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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 757 records · Page 42

The detrimental ratio ( ρ ): A critical metric complementing coulombic loss for long calendar-life silicon-based lithium-ion batteries

Silicon (Si) is a promising high-capacity anode in lithium-ion batteries but suffers from chronic chemical degradation and capacity fading during calendar aging, greatly hindering its automobile applications. Electrolyte engineering currently relies on conventional evaluation criteria of reducing coulombic consumption, which implicitly presume its equivalence to irreversible capacity loss and complicates battery development. Here, we introduce the detrimental ratio p to quantify the fraction of parasitic species that permanently degrades active material. This metric is independent and crucially complements total coulombic consumption for accurate performance evaluation. We systematically investigate multiple electrolyte formulations using high-precision leakage current measurements, open-circuit-voltage experiments, and post-mortem characterizations. Although some electrolytes exhibit similarly low coulombic consumption, they diverge significantly incapacity retention and p. Especially, dimethyl-carbonate-based localized-high concentration electrolyte can synergically achieve low coulombic consumption and detrimental ratio p during calendar aging, owing to its chemically inert and structurally resilient solidelectrolyte interface with minimal isolated Si material. By contrast, increasing fluoroethylene carbonate (FEC) additive content suppresses electrolyte breakdown but suffers aggravated chemical degradation of more LixSi isolation for irreversible capacity loss with arising p. This study critically reveals that the chemistry-characteristic detrimental ratio p establishes physically informed performance evaluation to pave the way for accelerating battery development.

Calendar aging↗

Simplified calculation of the area specific impedance for solid-state battery design

Simplified algebraic area specific impedance (ASI) correlations have been developed for solid-state composite battery electrodes made of a single ion conducting electrolyte, conductive additive, and intercalation active material. Two ASI expressions were developed, one for short times ( i.e. , pulsed power operation) and another for the pseudo steady state operation (i.e., sustained discharge for energy estimation). A full electrochemical model based on porous electrode theory was developed to examine the accuracy of the simplified ASI expressions. The simplified expressions agree favorably with full model results over a wide range of parameters (i.e. , electrode thicknesses, electrolyte conductivities, solid-state diffusion coefficients, specific surface areas, etc.) and conditions (i.e. , C-rates, states of charge, and pulse times). Under most conditions, the error between the full model and the correlations is well below 7 %. Higher errors were observed for the pseudo steady state expression at high/ low states of charge where the assumption of uniform reaction distributions loses validity. Here, the short time ASI has higher error at low states of charge due to the nonlinearity of the open circuit voltage equation, which is assumed linear in the formulation of the simplified algebraic expression.

25 ENERGY STORAGE↗

A novel silicon photomultiplier readout architecture for low-light applications

In this article we describe the photon detection readout electronics for the nEDM@SNS experiment. The chosen "photon counting" architecture, which utilizes high-efficiency silicon photomultipliers (SiPMs) and is appropriate for low-light applications, allows the use of a relatively high SiPM operating voltage. This maximizes photon detection efficiency and minimizes gain/efficiency voltage-dependence while eliminating direct optical cross-talk.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Quench Protection by Putting a Current-pulse Into a Coil Center-Tap in HTS Coils

Forty years ago, Lawrence Berkeley Laboratory (LBL) tested a pulsed current quench protection system for a high current density two-meter diameter two-layer solenoid at 4.5 K with a stored energy of 8.5 MJ. The energy needed to protect this magnet was 13.4 kJ from an electrolytic capacitor system charged to voltages 800 V. This method also involved the use of a well-coupled shorted secondary circuits and quench-back. The applicability of this quench protection method to HTS magnets operating at temperatures >25 K could be of interest. There are a number of questions that should be asked, as follows: 1) Can this method work for HTS coils operating at temperatures >25 K? 2) Are there batteries or capacitors that can store 2 MJ or more that have short enough discharge times for quench protection at voltages less than 2 kV? 3) Is this quench protection system cost low enough to be reasonable?

