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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 757 records · Page 42
All sourcesNASA NTRSDOE OSTI
DOE OSTI2013

Tunneling magnetoresistance tuned by a vertical electric field in an AA-stacked graphene bilayer with double magnetic barriers

We investigate the effect of a vertical electric field on the electron tunneling and magnetoresistance in an AA-stacked graphene bilayer modulated by the double magnetic barriers with parallel or antiparallel configuration. The results show that the electronic transmission properties in the system are sensitive to the magnetic-barrier configuration and the bias voltage between the graphene layers. In particular, it is found that for the antiparallel configuration, within the low energy region, the blocking effect is more obvious compared with the case for the parallel configuration, and even there may exist a transmission spectrum gap which can be arbitrarily tuned by the field-induced interlayer bias voltage. We also demonstrate that the significant discrepancy between the conductance for both parallel and antiparallel configurations would result in a giant tunneling magnetoresistance ratio, and further the maximal magnetoresistance ratio can be strongly modified by the interlayer bias voltage. This leads to the possible realization of high-quality magnetic sensors controlled by a vertical electric field in the AA-stacked graphene bilayer.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

New vertical cryostat for the high field superconducting magnet test station at CERN

In the framework of the R and D program for new superconducting magnets for the Large Hadron Collider accelerator upgrades, CERN is building a new vertical test station to test high field superconducting magnets of unprecedented large size. This facility will allow testing of magnets by vertical insertion in a pressurized liquid helium bath, cooled to a controlled temperature between 4.2 K and 1.9 K. The dimensions of the cryostat will allow testing magnets of up to 2.5 m in length with a maximum diameter of 1.5 m and a mass of 15 tons. To allow for a faster insertion and removal of the magnets and reducing the risk of helium leaks, all cryogenics supply lines are foreseen to remain permanently connected to the cryostat. A specifically designed 100 W heat exchanger is integrated in the cryostat helium vessel for a controlled cooling of the magnet from 4.2 K down to 1.9 K in a 3 m{sup 3} helium bath. This paper describes the cryostat and its main functions, focusing on features specifically developed for this project. The status of the construction and the plans for assembly and installation at CERN are also presented.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2014

Characterization of vertical strain silicon MOSFET incorporating dielectric pocket (SDP-VMOSFET)

The vertical Metal-Oxide-Semiconductor Field-Effect-Transistor (MOSFET) leads to a double channel width that can increase the packaging density. The strained silicon MOSFET was introduced to modify the carrier transport properties of silicon in order to enhance transport of both electrons and holes within strained layer. Dielectric pocket was act to control encroachment of the drain doping into the channel and reduce short channel effects (SCE). SDP-VMOSFET which was a combination of those advantages was proposed to overcome the SCE in term of leakage current, threshold voltage roll-off also Drain Induce Barrier Lowering (DIBL). As a result, SDP-VMOSFET produces a better threshold voltage and DIBL compared to related structures. Meanwhile, it gives slightly increased for leakage current compared to Vertical MOSFET Incorporating Dielectric Pocket. The characteristics of the SDP-VMOSFET are analyzed in order to optimize the performance of the device and leading to the next generation of IC technology.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Operating principles of vertical transistors based on monolayer two-dimensional semiconductor heterojunctions

A vertical transistor based on a double gated, atomically thin heterojunction is theoretically examined. Both p-type and n-type transistor operations can be conveniently achieved by using one of the two gates as the switching gate. The transistor shows excellent saturation of output I-V characteristics due to drain-induced depletion and lack of tunneling barrier layers. The subthreshold slope could be below the thermionic limit due to band filtering as the switching mechanism. The atomically thin vertical PN heterojunction can be electrostatically modulated from a type II heterojunction to a broken bandgap alignment, which is preferred for maximizing the on-current.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

A systematic approach to vertically excited states of ethylene using configuration interaction and coupled cluster techniques

A systematic sequence of configuration interaction and coupled cluster calculations were used to describe selected low-lying singlet and triplet vertically excited states of ethylene with the goal of approaching the all electron, full configuration interaction/complete basis set limit. Included among these is the notoriously difficult, mixed valence/Rydberg {sup 1}B{sub 1u} V state. Techniques included complete active space and iterative natural orbital configuration interaction with large reference spaces which led to variational spaces of 1.8 × 10{sup 9} parameters. Care was taken to avoid unintentionally biasing the results due to the widely recognized sensitivity of the V state to the details of the calculation. The lowest vertical and adiabatic ionization potentials to the {sup 2}B{sub 3u} and {sup 2}B{sub 3} states were also determined. In addition, the heat of formation of twisted ethylene {sup 3}A{sub 1} was obtained from large basis set coupled cluster theory calculations including corrections for core/valence, scalar relativistic and higher order correlation recovery.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2014

