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At least 757 records · Page 42

In Situ Resource Utilization (ISRU) Envisioned Future Priorities

The National Aeronautics and Space Administration (NASA) of the United States of America (US) has initiated the Artemis Moon to Mars program to send astronauts (the first woman and person of color) back to the lunar surface, create a sustainable human lunar exploration program, and lead the first human exploration mission to the Mars surface in the 2030’s. A major objective of this program is to characterize the resources that exist on the Moon and Mars, and learn how to utilize them for sustained and affordable exploration. Commonly known as In Situ Resource Utilization (ISRU), the search for, acquisition, and processing of resources in space has the potential to greatly reduce the dependency on transporting mission consumables and infrastructure from Earth, thereby reducing mission costs, risks, and dependency on Earth. Through the extraction and processing of resources into mission commodities such as rocket propellants, life support consumables, and fuel cell reactants, ISRU enhances and evolves the cis-lunar, lander, and surface transportation systems required for human exploration; expanding and ehancing HOW humans get to, explore, and return from the Moon. Through the extraction and processing of resources into metals, silicon, and other manufacturing and construction feedstock, ISRU enhances and allows for the expansion of critical infrastructure through in situ manufacturing and construction capabilities needed for WHAT humans do on the Moon and in cis-lunar space. Because of this, ISRU supports and enables commercial involvement beyond NASA and governmental agencies by both lowering the cost of sustained transportation to/from/on the Moon as well as supporting the market required for needing these transportation systems. To achieve this vision, NASA’s Space Technology Mission Directorate (STMD) ensures the coordinated development of ISRU and other critical space and surface infrastructure elements such as propulsion, power, manufacturing, construction, and robotics through the Strategic Technology Architecture Roundtable (STAR) process. Through STAR, an integrated framework and process has been created allowing for capabilities and technologies to be linked and assessed, gaps to be identified, specifications and metrics to be established, and provide a means to prioritize and implement technology development and missions. For lunar ISRU, three primary areas of development have been initiated, (1) understanding, mapping, extracting, and processing water and other volatiles found in polar permanently shadowed regions (PSRs), (2) methods, technologies to extract oxygen from regolith, and (3) methods, technologies, and use cases for metals, silicon, and other feedstock commodities extracted and produced from lunar resources. This presentation will briefly discuss the STAR process and elaborate on the current status and future plans for ISRU development, demonstration, and architecture implementation of NASA’s Envisioned Future Priorities plan for ISRU.

In Situ Resource Utilization↗

Process for Patterning Indium for Bump Bonding

An innovation was created for the Cosmology Large Angular Scale Surveyor for integration of low-temperature detector chips with a silicon backshort and a silicon photonic choke through flipchip bonding. Indium bumps are typically patterned using liftoff processes, which require thick resist. In some applications, it is necessary to locate the bumps close to high-aspect-ratio structures such as wafer through-holes. In those cases, liftoff processes are challenging, and require complicated and time-consuming spray coating technology if the high-aspect-ratio structures are delineated prior to the indium bump process. Alternatively, processing the indium bumps first is limited by compatibility of the indium with subsequent processing. The present invention allows for locating bumps arbitrarily close to multiple-level high-aspect-ratio structures, and for indium bumps to be formed without liftoff resist. The process uses the poor step coverage of indium deposited on a silicon wafer that has been previously etched to delineate the location of the indium bumps. The silicon pattern can be processed through standard lithography prior to adding the high-aspect-ratio structures. Typically, high-aspectratio structures require a thick resist layer so this layer can easily cover the silicon topography. For multiple levels of topography, the silicon can be easily conformally coated through standard processes. A blanket layer of indium is then deposited onto the full wafer; bump bonding only occurs at the high points of the topography.

