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At least 757 records · Page 42

Robust Polymer Electrolytes For Flexible Energy Storage (CRADA Final Report)

As part of the Cyclotron Road program, Anthro Energy investigated the formulation, synthesis, and application of advanced supramolecular compounds for lithium-ion batteries. Anthro Energy developed and tested formulations and chemistries to create polymeric materials with improved mechanical strength, safety, and electrochemical performance. These materials were explored for use in next-generation batteries with a variety of form factors. Initially, Anthro Energy tested these materials to create flexible and deformable batteries, which are in high demand for the wearable/flexible electronics industry. In future work, Anthro Energy’s materials may be applied to create rigid structural batteries, or to enable novel chemistries such as silicon anodes or lithium metal anodes. In the process of testing the company’s unique lithium-ion cells, Anthro Energy explored the development and utilization of novel cell components, cell architectures, and testing protocols. These next-generation flexible and structural batteries may eventually enable new categories of electronic devices.

25 ENERGY STORAGE↗

SYSTEMATIC STUDIES OF SHOCK REVIVAL AND THE SUBSEQUENT EVOLUTIONS IN CORE-COLLAPSE SUPERNOVAE WITH PARAMETRIC PROGENITOR MODELS

We conducted one-dimensional and two-dimensional hydrodynamic simulations of post-shock revival evolutions in core-collapse supernovae, employing the simple neutrino light bulb approximation to produce explosions rather easily. In order to estimate the explosion energy, we took into proper account nuclear recombinations and fusions consistently with the equation of state for matter not in statistical equilibrium in general. The methodology is similar to our previous work, but is somehow improved. In this paper, we studied the influence of the progenitor structure on the dynamics systematically. In order to expedite our understanding of the systematics, we constructed six parametric progenitor models, which are different in masses of Fe iron core and Si+S layer, instead of employing realistic models provided by stellar evolution calculations, which are sometimes of stochastic nature as a function of stellar mass on the main sequence. We found that the explosion energy is tightly correlated with the mass accretion rate at shock revival irrespective of dimension and the progenitors with light iron cores but with rather high entropies, which have yet to be produced by realistic stellar evolution calculations, may reproduce the canonical values of explosion energy and nickel mass. The mass of the Si+S layer is also important in the mass accretion history after bounce, on the other hand; the higher mass accretion rates and resultant heavier cores tend to hamper strong explosions.

79 ASTRONOMY AND ASTROPHYSICS↗

Low Activation Joining of SiC/SiC Composites for Fusion Applications

The use of SiC composites in fusion environments may require joining of plates using reactive joining or brazing. One promising reactive joining method is the use of solid-state displacement reactions between Si and TiC to produce Ti3SiC2 + SiC. We continue to explore the processing envelope for this type of joint for the TITAN collaboration to produce the best possible joints to undergo irradiation studies in HFIR. The TITAN collaboration has designed miniature torsion joints for preparation, testing, and irradiation in HFIR. As part of that project PNNL synthesized 40 miniature torsion joints and several were tested for shear strength prior to irradiation testing in HFIR. The resulting tests indicated that joint fixture alignment problems cause joint strengths to be lower than optimal but that several joints that were well aligned had high shear strengths and promising mechanical properties. High joint strengths cause non-planar shear fracture and complicate strength analysis for these miniature torsion joints.

36 MATERIALS SCIENCE↗

Optical phased arrays with evanescently-coupled antennas

An optical phased array formed of a large number of nanophotonic antenna elements can be used to project complex images into the far field. These nanophotonic phased arrays, including the nanophotonic antenna elements and waveguides, can be formed on a single chip of silicon using complementary metal-oxide-semiconductor (CMOS) processes. Directional couplers evanescently couple light from the waveguides to the nanophotonic antenna elements, which emit the light as beams with phases and amplitudes selected so that the emitted beams interfere in the far field to produce the desired pattern. In some cases, each antenna in the phased array may be optically coupled to a corresponding variable delay line, such as a thermo-optically tuned waveguide or a liquid-filled cell, which can be used to vary the phase of the antenna's output (and the resulting far-field interference pattern).

