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At least 775 records · Page 43

Phonon screening and dissociation of excitons at finite temperatures from first principles

The properties of excitons, or correlated electron–hole pairs, are of paramount importance to optoelectronic applications of materials. A central component of exciton physics is the electron–hole interaction, which is commonly treated as screened solely by electrons within a material. However, nuclear motion can screen this Coulomb interaction as well, with several recent studies developing model approaches for approximating the phonon screening of excitonic properties. While these model approaches tend to improve agreement with experiment, they rely on several approximations that restrict their applicability to a wide range of materials, and thus far they have neglected the effect of finite temperatures. Here, we develop a fully first-principles, parameter-free approach to compute the temperature-dependent effects of phonon screening within the ab initio GW -Bethe–Salpeter equation framework. We recover previously proposed models of phonon screening as well-defined limits of our general framework, and discuss their validity by comparing them against our first-principles results. We develop an efficient computational workflow and apply it to a diverse set of semiconductors, specifically AlN, CdS, GaN, MgO, and SrTiO 3 . We demonstrate under different physical scenarios how excitons may be screened by multiple polar optical or acoustic phonons, how their binding energies can exhibit strong temperature dependence, and the ultrafast timescales on which they dissociate into free electron–hole pairs.

Science & Technology - Other Topics↗

THE FOURTH US NAVAL OBSERVATORY CCD ASTROGRAPH CATALOG (UCAC4)

The fourth United States Naval Observatory (USNO) CCD Astrograph Catalog, UCAC4, was released in 2012 August (double-sided DVD and CDS data center Vizier catalog I/322). It is the final release in this series and contains over 113 million objects; over 105 million of them with proper motions (PMs). UCAC4 is an updated version of UCAC3 with about the same number of stars also covering all-sky. Bugs were fixed, Schmidt plate survey data were avoided, and precise five-band photometry was added for about half the stars. Astrograph observations have been supplemented for bright stars by FK6, Hipparcos, and Tycho-2 data to compile a UCAC4 star catalog complete from the brightest stars to about magnitude R = 16. Epoch 1998-2004 positions are obtained from observations with the 20 cm aperture USNO Astrograph's 'red lens', equipped with a 4k by 4k CCD. Mean positions and PMs are derived by combining these observations with over 140 ground- and space-based catalogs, including Hipparcos/Tycho and the AC2000.2, as well as unpublished measures of over 5000 plates from other astrographs. For most of the faint stars in the southern hemisphere, the first epoch plates from the Southern Proper Motion program form the basis for PMs, while the Northern Proper Motion first epoch plates serve the same purpose for the rest of the sky. These data are supplemented by 2MASS near-IR photometry for about 110 million stars and five-band (B, V, g, r, i) APASS data for over 51 million stars. Thus the published UCAC4, as were UCAC3 and UCAC2, is a compiled catalog with the UCAC observational program being a major component. The positional accuracy of stars in UCAC4 at mean epoch is about 15-100 mas per coordinate, depending on magnitude, while the formal errors in PMs range from about 1 to 10 mas yr{sup -1} depending on magnitude and observing history. Systematic errors in PMs are estimated to be about 1-4 mas yr{sup -1}.