Denis, Kevin↗

Delta-Doped CCDs for Enhanced UV Performance

Thin, backside-illuminated CCds are modified by growing a delta-doped silicon layer on the back surface using molecular beam epitaxy. Delta-doped CCDs exhibit stable and uniform 100 percent internal quantum efficiency. The process consists of growth of an epitaxial silicon layer on a fully-processed commercial CCd die in which 30 percent of a monolayer of boron atoms are incorporated into the lattice nominally in a single atomic layer. Long term stability was tested and showed no degradation of the device quantum efficiency over sixteen months.

silicon↗

Micro-Mechanical Voltage Tunable Fabry-Perot Filters Formed in (111) Silicon

The MEMS (Micro-Electro-Mechanical-Systems) technology is quickly evolving as a viable means to combine micro-mechanical and micro-optical elements on the same chip. One MEMS technology that has recently gained attention by the research community is the micro-mechanical Fabry-Perot optical filter. A MEMS based Fabry-Perot consists of a vertically integrated structure composed of two mirrors separated by an air gap. Wavelength tuning is achieved by applying a bias between the two mirrors resulting in an attractive electrostatic force which pulls the mirrors closer. In this work, we present a new micro-mechanical Fabry-Perot structure which is simple to fabricate and is integratable with low cost silicon photodetectors and transistors. The structure consists of a movable gold coated oxide cantilever for the top mirror and a stationary Au/Ni plated silicon bottom mirror. The fabrication process is single mask level, self aligned, and requires only one grown or deposited layer. Undercutting of the oxide cantilever is carried out by a combination of RIE and anisotropic KOH etching of the (111) silicon substrate. Metallization of the mirrors is provided by thermal evaporation and electroplating. The optical and electrical characteristics of the fabricated devices were studied and show promissing results. A wavelength shift of 120nm with 53V applied bias was demonstrated by one device geometry using 6.27 micrometer air gap. The finesse of the structure was 2.4. Modulation bandwidths ranging from 91KHz to greater than 920KHz were also observed. Theoretical calculations show that if mirror reflectivity, smoothness, and parallelism are improved, a finesse of 30 is attainable. The predictions also suggest that a reduction of the air gap to 1 micrometer results in an increased wavelength tuning range of 175 nm with a CMOS compatible 4.75V.

Patterson, James D.↗

Encapsulation task of the low-cost silicon solar array project. Investigation of test methods, material properties, and processes for solar cell encapsulants

The results of an investigation of solar module encapsulation systems applicable to the Low-Cost Solar Array Project 1986 cost and performance goals are presented. Six basic construction elements were identified and their specific uses in module construction defined. A uniform coating basis was established for each element. The survey results were also useful in revealing price ranges for classes of materials and estimating the cost allocation for each element within the encapsulating cost goal. The six construction elements were considered to be substrates, superstrates, pottants, adhesives, outer covers and back covers.

Willis, P. B.↗

Process for the controlled growth of single-crystal films of silicon carbide polytypes on silicon carbide wafers

This invention is a method for the controlled growth of single-crystal semiconductor device quality films of SiC polytypes on vicinal (0001) SiC wafers with low tilt angles. Both homoepitaxial and heteroepitaxial SiC films can be produced on the same wafer. In particular, 3C-SiC and 6H-SiC films can be produced within selected areas of the same 6H-SiC wafer.

Powell, J. Anthony↗

Emerging polyheterocyclic films, coatings and resins - Thermoplastic polyquinolines

The processing and performance characteristics of a soluble, thermoplastic polyquinoline suggest its utility in a variety of high performance applications. The polymer is characterized by excellent thermal and oxidative stability, very low moisture absorption, good mechanical properties, very low dielectric constant, and an unusually low thermal expansion coefficient. This polymer, designated PQ-100 (TM), can be cast into strong, transparent, free standing films from common solvents. Coatings of variable thickness can be spin-coated on to silicon and other surfaces. After processing into films, PQ-100 (TM) can be rendered insoluble in a wide range of solvents using a proprietary process. The low CTE contributes to very low residual stress when the polymer is spin-coated onto silicon wafers. PQ-100 (TM) is currently under evaluation for use as an interlayer dielectric substrate in high-density interconnect applications, including multichip modules. Many of the characteristics of the polymer also suggest its utility as a high-performance film and as a matrix resin for specialty composite applications.

