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DOE OSTI2024

Increasing the Measured Effective Quantum Volume with Zero Noise Extrapolation

Quantum volume is a full-stack benchmark for near-term quantum computers. It quantifies the largest size of a square circuit which can be executed on the target device with reasonable fidelity. Error mitigation is a set of techniques intended to remove the effects of noise present in the computation of noisy quantum computers when computing an expectation value of interest. Effective quantum volume is a proposed metric that applies error mitigation to the quantum volume protocol to evaluate the effectiveness not only of the target device but also of the error mitigation algorithm. Digital zero-noise extrapolation is an error mitigation technique that estimates the noiseless expectation value using circuit folding to amplify errors by known scale factors and then extrapolating computed expectation values to the zero-noise limit. Here we demonstrate that zero-noise extrapolation, with global and local unitary folding with fractional scale factors, in conjunction with dynamical decoupling, can increase the effective quantum volume over the vendor-measured quantum volume. Specifically, we measure the effective quantum volume of four IBM Quantum superconducting processor units, obtaining values that are larger than the vendor-measured quantum volume on each device. This is the first such increase reported.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

NASA NTRS2013

Microwave Kinetic Inductance Detector with Selective Polarization Coupling

A conventional low-noise detector requires a technique to both absorb incident power and convert it to an electrical signal at cryogenic temperatures. This innovation combines low-noise detector and readout functionality into one device while maintaining high absorption, controlled polarization sensitivity, and broadband detection capability. The resulting far-infrared detectors can be read out with a simple approach, which is compact and minimizes thermal loading. The proposed microwave kinetic inductance detector (MKID) consists of three basic elements. The first is the absorptive section in which the incident power is coupled to a superconducting resonator at far-infrared frequency above its superconducting critical frequency (where superconductor becomes normal conductor). This absorber's shape effectively absorbs signals in the desired polarization state and is resonant at the radio frequency (RF) used for readout of the device. Control over the metal film used in the absorber allows realization of structures with either a 50% broadband or 100% resonance absorptance over a 30% fractional bandwidth. The second element is a microwave resonator - which is realized from the thin metal films used to make the absorber as transmission lines - whose resonance frequency changes due to a variation in its kinetic inductance. The resonator's kinetic inductance is a function of the power absorbed by the device. A low-loss dielectric (mono-crystalline silicon) is used in a parallel-plate transmission line structure to realize the desired superconducting resonators. There is negligible coupling among the adjacent elements used to define the polarization sensitivity of each detector. The final component of the device is a microwave transmission line, which is coupled to the resonator, and allows detection of changes in resonance frequency for each detector in the focal plane array. The spiral shape of the detector's absorber allows incident power with two polarizations to couple to the detector equally. A stepped impedance resonator was used that allows the incident power absorbed in the detecting membrane area to be uniformly distributed in the detector's transmission line at the RF readout frequency. This maximizes the sensitivity of the detector. The signal is read out via a frequency multiplexing technique that requires a minimum number of interface transmission lines for readout. This reduces the packaging complexity and coupling to the device's thermal environment.

Wollack, Edward↗

DOE OSTI2021

Thin-film synthesis of superconductor-on-insulator A15 vanadium silicide

Abstract We present a new method for thin-film synthesis of the superconducting A15 phase of vanadium silicide with critical temperature higher than 13 K. Interdiffusion between a metallic vanadium film and the underlying silicon device layer in a silicon-on-insulator substrate, at temperatures between 650 and 750 °C, favors formation of the vanadium-rich A15 phase by limiting the supply of available silicon for the reaction. Energy dispersive X-ray spectroscopy, X-ray photoelectron spectroscopy, and X-ray diffraction verify the stoichiometry and structure of the synthesized thin films. We measure superconducting critical currents of more than 10 6 amperes per square centimeter at low temperature in micron-scale bars fabricated from the material, and an upper critical magnetic field of 20 T, from which we deduce a superconducting coherence length of 4 nm, consistent with previously reported bulk values. The relatively high critical temperature of A15 vanadium silicide is an appealing property for use in silicon-compatible quantum devices and circuits.