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

A Sub-Electron-Noise Multi-Channel Cryogenic Skipper-CCD Readout ASIC

The MIDNA application specific integrated circuit (ASIC) is a skipper-CCD readout chip fabricated in a 65 nm LP-CMOS process that is capable of working at cryogenic temperatures. The chip integrates four front-end channels that process the skipper-CCD signal and performs differential averaging using a dual slope integration (DSI) circuit. Each readout channel contains a pre-amplifier, a DC restorer, and a dual-slope integrator with chopping capability. The integrator chopping is a key system design element in order to mitigate the effect of low-frequency noise produced by the integrator itself, and it is not often required with standard CCDs. Each channel consumes 4.5 mW of power, occupies 0.156 mm${^2}$ area and has an input referred noise of 2.7${\mu\nu}_{rms}$. It is demonstrated experimentally to achieve sub-electron noise when coupled with a skipper-CCD by means of averaging samples of each pixel. Here, sub-electron noise is shown in three different acquisition approaches. The signal range is 6000 electrons. The readout system achieves 0.2${e^{-}}$ RMS by averaging 1000 samples with MIDNA both at room temperature and at 180 Kelvin.

1/f noise↗

Ultralow Voltage GaN Vacuum Nanodiodes in Air

The III-nitride semiconductors have many attractive properties for field-emission vacuum electronics, including high thermal and chemical stability, low electron affinity, and high breakdown fields. In this work, we report top-down fabricated gallium nitride (GaN)-based nanoscale vacuum electron diodes operable in air, with record ultralow turn-on voltages down to ~0.24 V and stable high field-emission currents, tested up to several microamps for single-emitter devices. We leverage a scalable, top-down GaN nanofabrication method leading to damage-free and smooth surfaces. Gap-dependent and pressure-dependent studies provide new insights into the design of future, integrated nanogap vacuum electron devices. The results show promise for a new class of high-performance and robust, on-chip, III-nitride-based vacuum nanoelectronics operable in air or reduced vacuum.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

GaN MOCVD Growth on Native substrates for High Voltage (15-20 KV) Vertical Power Devices

This project aims to develop metalorganic chemical vapor deposition (MOCVD) homoepitaxy of GaN on native substrates with fast growth rate (15-20 μm/hr), low background doping (low-10 15 cm -3 ) and smooth surface morphology via comprehensive understanding of the crystal growth process including high quality GaN substrate development and surface preparation, impurity and native defects control, and their impacts on the breakdown field. The team successfully developed a new growth process by introducing the laser-assisted MOCVD (LA-MOCVD) process to address the limited growth rates of GaN in the traditional MOCVD process. Specifically, the use of the CO2 laser with lasing wavelength of 9.219 μm, the strong coupling between the laser beam with the ammonia (GaN MOCVD precursor) leads to efficient decomposition of NH3 which significantly increases the effective group V/III molar ratio and thus suppresses C impurity incorporation in MOCVD GaN. The reduction in C incorporation in LA-MOCVD GaN is especially prominent when the GaN growth rate is fast (> 10 μm/hr), which allows to develop thick GaN films with high crystalline quality and low controllable doping needed for vertical high power device applications. The results of this project lead to the demonstration of vertical GaN PN diodes with record breakdown voltage of ~ 8kV with high Baliga’s figure of merit.

