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Silicon Partitioning Between Iron-Rich Metal and Silicate Melt: New Constraints From Aerodynamic Laser Levitation Furnace Experiments

The partitioning of light elements (e.g., Si, C, H, etc.) between silicate melts and iron metal alloys as a function of pressure and temperature is a critical constraint in defining the compositional evolution of planetary interiors. While there are a significant number of experimental studies in the literature that examine the various influences of oxygen fugacity, temperature, pressure, and composition on the metal-melt partitioning of silicon, it is difficult to disentangle the effects of each variable due to the nominally independent parameters (e.g., pressure, temperature, composition) being collinear. To better test for the independent effects of pressure, temperature, and melt composition on the partitioning of silicon between iron alloy and silicate melt, new high temperature (1800°–2500°C), rapid quench (~700°C/s) aerodynamic levitation laser-heating experiments in the Fe-Si-Mg-O (En65-Fa5-Si3-Fe27) system were conducted. This high temperature, low pressure method is ideal for these experiments because it eliminates the metal container as a sink for elements of interest to partition into, and it has a rapid quench rate that minimizes potential exsolution of silicon from the metal phase during quench cooling. Given the short run times of the levitation experiments (30–60 seconds), a time series at a lower temperature (1700°C) in a vertical gas-mixing muffle tube furnace was also conducted to assess equilibrium times of the bulk composition. All successful runs were imaged using back-scatter electron imaging and analyzed for phase composition using a JEOL 8530F field emission microprobe. These new data were added to a comprehensive and internally consistent data set created from published experiments, and subsequently modeled using parameters designed to minimize collinearity (e.g., optical basicity is used as a proxy for melt composition). High collinearity is found in the data set however between temperature and oxygen fugacity, precluding any model that contains both as nominally independent variables. The resulting model demonstrates a statistically significant effect of pressure, temperature, and melt composition on the partitioning of silicon in Fe-rich metal, which has implications for the formation of planetary cores in rocky planets and provides important constraints on potential bulk core compositions.

Metal↗
DOE OSTI2022

A New Search for Low-mass Dark Matter and an Examination and Reduction of the Uncertainty due to the Photoelectric Absorption Cross Section using a Cryogenic Silicon Detector with Single-charge Sensitivity

Many astrophysical observations point to the abundant existence of dark matter (DM) in the universe composed of particles beyond the Standard Model. However despite numerous experiments using different techniques, DM particles have yet to be directly observed. The Super Cryogenic Dark Matter Search (SuperCDMS) SNOLAB experiment will employ silicon and germanium crystal detectors operated at temperatures as low as 15~mK to probe DM interactions using phonon and ionization signals. Recently, R\&D; facilities have developed gram-sized high-voltage eV-scale (HVeV) silicon detectors that achieve single-electron-hole-pair resolution. By probing effective DM-electron interactions, these devices can be used for searches of low-mass DM candidates.This dissertation presents a DM search experiment known as HVeV Run~2 that employs a second-generation HVeV detector operated in an above-ground laboratory at Northwestern University (IL, USA). Energy spectra are obtained from a blind analysis with 0.39 and 1.2\,g-days of exposure with the detector biased at 60 and 100\,V, respectively. The 0.93~gram detector achieves a 3\,eV phonon energy resolution, corresponding to a world-leading charge resolution of 3\,\% of a single electron-hole pair for a detector bias of 100\,V. With charge carrier trapping and impact ionization effects incorporated into the DM signal models, the resulting exclusion limits are reported for inelastic DM-electron scattering for DM masses from 0.5--$10^{4}$\,MeV$/c^{2}$; in the mass range from 1.2--50\,eV$/c^{2}$ the limits for dark photon and axion-like particle absorption are reported.Several DM search experiments, including HVeV Run~2, are sensitive to low-mass DM candidates that rely on the temperature-dependent photoelectric absorption cross section of silicon. However discrepancies in the underlying literature data result in dominating systematic uncertainties on the DM exclusion limits. In order to reduce these systematic uncertainties, this dissertation presents a novel method of making a direct, low-temperature measurement of the photoelectric absorption cross section of silicon at energies near the band gap (1.2--2.8\,eV).

