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NASA NTRS2003

Long-Term Reliability of High Speed SiGe/Si Heterojunction Bipolar Transistors

Accelerated lifetime tests were performed on double-mesa structure Si/Si0.7Ge0.3/Si npn heterojunction bipolar transistors, grown by molecular beam epitaxy, in the temperature range of 175C-275C. Both single- and multiple finger transistors were tested. The single-finger transistors (with 5x20 micron sq m emitter area) have DC current gains approximately 40-50 and f(sub T) and f(sub MAX) of up to 22 GHz and 25 GHz, respectively. The multiple finger transistors (1.4 micron finger width, 9 emitter fingers with total emitter area of 403 micron sq m) have similar DC current gain but f(sub T) of 50 GHz. It is found that a gradual degradation in these devices is caused by the recombination enhanced impurity diffusion (REID) of boron atoms from the p-type base region and the associated formation of parasitic energy barriers to electron transport from the emitter to collector layers. This REID has been quantitatively modeled and explained, to the first order of approximation, and the agreement with the measured data is good. The mean time to failure (MTTF) of the devices at room temperature is estimated from the extrapolation of the Arrhenius plots of device lifetime versus reciprocal temperature. The results of the reliability tests offer valuable feedback for SiGe heterostructure design in order to improve the long-term reliability of the devices and circuits made with them. Hot electron induced degradation of the base-emitter junction was also observed during the accelerated lifetime testing. In order to improve the HBT reliability endangered by the hot electrons, deuterium sintered techniques have been proposed. The preliminary results from this study show that a deuterium-sintered HBT is, indeed, more resistant to hot-electron induced base-emitter junction degradation. SiGe/Si based amplifier circuits were also subjected to lifetime testing and we extrapolate MTTF is approximately 1.1_10(exp 6) hours at 125iC junction temperature from the circuit lifetime data.

Ponchak, George E.↗

NASA NTRS2004

The Effect of Martian Dust on Radiator Performance

Experiments were performed in which the effective emittance of three types of radiator Coatings was measured as Martian dust simulant was added to the radiator face. The apparatus consisted of multiple radiator coupons on which Carbondale Red Clay dust was deposited. The coupons were powered by electric heaters, using a guard-heating configuration to achieve the accuracy required for acceptable emittance calculations. The apparatus was containing in a vacuum chamber that featured a liquid-nitrogen cooled shroud that simulated the Martian sky temperature. Radiator temperatures ranged from 250 to 350 K with sky temperatures from 185 to 248 K. Results show that as dust was added to the radiator surfaces, the effective emittance of the high - emittance coatings decreased from near 0.9 to a value of about 0.5. A low-emittance control surface, polished aluminum, demonstrated a rise in effective emittance for thin dust layers, and then a decline as the dust layer thickened. This behavior is attributed to the conductive resistance caused by the dust layer.

Hollingsworth, D. Keith↗

DOE OSTI2020

Comparison of passivation properties of plasma-assisted ALD and APCVD deposited Al 2 O 3 with SiN x capping

In this paper, we report on the direct comparison of Al 2 O 3 films deposited by plasma-assisted atomic layer deposition (ALD) and atmospheric pressure chemical vapor deposition (APCVD) techniques on the passivation properties of both bare and boron diffused Si surfaces. It is found that ALD and APCVD deposited Al 2 O 3 layers with SiN x capping have very similar chemical composition, hydrogen concentration at the Al 2 O 3 /Si interface, and interface defect density (D it ), but the ALD film has slightly higher negative fixed charge (Q f ) after a high temperature (~750 °C) contact firing cycle typically used for solar cell fabrication. Both films showed excellent surface recombination velocities of <5 cm/s on planar and textured un-diffused Si wafers, but the ALD films gave 1 to 8 fA/cm 2 lower emitter saturation current densities (J 0e ) on implanted boron emitters with sheet resistance in the range of 90–180 Ω/. This is attributed to the observed slightly higher negative charge-induced field-effect passivation in the ALD films. However, SiN x /Al 2 O 3 /p + /n/n + passivated emitter rear totally diffused (PERT) cell structures fabricated with 110 and 150 Ω/ emitter in this study showed no appreciable difference in cell efficiency. Device analysis and simulations showed that even for >23% high-performance solar cells design, with very low bulk and rear contact recombination, the observed small difference in J 0e has negligible effect on cell efficiency. Furthermore, APCVD Al 2 O 3 passivation of B emitter can produce comparable efficiencies to their counterpart ALD Al 2 O 3 passivated n-type Si solar cells.