Hendricks, Neil H.↗

Development of quantum dot materials for infrared cameras (Final CRADA Report)

The aim of this project was to develop scalable methods to produce infrared (IR) mercury telluride (HgTe) colloidal quantum dot (CQD) thin films and demonstrate their utility in a proof-of-concept monolithic SWIR focal plane array (FPA). These objectives were accomplished by scaling up the HgTe CQD synthesis, characterizing physical and electrical properties of HgTe CQDs, evaluating solution-processed coating methods for quality and efficiency, and developing a process flow to integrate HgTe CQDs with commercial-off-the-shelf silicon CMOS readout circuits by solution-processed coating to produce monolithic FPAs. The FPA is the image sensor in an infrared imaging system responsible for detecting and processing reflected or emitted light into an infrared image of the scene under observation. The quality of the image is determined by the sensitivity and resolution of the image sensor in the system. Higher resolution IR FPAs enable higher throughput in manufacturing quality assurance, wider field of view for autonomous navigation, and longer range surveillance for defense.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Clean Energy Manufacturing: Renewable Energy Technology Benchmarks

The manufacturing of clean energy technologies has become a global enterprise. An analysis of four clean energy technology manufacturing processes—wind turbine components, crystalline silicon solar photovoltaic modules, light-duty vehicle lithium-ion battery cells, and light-emitting diodes—was conducted to provide a reference point for comparison over time as this sector evolves. The manufacturing supply chain analysis included processing of raw materials, making required subcomponents, and assembling final products, using benchmarks that crossed 12 economies: Brazil, Canada, China, Germany, India, Japan, Malaysia, Mexico, South Korea, Republic of China (Taiwan), the United Kingdom, and the United States. Larger economies, with extensive manufacturing supply chains and high prevailing wages, tend to retain more value added from clean energy manufacturing than small economies. Manufacturing of clean energy technologies drives extensive trade among economies to support the widely distributed supply chain links. Production of wind turbine components and photovoltaic modules is more centralized than production of light-emitting diodes and lithium-ion battery cells. Across the four clean energy technologies evaluated, there was generally an excess of manufacturing capacity relative to global supply.

benchmarks↗

The 2010 Field Demonstration of the Solar Carbothermal Reduction of Regolith to Produce Oxygen

The Moon and other space exploration destinations are comprised of a variety of oxygen-bearing minerals, providing a virtually unlimited quantity of raw material which can be processed to produce oxygen. One attractive method to extract oxygen from the regolith is the carbothermal reduction process, which is not sensitive to variations in the mineral composition of the regolith. It also creates other valuable resources within the processed regolith, such as iron and silicon metals. Using funding from NASA, ORBITEC recently built and tested the Carbothermal Regolith Reduction Module to process lunar regolith simulants using concentrated solar energy. This paper summarizes the experimental test results obtained during a demonstration of the system at a lunar analog test site on the Mauna Kea volcano on Hawaii in February 2010.

Gustafson, R. J.↗

LSA Large Area Silicon Sheet Task Continuous Liquid Feed Czochralski Growth

A process for the continuous growth of crystals by the Czochralski method, suitable for producing single silicon crystals for use in solar cells was studied. Continuous growth is the growth of 100 Kg of single silicon crystals, 10 cm in diameter, from one container. A furnace with continuous liquid replenishment of the growth crucible, accomplished by a melt-down system and a liquid transfer mechanism, with associated automatic feedback controls was developed. Elements of the transfer system were further developed and tested during actual transfer runs. Considerable simplification of the heating element of the transfer tube was achieved. Accuracy and reliability of the temperature sensor, which is part of the power input control system for the transfer tube, was improved. Electrical and thermal effectiveness were increased while assembly of the transfer tube system was further simplified.

Fiegl, G.↗

Growing Cobalt Silicide Columns In Silicon

Codeposition by molecular-beam epitaxy yields variety of structures. Proposed fabrication process produces three-dimensional nanometer-sized structures on silicon wafers. Enables control of dimensions of metal and semiconductor epitaxial layers in three dimensions instead of usual single dimension (perpendicular to the plane of the substrate). Process used to make arrays of highly efficient infrared sensors, high-speed transistors, and quantum wires. For fabrication of electronic devices, both shapes and locations of columns controlled. One possible technique for doing this electron-beam lithography, see "Making Submicron CoSi2 Structures on Silicon Substrates" (NPO-17736).