Wilson, Matthew James↗
DOE OSTI2022

Silicone modified lubricant

A silicone modified lubricant includes a Group I, II, III, IV or V base oil in combination with a minor amount of a silicone oil. Further, the lubricant includes a dispersant such as a dispersant olefin copolymer which maintains the silicone oil dispersed in the base oil. The silicone oil reduces the surface tension of the lubricant thereby reducing power loss. Preferably the lubricant formation has a surface tension less than 28 mN/m, making it particularly suitable for dip lubrication systems.

Kolekar, Anant S.↗
DOE OSTI2022

Solvents and slurries comprising a poly(carboxylic acid) binder for silicon electrode manufacture

A binder solution for manufacturing silicon-based anodes useful for lithium-ion electrochemical cells is described herein. The binder solution comprises a poly(carboxylic acid) binder dissolved in a mixed solvent system comprising an amide solvent of Formula I, as described herein, and a second solvent which can be water and/or an organic solvent. The binder preferably comprises poly(acrylic acid). The mixed solvent system comprises about 10 to about 99 vol % of the amide solvent of Formula I. The binder solution is utilized as a solvent for a slurry of silicon-containing particles for preparing a silicon-containing electrode. The slurries made with the mixed solvent systems have higher viscosity and are more stable than slurries containing the same concentrations of silicon particle, carbon particles, and binder in water as the sole solvent.

Zhang, Lu↗
DOE OSTI2022

Performance Before and After Irradiation of Pixelated 3D Silicon Sensors for the HL-LHC CMS Tracker

The Large Hadron Collider (LHC) particle accelerator at European Center for Nuclear Research (CERN) will be shut down starting in 2026 to achieve the High Luminosity Large Hadron Collider (HL-LHC) upgrade. The upgrade will allow for higher fluences, in order to increase the probability of detecting increasingly rare particles, and to obtain higher precision measurements of known particles. To accommodate the new accelerator conditions, many aspects of the Compact Muon Solenoid (CMS) detector will be upgraded; of particular interest for this thesis are the silicon pixel detectors located in the inner tracker. These will be replaced and upgraded to accommodate the higher fluences of the HL-LHC upgrade, as well as to replace existing sensors which have sustained radiation damage. In order for the new sensors to operate under high luminosity conditions, they must be increasingly radiation hard, and in order to detect rare particles, they must be increasingly more precise. The performance of one Centro Nacional de Microelectronica (CNM) 3D silicon sensor before and after undergoing irradiation at fluences similar to those which will be observed at the HL-LHC was investigated to determine radiation hardness and precision. Data was collected at Fermi National Laboratory (Fermilab), in the Fermi National Laboratory Test Beam Facility (FTBF) silicon tracker telescope, which can be used to determine the number of particles, and tracks made by high energy protons passing through. The sensor was also irradiated at Fermilab in the Irradiation Test Area (ITA). Prior to data collection a tuning procedure is carried out to determine ideal bias voltage operating conditions, mask noisy and dead pixels, adjust to the ideal threshold, and map sensor gain. Data is then collected at the FTBF, where the sensor is installed in the center of the FTBF silicon telescope. Variables, including angle and bias voltage, are varied throughout data collection. Data is then processed using an alignment software to determine the exact telescope geometry, along with the tracks which were observed passing through the sensor and telescope. Sensor performance was found to be comparable before and after irradiation, with irradiated results showing slightly lower efficiencies and cluster sizes. Position resolution is comparable both before and after irradiation, and similar distributions of cluster shape are observed. After irradiation, the sensor shows increasing collected charge with bias, an indication of increased width of the depletion region. Peak charge pre-irradiation is higher than post-irradiation peak charge, indicating the irradiated results are not taken under fully-depleted conditions.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2023

