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All sourcesNASA NTRSDOE OSTI
DOE OSTI2018

A First-Principle Calculation and de Haas-van Alphen Effect Simulation in Superconductor LaNiC{sub 2}

In this article the electronic structure and de Haas-van Alphen effect of LaNiC{sub 2} have been calculated by using the first-principle calculations. The antisymmetric spin-orbit coupling effect causes splitting estimated to be 62.9 and 27.5 meV in the two bands crossing the Fermi level. Regular translations between spin-up and spin-down states have been observed and calculated in discrete ranges of energy. Spin-orbit coupled Fermi surfaces are derived and the related de Hass-van Alphen effects have been simulated from the ELK-flapw calculations. The unusual disconnections in low-frequency area have been discussed in details. The Fermi surface topology of spin-up (l + 1/2) is very different from that of spin-down (l − 1/2) which is also evident by the proportions of electron-like bands. Finally the relationship between simulation results and Fermi surface details has been discussed.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2013

First-principles study for ferromagnetism of Cu-doped ZnO with carrier doping

We studied the effects on the ferromagnetism of carrier doping in Zn{sub 1-x}Cu{sub x}O with x=0.0277-0.0833 by using the first-principles calculations. The total magnetic moment of Cu is about 1, 2, and 3 {mu}{sub B}/cell at the concentration of 2.77%, 5.55%, and 8.33%, respectively. For Zn{sub 1-x}Cu{sub x}O{sub 1-y}N{sub y}, we obtained the ferromagnetic and half-metallic ground state. The Cu magnetic moment in low Cu concentration is increased by the N-doping. However, for the F-doping it decreases. The ferromagnetism in Cu-doped ZnO is controllable by changing the carrier density. The N 2p states hybridize well with Cu 3d states instead of the O 2p states. Due to the hybridization between N 2p and Cu 3d states, the holes are itinerant with keeping its 3d states. For (Cu,N)-codoped ZnO, it is recognized that the width of 3d states is larger than that of (Cu,F)-codoped ZnO. - Graphical abstract: Considered clean wurtzite ZnO structure, the Cu magnetic moments for Zn{sub 1-x}Cu{sub x}O{sub 1-y}N{sub y} or Zn{sub 1-x}Cu{sub x}O{sub 1-y}F{sub y} of the ferromagnetic state (left), and the charge density difference of Zn{sub 1-x}Cu{sub x}O (x=0.0277) (right). Highlights: Black-Right-Pointing-Pointer The ferromagnetism of Cu-doped ZnO is controllable by N or F carrier density. Black-Right-Pointing-Pointer The Cu magnetic moment in low Cu concentration is increased by hole doping. Black-Right-Pointing-Pointer The N 2p states hybridize well with the Cu 3d states instead of the O 2p states. Black-Right-Pointing-Pointer For (Cu,F)-codoped ZnO, the Cu 3d band is narrower than that for (Cu,N)-codoped ZnO.

36 MATERIALS SCIENCE↗
DOE OSTI2015

The coupling between stability and ion pair formation in magnesium electrolytes from first-principles quantum mechanics and classical molecular dynamics

Here in this work we uncover a novel effect between concentration dependent ion pair formation and anion stability at reducing potentials, e.g., at the metal anode. Through comprehensive calculations using both first-principles as well as well-benchmarked classical molecular dynamics over a matrix of electrolytes, covering solvents and salt anions with a broad range in chemistry, we elucidate systematic correlations between molecular level interactions and composite electrolyte properties, such as electrochemical stability, solvation structure, and dynamics. We find that Mg electrolytes are highly prone to ion pair formation, even at modest concentrations, for a wide range of solvents with different dielectric constants, which have implications for dynamics as well as charge transfer. Specifically, we observe that, at Mg metal potentials, the ion pair undergoes partial reduction at the Mg cation center (Mg 2+ → Mg + ), which competes with the charge transfer mechanism and can activate the anion to render it susceptible to decomposition. Specifically, TFSI exhibits a significant bond weakening while paired with the transient, partially reduced Mg + . In contrast, BH 4 $-$ and BF 4 $-$ are shown to be chemically stable in a reduced ion pair configuration. Furthermore, we observe that higher order glymes as well as DMSO improve the solubility of Mg salts, but only the longer glyme chains reduce the dynamics of the ions in solution. This information provides critical design metrics for future electrolytes as it elucidates a close connection between bulk solvation and cathodic stability as well as the dynamics of the salt.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2017