24 POWER TRANSMISSION AND DISTRIBUTION↗

GaN Core-shell Nanofin Vertical Transistor (CoNVerT): A New Direction for Power Electronics (Final Scientific/Technical Report)

A novel power transistor architecture, the GaN c ore-shell n anofin ver tical transistor (CoNVerT) to address fundamental challenges in realizing the ultimate limit of GaN power transistor performance was explored experimentally. This technology promises ultra-high-efficiency high voltage/high power applications (e.g. DC/DC converters, motor control, fast charging, actuation), as well as to operate in harsh environments. The device exploits a vertical superjunction structure based on an experimentally-validated core-shell nanofin growth process in which lateral p-n heterojunctions are formed in a single growth step, while still maintaining vertical current flow for compact die size and low cost. The concept leverages the best properties of GaN for mid-range voltage applications: high mobility, high breakdown voltage, and native heterojunction enhancement-mode operation. Due to the crystallographic nature of the nanofin growth by molecular beam epitaxy, the sidewall heterojunctions occur on non-polar planes, resulting in ultra-smooth interfaces for high mobility, no sidewall etch damage and related surface/interface states, and elimination of piezoelectric effects that can limit reliability in conventional structures. This also facilitates superjunction formation for maximum device performance, and the selective-area growth of the nanofin results in dislocation-free growth, even on low-cost Si (111) substrate. In this program, core-shell nanofins were grown by molecular beam epitaxy, test structures to evaluate the doping, resistivity, and other electrical properties were fabricated, and the material and test structures were characterized in detail. The work identified clear potential (e.g., the doping was well controlled as required for superjunction concepts), but also additional areas that require additional effort to resolve (some unexpected crystal defects were encountered that require additional engineering to overcome). Simulation studies of the proposed concept validate that the fundamental approach is very promising, but additional effort in experimental realization is needed.

42 ENGINEERING↗

Electronic thermal transport measurement in low-dimensional materials with graphene non-local noise thermometry

In low-dimensional systems, the combination of reduced dimensionality, strong interactions and topology has led to a growing number of many-body quantum phenomena. Thermal transport, which is sensitive to all energy-carrying degrees of freedom, provides a discriminating probe of emergent excitations in quantum materials and devices. However, thermal transport measurements in low dimensions are dominated by the phonon contribution of the lattice, requiring an experimental approach to isolate the electronic thermal conductance. In this work we measured non-local voltage fluctuations in a multi-terminal device to reveal the electronic heat transported across a mesoscopic bridge made of low-dimensional materials. Using two-dimensional graphene as a noise thermometer, we measured the quantitative electronic thermal conductance of graphene and carbon nanotubes up to 70 K, achieving a precision of ~1% of the thermal conductance quantum at 5 K. Employing linear and nonlinear thermal transport, we observed signatures of energy transport mediated by long-range interactions in one-dimensional electron systems, in agreement with a theoretical model.

36 MATERIALS SCIENCE↗

A High Potential, Low Capacity Fade Rate Iron Complex Posolyte for Aqueous Organic Flow Batteries

An iron complex, tris(4,4'-bis(hydroxymethyl)-2,2'-bipyridine) iron dichloride is reported, which operates at near-neutral pH with a redox potential of 0.985 V versus SHE. This high potential compound is employed in the posolyte of an aqueous flow battery, paired with bis(3-trimethylammonio)propyl viologen tetrachloride in the negolyte, exhibiting an open-circuit voltage of 1.3 V at near-neutral pH. It demonstrates excellent cycling performance with a low temporal capacity fade rate of 0.07% per day over 35 days of cycling. The extended cycling lifetime is the result of low permeability and improved structural stability of the newly developed iron complex compared to that of the iron tris(bipyridine) complex. The combination of high redox potential and low capacity fade rate compares favorably with those of all previously demonstrated organic and organometallic aqueous posolytes. Extensive investigation into the possible degradation mechanisms, including post-mortem chemical and electrochemical analyses, indicates that stepwise ligand dissociations of the iron complex are responsible for the reported capacity loss during cell cycling. Further, this investigation provides unprecedented insight to guide further improvements of such metalorganic compounds for energy storage and conversion applications.