Surface-functionalized silicon anode for high energy lithium ion batteries

A composition includes a silicon nanoparticle having surface-attached groups, and the silicon nanoparticle is represented by the formula: [Si]-[linker]-[terminal group]. In the formula [Si] represents the surface of the silicon nanoparticle; [terminal group] is a moiety that is configured for further reaction or is compatible with the electrolyte; and [linker] is a group linking the surface of the silicon nanoparticle to the [terminal group].

Zhang, Zhengcheng↗
DOE OSTI2023

Three-dimensional printed porous silicone matrix using leachable porogen

The silicone-based ink for additive manufacturing includes a siloxane macromer, and a porogen mixture comprising a water-soluble porogen and a surfactant. The product of additive manufacturing with a silicone-based ink includes a three-dimensional printed structure including a plurality of continuous filaments arranged in a predefined pattern and a plurality of inter-filament pores defined by the predefined pattern of the continuous filaments. In addition, each continuous filament of the three-dimensional printed structure includes a silicone matrix having an open cell structure with a plurality of intra-filament pores, and the intra-filament pores form continuous channels through the silicone matrix.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Evaluating Materials Design Parameters of Hole-Selective Contacts for Silicon Heterojunction Solar Cells

Silicon heterojunction (SHJ) solar cell efficiencies are limited by parasitic absorption from the hydrogenated amorphous silicon (a-Si:H) front contact, but this may be mitigated by selecting an alternative carrier selective contact material with a wider band gap. When choosing such a material as the hole-selective contact (“p-layer”), the alignment of the material's valence band edge energy (E VB ) with that of crystalline silicon (c-Si) is an important criterion, but several other material parameters can also influence the band bending at the contact interface. Here, we simulate an (n)c-Si/(i)a-Si:H/p-layer interface to explore the influence of six materials parameters in a variable p-layer on the SHJ performance. We find a strong influence on the fill factor (FF) from thickness, doping, and E VB , and on V OC from the interfacial defect density; notably, optimal E VB is ~ 0.1 eV higher than the valence band edge energy of a-Si:H. Multiparameter sensitivity analyses demonstrate how performance is simultaneously influenced by E VB and doping; thus, both parameters should be optimized alongside one another. To assess the influence of these parameters experimentally, we grow p-type NiO x as a test-case p-layer, which shows that FFs decrease with the oxygen content likely from the increased misalignment of E VB . Although modest efficiencies are achieved experimentally (>7%), what is important is that our model simulates performance trends. With these results, we apply a materials discovery pipeline to suggest new materials (e.g., ZnTe and BeTe) to try as p-layers in the SHJ. This combination of simulations, experiments, and materials discovery informs a better understanding of contact selection in SHJ cells.

14 SOLAR ENERGY↗
DOE OSTI2020

Trace-Level, Multi-Gas Detection for Food Quality Assessment Based on Decorated Silicon Transistor Arrays

Multiplexed gas detection at room temperature is critical for practical applications, such as for tracking the complex chemical environments associated with food decomposition and spoilage. Here, an integrated array of multiple silicon-based, chemical-sensitive field effect transistors (CSFETs) is presented to realize selective, sensitive, and simultaneous measurement of gases typically associated with food spoilage. CSFETs decorated with sensing materials based on ruthenium, silver, and silicon oxide are used to obtain stable room-temperature responses to ammonia (NH 3 ), hydrogen sulfide (H 2 S), and humidity, respectively. For example, one multi-CSFET sensor signal changes from its baseline by 13.34 in response to 1 ppm of NH 3 , 724.45 under 1 ppm H 2 S, and 23.46 under 80% relative humidity, with sensitive detection down to 10 ppb of NH 3 and H 2 S. To demonstrate this sensor for practical applications, the CSFET sensor array is combined with a custom-printed circuit board into a compact, fully integrated, and portable system to conduct real-time monitoring of gases generated by decomposing food. By using existing silicon-based manufacturing methodologies, this room-temperature gas sensing array can be fabricated reproducibly and at low cost, making it an attractive platform for ambient gas measurement needed in food safety applications.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Role of Low Molecular Weight Polymers on the Dynamics of Silicon Anodes During Casting

