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At least 757 records · Page 42

Evidence of Processing Non-Idealities in 4H-SiC Integrated Circuits Fabricated With Two Levels of Metal Interconnect

The fabrication and prolonged 500 C electrical testing of 4H-SiC junction field effect transistor (JFET) integrated circuits (ICs) with two levels of metal interconnect is reported in another submission to this conference proceedings. While some circuits functioned more than 3000 hours at 500 C, the majority of packaged ICs from this wafer electrically failed after less than 200 hours of operation in the same test conditions. This work examines the root physical degradation and failure mechanisms believed responsible for observed large discrepancies in 500 C operating time. Evidence is presented for four distinct issues that significantly impacted 500 C IC operational yield and lifetime for this wafer.

JFET↗

Evidence of Processing Non-Idealities in 4H-SiC Integrated Circuits Fabricated with Two Levels of Metal Interconnect

The fabrication and prolonged 500 C electrical testing of 4H-SiC junction field effect transistor (JFET) integrated circuits (ICs) with two levels of metal interconnect is reported in another submission to this conference proceedings. While some circuits functioned more than 1000 hours at 500 C, the majority of packaged ICs from this wafer electrically failed after less than 200 hours of operation in the same test conditions. This work examines the root physical degradation and failure mechanisms believed responsible for observed large discrepancies in 500 C operating time. Evidence is presented for four distinct issues that significantly impacted 500 C IC operational yield and lifetime for this wafer.

Microelectronics↗

Flexible Electrostatic Technologies for Capture and Handling, Phase 1

Fundamental to many of NASA's in-space transportation missions is the capture and handling of various objects and vehicles in various orbits for servicing, debris disposal, sample retrieval, and assembly without the benefit of sufficient grapple fixtures and docking ports. To perform similar material handling tasks on Earth, pincher grippers, suction grippers, or magnetic chucks are used, but are unable to reliably grip aluminum and composite spacecraft, insulation, radiators, solar arrays, or extra-terrestrial objects in the vacuum of outer space without dedicated handles in the right places. The electronic Flexible Electrostatic Technologies for space Capture and Handling (FETCH) will enable reliable and compliant gripping (soft dock) of practically any object in various orbits or surfaces without dedicated mechanical features, very low impact capture, and built-in proximity sensing without any conventional actuators. Originally developed to handle semiconductor and glass wafers during vacuum chamber processing without contamination, the normal rigid wafer handling chucks are replaced with thin metal foil segments laminated in flexible insulation driven by commercial off-the-shelf solid state, high-voltage power supplies. Preliminary testing in NASA Marshall Space Flight Center's (MSFC's) Flat Floor Robotics Lab demonstrated compliant alignment and gripping with a full-sized, 150-lb microsat mockup and translation before a clean release with a flip of a switch. The flexible electrostatic gripper pads can be adapted to various space applications with different sizes, shapes, and foil electrode layouts even with openings through the gripper pads for addition of guidance sensors or injection of permanent adhesives. With gripping forces estimated between 0.5 and 2.5 lb/in2 or 70-300 lb/ft2 of surface contact, the FETCH can turn on and off rapidly and repeatedly to enable sample handling, soft docking, in-space assembly, precision relocation, and surface translation for accurate anchoring.

Bryan, Thomas↗

Integrated Multi-Color Light Emitting Device Made with Hybrid Crystal Structure

An integrated hybrid crystal Light Emitting Diode ("LED") display device that may emit red, green, and blue colors on a single wafer. The various embodiments may provide double-sided hetero crystal growth with hexagonal wurtzite III-Nitride compound semiconductor on one side of (0001) c-plane sapphire media and cubic zinc-blended III-V or II-VI compound semiconductor on the opposite side of c-plane sapphire media. The c-plane sapphire media may be a bulk single crystalline c-plane sapphire wafer, a thin free standing c-plane sapphire layer, or crack-and-bonded c-plane sapphire layer on any substrate. The bandgap energies and lattice constants of the compound semiconductor alloys may be changed by mixing different amounts of ingredients of the same group into the compound semiconductor. The bandgap energy and lattice constant may be engineered by changing the alloy composition within the cubic group IV, group III-V, and group II-VI semiconductors and within the hexagonal III-Nitrides.

