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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 757 records · Page 42
All sourcesNASA NTRSDOE OSTI
NASA NTRS1987

A study of Schwarz converters for nuclear powered spacecraft

High power space systems which use low dc voltage, high current sources such as thermoelectric generators, will most likely require high voltage conversion for transmission purposes. This study considers the use of the Schwarz resonant converter for use as the basic building block to accomplish this low-to-high voltage conversion for either a dc or an ac spacecraft bus. The Schwarz converter has the important assets of both inherent fault tolerance and resonant operation; parallel operation in modular form is possible. A regulated dc spacecraft bus requires only a single stage converter while a constant frequency ac bus requires a cascaded Schwarz converter configuration. If the power system requires constant output power from the dc generator, then a second converter is required to route unneeded power to a ballast load.

Stuart, Thomas A.↗
DOE OSTI2023

An efficient solution of low-frequency magnetic problems with voltage sources using all-frequency stable formulation

The modeling and simulation of magnetic problems at low frequencies are considered in this paper. When excited with a voltage source, conduction current is induced in the circuit of interest, which generates the magnetic field. This type of problems is modeled using the all-frequency stable formulation, which employs the potential description of fields with an inhomogeneous Coulomb gauge. With the aid of the stable formulation, the low-frequency breakdown problem is circumvented and both electric and magnetic fields can be solved in a single simulation. To solve large magnetic problems efficiently, it is necessary to employ an iterative solver with an efficient preconditioner. In this work, a preconditioner based on the incomplete LU decomposition is constructed and applied in a wide frequency range. Several numerical examples are given to demonstrate the performance of the proposed method.

Mekonnen, Minyechil↗
DOE OSTI2021

Voltage and cathode emission mechanisms of a magnetized, constricted, orbiting plasma in helium 6.7–850 Pa

Abstract We present a semiquantitative description of several important properties of a magnetized cold-cathode plasma in helium over a wide pressure range 6.7–850 Pa. We focus on the ‘constricted orbiting’ mode where the plasma attaches to the cathode as a moving ‘dot’ and the voltage and rate of cathode erosion are both unusually low. We propose that the low plasma voltage and observed motion of the plasma adjacent to the cathode can be attributed to field emission as the source of electrons from the cathode, a process that is aided by the charging of an oxide film by ions. We find that the observed dependence of plasma voltage on pressure is consistent with the assumption that the axial electric field must increase in regions of strong crossed magnetic field to maintain current continuity.

Physics↗
NASA NTRS1982

Testing and failure analysis to improve screening techniques for hermetically sealed metallized film capacitors for low energy applications

Effective screening techniques are evaluated for detecting insulation resistance degradation and failure in hermetically sealed metallized film capacitors used in applications where low capacitor voltage and energy levels are common to the circuitry. A special test and monitoring system capable of rapidly scanning all test capacitors and recording faults and/or failures is examined. Tests include temperature cycling and storage as well as low, medium, and high voltage life tests. Polysulfone film capacitors are more heat stable and reliable than polycarbonate film units.

Source record↗
NASA NTRS2024

Self-Cleaning Coatings for Space or Earth Transparent Electrodynamic Dust Shields Usable for Solar Cells

Reducing dust accumulation on any surface is key for lunar missions as dust can damage or impair the performance of everything from deployable systems to solar cells on the Moon’s surface. Electrodynamic dust shields (EDSs) are a key method to actively clean surfaces by running high voltages (but low currents) through electrodes on the surface. The forces generated by the voltage efficiently remove built up, electrically charged dust particles. Innovators at the NASA Kennedy Space Center have developed a new transparent EDS for removing dust from space and lunar solar cells among other transparent surfaces. The new coatings operate at half the voltage of existing EDSs while being 90% thinner. These capabilities are enabled by an innovative combination of electrode patterning and a thin silica protective layer. The reduced thickness and lower voltage operation expands possibilities for integrating EDSs onto transparent surfaces across industries.