14 SOLAR ENERGY↗

DOE OSTI2020

High current density electron emission from an electrodeposited metal nanowire array

High-current electron field emitters are of interest for many applications, but state-of-the-art devices suffer from limitations such as high turn-on macroscopic field, low macroscopic current density, poor emission stability, and short lifetime. Field emitter arrays with a high spatial density of uniform emitters have the potential to address these problems. This work presents the process development, fabrication, and testing of a novel field emitter array. The authors employed electron beam lithography and templated electrodeposition to fabricate a high spatial density array of metallic nanowires, resulting in electron emission with high macroscopic current density (2 A/cm 2 ) and low turn-on macroscopic field (4.35 V/ μ m). Templated electrodeposition of metallic nanowire arrays is a promising method for producing high performance field emitters.

42 ENGINEERING↗

DOE OSTI2023

Modeling and design of III-V heterojunction solar cells for enhanced performance

Heterojunctions can increase the efficiency of solar cell devices relative to homojunctions, but there is a large parameter space with significant tradeoffs that must be considered. Here, we present an experimental and computational study of III-V heterojunction solar cells and show how the emitter doping, emitter band gap, and heteroband offsets impact device efficiency. Efficiency is maximized by pushing the junction depletion region into the wider band gap material while minimizing the effects of heteroband offsets through optimized choice of emitter band gap, emitter electron affinity, and/or emitter doping density. We use these results to guide optimization of devices grown by halide vapor phase epitaxy, achieving 27% efficiency in a GaAs/GaInPAs heterojunction device. We also show that heterojunctions yield proportionally larger efficiency improvements in lower-quality materials. Although the modeling was developed and validated using III-V materials, the results are theoretically applicable to materials systems outside III-Vs.

14 SOLAR ENERGY↗

DOE OSTI2021

Localization of Nonblinking Point Sources Using Higher-Order-Mode Detection and Optical Heterodyning: Developing a Strategy for Extending the Scope of Molecular, Super-resolution Imaging

While the stochastic, “blinking” nature of fluorescent systems has enabled the super-resolution of their localization by the fitting of their point-spread functions (PSFs), this strategy cannot be exploited for similar resolution of “nonblinking” systems, such as those that might be encountered in a coherent Raman experiment. An alternative method for subdiffraction-limited imaging lies in the exploitation of optical heterodyning. For example, if a Gaussian PSF (a TEM00 mode) of a point emitter is displaced with respect to the origin of the optical system, photons in the higher-order TEM modes carry information about that displacement. Information concerning the displacement can be extracted from photons in these higher-order modes. These photons can be collected by optical heterodyning, which exploits the large gain in a detector’s response to an optical signal from an emitter coupled to a local oscillator, which is prepared in the TEM of interest, e.g., TEM10. We have generalized and developed the heterodyning technique to localize point emitters via the detection of higher-order spatial modes. We have developed a theoretical approach to find a practical estimation limit of the localization parameters using a realistic model that accounts for shot noise, background noise, and Gaussian noise. To demonstrate the applicability of the method, we designed experiments in which a laser is a surrogate for one and two point emitters. Using the Fisher information and its accompanying Cramér-Rao lower bound, we demonstrate super-resolution localization in these cases: we show that objects can be localized to roughly 2–3 orders of magnitude of their point-spread function’s size for a given optical system. Finally and most importantly, it is suggested that the results will ultimately be generalizable to multiple emitters and, most importantly, to “nonblinking” molecular systems, which will be essential for broadening the scope of super-resolution measurements beyond the limits of fluorescence-based techniques.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DOE OSTI2026