First-principles study on the electronic, optical and thermodynamic properties of ABO 3 (A = La,Sr, B = Fe,Co) perovskites

The electronic, optical and thermodynamic properties of ABO 3 (A = La,Sr, B = Fe,Co) perovskites are investigated using first-principles calculations. The obtained results indicate that SrCoO 3 and SrFeO 3 are metals, while LaCoO 3 and LaFeO 3 are insulators and all of them exhibit strong hybridization of the Fe/Co-3d and O-2p orbitals. By correlating the energy band structures with the peaks of the imaginary part of the dielectric function, we obtained the origin of each electron excitation to provide information about the active bands for the corresponding optical transitions observed in the experiment. Moreover, the Debye temperatures θ D obtained from the phonon frequencies are comparable to the available data. In conclusion, the thermodynamic properties of the Helmholtz free energy F , entropy S , and constant-volume heat capacity C v are investigated based on the phonon spectra.

01 COAL, LIGNITE, AND PEAT↗
DOE OSTI2013

Formation and annealing behaviors of qubit centers in 4H-SiC from first principles

Inspired by finding that the nitrogen-vacancy center in diamond is a qubit candidate, similar defects in silicon carbide (SiC) have drawn considerable interest. However, the generation and annealing behaviors of these defects remain unclear. Using first-principles calculations, we describe the equilibrium concentrations and annealing mechanisms based on the diffusion of silicon vacancies. The formation energies and energy barriers along different migration paths, which are responsible for the formation rates, stability, and concentrations of these defects, are investigated. The effects on these processes of charge states, annealing temperature, and crystal orientation are also discussed. These theoretical results are expected to be useful in achieving controllable generation of these defects in experiments.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Jump rates for surface diffusion of large molecules from first principles

We apply a recently developed stochastic model for the surface diffusion of large molecules to calculate jump rates for 9,10-dithioanthracene on a Cu(111) surface. The necessary input parameters for the stochastic model are calculated from first principles using density functional theory (DFT). We find that the inclusion of van der Waals corrections to the DFT energies is critical to obtain good agreement with experimental results for the adsorption geometry and energy barrier for diffusion. The predictions for jump rates in our model are in excellent agreement with measured values and show a marked improvement over transition state theory (TST). We find that the jump rate prefactor is reduced by an order of magnitude from the TST estimate due to frictional damping resulting from energy exchange with surface phonons, as well as a rotational mode of the diffusing molecule.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2018

First-principles insights on phase stability of titanium interstitial alloys

Titanium can dissolve unusually high concentrations of interstitial elements such as carbon and nitrogen to form a rich variety of compounds with beneficial structural and functional properties. Here, a first-principles statistical mechanics study was performed to predict phase stability in the Ti-C and Ti-N binaries. Density functional theory calculations were combined with the cluster-expansion approach to determine ground-state carbon-vacancy and nitrogen-vacancy orderings over the octahedral sites of hcp and fcc Ti. A large number of vacancy-ordered rocksalt phases were found to be stable at low temperature. Monte Carlo simulations showed that the ordered rocksalts transform to a disordered rocksalt that can tolerate high vacancy concentrations at intermediate to high temperatures. Clear trends in phase stability, rooted in electronic structure, are revealed upon a comparison of the calculated Ti-C and Ti-N phase diagrams with the Ti-O phase diagrams from a previous study [N. S. H. Gunda et al., Phys. Rev. Mater. 2, 033604 (2018)].