36 MATERIALS SCIENCE↗

DOE OSTI2024

Cryogenic Platforms at Fermilab: Recent Results and Outlook

The Cosmic Quantum group at Fermilab operates three cryogenic facilities dedicated to the development and calibration of superconducting low-threshold detectors and qubits. One of which (LOUD) is located at the surface, while the other two (NEXUS and QUIET) are located 100 m underground enabling low-background device characterization and rare event searches. Recently, we have demonstrated world-leading resolution in the quasiparticle channel for kinetic inductance phonon-mediated detectors as well as the lowest rate of spatially- and temporally- correlated errors ( charge jumps ) in superconducting qubit chips. We have additionally made significant progress in expanding the suite of tools for simulating signal production and readout of these devices. In this talk, I will review these recent results, discuss some nascent projects focused on enhancing sensitivity of these detectors to sub-GeV dark matter, and highlight activities in these facilities over the next year.

Temples, Dylan J.↗

DOE OSTI2023

Electro-optic transduction in silicon via gigahertz-frequency nanomechanics

Interfacing electronics with optical fiber networks is key to the long-distance transfer of classical and quantum information. Piezo-optomechanical transducers enable such interfaces by using gigahertz-frequency acoustic vibrations as mediators for converting microwave photons to optical photons via the combination of optomechanical and piezoelectric interactions. However, despite successful demonstrations, efficient quantum transduction remains out of reach due to the challenges associated with hybrid material integration and increased loss from piezoelectric materials when operating in the quantum regime. Here, we demonstrate an alternative approach in which we actuate 5-GHz phonons in a conventional silicon-on-insulator platform. In our experiment, microwave photons resonantly drive a phononic crystal oscillator via the electrostatic force realized in a charge-biased narrow-gap capacitor. The mechanical vibrations are subsequently transferred via a phonon waveguide to an optomechanical cavity, where they transform into optical photons in the sideband of a pump laser field. Operating at room temperature and atmospheric pressure, we measure a microwave-to-optical photon conversion efficiency of 1.72±0.14×10 −7 in a 3.3 MHz bandwidth. Our results mark a stepping stone towards quantum transduction with integrated devices made from crystalline silicon, which promise efficient high-bandwidth operation and integration with superconducting qubits. Additionally, the lack of need for piezoelectricity or other intrinsic nonlinearities makes our approach applicable to a wide range of materials for potential applications beyond quantum technologies.

42 ENGINEERING↗

NASA NTRS1977

Potential damage to DC superconducting magnets due to the high frequency electromagnetic waves

Experimental data are presented in support of the hypothesis that a dc superconducting magnet coil does not behave strictly as an inductor, but as a complicated electrodynamic device capable of supporting electromagnetic waves. Travel times of nanosecond pulses and evidence of sinusoidal standing waves were observed on a prototype four-layer solenoidal coil at room temperature. Ringing observed during switching transients appears as a sequence of multiple reflected square pulses whose durations are related to the layer lengths. With sinusoidal excitation of the coil, the voltage amplitude between a pair of points on the coil exhibits maxima at those frequencies such that the distance between these points is an odd multiple of half wavelength in free space. Evidence indicates that any disturbance, such as that resulting from switching or sudden fault, initiates multiple reflections between layers, thus raising the possibility for sufficiently high voltages to cause breakdown.

Gabriel, G. J.↗

NASA NTRS1992

Atomic layer epitaxy of YBaCuO for optoelectronic applications

An MOCVD-based atomic-layer epitaxy process is being developed as a potential solution to the problems of film-thickness and interface-abruptness control which are encountered when fabricating superconductor-insulator-superconductor devices using YBa2Cu3O(7-x). In initial studies, the atomic-layer MOCVD process yields superconducting YBa2Cu3O(7-x) films with substrate temperatures of 605 C during film growth, and no postdeposition anneal. The low temperature process yields a smooth film surface and can reduce interface degradation due to diffusion.

Skogman, R. A.↗

NASA NTRS1999

Noise and Bandwidth Measurements of Diffusion-Cooled Nb Hot-Electron Bolometer Mixers at Frequencies Above the Superconductive Energy Gap

