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At least 757 records · Page 42

All sources NASA NTRS DOE OSTI

NASA NTRS2004

Silicon Carbide Diodes Characterization at High Temperature and Comparison With Silicon Devices

Commercially available silicon carbide (SiC) Schottky diodes from different manufacturers rated at 200, 300, 600, and 1200 V, were electrically tested and characterized as a function of temperature up to 300 C. Electrical tests included both steady state and dynamic tests. Steady state tests produced forward and reverse I-V characteristic curves. Transient tests evaluated the switching performance of the diodes in either a hard-switched DC to DC buck converter or a half-bridge boost converter. For evaluation and comparison purposes, the same tests were performed with current state-of-the-art ultra fast silicon (Si) pn-junction diodes of similar ratings and also a Si Schottky diode. The comparisons made were forward voltage drop at rated current, reverse current at rated voltage, and turn-off peak reverse recovery current and reverse recovery time. In addition, efficiency measurements were taken for the buck DC to DC converter using both the SiC Schottky diodes and the Si pn-junction diodes at different temperatures and frequencies. The test results showed that at high temperature, the forward voltage drop for SiC Schottky diodes is higher than the forward drop of the ultra fast Si pn-junction diodes. As the temperature increased, the forward voltage drop of the SiC Schottky increased while for the ultra fast Si pn-junction diodes, the forward voltage drop decreased as temperature increased. For the elevated temperature steady state reverse voltage tests, the SiC Schottky diodes showed low leakage current at their rated voltage. Likewise, for the transient tests, the SiC Schottky diodes displayed low reverse recovery currents over the range of temperatures tested. Conversely, the Si pn-junction diodes showed increasing peak reverse current values and reverse recovery times with increasing temperature. Efficiency measurements in the DC to DC buck converter showed the advantage of the SiC Schottky diodes over the ultra fast Si pn-junction diodes, especially at the higher temperatures and higher frequencies.

Lebron-Velilla, Ramon C.↗

DOE OSTI2020

Electric field stimulates production of highly conductive microbial OmcZ nanowires

Multifunctional living materials are attractive due to their powerful ability to self-repair and replicate. However, most natural materials lack electronic functionality. Here we show that an electric field, applied to electricity-producing Geobacter sulfurreducens biofilms, stimulates production of cytochrome OmcZ nanowires with 1,000-fold higher conductivity (30 S cm -1 ) and threefold higher stiffness (1.5 GPa) than the cytochrome OmcS nanowires that are important in natural environments. Using chemical imaging-based multimodal nanospectroscopy, we correlate protein structure with function and observe pH-induced conformational switching to β-sheets in individual nanowires, which increases their stiffness and conductivity by 100-fold due to enhanced π-stacking of heme groups; this was further confirmed by computational modeling and bulk spectroscopic studies. These nanowires can transduce mechanical and chemical stimuli into electrical signals to perform sensing, synthesis and energy production. Overall, these findings of biologically produced, highly conductive protein nanowires may help to guide the development of seamless, bidirectional interfaces between biological and electronic systems.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DOE OSTI2024

Assessment of Envelope- and Machine Learning-Based Electrical Fault Type Detection Algorithms for Electrical Distribution Grids

This study introduces envelope- and machine learning (ML)-based electrical fault type detection algorithms for electrical distribution grids, advancing beyond traditional logic-based methods. The proposed detection model involves three stages: anomaly area detection, ML-based fault presence detection, and ML-based fault type detection. Initially, an envelope-based detector identifying the anomaly region was improved to handle noisier power grid signals from meters. The second stage acts as a switch, detecting the presence of a fault among four classes: normal, motor, switching, and fault. Finally, if a fault is detected, the third stage identifies specific fault types. This study explored various feature extraction methods and evaluated different ML algorithms to maximize prediction accuracy. The performance of the proposed algorithms is tested in an emulated software–hardware electrical grid testbed using different sample rate meters/relays, such as SEL735, SEL421, SEL734, SEL700GT, and SEL351S near and far from an inverter-based photovoltaic array farm. The performance outcomes demonstrate the proposed model’s robustness and accuracy under realistic conditions.