Jerry J Wang↗
NASA NTRS1983

Development and fabrication of a high current, fast recovery power diode

A high voltage (VR = 1200 V), high current (IF = 150 A), fast recovery ( 700 ns) and low forward voltage drop ( 1.5 V) silicon rectifier was designed and the process developed for its fabrication. For maximum purity, uniformity and material characteristic stability, neutron transmutation n-type doped float zone silicon is used. The design features a hexagonal chip for maximum area utilization of space available in the DO-8 diode package, PIN diffused junction structure with deep diffused D(+) anode and a shallow high concentration n(+) cathode. With the high temperature glass passivated positive bevel mesa junction termination, the achieved blocking voltage is close to the theoretical limit of the starting material. Gold diffusion is used to control the lifetime and the resulting effect on switching speed and forward voltage tradeoff. For solder reflow assembly, trimetal (Al-Ti-Ni) contacts are used. The required major device electrical characteristics were achieved. Due to the tradeoff nature of forward voltage drop and reverse recovery time, a compromise was reached for these values.

Berman, A. H.↗
DOE OSTI2022

Approaching theoretical specific capacity of iron-rich lithium iron silicate using graphene-incorporation and fluorine-doping

Lithium iron silicate, Li 2 FeSiO 4 , is a promising cathode material for lithium ion batteries due to its high theoretical specific capacity, earth abundance, low cost, and environmental friendliness. The challenges of Li 2 FeSiO 4 as a practical cathode material are (1) the low electronic and ionic conductivity and (2) the low discharge voltage. The approach of incorporating graphene sheets into the nanostructure of Li 2 FeSiO 4 is used for dealing with the low conductivities while fluorine doping is intended to increase the discharge voltage. The fluorine-doped and graphene-incorporated iron-rich lithium iron silicate F-LFSO/G nanomaterials were successfully synthesized using a facile/efficient hydrothermal method with excellent performance, 328.43 mA h g -1 at 0.1C rate, approaching their theoretical specific capacity, 99% of 331 mA h g -1 . This clearly reveals that the reversible (de)lithiation of 2 Li + ions per F-LFSO has been realized as a result of these approaches. The (de)lithiation process has been studied using in operando high energy synchrotron X-ray absorption near edge spectroscopy and X-ray photoelectron spectroscopy aided by theoretical modeling, which reveals that F doping deeply changes the O electron configuration in F-LFSO, and consequently makes the Li + ion transfer easier, while the reversible redox of oxygen can be utilized to achieve high specific capacity.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

A Smart Silicon Carbide Power Module With Pulse Width Modulation Over Wi-Fi and Wireless Power Transfer-Enabled Gate Driver, Featuring Onboard State of Health Estimator and High-Voltage Scaling Capabilities

A wide range of utility applications require controllable switches with features such as high-voltage blocking and high-current carrying capacity, especially at high pulse width modulation (PWM) frequency. Low- and medium-voltage utility applications such as motor drives and flexible AC transmission systems as well as solid state transformers could also benefit from a low-cost high-voltage switching module. Wide-bandgap semiconductors such as silicon carbide (SiC) and gallium nitride (GaN) metal oxide semiconductor field effect transistors (MOSFETs) are considered to be the present and next-generation device choices, although they have limitations. For relatively high-voltage applications with demanding thermal management, SiC is still the only choice, and GaN dominates the low-voltage regime. This manuscript proposes a new half-bridge power MOSFET module that is suitable for conventional H-bridge of multilevel configurations used in high-voltage applications. Constructed from bare SiC dies, this half-bridge module takes advantage of (1) optimized MOSFET placement inside the module, (2) customized heat exchanger, manifold, and cooling, (3) integrated gate driver module with pulse width modulation (PWM) over wi-fi to eliminate the need for low-voltage signals, (4) wireless power transfer (WPT)-enabled gate driver and other ancillary circuits, (5) and the option to incorporate an onboard state-of-health (SOH) estimator module. The entire architecture has been designed and built at the National Renewable Energy Laboratory (NREL) in Golden, CO.