42 ENGINEERING↗

One-step synthesis of lightly doped porous silicon nanowires in HF/AgNO{sub 3}/H{sub 2}O{sub 2} solution at room temperature

One-step synthesis of lightly doped porous silicon nanowire arrays was achieved by etching the silicon wafer in HF/AgNO{sub 3}/H{sub 2}O{sub 2} solution at room temperature. The lightly doped porous silicon nanowires (pNWs) have circular nanopores on the sidewall, which can emit strong green fluorescence. The surface morphologies of these nanowires could be controlled by simply adjusting the concentration of H{sub 2}O{sub 2}, which influences the distribution of silver nanoparticles (Ag NPs) along the nanowire axis. A mechanism based on Ag NPs-induced lateral etching of nanowires was proposed to explain the formation of pNWs. The controllable and widely applicable synthesis of pNWs will open their potential application to nanoscale photoluminescence devices. - Graphical abstract: The one-step synthesis of porous silicon nanowire arrays is achieved by chemical etching of the lightly doped p-type Si (100) wafer at room temperature. These nanowires exhibit strong green photoluminescence. SEM, TEM, HRTEM and photoluminescence images of pNWs. The scale bars of SEM, TEM HRTEM and photoluminescence are 10 {mu}m, 20 nm, 10 nm, and 1 {mu}m, respectively. Highlights: Black-Right-Pointing-Pointer Simple one-step synthesis of lightly doped porous silicon nanowire arrays is achieved at RT. Black-Right-Pointing-Pointer Etching process and mechanism are illustrated with etching model from a novel standpoint. Black-Right-Pointing-Pointer As-prepared porous silicon nanowire emits strong green fluorescence, proving unique property.

36 MATERIALS SCIENCE↗

Achieving superior mechanical properties: Tailoring multicomponent microstructure in AISI 9254 spring steel through a two-stage Q&P process and nanoscale carbide integration

In the pursuit of lightweight, durable steel, we have successfully developed a multicomponent structure in AISI 9254 spring steel using a two-stage quenching and partitioning (Q&P) process. The primary objective of this process was to engineer an optimized microstructure consisting of nanobainite, martensite, and nano-carbides. Utilizing the insights gained from the results of advanced techniques such as X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), and atom probe tomography (APT) performed on the as-received AISI 9254 spring steel, we refined the quenching and partitioning (Q&P) path, leading to the successful establishment of a bainitic transformation for superior mechanical properties. Our tensile tests revealed a high yield strength (≈ 1600 ± 25 MPa) and ultimate tensile strength (≈ 1850 ± 50 MPa), along with considerable elongation (≈ 11.15 ± 0.25%). We also identified that pre-formed martensite lath defects and high silicon content play crucial roles during the Q&P process, preventing carbide coalescence and increasing strain-hardening capacity. Finally, this study demonstrates the potential of a Q&P process to generate high-strength, ductile steel for automotive and aerospace applications.

36 MATERIALS SCIENCE↗

Microwave irradiation induced band gap tuning of MoS{sub 2}-TiO{sub 2} nanocomposites

The MoS{sub 2}-TiO{sub 2} nanocomposites have been synthesized by sol-gel method and characterized by different microscopic and spectroscopic techniques. The crystallinity of these nanocomposites has been confirmed by X-ray diffraction (XRD) analysis. The Raman spectrum of MoS{sub 2}-TiO{sub 2} nanocomposites consists of three distinct peaks (E{sup 1} {sub g}, E{sup 1} {sub 2g} and A{sub 1g}) which are associated with TiO{sub 2} and MoS{sub 2}. The morphological study is carried out by scanning electron microscope. The effect of microwave irradiation on the band gap of MoS{sub 2}-TiO{sub 2} nanocomposites has been investigated; it is observed that the microwave irradiation causes decrease in the band gap of MoS{sub 2}-TiO{sub 2} nanocomposites. The microwave treated MoS{sub 2}-TiO{sub 2} thin films offers a novel process route in treating thin films for commercial applications.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Shell-Protective Secondary Silicon Nanostructures as Pressure-Resistant High-Volumetric-Capacity Anodes for Lithium-Ion Batteries

Here, the nanostructure design of a prereserved hollow space to accommodate 300% volume change of silicon anodes has created exciting promises for high-energy batteries. However, challenges with weak mechanical stability during the calendering process of electrode fabrication and poor volumetric energy density remain to be solved. Here we fabricated a pressure-resistant silicon structure by designing a dense silicon shell coating on secondary micrometer particles, each consisting of many silicon nanoparticles. The silicon skin layer significantly improves mechanical stability, while the inner porous structure efficiently accommodates the volume expansion. Such a structure can resist a high pressure of over 100 MPa and is well-maintained after the calendering process, demonstrating a high volumetric capacity of 2041 mAh cm–3. In addition, the dense silicon shell decreases the surface area and thus increases the initial Coulombic efficiency. With further encapsulation with a graphene cage, which allows the silicon core to expand within the cage while retaining electrical contact, the silicon hollow structure exhibits a high initial Coulombic efficiency and fast rise of later Coulombic efficiencies to >99.5% and superior stability in a full-cell battery.