24 POWER TRANSMISSION AND DISTRIBUTION↗

DOE OSTI2025

Dopant Optimization of Donors in Semiconductor Opening Switches to Eliminate Prepulse

Semiconductor opening switches are solid-state devices capable of delivering nanosecond, hundreds of kilovolts pulses by interrupting kiloamps of current. The interruption of the current occurs in a moderately doped p-region when a high electric field region (HFR) is formed. The HFR occurs because the reverse pumping current cannot be supported by the saturation velocity and majority carrier concentration of the doping level. However, the donor profile also significantly affects the pulse performance. A secondary prepulse occurs if a secondary HFR is formed at the interface of the background n-doping and N+ doping (X n ) . By moving the location of X n deeper into the diode, the effect of the prepulse is reduced. This article investigates the effect of the donor doping profile on the performance metrics of semiconductor opening switches through technology computer-aided design (TCAD) simulations and experimental results. Through a SILVACO TCAD optimization, we designed a P + /p/n - base/n/N + where the intersection of the moderate p-region and intrinsic n-base region (X p ) is at 160 μm and X n is at 220 μm. This profile is fabricated via silicon epitaxy. Experimentally, it is shown that a deep X n (220 μm) compared with a shallow X n (300 μm) reduces the rise time by >5× . In addition, the magnitude of current density during interruption affects the prepulse foot and pulse shape. At lower current densities without the graded donor profile, high peak voltages are not achieved. Comparing the experimental results to the TCAD simulations shows that the model is predictive under high-current densities in the semiconductor opening switch (SOS) regime.

nanosecond pulse power↗

NASA NTRS1990

Advanced electrical power, distribution and control for the Space Transportation System

High frequency power distribution and management is a technology ready state of development. As such, a system employs the fewest power conversion steps, and employs zero current switching for those steps. It results in the most efficiency, and lowest total parts system count when equivalent systems are compared. The operating voltage and frequency are application specific trade off parameters. However, a 20 kHz Hertz system is suitable for wide range systems.

Hansen, Irving G.↗

DOE OSTI2025

Ferroelectrically switched valley-dependent transmission in SnTe-PbTe-SnTe monolayer lateral heterostructures

A special class of valleytronic two-dimensional (2D) semiconductors possesses carrier pockets (i.e., valleys) along certain directions in the first Brillouin zone, which can be applied as a new degree of freedom for information storage and processing. Here we show that members of this family that are ferroelectric allow the location of these valleys to be switched by rotating the ferroelectric polarization. This makes possible the control of electronic state transmission probability through an energy barrier by ferroelectrically switching the polarization direction, thereby creating or eliminating valley matching in reciprocal space. We apply molecular beam epitaxy to grow lateral sandwich heterostructures with monolayer-thick ferroelectric SnTe separated by nanometer-wide paraelectric PbTe as the barriers. Using scanning tunneling microscopy, we show that the transmission probability of the 2D hole states at the valence band maximum of SnTe monolayer strongly relies on the relative orientation between the polarization directions of the two SnTe electrodes. The transmission can be switched from a suppressed state to a permitted state by rotating the ferroelectric polarization of one SnTe electrode by 90 degrees. Our work demonstrates the electric-field-control of valley locations and its potential for tunnel junction valleytronic devices.

electronic devices↗

DOE OSTI2023

Field orientation dependent magnetic phases in the Weyl semimetal Co 3 ⁢Sn 2 ⁢S 2

Magnetism plays a key role in the emergence of topological phenomena in the Weyl semimetal Co 3 ⁢Sn 2 ⁢S 2 , which exhibits ferromagnetic interactions along the c-axis of the crystal and antiferromagnetic (AFM) interactions within the ab plane. Extensive studies on the temperature dependence of the magnetism with the magnetic field along the c-axis have uncovered a number of magnetic phases. Currently, the nature and origins of the reported magnetic phases are under debate. Here, in this work, we report on magnetic field orientation effects on the magnetism in Co 3 ⁢Sn 2 ⁢S 2 . The shape of the hysteresis loop of the Hall resistance at a fixed temperature is found to change from rectangular to bow tie-like as the magnetic field is tilted from the c-axis toward the ab plane, resembling that reported for magnetic fields along the c-axis as the temperature approaches the Curie temperature from below. Unlike their temperature-dependent counterparts, the newly observed bow tie-like hysteresis loops show exchange bias. Our results showcase the contribution of the in-plane AFM interactions to the magnetism in Co 3 ⁢Sn 2⁢ S 2 and demonstrate a new way to tune its magnetic phases. They also shed light on the temperature-dependent magnetic phases occurring in the magnetic field along the c-axis of the crystal.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