Vertical vibration and shape oscillation of acoustically levitated water drops

We present the vertical harmonic vibration of levitated water drops within ultrasound field. The restoring force to maintain such a vibration mode is provided by the resultant force of acoustic radiation force and drop gravity. Experiments reveal that the vibration frequency increases with the aspect ratio for drops with the same volume, which agrees with the theoretical prediction for those cases of nearly equiaxed drops. During the vertical vibration, the floating drops undergo the second order shape oscillation. The shape oscillation frequency is determined to be twice the vibration frequency.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

1.9 W continuous-wave single transverse mode emission from 1060 nm edge-emitting lasers with vertically extended lasing area

High-brightness edge-emitting semiconductor lasers having a vertically extended waveguide structure emitting in the 1060 nm range are investigated. Ridge waveguide (RW) lasers with 9 μm stripe width and 2.64 mm cavity length yield highest to date single transverse mode output power for RW lasers in the 1060 nm range. The lasers provide 1.9 W single transverse mode optical power under continuous-wave (cw) operation with narrow beam divergences of 9° in lateral and 14° (full width at half maximum) in vertical direction. The beam quality factor M{sup 2} is less than 1.9 up to 1.9 W optical power. A maximum brightness of 72 MWcm{sup −2}sr{sup −1} is obtained. 100 μm wide and 3 mm long unpassivated broad area lasers provide more than 9 W optical power in cw operation.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

High-power narrow-vertical-divergence photonic band crystal laser diodes with optimized epitaxial structure

900 nm longitudinal photonic band crystal (PBC) laser diodes with optimized epitaxial structure are fabricated. With a same calculated fundamental-mode divergence, stronger mode discrimination is achieved by a quasi-periodic index modulation in the PBC waveguide than a periodic one. Experiments show that the introduction of over 5.5 μm-thick PBC waveguide contributes to only 10% increment of the internal loss for the laser diodes. For broad area PBC lasers, output powers of 5.75 W under continuous wave test and over 10 W under quasi-continuous wave test are reported. The vertical divergence angles are 10.5° at full width at half maximum and 21.3° with 95% power content, in conformity with the simulated angles. Such device shows a prospect for high-power narrow-vertical-divergence laser emission from single diode laser and laser bar.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Facile construction of vertically aligned EuS-ZnO hybrid core shell nanorod arrays for visible light driven photocatalytic properties

We demonstrated the development of coupled semiconductor in the form of hybrid heterostructures for significant advancement in catalytic functional materials. In this article, we report the preparation of vertically aligned core shell ZnO-EuS nanorod photocatalyst arrays by a simple chemical solution process followed by sulfudation process. The XRD pattern confirmed formation of the hexagonal wurtzite structure of ZnO and cubic nature of the EuS. Cross sectional FESEM images show vertical rod array structure, and the size of the nanorods ranges from 80 to 120 nm. UV-Vis DRS spectra showed that the optical absorption of ZnO was significantly enhanced to the visible region by modification with EuS surfaces. TEM study confirmed that the surface of ZnO was drastically improved by the modification with EuS nanoparticle. The catalytic activity of EuS−ZnO core shell nanorod arrays were evaluated by the photodegradation of Methylene Blue (MB) dye under visible irradiation. The results revealed that the photocatalytic activity of EuS−ZnO was much higher than that of ZnO under natural sunlight. EuS−ZnO was found to be stable and reusable without appreciable loss of catalytic activity up to four consecutive cycles.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Vertical electron transport in van der Waals heterostructures with graphene layers

We propose and analyze an analytical model for the self-consistent description of the vertical electron transport in van der Waals graphene-layer (GL) heterostructures with the GLs separated by the barriers layers. The top and bottom GLs serve as the structure emitter and collector. The vertical electron transport in such structures is associated with the propagation of the electrons thermionically emitted from GLs above the inter-GL barriers. The model under consideration describes the processes of the electron thermionic emission from and the electron capture to GLs. It accounts for the nonuniformity of the self-consistent electric field governed by the Poisson equation which accounts for the variation of the electron population in GLs. The model takes also under consideration the cooling of electrons in the emitter layer due to the Peltier effect. We find the spatial distributions of the electric field and potential with the high-electric-field domain near the emitter GL in the GL heterostructures with different numbers of GLs. Using the obtained spatial distributions of the electric field, we calculate the current-voltage characteristics. We demonstrate that the Peltier cooling of the two-dimensional electron gas in the emitter GL can strongly affect the current-voltage characteristics resulting in their saturation. The obtained results can be important for the optimization of the hot-electron bolometric terahertz detectors and different devices based on GL heterostructures.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Electrokinetics of scalable, electric-field-assisted fabrication of vertically aligned carbon-nanotube/polymer composites