Ga2O3 devices↗
DOE OSTI2023

Low Threshold, Long Wavelength Interband Cascade Lasers With High Voltage Efficiencies

Here, we report on the substantial advancement of long wavelength InAs-based interband cascade lasers (ICLs) utilizing advanced waveguides formed from hybrid cladding layers and targeting the 10-12 µm wavelength region. Modifications in the hole injector have improved carrier transport in these ICLs, resulting in significantly reduced threshold voltages (V th ) as low as 3.62 V at 80 K. Consequently, much higher voltage efficiencies were observed, peaking at about 73% at 10.3 µm and allowing for large output powers of more than 100 mW/facet. Also, low threshold current densities (J th ) of 8.8 A/cm 2 in cw mode and 7.6 A/cm 2 in pulsed mode near 10 µm were observed; a result of adjustments in the GaInSb hole well composition intended to reduce the overall strain accumulation in the ICL. Furthermore, an ICL from the second wafer operating at a longer wavelength achieved a peak voltage efficiency of 57% at 11.7 µm, with a peak output power of more than 27 mW/facet. This ICL went on to lase beyond 12 µm in both cw and pulsed modes, representing a new milestone in long wavelength coverage for ICLs with the standard W-QW active region.

47 OTHER INSTRUMENTATION↗
NASA NTRS1977

Reconditioning experience at Marshall Space Flight Center

Problems encountered on Skylab prompted the development of a reconditioning circuit which involves a DC to DC converter, a circuit sensing device, and the capability of switching several size reconditioners onto a circuit. Across each cell there is a full bridge rectifier. During battery discharge, if there is low cell voltage, the reconditioning systems holds that voltage up and permits discharge to continue on the system. When the cell is good, the voltage is up about one volt, the diodes are back, or reversed biased, and the current drawn out of the system is very low. The system has a standby power thrown at about one volt. As the voltage drops on a cell, the circuit strts picking up the load and helps hold the overall battery voltage up.

Paschal, L. E.↗
DOE OSTI2023

High-voltage monocrystalline Si photovoltaic minimodules based on poly -Si/SiO x passivating contacts for high-power laser power conversion

By using photovoltaic cells under high-intensity laser illumination, much higher photoconversion efficiencies are obtained than under the solar spectrum. Here we demonstrate a monocrystalline Si based minimodule to convert laser light into electricity using edge-illuminated Si "minicells" based on polysilicon on silicon oxide passivating contacts. Ten fully metallized devices were stacked in series and illuminated from the edge, creating a high-voltage, low-current minimodule that mitigates resistive and Auger-Meitner losses. The minimodule shows a high open-circuit voltage of >5 V when tested under 1-Sun illumination and >7 V at higher illumination intensities when tested with a flash simulator. The fill factor in these minimodules is limited by shunting at low illuminations but reaches a maximum of ~78% for higher illumination intensities >40 Suns (current density >1200 mA/cm 2 ), indicating that the minimodules are not limited by series resistance up to 40 Suns. Under 1000 nm monochromatic light, we measure efficiencies >40% at > 40 Suns equivalent illumination, showing the potential of passivated contact Si cells for laser power conversion.

14 SOLAR ENERGY↗
NASA NTRS2010

Modeling of Sonos Memory Cell Erase Cycle

Silicon-oxide-nitride-oxide-silicon (SONOS) nonvolatile semiconductor memories (NVSMS) have many advantages. These memories are electrically erasable programmable read-only memories (EEPROMs). They utilize low programming voltages, endure extended erase/write cycles, are inherently resistant to radiation, and are compatible with high-density scaled CMOS for low power, portable electronics. The SONOS memory cell erase cycle was investigated using a nonquasi-static (NQS) MOSFET model. The SONOS floating gate charge and voltage, tunneling current, threshold voltage, and drain current were characterized during an erase cycle. Comparisons were made between the model predictions and experimental device data.

Phillips, Thomas A.↗
DOE OSTI2022

Domain wall enabled steep slope switching in MoS2 transistors towards hysteresis-free operation

Abstract The device concept of ferroelectric-based negative capacitance (NC) transistors offers a promising route for achieving energy-efficient logic applications that can outperform the conventional semiconductor technology, while viable operation mechanisms remain a central topic of debate. In this work, we report steep slope switching in MoS 2 transistors back-gated by single-layer polycrystalline PbZr 0.35 Ti 0.65 O 3 . The devices exhibit current switching ratios up to 8 × 10 6 within an ultra-low gate voltage window of $$V_{{{\mathrm{g}}}} = \pm \! 0.5$$ V g = ± 0.5 V and subthreshold swing (SS) as low as 9.7 mV decade −1 at room temperature, transcending the 60 mV decade −1 Boltzmann limit without involving additional dielectric layers. Theoretical modeling reveals the dominant role of the metastable polar states within domain walls in enabling the NC mode, which is corroborated by the relation between SS and domain wall density. Our findings shed light on a hysteresis-free mechanism for NC operation, providing a simple yet effective material strategy for developing low-power 2D nanoelectronics.