Single-photon emission from two-dimensional perovskites channeled through low-energy edge states

Two-dimensional perovskites, an emerging family of van der Waals materials with an innate quantum-well structure, exhibit remarkable optical characteristics and compositional tunability. However, their potential as a source for quantum emitters remains unexplored. Here, we investigate low-energy edge states unique to two-dimensional perovskites using comprehensive photoluminescence imaging and spectroscopy, to further leverage them towards uncovering quantum emitters. In contrast to above-bandgap excitation, spatially localized single-photon emitters are realized through sub-bandgap energy excitation at the edges in exfoliated single crystals. Specifically, the sub-bandgap excitation facilitates efficient access to deeply confined states within the bandgap, as charge carriers can channel through low-energy edge states while inhibiting competing processes. Furthermore, we demonstrate single-photon emitters from artificially created edges via strain as well as from two-dimensional perovskites with different quantum-well thicknesses. Our findings provide promising opportunities in the development of two-dimensional quantum emitters, where two-dimensional perovskites may provide added functionalities with versatility in material design, fabrication, and scalability.

Materials for optics↗

DOE OSTI2022

Thermophotovoltaic efficiency of 40%

Thermophotovoltaics (TPVs) convert predominantly infrared wavelength light to electricity via the photovoltaic effect, and can enable approaches to energy storage and conversion that use higher temperature heat sources than the turbines that are ubiquitous in electricity production today. Since the first demonstration of 29% efficient TPVs (Fig. 1a) using an integrated back surface reflector and a tungsten emitter at 2,000°C (ref. 10), TPV fabrication and performance have improved. However, despite predictions that TPV efficiencies can exceed 50%, the demonstrated efficiencies are still only as high as 32%, albeit at much lower temperatures below 1,300 C (refs. 13,14,15). Here we report the fabrication and measurement of TPV cells with efficiencies of more than 40% and experimentally demonstrate the efficiency of high-bandgap tandem TPV cells. The TPV cells are two-junction devices comprising III–V materials with bandgaps between 1.0 and 1.4 eV that are optimized for emitter temperatures of 1,900–2,400°C. The cells exploit the concept of band-edge spectral filtering to obtain high efficiency, using highly reflective back surface reflectors to reject unusable sub-bandgap radiation back to the emitter. A 1.4/1.2 eV device reached a maximum efficiency of (41.1 ± 1)% operating at a power density of 2.39 W cm –2 and an emitter temperature of 2,400°C. A 1.2/1.0 eV device reached a maximum efficiency of (39.3 ± 1)% operating at a power density of 1.8 W cm–2 and an emitter temperature of 2,127°C. These cells can be integrated into a TPV system for thermal energy grid storage to enable dispatchable renewable energy. This creates a pathway for thermal energy grid storage to reach sufficiently high efficiency and sufficiently low cost to enable decarbonization of the electricity grid.

14 SOLAR ENERGY↗

DOE OSTI2021

Single photon sources with near unity collection efficiencies by deterministic placement of quantum dots in nanoantennas

Deterministic coupling between photonic nodes in a quantum network is an essential step toward implementing various quantum technologies. The omnidirectionality of free-standing emitters, however, makes this coupling highly inefficient, in particular if the distant nodes are coupled via low numerical aperture (NA) channels such as optical fibers. This limitation requires placing quantum emitters in nanoantennas that can direct the photons into the channels with very high efficiency. Moreover, to be able to scale such technologies to a large number of channels, the placing of the emitters should be deterministic. In this work, we present a method for directly locating single free-standing quantum emitters with high spatial accuracy at the center of highly directional bullseye metal–dielectric nanoantennas. We further employ non-blinking, high quantum yield colloidal quantum dots for on-demand single-photon emission that is uncompromised by instabilities or non-radiative exciton recombination processes. Taken together, this approach results in a record-high collection efficiency of 85% of the single photons into a low NA of 0.5, setting the stage for efficient coupling between on-chip, room temperature nanoantenna-emitter devices and a fiber or a remote free-space node without the need for additional optics.