This work probes the slurry architecture of a high silicon content electrode slurry with and without low molecular weight polymeric dispersants as a function of shear rate to mimic electrode casting conditions for poly(acrylic acid) (PAA) and lithium neutralized poly(acrylic acid) (LiPAA) based electrodes. Rheology coupled ultra-small angle neutron scattering (rheo-USANS) was used to examine the aggregation and agglomeration behavior of each slurry as well as the overall shape of the aggregates. The addition of dispersant has opposing effects on slurries made with PAA or LiPAA binder. With a dispersant, there are fewer aggregates and agglomerates in the PAA based silicon slurries, while LiPAA based silicon slurries become orders of magnitude more aggregated and agglomerated at all shear rates. The reorganization of the PAA and LiPAA binder in the presence of dispersant leads to a more homogeneous slurry and a more heterogeneous slurry, respectively. This reorganization ripples through to the cast electrode architecture and is reflected in the electrochemical cycling of these electrodes.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2025

Low-Cost, Screen-Printed Silver Metal Complex Inks for Silicon Heterojunction Solar Cells

Screen printing using metal particle pastes, the current photovoltaic industry metallization standard, provides fast and reliable metal grids for silicon solar cells. Recently, metal complex or reactive metal inks are attracting research interest due to their significantly low cost and higher performance compared to traditional nanoparticle silver pastes. In this work, we demonstrate, for the first time, screen-printed high-efficiency silicon heterojunction solar cells metallized by silver metal complex inks on industrial G1-size (158.75 x 158.75 mm2) wafers. We demonstrate screen-printed Ag metal complex ink grid patterns with continuous fingers ~100-120 ..mu..m wide. The printed Ag grid is very thin (~1 ..mu..m), which is an order of magnitude thinner than the current ~20-30 ..mu..m fingers printed with low-temperature nanoparticle-based pastes. Double printing allows silicon heterojunction devices with efficiencies >20%. This is the highest efficiency so far, to our knowledge, of industrial solar cell precursors using this metallization technology. Simulation results suggested that increasing the thickness of the metal film does not significantly improve efficiency due to the dense, highly conductive films. So, a single print of ~1 ..mu..m finger would be enough to produce cells that perform similarly to a ~20 ..mu..m thick nanoparticle paste printed cells. Additionally, solar cells printed on G1 wafers with silver metal complex ink required more than 10 times less silver (~0.03 g) compared to those using silver/copper nanoparticle paste (~0.4 g of Ag). These results indicate that metal complex inks are a very promising replacement for silver nanoparticle pastes for industrial-scale metallization in an age of resource scarcity and high costs of noble metals.

14 SOLAR ENERGY↗
DOE OSTI2023

Nonthermal plasma synthesis of silicon carbonitride

Abstract The use of a low‐temperature plasma for the synthesis of amorphous silicon carbonitride (SiCN) nanoparticles enables the realization of sintered bulk samples with high thermal stability. Amorphous SiCN nanoparticles are produced from a mixture of silane, methane, and ammonia utilizing a mid‐pressure, radio‐frequency, continuous flow reactor. Particle characterization shows that the nanoparticles are largely amorphous with some crystalline silicon and silicon carbide domains <10 nm in size. Compositional tuning, controlled by varying the precursor flow rates, coupled with the uniform mixing of elements at the nanoscale, results in samples that resist crystallization even when sintered at temperatures as high as 2000°C. This study suggests that the low‐temperature plasma synthesis of nanoparticles has great potential to produce bulk structural materials for application in harsh environments.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2023