NASA NTRS1995

A fresh view of the fly-by-light/power-by-wire program

NASA has been funding a focused program to promote the development of optical signaling and electrical actuation for civil transports. This program is reviewed in the context of other government and private sector initiatives. It is concluded that significant resources have and continue to be expended to develop these technologies. A second goal of the program is to develop certification methods for aircraft that implement these new technologies. It is concluded that there is a significant need for this effort and that NASA in cooperation with the FAA are well suited to do satisfy the need. Electrical actuation is not new but has recently been made feasible for a broader array of high power applications than previously because of developments in power switching technologies, motors, and computers. This development has been well explored by the Air Force and the private sector and requires little more government attention. Light signal and sensor technology has been developing under public and private funding and has reached a level of maturity such that some companies are using optical signal carriers for flight control on private jets. Several issues remain unresolved but centrally focused government effort is not an effective way to pursue the variety of issues that persist. Certification of aircraft for flight is a government activity. The poor preparedness of the FAA to certify fault tolerant digital flight control systems against electromagnetic effects coupled with the increasing number of electromagnetic emitters constitutes an impediment for development of this technology. The complete lack of preparation to certify optical components is currently causing concern for a general aviation supplier who is having difficulty certify their system. NASA with the FAA should work to develop clear, reasonable, and cost effective ways of certifying the reliability of fault tolerant digital and optical flight control components and systems.

Wander, John↗

NASA NTRS2006

Magnetic-Field-Response Measurement-Acquisition System

A measurement-acquisition system uses magnetic fields to power sensors and to acquire measurements from sensors. The system alleviates many shortcomings of traditional measurement-acquisition systems, which include a finite number of measurement channels, weight penalty associated with wires, use limited to a single type of measurement, wire degradation due to wear or chemical decay, and the logistics needed to add new sensors. Eliminating wiring for acquiring measurements can alleviate potential hazards associated with wires, such as damaged wires becoming ignition sources due to arcing. The sensors are designed as electrically passive inductive-capacitive or passive inductive-capacitive-resistive circuits that produce magnetic-field-responses. One or more electrical parameters (inductance, capacitance, and resistance) of each sensor can be variable and corresponds to a measured physical state of interest. The magnetic-field- response attributes (frequency, amplitude, and bandwidth) of the inductor correspond to the states of physical properties for which each sensor measures. For each sensor, the measurement-acquisition system produces a series of increasing magnetic-field harmonics within a frequency range dedicated to that sensor. For each harmonic, an antenna electrically coupled to an oscillating current (the frequency of which is that of the harmonic) produces an oscillating magnetic field. Faraday induction via the harmonic magnetic fields produces an electromotive force and therefore a current in the sensor. Once electrically active, the sensor produces its own harmonic magnetic field as the inductor stores and releases magnetic energy. The antenna of the measurement- acquisition system is switched from a transmitting to a receiving mode to acquire the magnetic-field response of the sensor. The rectified amplitude of the received response is compared to previous responses to prior transmitted harmonics, to ascertain if the measurement system has detected a response inflection. The "transmit-receive-compare" of sequential harmonics is repeated until the inflection is identified. The harmonic producing the amplitude inflection is the sensor resonant frequency. Resonant frequency and response amplitude are stored and then correlated to calibration data.

Woodward, Stanley E.↗

DOE OSTI2024

Efficient Reformulation and Optimization for SC-ACOPF with Line Switching

This project aims to develop efficient and robust computational methods for solving the security-constrained alternating current optimal power flow problem (SC-ACOPF). The SC-ACOPF problem is a central problem in operating the electric power grids in the United States. It determines the most economically efficient way to operate the generation and transmission system to meet daily electricity demand. The solution found by solving an SC-ACOPF problem must satisfy the physics of the alternating current (AC) power flows, various generator and network operational constraints, and must maintain secure operation under various contingency scenarios, where a generator, a transmission branch, or a transformer may unexpectedly trip offline.