36 MATERIALS SCIENCE↗

DOE OSTI2021

Adiabatic matching of particle bunches in a plasma-based accelerator in the presence of ion motion

Witness beam stability and preservation of its ultra-low emittance have been identified as critical challenges toward realizing a TeV-class, plasma-based linear collider. In fact, the witness bunch parameters required by a future TeV-class collider have been expected to trigger hosing instability and background ion motion, leading to emittance degradation and, potentially, to bunch loss. Recently, it has been shown that ion motion suppresses the hosing instability, and proper longitudinal bunch shaping can eliminate the ion-motion-induced emittance growth. Here, we propose and analyze a plasma-based method to generate the shaped bunches that enable emittance preservation in the presence of ion motion. The method is based on an adiabatic matching procedure, where a bunch with an initially untapered profile is injected in the plasma accelerator stage with an energy low enough that ion motion effects are initially small. As the bunch accelerates, it is adiabatically compressed, ion motion is gradually triggered, and the bunch slowly but continuously readjusts itself in the ion motion-perturbed wakefield acquiring the desired taper. The production of tapered witness bunch profiles that minimize energy spread and preserve emittance for collider-relevant parameters could enable the use of plasma-based accelerators for high-energy physics applications.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

DOE OSTI2025

Stochastic frequency fluctuation super-resolution imaging

The inherent non-linearity of intensity correlation functions can be used to spatially distinguish identical emitters beyond the diffraction limit, as achieved, for example, in super-resolution optical fluctuation imaging (SOFI). Here, we propose a complementary concept based on spectral correlation functions, termed spectral fluctuation super-resolution (SFSR) imaging. Through theoretical and computational analysis, we show that spatially resolving time-frequency correlation functions in the image plane can improve the imaging resolution by a factor of $\sqrt2$ in most cases and up to twofold for strictly two emitters. This improvement is achieved by quantifying the degree of correlation in spectral fluctuations across the spatial domain. Experimentally, SFSR can be implemented using a combination of interferometry and photon-correlation measurements. The method works for non-blinking emitters and stochastic spectral fluctuations with arbitrary temporal statistics. This suggests its utility in super-resolution microscopy of quantum emitters at low temperatures, where spectral diffusion is often more pronounced than emitter blinking.

47 OTHER INSTRUMENTATION↗

DOE OSTI2023

Cathode Side-emission Mitigation for Linear Induction Accelerators

Linear induction accelerators (LIAs) are one of the main technologies used in creating flash x-rays used for diagnosing hydrodynamic experiments. The quality of the data produced in these experiments is dependent on the dose of x-rays generated via bremsstrahlung radiation. There are several electron beam quantities that effect the amount of dose extracted from the bremsstrahlung radiation, such as beam instabilities, corkscrew motion, and beam emittance. Injector design is key in delivering well-behaved electron beams to the accelerator, and design choices include components such as anode-cathode (AK) gap dimensions based on required voltage and current, shroud shaping, and cathode type and composition. Thermionic cathodes have shown reliable performance in electron emission, however, if enough of the cathode side is subject to high-enough electric field values, electrons can be emitted. This issue is more likely to happen when the cathode is treated with materials that have lower work functions, which is common for cathodes used in LIAs. These extra electrons can work their way through the rest of the beam, inducing high non-linearities in phase space which can increase the emittance of this beam. In this paper we outline conducted trade-space studies where we examined different shaping parameters of the cathode shroud design to decrease the effect side electrons may have on the beam emittance. Particle trajectories are determined by electric potential contours across the face of the cathode shroud component, and so we hypothesize that the proper shaping of the cathode-shroud interface can tune the electric field to mitigate the effect of side electrons. Electron beam transport is simulated down the length of the injector and the beam quality is diagnosed by studying the emittance as a function of position. Acceptable emittance increase is recorded and noted to meet radiographic requirements.