25 ENERGY STORAGE↗

Precision fabrication of large area silicon-based geometrically enhanced x-ray photocathodes using plasma etching

Geometrically enhanced photocathodes are currently being developed for use in applications that seek to improve detector efficiency in the visible to X-ray ranges. Various photocathode surface geometries are typically chosen based on the detector operational wavelength region, along with requirements such as spatial resolution, temporal resolution and dynamic range. Recently, a structure has been identified for possible use in the X-ray region. This anisotropic high aspect ratio structure has been produced in silicon using inductively coupled plasma (ICP) etching technology. The process is specifically developed with respect to the pattern density and geometry of the photocathode chip to achieve the desired sidewall profile angle. The tapered sidewall profile angle precision has been demonstrated to be within ± 2.5° for a ~ 12° wall angle, with feature sizes that range between 4-9 μm in diameter and 10-25 μm depth. Here we discuss the device applications, design and present the method used to produce a set of geometrically enhanced high yield X-ray photocathodes in silicon.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Environmentally Sound One-Step Solar Silicon From Natural Quartzite

This project aimed to demonstrate a new molten salt electrodeposition process to go straight from low-cost silica at $200/tonne ($40¢/kg Si basis) to polysilicon in a single step using less than 30 kWh/kg. This would eliminate the carbothermic reduction step and all direct greenhouse emissions, along with 90% of the energy. It would also eliminate the chemical hazards of chlorosilane handling which have resulted in multiple fatalities in the polysilicon industry – in Japan, the US and China. This project had the following major accomplishments: Stakeholder engagement indicated that the solar silicon market is very sensitive to price, provided quality is sufficient. The most important measure of silicon quality is not purity but carrier lifetime, as many impurities can reduce performance at concentrations too small to measure; Experiments set a baseline of current efficiency which is too low for commercial application (~3%), with electronic current ruled out as a mechanism for reduced current efficiency; A scale-up plant narrative narrative described a potential plant and formed the basis for the TEA components; TEA showed that current efficiency, large cell size, and zirconia membrane lifetime are key factors which determine capital and operating costs for the process.

14 SOLAR ENERGY↗

Schrödinger cat states of a nuclear spin qudit in silicon

High-dimensional quantum systems are a valuable resource for quantum information processing. They can be used to encode error-correctable logical qubits, which has been demonstrated using continuous-variable states in microwave cavities or the motional modes of trapped ions. For example, high-dimensional systems can be used to realize ‘Schrödinger cat’ states, which are superpositions of widely displaced coherent states that can be used to illustrate quantum effects at large scales. Recent proposals have suggested encoding qubits in high-spin atomic nuclei, which are finite-dimensional systems that can host hardware-efficient versions of continuous-variable codes. Here, in this study, we demonstrate the creation and manipulation of Schrödinger cat states using the spin-7/2 nucleus of an antimony atom embedded in a silicon nanoelectronic device. We use a multi-frequency control scheme to produce spin rotations that preserve the symmetry of the qudit, and we constitute logical Pauli operations for qubits encoded in the Schrödinger cat states. Our work demonstrates the ability to prepare and control non-classical resource states, which is a prerequisite for applications in quantum information processing and quantum error correction, using our scalable, manufacturable semiconductor platform.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Production of polycrystalline silicon from monosilane in the electron-beam plasma

The results of experimental studies concerned with deposition of solar-grade silicon from monosilane in the electron-beam plasma are reported. With the laboratory equipment, the silicon deposition rate attains up to 40 g h{sup -1} at the expenditure of energy for the process 78 kW h kg{sup -1} and the efficiency of conversion of monosilane into silicon at about 50%. Analysis of the chemical composition of the resulting material shows that the material fits the requirements imposed on solar-grade silicon. The method suggested in the study holds promise in industrial-scale applications.

36 MATERIALS SCIENCE↗

EUROPIUM s-PROCESS SIGNATURE AT CLOSE-TO-SOLAR METALLICITY IN STARDUST SiC GRAINS FROM ASYMPTOTIC GIANT BRANCH STARS

Individual mainstream stardust silicon carbide (SiC) grains and a SiC-enriched bulk sample from the Murchison carbonaceous meteorite have been analyzed by the Sensitive High Resolution Ion Microprobe-Reverse Geometry for Eu isotopes. The mainstream grains are believed to have condensed in the outflows of {approx}1.5-3 M{sub Sun} carbon-rich asymptotic giant branch (AGB) stars with close-to-solar metallicity. The {sup 151}Eu fractions [fr({sup 151}Eu) = {sup 151}Eu/({sup 151}Eu+{sup 153}Eu)] derived from our measurements are compared with previous astronomical observations of carbon-enhanced metal-poor stars enriched in elements made by slow neutron captures (the s-process). Despite the difference in metallicity between the parent stars of the grains and the metal-poor stars, the fr({sup 151}Eu) values derived from our measurements agree well with fr({sup 151}Eu) values derived from astronomical observations. We have also compared the SiC data with theoretical predictions of the evolution of Eu isotopic ratios in the envelope of AGB stars. Because of the low Eu abundances in the SiC grains, the fr({sup 151}Eu) values derived from our measurements show large uncertainties, in most cases being larger than the difference between solar and predicted fr({sup 151}Eu) values. The SiC aggregate yields a fr({sup 151}Eu) value within the range observed in the single grains and provides a more precise result (fr({sup 151}Eu) = 0.54 {+-} 0.03, 95% conf.), but is approximately 12% higher than current s-process predictions. The AGB models can match the SiC data if we use an improved formalism to evaluate the contribution of excited nuclear states in the calculation of the {sup 151}Sm(n, {gamma}) stellar reaction rate.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗

Strain relaxation in single crystal SrTiO{sub 3} grown on Si (001) by molecular beam epitaxy

An epitaxial layer of SrTiO{sub 3} grown directly on Si may be used as a pseudo-substrate for the integration of perovskite oxides onto silicon. When SrTiO{sub 3} is initially grown on Si (001), it is nominally compressively strained. However, by subsequent annealing in oxygen at elevated temperature, an SiO{sub x} interlayer can be formed which alters the strain state of SrTiO{sub 3}. We report a study of strain relaxation in SrTiO{sub 3} films grown on Si by molecular beam epitaxy as a function of annealing time and oxygen partial pressure. Using a combination of x-ray diffraction, reflection high energy electron diffraction, and transmission electron microscopy, we describe the process of interfacial oxidation and strain relaxation of SrTiO{sub 3} on Si (001). Understanding the process of strain relaxation of SrTiO{sub 3} on silicon will be useful for controlling the SrTiO{sub 3} lattice constant for lattice matching with functional oxide overlayers.

36 MATERIALS SCIENCE↗

Local Resistance Profiling of Ultra Shallow Junction Annealed with Combination of Spike Lamp and Laser Annealing Processes using Scanning Spreading Resistance Microscope

Local resistance profiles of ultra shallow boron and arsenic implanted into silicon with energies of 2.0 and 4.0 keV and doses of 2.0x10{sup 15} and 1.0x10{sup 15} ions/cm{sup 2} activated by a combination of conventional spike lamp and laser annealing processes were measured by scanning spreading resistance microscope (SSRM) with a depth resolution of less than 10 nm. The lowest local resistance at the low resistance region in 2.0 keV boron implanted silicon with 1050 deg. C spike lamp annealing followed by 0.35 kW/mm{sup 2} laser annealing was half of that without laser annealing. The lowest local resistance at the low resistance region in the arsenic implanted silicon activated by 1050 deg. C spike lamp annealing followed by 0.39 kW/mm{sup 2} laser annealing was 74% lower than that followed by 0.36 kW/mm{sup 2} laser annealing. The lowest local resistances at the low resistance regions in the arsenic implanted silicon with 0.36 and 0.39 kW/mm{sup 2} laser annealing followed by 1050 deg. C spike lamp annealing were 41 and 33% lower than those with spike lamp annealing followed by laser annealing. Laser annealing followed by spike lamp annealing could suppress the diffusion of the impurities and was suitable for making the ultra shallow and low resistance regions.

36 MATERIALS SCIENCE↗

Laser material processing with tightly focused cylindrical vector beams

We demonstrate a comprehensive modification study of silica glass, crystalline silicon, and amorphous silicon film, irradiated by tightly focused cylindrical vector beams with azimuthal and radial polarizations. The evidence of the longitudinal field associated with radial polarization is revealed by second harmonic generation in z-cut lithium niobate crystal. Despite the lower threshold of ring-shaped modification of silicon materials, the modification in the center of single pulse radially polarized beam is not observed. The phenomenon is interpreted in terms of the enhanced reflection of longitudinal component at the interface with high-index contrast, demonstrating that the longitudinal component is inefficient for the flat surface modification. Enhanced interaction of the longitudinal light field with silicon nanopillar structures produced by the first pulse of double-pulse irradiation is also demonstrated.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

A Survey on the Design, Detection, and Prevention of Pre-Silicon Hardware Trojans

The complexity of the semiconductor design lifecycle and globalized manufacturing process creates concern over the threat of deliberate malicious alterations, or hardware Trojans, being inserted into microelectronic designs. This has resulted in a significant corpus of hardware Trojan research including Trojan design and benchmarking efforts and development of corresponding metrics and detection and prevention techniques, over the last two decades. In this survey, we first highlight efforts in Trojan design and benchmarking, followed by a cataloging of seminal and recent works in Trojan detection and prevention and their accompanied metrics. Given the volume of literature in this field, this survey considers only pre-silicon techniques. We make this distinction between pre- and post-silicon to properly scope and provide appropriate context into the capabilities of existing hardware Trojan literature. Each major section (design, prevention, and detection) is accompanied by insights, and common pitfalls, which we highlight can be addressed by future research.

42 ENGINEERING↗