Composite thin films incorporating vertically aligned carbon nanotubes (VACNTs) offer promise for a variety of applications where the vertical alignment of the CNTs is critical to meet performance requirements, e.g., highly permeable membranes, thermal interfaces, dry adhesives, and films with anisotropic electrical conductivity. However, current VACNT fabrication techniques are complex and difficult to scale up. In this paper, we describe a solution-based, electric-field-assisted approach as a costeffective and scalable method to produce large-area VACNT composites. Multiwall-carbon nanotubes are dispersed in a polymeric matrix, aligned with an alternating-current (AC) electric field, and electrophoretically concentrated to one side of the thin film with a direct-current (DC) component to the electric field. This approach enables the fabrication of highly concentrated, individually aligned nanotube composites from suspensions of very dilute (Φ=4×10 –4 ) volume fraction. We experimentally investigate the basic electrokinetics of nanotube alignment under AC electric fields, and show that simple models can adequately predict the rate and degree of nanotube alignment using classical expressions for the induced dipole moment, hydrodynamic drag, and the effects of Brownian motion. The composite AC þ DC field also introduces complex fluid motion associated with AC electro-osmosis and the electrochemistry of the fluid/electrode interface. We experimentally probe the electric-field parameters behind these electrokinetic phenomena, and demonstrate, with suitable choices of processing parameters, the ability to scalably produce large-area composites containing VACNTs at number densities up to 10 10 nanotubes/cm 2 . This VACNT number density exceeds that of previous electric-fieldfabricated composites by an order of magnitude, and the surface-area coverage of the 40nm VACNTs is comparable to that of chemical-vapor-deposition-grown arrays of smaller-diameter nanotubes.

42 ENGINEERING↗
DOE OSTI2015

Schottky-contacted vertically self-aligned ZnO nanorods for hydrogen gas nanosensor applications

Vertically well aligned ZnO nanorods (NRs) were grown on Si(100) substrate using RF magnetron sputtering technique. Scanning electron microscopy images confirms uniform distribution of NRs on 2 in. wafer with average diameter, height and density being ∼75 nm, ∼850 nm, and ∼1.5 × 10{sup 10} cm{sup −2}, respectively. X-ray diffraction reveals that the ZnO NRs are grown along c-axis direction with wurtzite crystal structure. Cathodoluminescence spectroscopy, which shows a single strong peak around 3.24 eV with full width half maxima 130 meV, indicates the high crystalline and optical quality of ZnO and very low defect density. Vertically aligned nanosensors were fabricated by depositing gold circular Schottky contacts on ZnO NRs. Resistance responses of nanosensors were observed in the range from 50 to 150 °C in 1% and 5% hydrogen in argon environment, which is below and above the explosive limit (4%) of hydrogen in air. The nanosensor's sensitivity increases from 11% to 67% with temperature from 50 to 150 °C and also shows fast response time (9–16 s) and moderate recovery time (100–200 s). A sensing mechanism is proposed based on Schottky barrier changes at heterojunctions and change in depletion region of NRs.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Boron doped Si rich oxide/SiO{sub 2} and silicon rich nitride/SiN{sub x} bilayers on molybdenum-fused silica substrates for vertically structured Si quantum dot solar cells

Vertically structured Si quantum dots (QDs) solar cells with molybdenum (Mo) interlayer on quartz substrates would overcome current crowding effects found in mesa-structured cells. This study investigates the compatibility between boron (B) doped Si QDs bilayers and Mo-fused silica substrate. Both Si/SiO{sub 2} and Si/SiN{sub x} based QDs bilayers were studied. The material compatibility under high temperature treatment was assessed by examining Si crystallinity, microstress, thin film adhesion, and Mo oxidation. It was observed that the presence of Mo interlayer enhanced the Si QDs size confinement, crystalline fraction, and QDs size uniformity. The use of B doping was preferred compared to phosphine (PH{sub 3}) doping studied previously in terms of better surface and interface properties by reducing oxidized spots on the film. Though crack formation due to thermal mismatch after annealing remained, methods to overcome this problem were proposed in this paper. Schematic diagram to fabricate full vertical structured Si QDs solar cells was also suggested.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Vertical-cavity in-plane heterostructures: Physics and applications