Dislocation‐Induced Structural and Luminescence Degradation in InAs Quantum Dot Emitters on Silicon

This study probes the extent to which dislocations reduce carrier lifetimes and alter growth morphology and luminescence in InAs quantum dots (QD) grown on silicon. These heterostructures are key ingredients to achieving a highly reliable monolithically integrated light source on silicon necessary for photonic-integrated circuits. Around 20%–30% shorter carrier lifetimes are found at spatially resolved individual dislocations at room temperature using time-resolved cathodoluminescence spectroscopy, highlighting the strong nonradiative impact of dislocations even against the three-dimensional confinement of QDs. Beyond these direct effects of increased nonradiative recombination, it is found that misfit dislocations in the defect filter layers employed during III–V/Si growth alter the QD growth environment to induce a crosshatch-like variation in QD emission color and intensity when the filter layer is positioned sufficiently close to the QD emitter layer. Sessile threading dislocations generate even more egregious hillock defects that also reduce emission intensities by altering layer thicknesses, as measured by transmission electron microscopy and atom probe tomography. This work presents a more complete picture of the impacts of dislocations relevant to the development of light sources for scalable silicon photonic integrated circuits.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Degradation of Edge-Defined Film-Fed Silicon Glass–Glass Modules on Florida Rooftop After 22 Years

Thin silicon (< 100 μm) adoption can provide significantly lower cost. Kerfless technologies provide thin wafers while preventing material from being wasted. Understanding how this family of processing influences module reliability is important. A set of four edge-defined film-fed growth (EFG) silicon modules from a ten-module system in Florida is measured after 22 years of exposure. Power loss rates of 0.58–0.78% year -1 are measured for three modules, while a rate of 1.32% is measured for a module with severe delamination and corrosion. Short-circuit current degrades between 10.7% and 13.1% for all modules. Further, the losses are primarily optical and recombination based; however, series and shunt resistance effects play a non-negligible role. Pre-existing recombination losses exist but are exacerbated via degradation. Optical losses in short-circuit current are due in part to encapsulant yellowing. Electroluminescence (EL) images display the effects of processing on bulk quality by clearly showing lines of alternating brightness along the wafer length. To the authors’ knowledge, this is the first article displaying suns–V OC data, effective lifetime versus excess carrier density data, and module EL images for EFG silicon-based modules.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Influence of the Bulk Resistivity on Silicon Heterojunction Solar Cells and Module Reliability

Recent developments in industry on surface passivation open the possibility of using less doped substrates in silicon solar cells. In this report we investigate how the bulk resistivity affects the performance of silicon cells and the reliability of modules. Herein, n- and p-type silicon heterojunction cells with bulk resistivities between 3 and 15 000 Ωcm are studied. We measure the current–voltage characteristics of n-type cells across the resistivity range, and we find comparable responses to illumination intensities between 0.1 and 1 suns. The cells with bulk resistivities over 1000 Ωcm show breakdown voltages larger than -1000 V, almost two orders of magnitude higher than in typical commercial cells. Although modules have bypass-diodes to prevent cells from going into breakdown, higher breakdown voltages can improve the reliability of modules in case of bypass-diode failure and reduce the module cost by easing the number of bypass-diodes required. Finally, the cells have been submitted to light soaking. The float-zone p-type cells with bulk resistivities over 10 000 Ωcm are less sensitive to light-induced degradation than cells with bulk resistivities below 10 Ωcm. The former show to recover few hours after light soaking, while the latter recover only after dark annealing.