79 ASTRONOMY AND ASTROPHYSICS↗

Structure and formation of cD galaxies: NGC 6166 in Abell 2199

Hobby–Eberly Telescope (HET) spectroscopy is used to measure the velocity dispersion profile of the nearest prototypical cD galaxy, NGC 6166 in the cluster Abell 2199. We also present composite surface photometry from many telescopes. We confirm the defining feature of a cD galaxy; i.e., (we suggest), a halo of stars that fills the cluster center and that is controlled dynamically by cluster gravity, not by the central galaxy. Our HET spectroscopy shows that the velocity dispersion of NGC 6166 rises from σ≃300 km s{sup −1} in the inner r∼10′′ to σ=865±58 km s{sup −1} at r ∼ 100″ in the cD halo. This extends published observations of an outward σ increase and shows for the first time that σ rises all the way to the cluster velocity dispersion of 819 ± 32 km s{sup −1}. We also observe that the main body of NGC 6166 moves at +206 ± 39 km s{sup −1} with respect to the cluster mean velocity, but the velocity of the inner cD halo is ∼70 km s{sup −1} closer to the cluster velocity. These results support our picture that cD halos consist of stars that were stripped from individual cluster galaxies by fast tidal encounters. However, our photometry does not confirm the widespread view that cD halos are identifiable as an extra, low-surface-brightness component that is photometrically distinct from the inner, steep-Sérsic-function main body of an otherwise-normal giant elliptical galaxy. Instead, all of the brightness profile of NGC 6166 outside its core is described to ±0.037 V mag arcsec{sup −2} by a single Sérsic function with index n≃8.3. The cD halo is not recognizable from photometry alone. This blurs the distinction between cluster-dominated cD halos and the similarly-large-Sérsic-index halos of giant, core-boxy-nonrotating ellipticals. These halos are believed to be accreted onto compact, high-redshift progenitors (“red nuggets”) by large numbers of minor mergers. They belong dynamically to their central galaxies. Still, cDs and core-boxy-nonrotating Es may be more similar than we think: both may have outer halos made largely via minor mergers and the accumulation of tidal debris. We construct a main-body+cD-halo decomposition that fits both the brightness and dispersion profiles. To fit σ(r), we need to force the component Sérsic indices to be smaller than a minimum-χ{sup 2} photometric decomposition would suggest. The main body has M{sub V}≃−22.8≃30% of the total galaxy light. The cD halo has M{sub V}≃−23.7, ∼1/2 mag brighter than the brightest galaxy in the Virgo cluster. A mass model based on published cluster dynamics and X-ray observations fits our observations if the tangential dispersion is larger than the radial dispersion at r≃20′′ –60′′. The cD halo is as enhanced in α element abundances as the main body of NGC 6166. Quenching of star formation in ≲1 Gyr suggests that the center of Abell 2199 has been special for a long time during which dynamical evolution has liberated a large mass of now-intracluster stars.

79 ASTRONOMY AND ASTROPHYSICS↗

COMMON PATTERNS IN THE EVOLUTION BETWEEN THE LUMINOUS NEUTRON STAR LOW-MASS X-RAY BINARY SUBCLASSES

The X-ray transient XTE J1701–462 was the first source observed to evolve through all known subclasses of low-magnetic-field neutron star low-mass X-ray binaries (NS-LMXBs), as a result of large changes in its mass accretion rate. To investigate to what extent similar evolution is seen in other NS-LMXBs we have performed a detailed study of the color–color and hardness–intensity diagrams (CDs and HIDs) of Cyg X-2, Cir X-1, and GX 13+1—three luminous X-ray binaries, containing weakly magnetized neutron stars, known to exhibit strong secular changes in their CD/HID tracks. Using the full set of Rossi X-ray Timing Explorer Proportional Counter Array data collected for the sources over the 16 year duration of the mission, we show that Cyg X-2 and Cir X-1 display CD/HID evolution with close similarities to XTE J1701–462. Although GX 13+1 shows behavior that is in some ways unique, it also exhibits similarities to XTE J1701–462, and we conclude that its overall CD/HID properties strongly indicate that it should be classified as a Z source, rather than as an atoll source. We conjecture that the secular evolution of Cyg X-2, Cir X-1, and GX 13+1—illustrated by sequences of CD/HID tracks we construct—arises from changes in the mass accretion rate. Our results strengthen previous suggestions that within single sources Cyg-like Z source behavior takes place at higher luminosities and mass accretion rates than Sco-like Z behavior, and lend support to the notion that the mass accretion rate is the primary physical parameter distinguishing the various NS-LMXB subclasses.

