modeling and simulation efforts, supporting the development of strategies to control impurity-induced turbulence and improve overall reactor performance.
The Demonstration of Power over Ethernet (PoE) Technologies in Commercial and Institutional Buildings
Power over Ethernet (PoE) technologies are currently ubiquitous in offices in the form of phones, access points, and IP security cameras. They are systems that are familiar to and managed by on-site IT staff. As low voltage DC-power capabilities have increased with the advancement of IT network switches within offices, PoE devices are now being integrated across additional building systems, including lighting, computers, and HVAC controls. The connection of PoE devices to network switches offers the opportunity for energy monitoring and management to be performed through IT network management software. Data and results from technology validations of PoE equipment remain very limited. This lack of information hinders expansion of PoE as an energy management strategy as its benefits and challenges have been insufficiently quantified in real-world scenarios. This final report presents the findings of a DOE/State of Minnesota-funded project that demonstrated and assessed the energy and non-energy benefits of Power over Ethernet (PoE) technologies at six sites: two offices, three schools, and a hotel. The goals of the demonstrations were to: (1) assess the receptiveness of commercial and institutional markets to these new technologies, (2) demonstrate the feasibility of PoE technologies within standard design/construction practices and commercial codes, (3) assess the energy and cost savings opportunities of these technologies, (4) provide energy management opportunities where not typically available, and (5) formulate approaches to spur adoption of these technologies in the marketplace.
Cooperative Research and Development Agreement among National Energy Technology Laboratory, The Board of Regents of the University System of Georgia by and on behalf of Georgia Institute of Technology, and University of Texas at El Paso [Abstract]
Georgia Institute of Technology (GIT), University of Texas at El Paso (UTEP), and the National Energy Technology Laboratory (NETL) will collaborate and develop cyber-physical systems for advanced power systems. GIT will test virtual models on hybrid power system hardware and cyber physical components. UTEP will test novel actuators on hybrid power system hardware. NETL will access GIT’s expertise in the engineering and real time simulation of power system processes for cyber-physical systems and simulations to control hardware. NETL will establish a relationship to promote UTEP’s capabilities in additive manufacturing and high-temperature piezo-electric devices with the potential for controlling high-temperature flows with a light and inexpensive device at high response rates. This project is the result of an EERE Advanced Manufacturing Office open Multi-Topic awarded proposal led by GIT titled, “Robust Combined Heat and Hybrid Power (CHHP) for High Electrical Efficiency Cogeneration”.
Octave-spanning terahertz quarter-wave plates based on over-coupled Fabry–Pérot resonances in reflective metal–dielectric–metal metasurfaces
Compact devices for broadband polarization control in the terahertz (THz) regime remain challenging to realize due to the intrinsic phase dispersion associated with birefringent materials and resonant structures. Here, we demonstrate achromatic THz quarter-wave plates with near-unity efficiency and operating under a wide range of incidence angles, based on over-coupled metal–dielectric–metal reflective metasurfaces. The devices operate as single-port anisotropic Fabry–Pérot cavities, in which the phase dispersion of the over-coupled resonances is engineered to maintain an approximately constant relative phase delay between orthogonal field components over a broad frequency range. Four complementary metasurface designs operating at an incidence angle of 45° collectively cover the 0.25–3 THz frequency range accessible to a typical THz time-domain spectroscopy system. Each device exhibits an approximately octave-wide operational bandwidth, with axial ratios below 3 dB and polarization-conversion efficiencies exceeding 80% across most of the operating band. Systematic structural optimization suppresses coupling to diffraction and guided-wave modes, thereby further extending the usable bandwidth while preserving the required phase relationship between orthogonal polarizations. The demonstrated metasurfaces are compatible with wafer-scale fabrication processes, and experimental results show excellent agreement with simulations. These findings establish over-coupled reflective metasurfaces as a robust, scalable, and versatile platform for broadband THz polarization control.
Strain-Induced Spin-Resonance Shifts in Silicon Devices
In spin-based quantum-information-processing devices, the presence of control and detection circuitry can change the local environment of a spin by introducing strain and electric fields, altering its resonant frequencies. These resonance shifts can be large compared to intrinsic spin linewidths, and it is therefore important to study, understand, and model such effects in order to better predict device performance. We investigate a sample of bismuth donor spins implanted in a silicon chip, on top of which a superconducting aluminum microresonator is fabricated. The on-chip resonator provides two functions: it produces local strain in the silicon due to the larger thermal contraction of the aluminum, and it enables sensitive electron spin-resonance spectroscopy of donors close to the surface that experience this strain. Through finite-element strain simulations, we are able to reconstruct key features of our experiments, including the electron spin-resonance spectra. Our results are consistent with a recently observed mechanism for producing shifts of the hyperfine interaction for donors in silicon, which is linear with the hydrostatic component of an applied strain.
Selective control of conductance modes in multi-terminal Josephson junctions
The Andreev bound state spectra of multi-terminal Josephson junctions form an artificial band structure, which is predicted to host tunable topological phases under certain conditions. However, the number of conductance modes between the terminals of a multi-terminal Josephson junction must be few in order for this spectrum to be experimentally accessible. In this work, we employ a quantum point contact geometry in three-terminal Josephson devices to demonstrate independent control of conductance modes between each pair of terminals and access to the single-mode regime coexistent with the presence of superconducting coupling. These results establish a full platform on which to realize tunable Andreev bound state spectra in multi-terminal Josephson junctions.