Park, Yeonjoon↗

Assembly and Integration Process of the First High Density Detector Array for the Atacama Cosmology Telescope

The Advanced ACTPol (AdvACT) upgrade on the Atacama Cosmology Telescope (ACT) consists of multichroicTransition Edge Sensor (TES) detector arrays to measure the Cosmic Microwave Background (CMB) polarization anisotropies in multiple frequency bands. The first AdvACT detector array, sensitive to both 150 and 230 GHz, is fabricated on a 150 mm diameter wafer and read out with a completely different scheme compared to ACTPol. Approximately 2000 TES bolometers are packed into the wafer leading to both a much denser detector density and readout circuitry. The demonstration of the assembly and integration of the AdvACT arrays is important for the next generation CMB experiments, which will continue to increase the pixel number and density. We present the detailed assembly process of the first AdvACT detector array.

Li, Yaqiong↗

Nuclear Rocket Ceramic Metal Fuel Fabrication Using Tungsten Powder Coating and Spark Plasma Sintering

Nuclear thermal propulsion is an enabling technology for crewed Mars missions. An investigation was conducted to evaluate spark plasma sintering (SPS) as a method to produce tungsten-depleted uranium dioxide (W-dUO2) fuel material when employing fuel particles that were tungsten powder coated. Ceramic metal fuel wafers were produced from a blend of W-60vol% dUO2 powder that was sintered via SPS. The maximum sintering temperatures were varied from 1,600 to 1,850 C while applying a 50-MPa axial load. Wafers exhibited high density (>95% of theoretical) and a uniform microstructure (fuel particles uniformly dispersed throughout tungsten matrix).

Barnes, M. W.↗

Integrated Multi-Color Light Emitting Device Made with Hybrid Crystal Structure

An integrated hybrid crystal Light Emitting Diode ("LED") display device that may emit red, green, and blue colors on a single wafer. The various embodiments may provide double-sided hetero crystal growth with hexagonal wurtzite III-Nitride compound semiconductor on one side of (0001) c-plane sapphire media and cubic zinc-blended III-V or II-VI compound semiconductor on the opposite side of c-plane sapphire media. The c-plane sapphire media may be a bulk single crystalline c-plane sapphire wafer, a thin free standing c-plane sapphire layer, or crack-and-bonded c-plane sapphire layer on any substrate. The bandgap energies and lattice constants of the compound semiconductor alloys may be changed by mixing different amounts of ingredients of the same group into the compound semiconductor. The bandgap energy and lattice constant may be engineered by changing the alloy composition within the cubic group IV, group III-V, and group II-VI semiconductors and within the hexagonal III-Nitrides.

Park, Yeonjoon↗

Superconducting Vacuum-Gap Crossovers for High Performance Microwave Applications

The design and fabrication of low-loss wide-bandwidth superconducting vacuum-gap crossovers for high performance millimeter wave applications are described. In order to reduce ohmic and parasitic losses at millimeter wavelengths a vacuum gap is preferred relative to dielectric spacer. Here, vacuum-gap crossovers were realized by using a sacrificial polymer layer followed by niobium sputter deposition optimized for coating coverage over an underlying niobium signal layer. Both coplanar waveguide and microstrip crossover topologies have been explored in detail. The resulting fabrication process is compatible with a bulk micro-machining process for realizing waveguide coupled detectors, which includes sacrificial wax bonding, and wafer backside deep reactive ion etching for creation of leg isolated silicon membrane structures. Release of the vacuum gap structures along with the wax bonded wafer after DRIE is implemented in the same process step used to complete the detector fabrication. 

superconductor↗

A Roadmap to Interstellar Flight

In the nearly 60 years of spaceflight we have accomplished wonderful feats of exploration that have shown the incredible spirit of the human drive to explore and understand our universe. Yet in those 60 years we have barely left our solar system with the Voyager 1 spacecraft launched in 1977 finally leaving the solar system after 37 years of flight at a speed of 17 km/s or less than 0.006% the speed of light. As remarkable as this is we will never reach even the nearest stars with our current propulsion technology in even 10 millennium. We have to radically rethink our strategy or give up our dreams of reaching the stars, or wait for technology that does not currently exist. While we all dream of human spaceflight to the stars in a way romanticized in books and movies, it is not within our power to do so, nor it is clear that this is the path we should choose. We posit a technological path forward, that while not simple, it is within our technological reach. We propose a roadmap to a program that will lead to sending relativistic probes to the nearest stars and will open up a vast array of possibilities of flight both within our solar system and far beyond. Spacecraft from gram level complete spacecraft on a wafer ("wafersats") that reach more than _ c and reach the nearest star in 20 years to spacecraft with masses more than 105 kg (100 tons) that can reach speeds of greater than 1000 km/s. These systems can be propelled to speeds currently unimaginable with existing propulsion technologies. To do so requires a fundamental change in our thinking of both propulsion and in many cases what a spacecraft is. In addition to larger spacecraft, some capable of transporting humans, we consider functional spacecraft on a wafer, including integrated optical communications, imaging systems, photon thrusters, power and sensors combined with directed energy propulsion. The costs can be amortized over a very large number of missions beyond relativistic spacecraft as such planetary defense, beamed energy for distant spacecraft, sending power back to Earth, stand-off composition analysis of solar system targets, long range laser communications, SETI searches and even terra forming. The human factor of exploring the nearest stars and exo-planets would be a profound voyage for humanity, one whose non-scientific implications would be enormous. It is time to begin this inevitable journey far beyond our home.