97 MATHEMATICS AND COMPUTING↗

DOE OSTI2026

Optical control of integer and fractional Chern insulators

Optical control of topology, particularly in the presence of electron correlations, is an interesting topic with broad scientific and technological impact. Twisted MoTe 2 bilayer (tMoTe 2 ) is a zero-field fractional Chern insulator (FCI), exhibiting the fractionally quantized anomalous Hall effect. As the chirality of the edge states and sign of the Chern number are determined by the underlying ferromagnetic polarization, manipulation of ferromagnetism would realize control of the Chern insulator (CI)/FCI states. Here, in this work, we demonstrate control of ferromagnetic polarization, and thus the CI and FCI states, by circularly polarized optical pumping in tMoTe 2 . At low excitation power, we achieve on-demand preparation of ferromagnetic polarization by optical training, that is, electrically tuning the system from non-ferromagnetic to desirable ferromagnetic states under helicity-selective optical pumping. With increased excitation power, we further realize direct optical switching of ferromagnetic polarization at a temperature far below the Curie temperature. Both optical training and direct switching are most effective near CI and FCI states, which we attribute to a gap-enhanced valley polarization of optically pumped holes. The magnetization can be dynamically switched by modulating the helicity of optical excitation. Spatially resolved measurements further demonstrate optical writing of ferromagnetic, and thus CI (or FCI) domains. Our work realizes precise optical control of a topological quantum many-body system with potential applications in topological spintronics, quantum memories and creation of exotic edge states by programmable patterning of integer and fractionally quantized anomalous Hall domains.

ferromagnetism↗

DOE OSTI2025

Simultaneously improved reversibility and hydrogen production of solid oxide cells through infiltrating air electrode

Among the various fuel cells, solid oxide cells (SOCs) are the unique type that can principally operate reversibly as either fuel cells to produce electricity or as an electrolyser to split water and produce green hydrogen (H 2 ). Nevertheless, the SOCs' reversibility presents enormous challenges that are manifested by the fast degradation through the cycling between fuel cell and electrolysis mode. While the La 0.8 Sr 0.2 MnO 3 /yttria-stabilized zirconia (LSM/YSZ) air electrode possesses significant advantages in terms of high electrical conductivity and high thermal stability under fuel cell mode, the SOCs with the LSM/YSZ air electrode experience rapid performance degradation with catastrophic electrode delamination shortly after switching from fuel cell to electrolysis mode. To prevent such catastrophic delamination and enable the electrolysis H 2 production, a chemical solution with the designed chemistry of SrFe 2 O 4-d was infiltrated into the LSM/YSZ air electrode. The infiltration immediately mitigates the catastrophic delamination, and the infiltrated cells exhibit significantly improved reversibility upon the electrochemical operation. Nanostructure examination reveals nanoscale cracks and second-phase nanograins formed in the air electrode from the baseline cell. By contrast, no delamination was observed at either the micron or the nanoscale for the infiltrated cell, which is attributed to the increased ion conductivity of the Fe-doped LSM mixed conductor induced by the significant interdiffusion between the LSM backbone and infiltrates. Here, this study presents a viable method for preventing electrode delamination while enhancing the durability of H 2 production and power generation for reversible fuel cell/electrolysis cell operation. It further opens new research directions of modifying the electrochemical activity of the electrode of inherently functional cells through the infiltration of the solutions with different chemistry.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DOE OSTI2020

Effects of filling, strain, and electric field on the Néel vector in antiferromagnetic CrSb

CrSb is a layered antiferromagnet (AFM) with perpendicular magnetic anisotropy, a high Néel temperature, and large spin-orbit coupling (SOC), which makes it interesting for AFM spintronic applications. To elucidate the various mechanisms of Néel vector control, the effects of strain, band filling, and electric field on the magnetic anisotropy energy (MAE) of bulk and thin-film CrSb are determined and analyzed using density functional theory. The MAE of the bulk crystal is large (1.2 meV per unit cell). Due to the significant ionic nature of the Cr-Sb bond, finite slabs are strongly affected by end termination. Truncation of the bulk crystal to a thin film with one surface terminated with Cr and the other surface terminated with Sb breaks inversion symmetry, creates a large charge dipole and average electric field across the film, and breaks spin degeneracy, such that the thin film becomes a ferrimagnet. The MAE is reduced such that its sign can be switched with realistic strain, and the large SOC gives rise to an intrinsic voltage controlled magnetic anisotropy. A slab terminated on both faces with Cr remains a compensated AFM, but with the compensation occurring nonlocally between mirror-symmetric Cr pairs. In-plane alignment of the moments is preferred, the magnitude of the MAE remains large, similar to that of the bulk, and it is relatively insensitive to filling.