79 ASTRONOMY AND ASTROPHYSICS↗

Ion-damage-free planarization or shallow angle sectioning of solar cells for mapping grain orientation and nanoscale photovoltaic properties

Ion beam milling is the most common modern method for preparing specific features for microscopic analysis, even though concomitant ion implantation and amorphization remain persistent challenges, particularly as they often modify materials properties of interest. Atomic force microscopy (AFM), on the other hand, can mechanically mill specific nanoscale regions in plan-view without chemical or high energy ion damage, due to its resolution, directionality, and fine load control. As an example, AFM-nanomilling (AFM-NM) is implemented for top-down planarization of polycrystalline CdTe thin film solar cells, with a resulting decrease in the root mean square (RMS) roughness by an order of magnitude, even better than for a low incidence FIB polished surface. Subsequently AFM-based property maps reveal a substantially stronger contrast, in this case of the short-circuit current or open circuit voltage during light exposure. Furthermore, electron back scattering diffraction (EBSD) imaging also becomes possible upon AFM-NM, enabling direct correlations between the local materials properties and the polycrystalline microstructure. Smooth shallow-angle cross-sections are demonstrated as well, based on targeted oblique milling. As expected, this reveals a gradual decrease in the average short-circuit current and maximum power as the underlying CdS and electrode layers are approached, but a relatively consistent open-circuit voltage through the diminishing thickness of the CdTe absorber. AFM-based nanomilling is therefore a powerful tool for material characterization, uniquely providing ion-damage free, selective area, planar smoothing or low-angle sectioning of specimens while preserving their functionality. This then enables novel, co-located advanced AFM measurements, EBSD analysis, and investigations by related techniques that are otherwise hindered by surface morphology or surface damage.

33 ADVANCED PROPULSION SYSTEMS↗

Design of ePixM, a fully-depleted monolithic CMOS active pixel sensor for soft X-ray experiments at LCLS-II

The LCLS-II Free Electron Laser (FEL) will produce X-ray pulses with a repetition rate of up to 1 MHz and energies between 250 eV and 5 keV. Experiments conducted at LCLS-II will require 2D imaging detectors with a unique set of features, such as high-spatial resolution, low-noise performance, high-dynamic range and high-frame rates up to 1 MHz. We present the design of ePixM, a fully-depleted monolithic CMOS detector tailored for soft X-rays applications at high-repetition rates FEL. It consists of an array of 384×192 active pixel sensors, with a pixel size of 50×50 μm 2 and a total sensitive area of 2×1 cm 2 . ePixM has been designed in a 150 nm CMOS technology on high-resistivity substrate to achieve full depletion of the substrate. Each pixel includes a Charge Sensitive Amplifier (CSA) with gain auto-ranging capability and a noise-shaper performing Correlated Double Sampling (CDS). A novel technique named correlated pre-charging removes the excess noise introduced by the gain-switching mechanism. The performance of the design has been evaluated through post-layout simulations. The Equivalent Noise Charge (ENC) of 11.3 electrons enables single-photon detection at X-ray energies down to 250 eV, and the dynamic range exceeds 10 3 photons at 500 eV thanks to the auto-ranging circuitry.

47 OTHER INSTRUMENTATION↗

PIP-II cryoplant non thermal cycling updates

The Proton Improvement Plan-II (PIP-II) is a crucial upgrade to the Fermilab accelerator complex, featuring a new 800-MeV Superconducting Radio-Frequency (SRF) linear accelerator (LINAC) with 23 cryomodules operating at 2 K. The LINAC thermohydraulic conditions are satisfied by the cryogenic subsystems: Cryogenic Distribution System (CDS), a helium refrigerator cold box (CB), a warm compression station (WCS) and a helium recovery system (RSYS). The accelerator has a strict requirement of non-thermal cycling of the LINAC cryomodules during planned and unplanned subsystem outages. This paper presents an integrated reliability analysis of the PIPII cryoplant. The study evaluates both normal and abnormal operating modes, with a focus on identifying integrated scenarios that put subsystems components under stress. The conclusions of this study will help build redundancy to mitigate LINAC thermal cycling risks during planned and unplanned subsystem outages.