Interstellar Flight↗

Molten Target Sputtering: Non-Conventional Method for High Mobility Si0.15Ge0.85 Growth at 500°C

Since electrons travel over 100 times faster in Silicon-Germanium (SiGe) than in pure Si due to the low effective masses associated with Ge and SiGe-based devices continue to replace Si-based solid-state electronic devices. SiGe thin film on sapphire was successfully grown at 890°C, using a magnetron sputtering system within heteroepitaxial framework. However, SiGe growth at 890oC is a costly and difficult process to produce as a uniform wafer for semiconductor device manufacturing due to thermal soak times, and geometric thermal shadowing from the wafer holder. To leverage the semiconducting capabilities of SiGe, novel processing techniques for SiGe film growth with decreased thermal loading are required. This paper introduces the Molten Target Sputtering (MTS) method that produces high mobility SiGe on sapphire below 500°C. This non-conventional method has the advantage of high kinetic energy, high-energy latency, and high flux density of sputtered atoms by combining benefits of both magnetron sputtering and thermal evaporation. For the MTS method, a 1~2 mm (depth and width) ring-shaped groove was cut between the center magnet and surrounded by electromagnets creating a circular cavity between the copper plate and source target materials that melt the target material. The SiGe grown from the MTS shows continuous morphology and 99.7% single crystal Si0.15Ge0.85 films. The Hall electron mobilities of the Si0.15Ge0.85 are 456 sq. cmV(exp -1)s(exp -1) and 123.9 sq. cmV(exp -1)s(exp -1) at 5.59 x 10(exp 18) cubic cm and 3.5 x 10(exp 20) cubic cm carrier concentration at 22.38°C, respectively. This is approximately 5.5 times higher than that of Si and similar to the Ge value at equivalent carrier concentrations and temperatures.

High mobility SiGe↗

A Roadmap to Interstellar Flight

In the nearly 60 years of spaceflight we have accomplished wonderful feats of exploration that have shown the incredible spirit of the human drive to explore and understand our universe. Yet in those 60 years we have barely left our solar system with the Voyager 1 spacecraft launched in 1977 finally leaving the solar system after 37 years of flight at a speed of 17 km/s or less than 0.006% the speed of light. As remarkable as this, to reach even the nearest stars with our current propulsion technology will take 100 millennium. We have to radically rethink our strategy or give up our dreams of reaching the stars, or wait for technology that does not currently exist. While we all dream of human spaceflight to the stars in a way romanticized in books and movies, it is not within our power to do so, nor it is clear that this is the path we should choose. We posit a path forward, that while not simple, it is within our technological reach. We propose a roadmap to a program that will lead to sending relativistic probes to the nearest stars and will open up a vast array of possibilities of flight both within our solar system and far beyond. Spacecraft from gram level complete spacecraft on a wafer (“wafersats”) that reach more than ¼ c and reach the nearest star in 20 years to spacecraft with masses more than 105 kg (100 tons) that can reach speeds of greater than 1000 km/s. These systems can be propelled to speeds currently unimaginable with existing propulsion technologies. To do so requires a fundamental change in our thinking of both propulsion and in many cases what a spacecraft is. In addition to larger spacecraft, some capable of transporting humans, we consider functional spacecraft on a wafer, including integrated optical communications, imaging systems, photon thrusters, power and sensors combined with directed energy propulsion. The costs can be amortized over a very large number of missions beyond relativistic spacecraft as such planetary defense, beamed energy for distant spacecraft, sending power back to Earth, stand-off composition analysis of solar system targets, long range laser communications, SETI searches and even terra forming. The human factor of exploring the nearest stars and exo-planets would be a profound voyage for humanity, one whose non-scientific implications would be enormous. It is time to begin this inevitable journey far beyond our home.