We show that in-plane (lateral) heterostructures realized in vertical cavities with high contrast grating reflectors can be used to significantly modify the anisotropic dispersion curvature, also interpreted as the photon effective mass. This design freedom enables exotic configurations of heterostructures and many interesting applications. The effects of the anisotropic photon effective mass on the mode confinement, mode spacing, and transverse modes are investigated. As a possible application, the method of boosting the speed of diode lasers by engineering the photon-photon resonance is discussed. Based on this platform, we propose a system of two laterally coupled cavities, which shows the breaking of parity-time symmetry in vertical cavity structures.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Spin-dependent transport properties of a GaMnAs-based vertical spin metal-oxide-semiconductor field-effect transistor structure

We fabricate a vertical spin metal-oxide-semiconductor field-effect transistor (spin-MOSFET) structure, which is composed of an epitaxial single-crystal heterostructure with a ferromagnetic-semiconductor GaMnAs source/drain, and investigate its spin-dependent transport properties. We modulate the drain-source current I{sub DS} by ∼±0.5% with a gate-source voltage of ±10.8 V and also modulate I{sub DS} by up to 60% with changing the magnetization configuration of the GaMnAs source/drain at 3.5 K. The magnetoresistance ratio is more than two orders of magnitude higher than that obtained in the previous studies on spin MOSFETs. Our result shows that a vertical structure is one of the hopeful candidates for spin MOSFET when the device size is reduced to a sub-micron or nanometer scale.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Structure and photoluminescence properties of carbon nanotip-vertical graphene nanohybrids

We report on the effective enhancement and tuning of photoluminescence (PL) by combining vertical graphene nanoflakes (VGs) and carbon nanotips (CNTPs). The VGs are grown on the vertical CNTPs by hot filament chemical vapor deposition in the methane environment, where the CNTPs are synthesized on silicon substrates by CH{sub 4}-H{sub 2}-N{sub 2} plasma-enhanced hot filament chemical vapor deposition. The results of field emission scanning electron microscopy, transmission electron microscopy, micro-Raman spectroscopy, and X-ray photoelectron spectroscopy indicate that the VGs can be grown on the CNTP and silicon substrate surfaces with the orientation perpendicular to the surfaces of CNTPs and silicon substrates. The PL properties of VG, CNTP, and CNTP-VG structures are studied using a 325 nm line of He-Cd laser as the excitation source. The PL results indicate that the PL of VGs is enhanced by the CNTPs due to the increasing density of PL emitters, while the PL properties of the nanohybrid system can be tuned. Furthermore, the potential applications of CNTP-VG structures in optoelectronic devices are analyzed. These results contribute to the design of functional graphene-based materials and the development of next-generation optoelectronic devices.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

High-voltage vertical GaN Schottky diode enabled by low-carbon metal-organic chemical vapor deposition growth

Vertical GaN Schottky barrier diode (SBD) structures were grown by metal-organic chemical vapor deposition on free-standing GaN substrates. The carbon doping effect on SBD performance was studied by adjusting the growth conditions and spanning the carbon doping concentration between ≤3 × 1015 cm−3 and 3 × 1019 cm−3. Using the optimized growth conditions that resulted in the lowest carbon incorporation, a vertical GaN SBD with a 6-μm drift layer was fabricated. A low turn-on voltage of 0.77 V with a breakdown voltage over 800 V was obtained from the device.

Cao, Y. (ORCID:0000000185535079)↗
DOE OSTI2016

Hydrothermal growth and characterization of vertically well-aligned and dense ZnO nanorods on glass and silicon using a simple optimizer system

Vertically, well-aligned and high density ZnO nanorods were successfully hydrothermally grown on glass and silicon substrates using a simple and low cost system. The mechanism of synthesis of ZnO nanorods, generated with our system under hydrothermal conditions, is investigated in this report. Field-emission scanning electron microscopy indicated that the fabricated ZnO nanorods on both substrates have hexagonal shape with diameters ranging from 20 nm to 70 nm which grew vertically from the substrate. XRD analysis confirms the formation of wurtzite ZnO phase with a preferred orientation along (002) direction perpendicular on the substrate and enhanced crystallinity. The low value of the tensile strain (0.126 %) revealed that ZnO nanorods preferred to grow along the c-axis for both substrates. Photoluminescence spectra exhibited a strong, sharp UV near band edge emission peak with narrow FWHM values for both samples.

77 NANOSCIENCE AND NANOTECHNOLOGY↗