43 PARTICLE ACCELERATORS↗

Mg x Zn 1−x O contact to CuGa 3 Se 5 absorber for photovoltaic and photoelectrochemical devices

Abstract CuGa 3 Se 5 is a promising candidate material with wide band gap for top cells in tandem photovoltaic and photoelectrochemical (PEC) devices. However, traditional CdS contact layers used with other chalcopyrite absorbers are not suitable for CuGa 3 Se 5 due to the higher position of its conduction band (CB) minimum. Mg x Zn 1− x O (MZO) is a transparent oxide with adjustable band gap and CB position as a function of magnesium composition, but its direct application is hindered by CuGa 3 Se 5 surface oxidation. Here, MZO is investigated as a contact (n-type ‘buffer’ or ‘window’) material to CuGa 3 Se 5 absorbers pretreated in Cd 2+ solution, and an onset potential close to 1 V vs reversible hydrogen electrode in 10 mM hexaammineruthenium (III) chloride electrolyte is demonstrated. The Cd 2+ surface treatment changes the chemical composition and electronic structure of the CuGa 3 Se 5 surface, as demonstrated by photoelectron spectroscopy measurements. The performance of CuGa 3 Se 5 absorber with Cd 2+ treated surface in the solid-state test structure depends on the Zn/Mg ratio in the MZO layer. The measured open circuit voltage of 925 mV is promising for tandem PEC water splitting with CuGa 3 Se 5 /MZO top cells.

36 MATERIALS SCIENCE↗

Fully converged plane-wave-based self-consistent G W calculations of periodic solids

The GW approximation is a well-known method to obtain the quasiparticle and spectral properties of systems ranging from molecules to solids. In practice, GW calculations are often employed with many different approximations and truncations. In this work, we describe the implementation of a fully self-consistent GW approach based on the solution of the Dyson equation using a plane wave basis set. Algorithmic, numerical, and technical details of the self-consistent GW approach are presented. The fully self-consistent GW calculations are performed for GaAs, ZnO, and CdS including semicores in the pseudopotentials. No further approximations and truncations apart from the truncation on the plane wave basis set are made in our implementation of the GW calculation. After adopting a special potential technique, a ~100Ry energy cutoff can be used without the loss of accuracy. We found that the self-consistent GW (sc-GW) significantly overestimates the bulk band gaps, and this overestimation is likely due to the underestimation of the macroscopic dielectric constants. On the other hand, the sc-GW accurately predicts the d-state positions, most likely because the d-state screening does not sensitively depend on the macroscopic dielectric constant. Our work indicates the need to include the high-order vertex term in order for the many-body perturbation theory to accurately predict the semiconductor band gaps. Further, it also sheds some light on why, in some cases, the G 0 W 0 bulk calculation is more accurate than the fully self-consistent GW calculation, because the initial density-functional theory has a better dielectric constant compared to experiments.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