Lubin, Philip↗

On-Orbit Manufacturing From Orbital Factories to In Situ Resource Utilization

This webinar will review commercial prospects for manufacturing in orbit. Doing business in space is rapidly becoming more reliable, affordable and accessible. From 2010 to 2015 launch prices went down by a factor of 10 or more, to about $5,000kg while investments into Space 2.0 companies and technologies are closing in on $2.5 Billion (New Space Global). With three commercial suppliers (SpaceX, Orbital ATK and Sierra Nevada Corp) to Earths orbits, mission frequency is improving dramatically. Moreover, private space companies (SpaceX Reusable Dragon Lab; Bigelows B330) are also scouting the opportunities of renting or selling modules as platforms for orbital free-flying facilities; modules that can be used for automated fabrication to manned experiments.Topics addressed in the webinar include: 1. Case studies of unique competitive advantages that can be gained from microgravity and space vacuum: wafer reprocessing, fiber optics, crystal growth;2. Prospective solar power orbital data centers;3. Reuse and recycling of orbital debris as a possible feedstock for robotic 3D fabrication potentially in the vacuum as well as inside facilities;4. The story behind the original WakeShield wafer fabrication facility and its relevance to todays activities;5. Energy needs for on-orbit manufacturing6. Environmental value proposition of on-orbit manufacturing for products with toxic byproducts or excessively large green house gases footprints;7. Longer term scenario of flexible, connected, automated, intelligent and sustainable orbital factories of the future.Opening up a less-appreciated aspect of NewSpace, this webinar will be of high interest to CTOs, Directors and Managers from product development to RD, Innovation Strategy leaders, and investors, across many different industrial verticals (materials, electronics, pharmaceuticals, advanced sustainable manufacturing, bioengineering, etc.)and anyone trying to understand what value space can have for their business in the near and far future.

Cozmuta, Ioana↗

TEM Characterization of Solar Wind Effects on Genesis Mission Silicon Collectors

The Genesis Discovery Mission passively allowed solar wind (SW) to implant into substrates during exposure times up to ~853 days from 2001 to 2004. The spacecraft then returned the SW to Earth for analysis. Substrates included semiconductor wafers (silicon, sapphire, and germanium), as well as a number of thin films supported by either silicon or sapphire wafers. During flight, subsets of the SW collectors were exposed to one of 4 SW regimes: bulk solar wind, coronal hole solar wind (CH, high speed), interstream solar wind (IS, low speed) or coronal mass ejections (CMEs). Each SW regime had a different composition and range of ion speeds and, during their collection, uniquely changed their host SW collector. This study focuses on bulk vs IS SW effects on CZ silicon.

Allums, K. K.↗

Developing a New Generation of Integrated Micro-Spec Far Infrared Spectrometers for the EXperiment for Cryogenic Large-Aperture Intensity Mapping (EXCLAIM)

The current state of far-infrared astronomy drives the need to develop compact, sensitive spectrometers for future space and ground-based instruments. Here we present details of the µ-Spec spectrometers currently in development for the far-infrared balloon mission EXCLAIM. The spectrometers are designed to cover the 555 – 714 µm range with a resolution of R = λ/∆λ = 512 at the 638 µm band center. The spectrometer design incorporates a Rowland grating spectrometer implemented in a parallel plate waveguide on a low-loss single-crystal Si chip, employing Nb microstrip planar transmission lines and thin-film Al kinetic inductance detectors (KIDs). The EXCLAIM µ-Spec design is an advancement upon a successful R = 64 µ-Spec prototype, and can be considered a sub-mm superconducting photonic integrated circuit (PIC) that combines spectral dispersion and detection. The design operates in a single M=2 grating order, allowing one spectrometer to cover the full EXCLAIM band without requiring a multi-order focal plane. The EXCLAIM instrument will fly six spectrometers, which are fabricated on a single 150 mm diameter Si wafer. Fabrication involves a flip-wafer-bonding process with patterning of the superconducting layers on both sides of the Si dielectric. The spectrometers are designed to operate at 100 mK, and will include 355 Al KID detectors targeting a goal of NEP ∼8 × 10−19 W/√( Hz). We summarize the design, fabrication, and ongoing development of these µ-Spec spectrometers for EXCLAIM.

