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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Optical, electrical, and metallurgical properties of GaAsP alloy system and GaP related to their use as semiconducting materials
Thin cadmium-telluride semiconducting films for personal communications and telemetry system
Effect of dimensions on quantum and photovoltaic energy conversion efficiency of germanium p-n semiconducting cells
Lithium-diffuse semiconducting silicon solar cells
Piezoresistance and piezo-Hall effect in semiconducting strontium titanium oxide
Lithium drifted germanium and silicon semiconducting detectors compared with thallium activated sodium iodide crystal scintillation counter for gamma spectrometry
Experimental evidence of conduction band of semiconducting strontium titanate
Semiconducting polymer film preparation and use in contaminant detector for space cabin atmosphere
Semiconducting Si luminescence arising from recombination of holes and electrons at point defects produced by neutron or gamma ray irradiation
Annealed semiconducting Si /111/ surfaces, noting surface structure associated with very thin silicide reaction layers
Technique compresses fine ground metallic powder mixture beyond crystal fusion point. Absence of vapor pressure voids and elimination of incongruous effects permit application of technique to large scale fabrication of intermetallic compounds with specific characteristics, e.g., semiconduction, superconduction, or magnetic properties.
Miniature solid state, direction sensitive, stress transducer design with bonded semiconductive piezoresistive element for sensing residual stresses
Growth of p-type semiconducting diamond by vapor phase deposition using methane-diborane doping gas mixture in presence of diamond seed crystals
The growth of a carrier wave propagating through a negative differential mobility semiconducting sample is discussed under nonuniform dc bias conditions. A simple analytical expression for the overall numerical gain is given in terms of current density and of the input and output carrier wave velocities only. Applications to n-type GaAs are discussed.
The growth of a carrier wave propagating through a negative-differential-mobility semiconducting sample is discussed under nonuniform dc bias conditions. A simple analytical expression for the over-all numerical gain is given in terms of current density and of the input and output carrier-wave velocities only. Applications to n-type GaAs are discussed.
Research papers on superconducting interactions and properties and on amorphous materials are presented. The search for new superconductors with improved properties was largely concentrated on the study of properties of thin films. An experimental investigation of interaction mechanisms revealed no new superconductivity mechanism. The properties of high transition temperature, type 2 materials prepared in thin film form were studied. A pulsed field solenoid capable of providing fields in excess of 300 k0e was developed. Preliminary X-ray measurements were made of V3Si to determine the behavior of cell constant deformation versus pressure up to 98 kilobars. The electrical properties of amorphous semiconducting materials and bulk and thin film devices, and of amorphous magnetic materials were investigated for developing radiation hard, inexpensive switches and memory elements.
The main objective of this research is to obtain a calibration of a low concentration of charged defects in some III-V semiconducting compounds. The experimental technique being used is nuclear magnetic resonance (NMR), and the objective is to be attained through a thorough examination of the properties of the NMR lines of the nuclei in the III-V compounds. The properties of the NMR lines, and how they are influenced by the presence of charged defects are studied theoretically and experimentally.
Description of two different kinds of solid-state radiographic converter screens which have been developed. After briefly reviewing the working principles of the solid-state image converter - a sandwich type structure consisting of a photoconductive layer and an electroluminescent layer with a semiconductive layer and a black layer between them, two different kinds of radiographic converter screens are described - a radiographic amplifier screen that can be used as a substitute for the fluoroscopic screen, and a radiographic storage screen that can be used instead of radiographic films. The construction of both kinds of converters is fundamentally the same, the only difference being in the sensing photoconductive material. The radiographic amplifier screen has a moderately fast response, while the radiographic storage screen displays the image long after the irradiation is stopped.