Diffusion-cooled Nb hot-electron bolometer (HEB) mixers have the potential to simultaneously achieve high intermediate frequency (IF) bandwidths and low mixer noise temperatures for operation at THz frequencies (above the superconductive gap energy). We have measured the IF signal bandwidth at 630 GHz of Nb devices with lengths L = 0.3, 0.2, and 0.1 micrometer in a quasioptical mixer configuration employing twin-slot antennas. The 3-dB EF bandwidth increased from 1.2 GHz for the 0.3 gm long device to 9.2 GHz for the 0.1 gm long device. These results demonstrate the expected 1/L squared dependence of the IF bandwidth at submillimeter wave frequencies for the first time, as well as the largest EF bandwidth obtained to date. For the 0.1 gm device, which had the largest bandwidth, the double sideband (DSB) noise temperature of the receiver was 320-470 K at 630 GHz with an absorbed LO power of 35 nW, estimated using the isothermal method. A version of this mixer with the antenna length scaled for operation at 2.5 THz has also been tested. A DSB receiver noise temperature of 1800 plus or minus 100 K was achieved, which is about 1,000 K lower than our previously reported results. These results demonstrate that large EF bandwidth and low-noise operation of a diffusion-cooled HEB mixer is possible at THz frequencies with the same device geometry.

Wyss, R. A.↗

DOE OSTI2025

Quantum optimal control of superconducting qubits based on machine-learning characterization

Implementing fast and high-fidelity quantum operations using open-loop quantum optimal control relies on having an accurate model of the quantum dynamics. Any deviations between this model and the complete dynamics of the device, such as the presence of spurious modes or pulse distortions, can degrade the performance of optimal controls in practice. Here, we propose an experimentally simple approach to realize optimal quantum controls tailored to the device parameters and environment while specifically characterizing this quantum system. Concretely, we use physics-inspired machine learning to infer an accurate model of the dynamics from experimentally available data and then optimize our experimental controls on this trained model. We show the power and feasibility of this approach by optimizing arbitrary single-qubit operations in detailed numerical simulations of a superconducting transmon qubit. Furthermore, we demonstrate that this framework produces an accurate description of the device dynamics under arbitrary controls, together with the precise pulses achieving arbitrary single-qubit gates with a high fidelity of ∼99.99%.

Artificial neural networks↗

DOE OSTI2024

Superionic fluoride gate dielectrics with low diffusion barrier for two-dimensional electronics

Exploration of new dielectrics with a large capacitive coupling is an essential topic in modern electronics when conventional dielectrics suffer from the leakage issue near the breakdown limit. Here, to address this looming challenge, we demonstrate that rare-earth metal fluorides with extremely low ion migration barriers can generally exhibit an excellent capacitive coupling over 20 μF cm -2 (with an equivalent oxide thickness of ~0.15 nm and a large effective dielectric constant near 30) and great compatibility with scalable device manufacturing processes. Such a static dielectric capability of superionic fluorides is exemplified by MoS 2 transistors exhibiting high on/off current ratios over 10 8 , ultralow subthreshold swing of 65 mV dec -1 and ultralow leakage current density of ~10 -6 A cm -2 . Therefore, the fluoride-gated logic inverters can achieve notably higher static voltage gain values (surpassing ~167) compared with a conventional dielectric. Furthermore, the application of fluoride gating enables the demonstration of NAND, NOR, AND and OR logic circuits with low static energy consumption. In particular, the superconductor–insulator transition at the clean-limit Bi 2 Sr 2 CaCu 2 O 8+δ can also be realized through fluoride gating. In conclusion, our findings highlight fluoride dielectrics as a pioneering platform for advanced electronic applications and for tailoring emergent electronic states in condensed matter.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2023

Controlled Dielectric Breakdown to Form Pinhole Passivating Contacts

This contribution explores an alternate route to forming pinhole-based poly-Si/dielectric/c-Si passivating contacts. The method utilizes controlled dielectric breakdown or electroforming to produce nanoscale pinholes in a thick (non-tunnelling) dielectric which, when annealed, allows dopant atoms to pass from doped poly-Si through the pinholes and into the c-Si wafer, forming conductive pathways. We show that the pinholes lose passivation after electroforming but can be repassivated with a forming gas anneal. N-type contacts show contact resistivities of ~20 mOhm-cm2, but p-type contacts are ~100 mOhm-cm2. Devices show a distinct kink in the J-V curve indicative of a barrier to transport. The method can be expanded to optimized dielectric passivation stacks (not just thin, single layers) and can be formed in parallel over the faces of the wafer in selected areas (pinholes only under the grid lines).

CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SU↗

NASA NTRS1994

Measurement and characterization of force dynamics in high T(sub c) superconductors

Magnetic bearing implementations using more exotic superconducting phenomena have been proliferating in recent years because they have important advantages over conventional implementations. For example, the stable suspension of a six degrees-of-freedom object by superconducting means can be achieved without a control system and with the use of only a single superconductor. It follows that the construction becomes much simpler with decreased need for position sensors and stabilizers. However, it is recognized that the design of superconducting systems can be difficult because important characteristics relating to the 6 degree-of-freedom dynamics of an object suspended magnetically are not readily available and the underlying principles of superconducting phenomena are not yet completely understood. To eliminate some of the guesswork in the design process, this paper proposes a system which can resolve the mechanical properties of suspension by superconductivity and provide position and orientation dependent data about the system's damping, stiffness, and frequency response characteristics. This system employs an actively-controlled magnetically-suspended fine-motion device that can also be used as a six degree-of-freedom force sensor. By attaching the force sensor to a permanent magnet that is being levitated above a superconducting magnet, mechanical characteristics of the superconductor levitation can be extracted. Such information would prove useful for checking the validity of theoretical models and may even give insights into superconducting phenomena.

Higuchi, Toshiro↗

DOE OSTI2021

Nanoscale functionalized superconducting transport channels as photon detectors

Herein, single-photon detectors have typically consisted of macroscopic materials where both the photon absorption and transduction to an electrical signal happen. Newly proposed designs suggest that large arrays of nanoscale detectors could provide improved performance in addition to decoupling the absorption and transduction processes. Here we study the properties of such a detector consisting of a nanoscale superconducting (SC) transport channel functionalized by a photon absorber. We explore two detection mechanisms based on photoinduced electrostatic gating and magnetic effects. To this end we model the narrow channel as a one-dimensional atomic chain and use a self-consistent Keldysh-Nambu Green's function formalism to describe nonequilibrium effects and SC phenomena. We consider cases where the photon creates electrostatic and magnetic changes in the absorber, as well as devices with strong and weak coupling to the metal leads. Our results indicate that the most promising case is when the SC channel is weakly coupled to the leads and in the presence of a background magnetic field, where photoexcitation of a magnetic molecule can trigger a SC-to-normal transition in the channel that leads to a change in the device current several times larger than in the case of a normal-phase channel device.

1-dimensional systems↗

DOE OSTI2025

Zero-bias conductance peaks at zero applied magnetic field due to stray fields from integrated micromagnets in hybrid nanowire quantum dots

Many recipes for realizing topological superconductivity rely on broken time-reversal symmetry, which is often attained by applying a substantial external magnetic field. Alternatively, using magnetic materials can offer advantages through low-field operation and design flexibility on the nanoscale. Mechanisms for lifting spin degeneracy include exchange coupling, spin-dependent scattering, spin injection – all requiring direct contact between the bulk or induced superconductor and a magnetic material. Here, we implement locally broken time-reversal symmetry through dipolar coupling from nearby micromagnets to superconductor-semiconductor hybrid nanowire devices. Josephson supercurrent is hysteretic due to micromagnets switching. At or around zero external magnetic field, we observe an extended presence of Andreev bound states near zero voltage bias. We also show a zero-bias peak plateau of a non-quantized value. Our findings largely reproduce earlier results where similar effects were presented in the context of topological superconductivity in a homogeneous wire, and attributed to more exotic time-reversal breaking mechanisms [Nat. Phys. 17, 43 (2020)]. In contrast, our stray field profiles are not designed to create Majorana modes, and our data are compatible with a straightforward interpretation in terms of trivial states in quantum dots. At the same time, the use of micromagnets in hybrid superconductor-semiconductor devices shows promise for future experiments on topological superconductivity.