14 SOLAR ENERGY↗
DOE OSTI2022

Tuning working potential of silicon-phosphorus anode via microstructure control for high-energy lithium-ion batteries

The primary research on anode materials of lithium-ion batteries have been focused on increasing the specific capacity, while the working potential that is also closely related to the practical energy density of batteries has been paid much less attention. In this paper, starting from micrometer-sized silicon and black phosphorus, we have reported a high-energy silicon-phosphorus/carbon anode (denoted as mSPC) via a high-energy ball milling process, which demonstrates an average discharge working potential of 0.3 volts versus lithium, together with a high reversible capacity of > 2000 mAh/g, high initial coulombic efficiency of 84%, excellent cycle stability, and superior rate capability up to 15 A/g. Furthermore, in situ focused-ion-beam scanning electron microscopy reveals that the volume change of the mSPC anode during repeated (de) lithiation is effectively alleviated. In contrast, starting from nanometer-sized silicon, the resulted anode (denoted as nSPC) not only presents a lower reversible capacity (~1200 mAh/g), but also exhibits a higher charge/discharge working potential, leading to reduced energy density. Our results indicate the importance of composition/structure control in tailoring the working potential and specific capacity of alloying-type anodes towards high-energy lithium-ion batteries.

25 ENERGY STORAGE↗
DOE OSTI2022

Design Considerations for Controlling Silicon Nanoparticle Nucleation and Growth in a Nonthermal Plasma

Controlling the nucleation and growth of nanoparticles in low temperature plasma systems is imperative for controlling nanoparticle size distributions; and for some applications such as deposition and etching in microelectronic processing, preventing particle contamination. In this work, silicon nanoparticle (NP) production from silane is used as a model system to investigate the nucleation process. Although the mechanisms responsible for silicon NP nucleation and growth have been studied, it is unclear how controllable system parameters (e.g., pressure, system geometry, and gas composition) can be used to inhibit or promote NP formation. For example, the transport of reactive silane species is expected to significantly affect the feed fraction of silane required to nucleate silicon NP (the nucleation onset fraction) due to losses at the reactor walls. In this work, NP mass density was determined as a function of system pressure, gas composition, and reactor diameter for a tubular flow-through radiofrequency (RF) plasma using Ar/H2/He/SiH4 gas mixtures. A quartz crystal microbalance (QCM) impactor was developed to measure the total aerosol mass density downstream of the plasma and thereby identify the nucleation onset and its dependence on process parameters. Finally, a reaction mechanism was developed and incorporated into a global plasma chemistry model to better understand the nucleation onset and NP growth.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Mitigation of rapid capacity decay in silicon-LiNi 0.6 Mn 0.2 Co 0.2 O 2 full batteries

Silicon (Si)-based materials have been considered as the most promising anode materials for high-energy-density lithium-ion batteries because of their higher storage capacity and similar operating voltage, as compared to the commercial graphite (Gr) anode. But the use of Si anodes including silicon-graphite (Si-Gr) blended anodes often leads to rapid capacity decay in Si-Gr/LiNixMnyCo z O 2 (x+y+z=1) full cells, which has been attributed to surface instability of the Si component. In addition to stabilizing the surface, this work investigates the potential of the Si-Gr blended anodes in a full-cell configuration and its impact on the capacity contribution from active components. Using dQ/dV plots of the full cells, a powerful but simple-to-implement differential potential approach is developed to decouple the capacity contribution and degradation from the graphite and silicon components. Data collected from three-electrode cells confirm the results from the differential potential approach, which suggests a voltage slippage to a higher voltage at the blended anode side. Additionally, the voltage slippage causes a reduced utilization of the Gr component and exacerbates side reactions between the Si-Gr anode and carbonate electrolytes. Furthermore, based on these failure mechanisms, we adopted a mitigation strategy to tune the open circuit voltage of the prelithiated anode while stabilizing the surface. As a result, the full cells with the modified Si-Gr anodes (mass loading, 2.5 mAh/cm 2 ) offer a highly reversible full-cell energy density of 390 Wh/kg (based on the mass of both anode and cathode materials in a full cell) with a cycling CE of 99.9% over 200 cycles.

25 ENERGY STORAGE↗