Fathauer, Obert W.↗

Experimental Measurement and Analysis of Stress/Shock Wave Propagation Speed through Pre-strained Silicone Foam Pads under Lateral Confinement

Foam materials are increasingly utilized in aerospace, military, and transportation applications to mitigate blast or shock impact. When foam materials are subjected to an external high-speed impact, shock, or blast loading, an elastic wave or shock wave will form and propagate through the thickness of the foam materials. Here, silicone foam pads, which were confined laterally and pre-strained to different levels, were experimentally characterized and theoretically analyzed to understand their effects on wave propagation characteristics under impact loading. Depending on impact velocity, either an elastic strain wave or a shock wave would be generated in the silicone foam pad with different pre-strains. Above a certain impact velocity, a shock wave will be generated whereas, below this threshold impact velocity, an elastic strain wave will be generated. This threshold impact velocity depends on the pre-strain applied to the silicone foam pad. Equations are provided to estimate the wave propagation speed for either an elastic or a shock wave from the amount of pre-strain in the silicone foam pads and the impact velocity. These equations are expected to help improve silicone foam design and assembly processes for shock or blast mitigation applications.

36 MATERIALS SCIENCE↗

Determination of Trace Silicone Contamination on Composites by Quantitative XPS and LIBS

Surface treatment and surface characterization techniques are critical to ensure that adherends are chemically activated and free of contaminants prior to adhesive bonding. Silicone contamination from mold-release agents and other sources can interfere with interfacial bonding, decreasing the durability and performance of bonded composite structures. Tools and methods are needed that can be used in a production environment to reliably detect low levels of contaminants in a rapid, simple, and cost-effective manner to improve bond reliability. In this work, surface characterization of carbon fiber reinforced polymer (CFRP) composites was performed using laser induced breakdown spectroscopy (LIBS) and the results were compared with those obtained from X-ray photoelectron spectroscopy (XPS). The objective was to investigate the ability to quantify the surface species measured by LIBS since it offers many advantages over XPS in terms of ease of use, sample preparation, and real-time results. The as-processed CFRP panels had trace surface silicone contamination from the fabrication process, the source of which was not investigated. The composites were laser treated at select average laser power levels, resulting in varying levels of contamination reduction. The Si atomic percentage measurements using XPS were conducted both before and after laser ablation. The XPS results were compared with those obtained from LIBS to assess the reliability of each technique for surface contaminant characterization. The results showed an excellent correlation in Si atomic concentration between the two techniques.

Ledesma, Rodolfo↗

Automated Array Assembly Task In-depth Study of Silicon Wafer Surface Texturizing

A low cost wafer surface texturizing process was studied. An investigation of low cost cleaning operations to clean residual wax and organics from the surface of silicon wafers was made. The feasibility of replacing dry nitrogen with clean dry air for drying silicon wafers was examined. The two stage texturizing process was studied for the purpose of characterizing relevant parameters in large volume applications. The effect of gettering solar cells on photovoltaic energy conversion efficiency is described.

Jones, G. T.↗

Growth of a delta-doped silicon layer by molecular beam epitaxy on a charge-coupled device for reflection-limited ultraviolet quantum efficiency

Low-temperature silicon molecular beam epitaxy is used to grow a delta-doped silicon layer on a fully processed charge-coupled device (CCD). The measured quantum efficiency of the delta-doped backside-thinned CCD is in agreement with the reflection limit for light incident on the back surface in the spectral range of 260-600 nm. The 2.5 nm silicon layer, grown at 450 C, contained a boron delta-layer with surface density of about 2 x 10 exp 14/sq cm. Passivation of the surface was done by steam oxidation of a nominally undoped 1.5 nm Si cap layer. The UV quantum efficiency was found to be uniform and stable with respect to thermal cycling and illumination conditions.

Hoenk, Michael E.↗

Early Career: Mesoscale Fragments of Crystalline Silicon by Chemical Synthesis (Final Technical Report)

Silicon has transformed the modern era, with applications in computing, solar cells, energy storage, and beyond. The traditional approach to making silicon is a high-temperature “top-down” process that affords only the most stable form of silicon, leaving hidden vast swathes of structure-function space. The goal of this program was to establish new approaches to making silicon-based materials from the bottom-up, allowing structural precision from the atomic level up to the bulk, and to understand how structure influences function. Key results included the development of the cyclosilane building blocks and low-temperature methods for their polymerization, as well as new tools for spectroscopic characterization. In addition to revealing new materials chemistry insights, in the five-year period covered by this award, this work resulted in 11 publications and three graduate student theses.

36 MATERIALS SCIENCE↗