Jiang, Luyao [Univ. of Pittsburgh, PA (United Stat↗

NASA NTRS2005

SCB Quantum Computers Using iSWAP and 1-Qubit Rotations

Units of superconducting circuitry that exploit the concept of the single- Cooper-pair box (SCB) have been built and are undergoing testing as prototypes of logic gates that could, in principle, constitute building blocks of clocked quantum computers. These units utilize quantized charge states as the quantum information-bearing degrees of freedom. An SCB is an artificial two-level quantum system that comprises a nanoscale superconducting electrode connected to a reservoir of Cooper-pair charges via a Josephson junction. The logical quantum states of the device, .0. and .1., are implemented physically as a pair of charge-number states that differ by 2e (where e is the charge of an electron). Typically, some 109 Cooper pairs are involved. Transitions between the logical states are accomplished by tunneling of Cooper pairs through the Josephson junction. Although the two-level system contains a macroscopic number of charges, in the superconducting regime, they behave collectively, as a Bose-Einstein condensate, making possible a coherent superposition of the two logical states. This possibility makes the SCB a candidate for the physical implementation of a qubit. A set of quantum logic operations and the gates that implement them is characterized as universal if, in principle, one can form combinations of the operations in the set to implement any desired quantum computation. To be able to design a practical quantum computer, one must first specify how to decompose any valid quantum computation into a sequence of elementary 1- and 2-qubit quantum gates that are universal and that can be realized in hardware that is feasible to fabricate. Traditionally, the set of universal gates has been taken to be the set of all 1-qubit quantum gates in conjunction with the controlled-NOT (CNOT) gate, which is a 2-qubit gate. Also, it has been known for some time that the SWAP gate, which implements square root of the simple 2-qubit exchange interaction, is as computationally universal as is the CNOT operation.

Williams, Colin↗

NASA NTRS2014

Properties of Superconducting Mo, Mo2n and Trilayer Mo2n-Mo-Mo2n Thin Films

We present measurements of the properties of thin film superconducting Mo, Mo2N and Mo2N/Mo/Mo2N trilayers of interest for microwave kinetic inductance detector (MKID) applications. Using microwave resonator devices, we investigate the transition temperature, energy gaps, kinetic inductance, and internal quality factors of these materials. We present an Usadel-based interpretation of the trilayer transition temperature as a function of trilayer thicknesses, and a 2-gap interpretation to understand the change in kinetic inductance and internal resonance quality factor (Q) as a function of temperature.

Superconducting↗

DOE OSTI2022

Scaling Superconducting Quantum Computers with Chiplet Architectures

Fixed-frequency transmon quantum computers (QCs) have advanced in coherence times, addressability, and gate fidelities. Unfortunately, these devices are restricted by the number of on-chip qubits, capping processing power and slowing progress toward fault-tolerance. Although emerging transmon devices feature over 100 qubits, building QCs large enough for meaningful demonstrations of quantum advantage requires overcoming many design challenges. For example, today’s transmon qubits suffer from significant variation due to limited precision in fabrication. As a result, barring significant improvements in current fabrication techniques, scaling QCs by building ever larger individual chips with more qubits is hampered by device variation. Severe device variation that degrades QC performance is referred to as a defect. Here, we focus on a specific defect known as a frequency collision. When transmon frequencies collide, their difference falls within a range that limits two-qubit gate fidelity. Frequency collisions occur with greater probability on larger QCs, causing collision-free yields to decline as the number of on-chip qubits increases. As a solution, we propose exploiting the higher yields associated with smaller QCs by integrating quantum chiplets within quantum multi-chip modules (MCMs). Yield, gate performance, and application-based analysis show the feasibility of QC scaling through modularity. Our results demonstrate that chiplet architectures, relative to monolithic designs, benefit from average yield improvements ranging from 9.6 – 92.6 × for ≲5 qubit machines. In addition, our simulations explore the design space of chiplet systems and discover configurations that demonstrate average two-qubit gate infidelity reductions that are at best 0.815 × their monolithic counterpart. Lastly, we observe that carefully-selected modular systems achieve fidelity improvements on a range of benchmark circuits.

quantum architecture↗

DOE OSTI2022

Methods for microwave characterization of electro-optic crystals for quantum transduction

Microwave-optic quantum transducers are essential devices to develop distributed quantum networks and implement related quantum communication protocols. Three dimensional high-coherence time microwave cavities embedded with electro-optic nonlinear dielectric materials provide promising platforms to boost the efficiency of the microwave-optic frequency conversion. However, so far, the properties for such dielectric crystals operating at milli-Kelvin cryogenic temperatures have not been well understood. Here, we propose a scheme to precisely measure and benchmark the dielectric constant and analyze the dissipation mechanisms of electro-optic materials, such as Lithium Niobate, at the quantum threshold. We will use Fermilab’s three dimensional superconducting cavities with long coherence time. The proposed method of microwave characterization lays the foundations for engineering quantum transduction devices and quantum sensors with high conversion efficiency and fidelity.

Zorzetti, Silvia↗