X-ray characterization of contact holes for block copolymer lithography

The directed self-assembly (DSA) of block copolymers (BCPs) is a promising low-cost approach to patterning structures with critical dimensions (CDs) which are smaller than can be achieved by traditional photolithography. The CD of contact holes can be reduced by assembling a cylindrical BCP inside a patterned template and utilizing the native size of the cylinder to dictate the reduced dimensions of the hole. This is a particularly promising application of the DSA technique, but in order for this technology to be realized there is a need for three-dimensional metrology of the internal structure of the patterned BCP in order to understand how template properties and processing conditions impact BCP assembly. This is a particularly challenging problem for traditional metrologies owing to the three-dimensional nature of the structure and the buried features. By utilizing small-angle X-ray scattering and changing the angle between the incident beam and sample we can reconstruct the three-dimensional shape profile of the empty template and the residual polymer after self-assembly and removal of one of the phases. A two-dimensional square grid pattern of the holes results in scattering in both in-plane directions, which is simplified by converting to a radial geometry. The shape is then determined by simulating the scattering from a model and iterating that model until the simulated and experimental scattering profiles show a satisfactory match. Samples with two different processing conditions are characterized in order to demonstrate the ability of the technique to evaluate critical features such as residual layer thickness and sidewall height. It was found that the samples had residual layer thicknesses of 15.9 ± 3.2 nm and 4.5 ± 2.2 nm, which were clearly distinguished between the two different DSA processes and in good agreement with focused ion beam scanning transmission electron microscopy (FIBSTEM) observations. The advantage of the X-ray measurements is that FIBSTEM characterizes around ten holes, while there are of the order of 800,000 holes illuminated by the X-ray beam.

Sunday, Daniel F.↗

The stopped-drop method: a novel setup for containment-free and time-resolved measurements

A novel setup for containment-free time-resolved experiments at a free-hanging drop is reported. Within a dead-time of 100 ms a drop of mixed reactant solutions is formed and the time evolution of a reaction can be followed from thereon by various techniques. As an example, a small-angle X-ray scattering study on the formation mechanism of EDTA-stabilized CdS both at a synchrotron and a laboratory X-ray source is presented here. While the evolution can be followed with one drop only at a synchrotron source, a stroboscopic mode with many drops is preferable for the laboratory source.

containment-free↗

Comparison of CIGS solar cells made with different structures and fabrication techniques

Cu(In, Ga)Se2 (CIGS)-based solar cells from six fabricators were characterized and compared. The devices had differing substrates, absorber deposition processes, buffer materials, and contact materials. The effective bandgaps of devices varied from 1.05 to 1.22 eV, with the lowest optical bandgaps occurring in those with metal-precursor absorber processes. Devices with Zn(O, S) or thin CdS buffers had quantum efficiencies above 90% down to 400 nm. Most voltages were 250-300 mV below the Shockley-Queisser limit for their bandgap. Electroluminescence intensity tracked well with the respective voltage deficits. Fill factor (FF) was as high as 95% of the maximum for each device's respective current and voltage, with higher FF corresponding to lower diode quality factors (~1.3). An in-depth analysis of FF losses determined that diode quality reflected in the quality factor, voltage-dependent photocurrent, and, to a lesser extent, the parasitic resistances are the limiting factors. As a result, different absorber processes and device structures led to a range of electrical and physical characteristics, yet this investigation showed that multiple fabrication pathways could lead to high-quality and high-efficiency solar cells.

14 SOLAR ENERGY↗

Effect of Window-Layer Materials on p-n Junction Location in Cu(In,Ga)Se 2 Solar Cells

We report on measurements of junction location in Cu(In,Ga)Se $_{2}$ (CIGS) solar cells with different window-layer materials by nm-resolution electrical potential/field profiling across the junction using Kelvin probe force microscopy imaging on cross-section of the devices. The results illustrate that the device with a CdS window layer (CdS/CIGS) has a buried homojunction located inside the CIGS absorber with ~40-nm junction depth, whereas the ZnOS/CIGS devices with and without partial electrolyte treatment prior to the window-layer deposition are similar, exhibiting a heterointerface junction. This junction location may contribute in part to the highest efficiency of the CdS/CIGS device among the three devices.