Carolyn G. Volpert↗

Sample Polishing Without Epoxy

In recent years, we have received requests for meteorite sample sections to be prepared without using epoxy impregnation or mounting. The reasoning for these requests ranges from potential contamination of analyses from epoxy chemical components to degradation of instrumental vacuum from epoxy outgassing (e.g., SEM, SIMS, EPMA, etc.). An alternative approach that we employ involves sawing off a 1-5 mm thick wafer of the sample. The wafer is ground using silica carbide lapping media wetted with 190 proof ethyl alcohol to make both sides flat and parallel. The sample is then polished on one or both sides using diamond paste or dry diamond powder on a rotating lap wheel until the desired finish is obtained. The sample is cleaned in between steps using 200 proof ethyl alcohol in an ultrasonic cleaner. Friable and altered samples need to have higher thickness in order for polishing to be attempted. Without epoxy to hold the sample together or a glass slide for backing, the sample needs additional material to provide the necessary support structure. The machining steps of this process need to be undertaken at a much slower speed than in traditional thin or thick section preparation.

Meteorite↗

Design and Characterization of New 90 GHz Detectors for the Cosmology Large Angular Scale Surveyor (CLASS)

The Cosmology Large Angular Scale Surveyor (CLASS) is a polarization-sensitive telescope array located at an altitude of 5,200 m in the Chilean Atacama Desert. CLASS is designed to measure “E-mode” (even parity) and “B-mode” (odd parity) polarization patterns in the Cosmic Microwave Background (CMB) over large angular scales with the aim of improving our understanding of inflation, reionization, and dark matter. CLASS is currently observing with three telescopes covering four frequency bands: one at 40 GHz (Q); one at 90 GHz (W1); and one dichroic system at 150/220 GHz (G). In these proceedings, we discuss the updated design and in-lab characterization of new 90 GHz detectors. The new detectors include design changes to the transition-edge sensor (TES) bolometer architecture, which aim to improve stability and optical efficiency. We assembled and tested four new detector wafers, to replace four modules of the W1 focal plane. These detectors were installed into the W1 telescope, and will achieve first light in the austral winter of 2022. We present electrothermal parameters and bandpass measurements from in-lab dark and optical testing. From in-lab dark tests, we also measure a median NEP of 12.3 aW √ s across all four wafers about the CLASS signal band, which is below the expected photon NEP of 32 aW √ s from the field. We therefore expect the new detectors to be photon noise limited."

Carolina Nunez↗

Recent Progress in Extreme Environment Durable SiC JFET-R Integrated Circuit Technology

This work updates recent progress made by NASA Glenn Research Center on further advancement of its uniquely durable silicon carbide junction field effect transistor and resistor (SiC JFET-R) integrated circuit (IC) technology since HiTEC 2021. Key fabrication process improvements compared to earlier NASA Glenn IC prototype runs have been ascertained via extensive “back end of line” (BEOL) processing experiments conducted on practice wafers over the past two years. The resulting changes to the BEOL process flow employed in the fabrication of “Generation 12” SiC JFET-R wafers are described. The NASA Glenn SiC JFET-R IC prototype “Generation 12” chipset design realizes significantly higher complexity digital and analog integrated ICs aimed at flexibly implementing a broad variety of mission-enabling extreme-environment electronics demonstrations. SPICE simulations have verified circuit designs ranging from simple amplification of analog sensor signals up through long-duration Venus lander operations and microprocessor-based of electric motor drive.

Silicon Carbide↗

Recent Progress in Extreme Environment Durable SiC JFET-R Integrated Circuit Technology

This work updates recent progress made by NASA Glenn Research Center on further advancement of its uniquely durable silicon carbide junction field effect transistor and resistor (SiC JFET-R) integrated circuit (IC) technology since HiTEC 2021. Key fabrication process improvements compared to earlier NASA Glenn IC prototype runs have been ascertained via extensive “back end of line” (BEOL) processing experiments conducted on practice wafers over the past two years. The resulting changes to the BEOL process flow employed in the fabrication of “Generation 12” SiC JFET-R wafers are described. The NASA Glenn SiC JFET-R IC prototype “Generation 12” chipset design realizes significantly higher complexity digital and analog integrated ICs aimed at flexibly implementing a broad variety of mission-enabling extreme-environment electronics demonstrations. SPICE simulations have verified circuit designs ranging from simple amplification of analog sensor signals up through long-duration Venus lander operations and microprocessor-based of electric motor drive.

Silicon Carbide↗