42 ENGINEERING↗

DOE OSTI2023

Final Cooling with Thick Wedges for a Muon Collider

A muon collider is a particle accelerator that collides muons rather than protons or electrons. An important component of such a collider is cooling, in which the emittance of the muon beam is reduced to make it suitable for use in a collider. In the last stage of this process, called final 4D cooling, emittance in the transverse axes is reduced while emittance in the longitudinal axis is allowed to grow. In previous studies, Final 4-D cooling used absorbers within very high field solenoids to cool low-momentum muons. Simulations of the systems did not reach the desired cooling design goals. In this study, we develop and optimize a different conceptual design for the final 4D cooling channel, which is based on single thick wedges. We used G4Beamline to simulate the channel and Python to generate and analyze particle distributions. We characterized the effects of various parameters on the performance of this system, including the initial emittances and Twiss parameters, the length and angle of the wedges, the length of the drift channel, and the length, frequency, gradient, and phase of the RF cavities. We optimized the design parameters of the cooling channel and produced two conceptual designs (corresponding to two possible starting points for the input beam) which achieve transverse cooling in both x and y by a factor of ≈ 3.5. These channels achieve a lower transverse and longitudinal emittance than the best design previously published.

43 PARTICLE ACCELERATORS↗

DOE OSTI2025

Extreme Longitudinal Compression of Optimized Beams for MEV Ultrafast Electron Diffraction (Final Technical Report)

We worked out the design of a high repetition rate MeV energy ultrafast electron diffraction instrument based on the existing Cornell photoinjector, which can readily be applied to the presented findings. This example is a blueprint of other similarly arranged UED setups. Using particle tracking simulations in conjunction with multiobjective genetic algorithm optimization, we explored the smallest bunch lengths, emittance, and probe spot sizes achievable. As two limits, we defined stroboscopic conditions (with single electrons per pulse) and operation with 10 5 electrons per bunch which may be suitable for single-shot diffraction images. In the stroboscopic case, the flexibility provided by the many cavity bunching and acceleration allows for longitudinal phase space linearization without a higher harmonic field, providing sub-fs bunch lengths at the sample. Given low emittance photoemission conditions, these small bunch lengths can be maintained with probe transverse sizes at the single micron (1 μm) scale and below. In the case of 10 5 electrons per pulse, we simulated state-of-the-art 5D brightness conditions: rms bunch lengths of 10 fs with 3-nm normalized emittances, while permitting repetition rates as high as 1.3 GHz. We showed that in conjunction with collimating apertures, a novel focusing scheme achieves very high-quality emittance compensation for the central core of the beam composing 40% of particles, for a resulting beam size of 5 μm (rms). Finally, to aid in the design of new SRF-based ultrafast electron diffraction machines, we simulated the trade-off between the number of cavities used and achievable bunch length and emittance. In the longitudinal dimension, we made use of the fact that MeV UED requires much lower energy than the 15-MeV maxi mum energy of Cornell’s CBETA injector, and we may therefore use several of the SRF cavities for bunch length compression. In practice, we used a genetic optimization algorithm to choose the phases and amplitudes of the cavities appropriately for optimal bunching. In the zero space charge case, we found that bunching and acceleration are distributed across the six cavities in a way that produces a linearizing effect. And we showed that the ultimate bunch length can be limited by time-of-flight differences arising from transverse size and transverse momentum spread. The space charge code developed and used for this development is now permanent part of the Bmad accelerator simulation code and has already contributed to other developments, e.g., for the EIC electron cooler design.