14 SOLAR ENERGY↗

Tailoring MgZnO/CdSeTe Interfaces for Photovoltaics

Mg x Zn 1-x O (MZO) shows great promise to replace CdS as a buffer layer in CdTe-based solar cells. It is more transparent, and the MZO bandgap and electron density can be tuned, thus providing flexibility in controlling the conduction band offsets and recombination rates between transparent conductive oxide/MZO and MZO/CdSeTe interfaces. Integrating this material into solar cell devices has been frustrated by the common observation of abnormal current-voltage curves. Simulations indicate that this anomalous behavior can be attributed to front interface barrier effects. Experiments demonstrate that this common MZO interface problem can be resolved experimentally by surface preparation, preheat steps, and removing oxygen during absorber deposition and CdCl 2 treatment. Oxygen during the cell fabrication process is likely to alter MZO properties and MZO/CdSeTe band alignment. After addressing these interface issues and modest optimization, devices with high short-circuit density of 29 mA/cm 2 and efficiency above 16% are demonstrated.

14 SOLAR ENERGY↗

Dual-Wavelength Time-Resolved Photoluminescence Study of CdSe x Te 1-x Surface Passivation via Mg y Zn 1-y O and Al 2 O 3

Voltage loss is currently one of the biggest challenges facing cadmium telluride (CdTe) based photovoltaics. Determining the location(s) of major voltage loss within the device stack (e.g., front/back interface, grain boundaries) is therefore of primary interest. Here, we present a custom-built time-resolved photoluminescence system with two excitation wavelengths - 670 (standard) and 405 nm - to probe the device stack at depths of approximately 130 and 35 nm, respectively; their comparison helps differentiate interface and bulk contributions to carrier lifetime. We apply this system to examine the passivation effect of two significant recent advances in CdTe: the incorporation of Se to form graded CdSe x Te 1-x and the replacement of CdS with Mg y Zn 1-y O. It is found that x = 0.2 Se is required to obtain lifetime improvements, primarily in the bulk. Additionally, evidence for trapping at the Mg y Zn 1-y O/CdSe x Te 1-x interface was observed. Furthermore, this indicates further work is required to sufficiently passivate the front interface.

CdSeTe↗

Emitter Choice for Epitaxial CdTe Solar Cells

High-quality epitaxial CdTe layers with low defect density and high carrier concentration have been demonstrated by several research groups. Nevertheless, one primary challenge for high-performance epitaxial CdTe solar cells is how to choose a suitable emitter partner for the junction formation. The numerical simulations show that a type I heterojunction with small conduction band offset (0.1 eV = ..delta..Ec = 0.3 eV) is necessary to maintain a good cell efficiency even with large interface recombination. Otherwise, a small 'cliff' can assist interface recombination causing smaller Voc, and a large 'spike' (..delta..Ec = 0.4 eV) can impede the photo current and lead to a reduction of JSC and FF. Among the three possible emitters, CdS, CdMgTe, and MgZnO, CdMgTe (with ~30% Mg) and MgZnO (with ~ 20% Mg) are likely to be a better choice since their type-I junction can tolerate a larger density of interface defects.

14 SOLAR ENERGY↗

Determination of the Electrical Junction in Cu(In, Ga)Se2 and Cu2ZnSnSe4 Solar Cells with 20-nm Spatial Resolution

We located the electrical junction (EJ) of Cu(In, Ga)Se2 (CIGS) and Cu2ZnSnSe4 (CZTS) solar cells with ~20-nm accuracy using a scanning capacitance spectroscopy (SCS) technique. A procedure was developed to prepare the cross-sectional samples and grow critical high-quality insulating layers for the SCS measurement. We found that CIGS has a buried homojunction with the EJ located at ~40 nm inside the CIGS/CdS interface. An n-type CIGS was probed in the region 10-30 nm away from the interface. By contrast, the CZTS/CdS cells have a heterointerface junction with a shallower EJ (~20 nm) than CIGS. The EJ is ~20 nm from the CZTS/CdS interface, which is consistent with asymmetrical carrier concentrations of the p-CZTS and n-CdS in a heterojunction cell. The unambiguous determination of the junction locations helped explain the large open circuit voltage difference between the state-of-the-art devices of CIGS and CZTS.

14 SOLAR ENERGY↗