25 ENERGY STORAGE↗

A Sub-electron-noise Skipper-CCD Readout ASIC with Improved Channel-to-channel Isolation and an Integrated Cryogenic Voltage Reference

The MIDNA application specific integrated circuits (ASICs) are a series of skipper-CCD readout chips fabricated in a 65 nm low-power CMOS process that implement a correlated double sampling signal processing chain based on dual-slope integrators. They are capable of working from room to cryogenic temperatures, down to 84 K. The present iteration of the ASIC has been fabricated including several design updates and the addition of an on-chip voltage reference, resulting in improved performance. This work presents the main vulnerabilities solved, the changes carried out, and the resulting performance benefits. Measurements with a skipper-CCD and the ASIC at 140 K showed that the single-electron resolution can be reached by averaging the measured charge in the analog domain using the analog pile-up technique with a readout noise as low as 0.11 erms of equivalent charge for 1200 samples. The channel-to-channel crosstalk was also characterized showing values better than -62 dB.

Alcalde Bessia, Fabricio↗

A Sub-electron-noise Skipper-CCD Readout ASIC with Improved Channel-to-channel Isolation and an Integrated Cryogenic Voltage Reference

The MIDNA application specific integrated circuits (ASICs) are a series of skipper-CCD readout chips fabricated in a 65 nm low-power CMOS process that implement a correlated double sampling signal processing chain based on dual-slope integrators. They are capable of working from room to cryogenic temperatures, down to 84 K. The present iteration of the ASIC has been fabricated including several design updates and the addition of an on-chip voltage reference, resulting in improved performance. This work presents the main vulnerabilities solved, the changes carried out, and the resulting performance benefits. Measurements with a skipper-CCD and the ASIC at 140 K showed that the single-electron resolution can be reached by averaging the measured charge in the analog domain using the analog pile-up technique with a readout noise as low as 0.11 erms of equivalent charge for 1200 samples. The channel-to-channel crosstalk was also characterized showing values better than -62 dB.

Alcalde Bessia, Fabricio↗

High Power Density Cost-Effective MVDC Aircraft Cable

To make the power density of electric aircraft closer to conventional aircraft, an electric power system (EPS) with high power delivery and low system mass is necessary. As an essential component of aircraft EPS, cables are necessary to transmit power from one node to another. Virginia Tech will design high-power density, cost-effective ±5 kV cables for twin-aisle all-electric aircraft. Innovations include conductors with increased current-carrying capacity and a multilayer, multifunctional insulation system made of exceptionally high thermal conductivity materials. Designed for DC voltage, the new insulator will allow fewer partial discharge events and provide improved electromagnetic interference protection.

42 ENGINEERING↗

Novel Quadratic High Gain Boost Converter With Adaptive Soft-Switching Scheme and Reduced Conduction Loss

In this article, an improved soft-switching quadratic boost converter is proposed. Instead of inserting an additional active clamp or auxiliary zero-voltage transition circuit at the switching node, the proposed topology connects the high-voltage switching node to the input diode node by replacing one of the input diodes with a low-rated switch. The proposed topology can attain soft-switching condition for all the switches and input diode turns- off under zero-current switching (ZCS). The operation of input-side switch not only aids zero-voltage switching (ZVS) turn- on for the main switch but also helps in reducing the conduction loss. Also, the input-side switch operates under ZCS turn- on and ZVS turn- off , making it a loss economical solution. An adaptive timing scheme for driving the input switch is proposed, which can ensure soft-switching condition under varying gain and load range. The detailed operational modes, analysis, and design considerations of the proposed topology are presented. A 250 W hardware prototype is built to validate the performance of the proposed converter operating at 100 kHz switching frequency. Results with adaptive soft-switching scheme shows that the converter is modulated to achieve its best efficiency condition under various system conditions. Furthermore, a peak efficiency of 96.1% at 155 W and efficiencies above 95.75% over a wide load range are achieved using all Si devices.