36 MATERIALS SCIENCE↗
NASA NTRS1977

A note on the assumption of quasiequilibrium in semiconductor junction devices

It is shown that the quasi-equilibrium theory for p-n junctions, as originally proposed by Shockley (1949), does not apply under conditions involving an application of comparatively low external voltages. A numerical example indicates that the quasi-equilibrium assumption must be discarded as soon as the voltage is increased beyond a certain critical value, although the system may still be in a low-level injection regime. It is currently not known which set of simplifying assumptions may replace the quasi-equilibrium assumptions. Possible analytic simplification relations applicable to moderate or high injection levels can, perhaps, be based on an approach considered by Mari (1968) and Choo (1971, 1972).

Von Roos, O.↗
NASA NTRS1990

Interferometric Fiber-Optic Gyroscope

Integrated three-waveguide directional coupler functions as polarizer and splitter. Designed with transverse electric (TE) polarization in bar state (two coupling lengths) and transverse magnetic (TM) polarization in cross state (one coupling length). Intended for eventual fabrication as in mass-producible integrated optical circuit that provides advantages including low drive voltage, large-bandwidth phase modulation, preservation of polarization in transmission between devices on same substrate, and low cost.

Depaula, Ramon P.↗
NASA NTRS1999

Novel Electric Nucleation Technique for Growing Large Single Crystal in Space

We present, herein, an electrical model for growing crystals without a seed which might not be free of defects and thereby still hinder the growth of a perfect crystal in space. The system is designed to confine nucleation to a single site automatically in an under saturated solution to avoid multiple nucleation. The technique is based on the effect of electrostriction, which is the tendency of a material to become more compressed in the presence of an electric field. The system is designed to create an electrical potential well between two hyperboloid electrodes with applied voltage at low frequency. The induced potential well between the electrodes oscillates at low frequency and attracts the solute and condenses it into the region of maximum field intensity. The alternating voltage prevents molecules with intrinsic charge from being attracted to the electrodes. The continuous presence of the electric field during the duration of the experiment, provides a continuous migration of the molecules toward the trapping site. This will eliminate the creation of a depletion region around the nucleation center and will enhance the crystal growth rate. Aside from the above mentioned advantages, the system is compact, safe to operate, and inexpensive to build.

Abdeldayem, Hossin↗
NASA NTRS2006

Air-bridge and Vertical CNT Switches for High Performance Switching Applications

Carbon nanotubes are attractive for switching applications since electrostatically-actuated CNT switches have low actuation voltages and power requirements, while allowing GHz switching speeds that stem from the inherently high elastic modulus and low mass of the CNT.Our first NEM structure, the air-bridge switch, consists of suspended single-walled nanotubes (SWNTs) that lie above a sputtered Nb base electrode, where contact to the CNTs is made using evaporated Au/Ti. Electrical measurements of these air-bridge devices show well-defined ON and OFF states as a dc bias of a few volts is applied between the CNT and the Nb-base electrode. The CNT air-bridge switches were measured to have switching times down to a few nanoseconds. Our second NEM structure, the vertical CNT switch, consists of nanotubes grown perpendicular to the substrate. Vertical multi-walled nanotubes (MWNTs) are grown directly on a heavily doped Si substrate, from 200 - 300 nm wide, approximately 1 micrometer deep nano-pockets, with Nb metal electrodes to result in the formation of a vertical single-pole-double-throw switch architecture.

nanoelectromechanical systems (NEMS) devices↗
NASA NTRS1986

Bidirectional dc-to-dc Power Converter

Solid-state, series-resonant converter uses high-voltage thyristors. Converter used either to convert high-voltage, low-current dc power to lowvoltage, high current power or reverse. Taking advantage of newly-available high-voltage thyristors to provide better reliability and efficiency than traditional converters that use vacuum tubes as power switches. New converter essentially maintenance free and provides greatly increased mean time between failures. Attractive in industrial applications whether or not bidirectional capability is required.

Griesbach, C. R.↗