36 MATERIALS SCIENCE↗
DOE OSTI2020

First Principles Modeling of Tritium Trapping in γ-LiAlO 2 Nanovoids

Experimental STEM and APT investigations both indicate the presence of nanovoids in γ-LiAlO 2 pellets. While those nanovoids can affect the diffusion of tritium in pellets, first principles simulations have been conducted to evaluate the potential for tritium trapping by single and double cation and anion vacancies. It was found that tritium trapping allows to recover a significant amount of the formation energy cost of cation vacancy, while the trapping of tritium by anion vacancies further increase the energy cost of forming a vacancy. The simulations also indicated the potential for tritium to be trapped in various forms by forming bonds such as Al—T, O—T or T 2 . These results raise further questions regarding the speciation and dynamics of tritium trapped in nanovoids.

38 RADIATION CHEMISTRY, RADIOCHEMISTRY, AND NUCLEA↗
DOE OSTI2014

Predicted boron-carbide compounds: A first-principles study

By using developed particle swarm optimization algorithm on crystal structural prediction, we have explored the possible crystal structures of B-C system. Their structures, stability, elastic properties, electronic structure, and chemical bonding have been investigated by first-principles calculations with density functional theory. The results show that all the predicted structures are mechanically and dynamically stable. An analysis of calculated enthalpy with pressure indicates that increasing of boron content will increase the stability of boron carbides under low pressure. Moreover, the boron carbides with rich carbon content become more stable under high pressure. The negative formation energy of predicted B{sub 5}C indicates its high stability. The density of states of B{sub 5}C show that it is p-type semiconducting. The calculated theoretical Vickers hardnesses of B-C exceed 40 GPa except B{sub 4}C, BC, and BC{sub 4}, indicating they are potential superhard materials. An analysis of Debye temperature and electronic localization function provides further understanding chemical and physical properties of boron carbide.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2015

Novel phases of lithium-aluminum binaries from first-principles structural search

Intermetallic Li–Al compounds are on the one hand key materials for light-weight engineering, and on the other hand, they have been proposed for high-capacity electrodes for Li batteries. We determine from first-principles the phase diagram of Li–Al binary crystals using the minima hopping structural prediction method. Beside reproducing the experimentally reported phases (LiAl, Li{sub 3}Al{sub 2}, Li{sub 9}Al{sub 4}, LiAl{sub 3}, and Li{sub 2}Al), we unveil a structural variety larger than expected by discovering six unreported binary phases likely to be thermodynamically stable. Finally, we discuss the behavior of the elastic constants and of the electric potential profile of all Li–Al stable compounds as a function of their stoichiometry.

36 MATERIALS SCIENCE↗
DOE OSTI2015

First-principles study on the effect of SiO{sub 2} layers during oxidation of 4H-SiC

The effect of SiO{sub 2} layers during the thermal oxidation of a 4H-SiC(0001) substrate is examined by performing the first-principles total-energy calculations. Although it is expected that a CO molecule is the most preferable product during the oxidation, CO{sub 2} molecules are mainly emitted from the SiC surface at the initial stage of the oxidation. As the oxidation proceeds, CO{sub 2} emission becomes less favorable and CO molecules are emitted from the interface. We conclude that the interface stress due to the lattice constant mismatch between 4H-SiC(0001) and SiO{sub 2} is responsible for the removal of C during the oxidation, resulting in the characteristic electronic property of the interface fabricated by the thermal oxidation.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Review on first-principles study of defect properties of CdTe as a solar cell absorber