43 PARTICLE ACCELERATORS↗

DOE OSTI2026

Modeling of a Four-Stage Linear Ionization Cooling Channel for a Muon Collider in g4Beamline

A previous study of an eight-stage rectilinear ionization cooling channel in the ICOOL software demonstrated a five-order-of-magnitude reduction in a muon beam’s 6D emittance. In this study, we look to compare the ways ICOOL and Muons, Inc.’s g4Beamline software model ionization cooling by comparing their modeling of the first four stages of this optimized cooling channel constructed in ICOOL. We begin by identifying the parameters used to construct the optimized ionization cooling channel in ICOOL. We then reconstruct this beam in g4Beamline with identical parameter specifications and simulate the cooling of an identical input beam. Finally, we compare the two simulations based on their beam transmission, longitudinal emittance, and transverse emittance along the channel length. Through this process, we demonstrate that G4Beamline accurately reproduces transverse cooling results but predicts systematically different longitudinal emittance evolution while maintaining similar overall cooling performance, reproducing a 97.9% reduction in 6D emittance over four stages.

Keeler, Dominic [Purdue U., West Lafayette] (ORCID↗

NASA NTRS1972

Development of techniques and associated instrumentation for high temperature emissivity measurements

The progress during the sixth quarterly period is reported on construction and assembly of a test facility to determine the high temperature emittance properties of candidate thermal protection system materials for the space shuttle. This facility will provide simulation of such reentry environment parameters as temperature, pressure, and gas flow rate to permit studies of the effects of these parameters on the emittance stability of the materials. Also reported are the completed results for emittance tests on a set of eight Rene 41 samples and one anodized titanium alloy sample which were tested at temperatures up to 1600 F in vacuum. The data includes calorimetric determinations of total hemispherical emittance, radiometric determinations of total and spectral normal emittance, and pre- and post-test room temperature reflectance measurements.

Cunnington, G. R.↗

NASA NTRS1978

Design considerations for silicon HLE solar cells

The high-low (H-L) junction in the emitter region that defines the high-low-junction emitter (HLE) solar cell suppresses the dark emitter recombination current J sub E so that the base recombination current dominates in determining the open-circuit voltage. For silicon cells this enables the achievement of considerably larger values of open-circuit voltage than those achievable in conventional structures. This paper describes experiments that demonstrate the achievement of J sub E suppression (to less than 5 x 10 to the -14th A/sq cm) and large open-circuit voltage (640 mV) in HLE test cells of two distinct types. In the first type (the diffused HLE structure) impurity diffusion forms the H-L junction in the emitter; in the second type (the oxide-charge-induced HLE structure) the H-L junction is formed in emitter material of relatively low doping concentration by an oxide-charge-induced electron accumulation layer.

Lindholm, F. A.↗

NASA NTRS1983

Spindt cold cathode electron gun development program

A thin film field emission cathode array and an electron gun based on this emitter array are summarized. Fabricating state of the art cathodes for testing at NASA and NRL, advancing the fabrication technology, developing wedge shaped emitters, and performing emission tests are covered. An anistropic dry etching process (reactive ion beam etching) developed that leads to increasing the packing density of the emitter tips to about 5 x 10 to the 6th power/square cm. Tests with small arrays of emitter tips having about 10 tips has demonstrated current densities of over 100 A/sq cm. Several times using cathodes having a packing density of 1.25 x 10 to the 6th power tips/sq cm. Indications are that the higher packing density achievable with the dry etch process may extend this capability to the 500 A/sq cm range and beyond. The wedge emitter geometry was developed and shown to produce emission. This geometry can (in principle) extend the current density capability of the cathodes beyond the 500 A/sq cm level. An emission microscope was built and tested for use with the cathodes.

Spindt, C. A.↗