14 SOLAR ENERGY↗

Large mass single electron resolution detector for dark matter and neutrino elastic interaction searches

Large mass single electron resolution solid state detectors are desirable to search for low mass dark matter candidates and to measure coherent elastic neutrino nucleus scattering (CEvNS). In this paper we present results from a novel 100 g phonon-mediated Si detector with a new interface architecture. This detector gives a baseline resolution of ~ 1e - /h + pair and a leakage current on the order of 10 -16 A. This was achieved by removing the direct electrical contact between the Si crystal and the metallic electrode, and by increasing the phonon absorption efficiency of the sensors. The phonon signal amplification in the detector shows a linear increase while the signal to noise ratio improves with bias voltage, up to 240 V. This feature enables the detector to operate at a low energy threshold which is beneficial for dark matter and CEvNS like searches.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

On the Electrochemical Properties of Carbon-Coated NaCrO 2 for Na-Ion Batteries

NaCrO 2 is a promising cathode for Na-ion batteries. However, further studies of the mechanisms controlling its specific capacities and cycle stability are needed for real-world applications in the future. This study reveals, for the first time, that the typical specific capacity of ~110 mAh/g reported by many researchers when the charge/discharge voltage window is set between 2.0 and 3.6 V vs. Na/Na + is actually controlled by the low electronic conductivity at the electrode/electrolyte interface. Through wet solution mixing of NaCrO 2 particles with carbon precursors, uniform carbon coating can be formed on the surface of NaCrO 2 particles, leading to unprecedented specific capacities at 140 mAh/g, which is the highest specific capacity ever reported in the literature with the lower and upper cutoff voltages at the aforementioned values. However, such carbon-coated NaCrO 2 with ultrahigh specific capacity does not improve cycle stability because with the specific capacity at 140 mAh/g the Na deintercalation during charge is more than 50% Na ions per formula unit of NaCrO 2 which leads to irreversible redox reactions. The insights from this study provide a future direction to enhance the long-term cycle stability of NaCrO 2 through integrating carbon coating and doping.

25 ENERGY STORAGE↗

Search for low-mass electron-recoil dark matter using a single-charge sensitive SuperCDMS-HVeV Detector

We present constraints on low mass dark matter-electron scattering and absorption interactions using a SuperCDMS high-voltage eV-resolution (HVeV) detector. Data were taken underground in the NEXUS facility located at Fermilab with an overburden of 225 meters of water equivalent. The experiment benefits from the minimizing of luminescence from the printed circuit boards in the detector holder used in all previous HVeV studies. A blind analysis of $6.1\,\mathrm{g\cdot days}$ of exposure produces exclusion limits for dark matter-electron scattering cross-sections for masses as low as $1\,\mathrm{MeV}/c^2$, as well as on the photon-dark photon mixing parameter and the coupling constant between axion-like particles and electrons for particles with masses $>1.2\,\mathrm{eV}/c^2$ probed via absorption processes.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

Complete Phase Transformation of Ir Nanowire Network into Defect-Rich Oxide Catalyst for High-Performance PEM Water Electrolysis

Iridium-based catalysts remain the most reliable option for the oxygen evolution reaction (OER) in proton exchange membrane water electrolyzers (PEMWEs). However, their high cost and limited performance represent critical barriers to the commercialization of this green hydrogen production technology. Herein, we report the creation of a metallic Ir nanowire network (IrNWN), which exhibits superior OER performance through its in-situ transition into an oxide structure with high intrinsic activity. At a low loading of 0.25 mgIr/cm2 in PEMWEs, IrNWN achieved a current density of 3.13 A/cm2 at a cell voltage of 1.8 V, outperforming the commercial Ir-based catalyst and surpassing the Department of Energy (DOE) 2026 technical target. Moreover, the high activity of IrNWN was maintained for 900 hours in a durability test at 2 A/cm2, showing a low degradation rate of 0.042 mV/hour. Structural analysis of the electrochemically oxidized IrNWN revealed the presence of mixed Ir oxidation states and a high density of surface terminal oxygen groups (μ1-O), which contributed to a reduced energy barrier for the rate-determining O-O coupling step.

oxygen evolution reaction↗