CdTe is one of the leading materials for high-efficiency, low-cost, and thin-film solar cells. In this work, we review the recent first-principles study of defect properties of CdTe and present that: (1) When only intrinsic defects are present, p-type doping in CdTe is weak and the hole density is low due to the relatively deep acceptor levels of Cd vacancy. (2) When only intrinsic defects present, the dominant non-radiative recombination center in p-type CdTe is Te-2+/Cd, which limits the carrier lifetime to be around 200 ns. (3) Extrinsic p-type doping in CdTe by replacing Te with group V elements generally will be limited by the formation of AX centers. This could be overcome through a non-equilibrium cooling process and the hole density can achieve 10^17 cm-3. However, the long-term stability will be a challenging issue. (4) Extrinsic p-type doping by replacing Cd with alkaline group I elements is limited by alkaline interstitials and a non-equilibrium cooling process can efficiently enhance the hole density to the order of 10^17 cm-3. (5) Cu and Cl treatments are discussed. In bulk CdTe, Cu can enhance p-type doping, but Cl is found to be unsuitable for this. Both Cu and Cl show segregation at grain boundaries, especially at those with Te-Te wrong bonds. (6) External impurities are usually incorporated by diffusion. Therefore, the diffusion processes in CdTe are investigated. We find that cation interstitial (Nai, Cui) diffusion follows relatively simple diffusion paths, but anion diffusion (Cli, Pi) follows more complicated paths due to the degenerated defect wavefunctions.

14 SOLAR ENERGY↗
DOE OSTI2017

First-principles study on the electronic, optical, and transport properties of monolayer α- and β-GeSe

The extraordinary properties and the novel applications of black phosphorene induce the research interest in the monolayer group-IV monochalcogenides. Here using first-principles calculations, we systematically investigate the electronic, transport, and optical properties of monolayer α- and β-GeSe, revealing a direct band gap of 1.61 eV for monolayer α-GeSe and an indirect band gap of 2.47 eV for monolayer β-GeSe. For monolayer β-GeSe, the electronic/hole transport is anisotropic, with an extremely high electron mobility of 2.93×104cm2/Vs along the armchair direction, comparable to that of black phosphorene. However, for β-GeSe, robust band gaps nearly independent of the applied tensile strain along the armchair direction are observed. Both monolayer α- and β-GeSe exhibit anisotropic optical absorption in the visible spectrum.

36 MATERIALS SCIENCE↗
DOE OSTI2018

First-Principles Study of Intrinsic and Extrinsic Point Defects in Lead-Based Hybrid Perovskites.

Intrinsic and extrinsic defects play a major role in determining solar cell efficiencies of lead halide hybrid perovskite absorbers. Here, we present the results of first-principles computations performed on MAPbBr3 (MA = methylammonium) to study the energetics and defect levels of intrinsic point defects, namely vacancy, self-interstitial and anti-site, and extrinsic Pb-substitution defects. While vacancies are the lowest formation energy intrinsic defects and create shallow transition levels, a number of extrinsic defects can have comparable formation energies under desirable chemical potential conditions. therefore, carrier concentrations may be tunable with these substituents. Further, some extrinsic defects create deeper transition levels which can potentially be exploited to enhance solar cell efficiencies via sub-gap absorption.

density functional theory↗
DOE OSTI2018

First-Principles Calculations of Acoustic and Anharmonic Properties of Ferromagnetic Cu{sub 2}MnZ (Z = Al and In) Heusler Alloys

The acoustic and anharmonic properties of ferromagnetic Cu{sub 2}MnZ (Z = Al and In) Heusler alloys have been investigated by first-principles calculations method. The obtained lattice parameters, magnetic moments, elastic properties are found to be in good agreement with the available experimental values. From the elastic properties, the sound velocities and the related Debye temperatures and minimum thermal conductivities have been obtained for the two alloys. The sound velocities and thermal conductivities of both alloys are found to show significant anisotropy, and the Cu{sub 2}MnAl with small density and large elastic constants has large sound velocities, high Debye temperature, and large thermal conductivities. Also, the effective second-order elastic constants, generalized Grüneisen constants, and nonlinear ultrasonic parameters to characterize anharmonic properties have been studied for the two alloys. These predictions on the acoustic and anharmonic properties can provide a valuable guidance or reference for further related investigations.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2018

Electronic Structures, Magnetic Properties and Half-Metallicity of Heusler Compounds Hf{sub 2}VZ (Z = Ga, In, Tl, Si, Ge, Sn and Pb): First-Principle Calculations

We investigate the electronic structures, magnetic properties and half-metallicity of Heusler compounds Hf{sub 2}VZ (Z = Ga, In, Tl, Si, Ge, Sn and Pb) with Hg{sub 2}CuTi-type structure by using the first-principle calculations based on density-functional theory. It is found that the equilibrium lattice constants of Hf{sub 2}VZ (Z = Ga, In, Tl, Si, Ge, Sn and Pb) compounds are 6.68, 6.88, 6.91, 6.57, 6.63, 6.85 and 6.94 Å, respectively. Hf{sub 2}VZ (Z = Ga, In, Tl, Si and Sn) compounds exhibit half-metallicity at their respective equilibrium lattice constants. Hf{sub 2}VGe and Hf{sub 2}VPb do not exhibit half-metallicity at their equilibrium lattice constants but can present the half-metallicity when the lattice constant decreases to 6.51 and 6.71 Å, respectively. In case of the lattice thermal expansion, the half-metallicity can be kept in the range of 6.30∼ 7.27, 6.36∼ 7.80, 6.46∼ 7.35, 6.00∼ 6.70 and 6.10∼ 6.95 Å (lattice constant) for Hf{sub 2}VZ (Z = Ga, In, Tl, Si and Sn). Under the unaxial strain, the half-metallicity can still be kept for Hf{sub 2}VZ (Z = Ga, In, Tl) when the lattice distortion is up to ± 10% (c/a) and be kept for Hf{sub 2}VZ (Z = Si, Sn) when the lattice distortion is 0.88∼ 1.09, 0.91∼ 1.09 (c/a). For the Hf{sub 2}VZ compounds with half-metallicity, the total magnetic moment is 2 μ{sub B} when Z is the third main group elements and is 1 μ{sub B} when Z is the fourth main group elements. The Hf{sub 2}VZ compounds with half-metallicity obey the Slater-Pauling formula: M{sub t} = 18 − Z{sub t} rule.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

First-Principles Study of Ferroelectric and Optical Properties in Derivatives of Thiourea

Organic ferroelectric materials in the form of molecular crystals are promising alternatives to well-known ferroelectric perovskite oxides due to their structural flexibility, tunability, and ease of processing. First-principles density functional theory calculations combined with group theory analyses are employed in this work to discuss polar nature of a class of derivatives of thiourea: CH 4 N 2 A where A = O, S, Se, and Te. Further, optical properties in the UV range along with thermodynamic and dynamic stability of such materials are also evaluated in the study. We find that CH 4 N 2 Te with bandgap energy of ~3.33 eV shows large spontaneous polarization of P = 10.92 μC/cm 2 . The electronic and optical properties become tunable under strain.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2014

First principles DFT study of dye-sensitized CdS quantum dots

Dye-sensitized quantum dots (QDs) are considered promising candidates for dye-sensitized solar cells. In order to maximize their efficiency, detailed theoretical studies are important. Here, we report a first principles density functional theory (DFT) investigation of experimentally realized dye - sensitized QD / ligand systems, viz., Cd{sub 16}S{sub 16}, capped with acetate molecules and a coumarin dye. The hybrid B3LYP functional and a 6−311+G(d,p)/LANL2dz basis set are used to study the geometric, energetic and electronic properties of these clusters. There is significant structural rearrangement in all the clusters studied - on the surface for the bare QD, and in the positions of the acetate / dye ligands for the ligated QDs. The density of states (DOS) of the bare QD shows states in the band gap, which disappear on surface passivation with the acetate molecules. Interestingly, in the dye-sensitised QD, the HOMO is found to be localized mainly on the dye molecule, while the LUMO is on the QD, as required for photo-induced electron injection from the dye to the QD.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