36 MATERIALS SCIENCE↗

NASA NTRS1984

Adjustable indicating device for load position

An indicating device designed to provide an electrical signal relative to the position of a load is described. The device has a central housing with two wing structures on each side which support conventional switch means having cantilevered arms. Extending through the housing is a movable shaft that is spring biased to a forward extended position and adapted to respond against a load being positioned. The rear end of the movable shaft has an adjustable cam means which acts upon the cantilevered ams to cause a switching action upon shifting of the movable shaft by a load.

Heller, C.↗

NASA NTRS1993

System for simultaneously loading program to master computer memory devices and corresponding slave computer memory devices

A bus programmable slave module card for use in a computer control system is disclosed which comprises a master computer and one or more slave computer modules interfacing by means of a bus. Each slave module includes its own microprocessor, memory, and control program for acting as a single loop controller. The slave card includes a plurality of memory means (S1, S2...) corresponding to a like plurality of memory devices (C1, C2...) in the master computer, for each slave memory means its own communication lines connectable through the bus with memory communication lines of an associated memory device in the master computer, and a one-way electronic door which is switchable to either a closed condition or a one-way open condition. With the door closed, communication lines between master computer memory (C1, C2...) and slave memory (S1, S2...) are blocked. In the one-way open condition invention, the memory communication lines or each slave memory means (S1, S2...) connect with the memory communication lines of its associated memory device (C1, C2...) in the master computer, and the memory devices (C1, C2...) of the master computer and slave card are electrically parallel such that information seen by the master's memory is also seen by the slave's memory. The slave card is also connectable to a switch for electronically removing the slave microprocessor from the system. With the master computer and the slave card in programming mode relationship, and the slave microprocessor electronically removed from the system, loading a program in the memory devices (C1, C2...) of the master accomplishes a parallel loading into the memory devices (S1, S2...) of the slave.

Hall, William A.↗

NASA NTRS1995

Superconducting Field-Effect Transistors

Devices offer switching speeds greater than semiconducting counterparts. High-Tc superconducting field-effect transistors (SUPEFETs) investigated for use as electronic switches in delay-line-type microwave phase shifters. Resemble semiconductor field-effect transistors in some respects, but their operation based on different principle; namely, electric-field control of transition between superconductivity and normal conductivity.

Bhasin, Kul↗

NASA NTRS1999

Binary Colloidal Alloy Test Conducted on Mir

Colloids are tiny (submicron) particles suspended in fluid. Paint, ink, and milk are examples of colloids found in everyday life. The Binary Colloidal Alloy Test (BCAT) is part of an extensive series of experiments planned to investigate the fundamental properties of colloids so that scientists can make colloids more useful for technological applications. Some of the colloids studied in BCAT are made of two different sized particles (binary colloidal alloys) that are very tiny, uniform plastic spheres. Under the proper conditions, these colloids can arrange themselves in a pattern to form crystals. These crystals may form the basis of new classes of light switches, displays, and optical devices. Windows made of liquid crystals are already in the marketplace. These windows change their appearance from transparent to opaque when a weak electric current is applied. In the future, if the colloidal crystals can be made to control the passage of light through them, such products could be made much more cheaply. These experiments require the microgravity environment of space because good quality crystals are difficult to produce on Earth because of sedimentation and convection in the fluid. The BCAT experiment hardware included two separate modules for two different experiments. The "Slow Growth" hardware consisted of a 35-mm camera with a 250- exposure photo film cartridge. The camera was aimed toward the sample module, which contained 10 separate colloid samples. A rack of small lights provided backlighting for the photographs. The BCAT hardware was launched on the shuttle and was operated aboard the Russian space station Mir by American astronauts John Blaha and David Wolf (launched September 1996 and returned January 1997; reflown September 1997 and returned January 1998). To begin the experiment, one of these astronauts would mix the samples to disperse the colloidal particles and break up any crystals that might have already formed. Once the samples were mixed and the experiment was powered on, the hardware operated autonomously, taking photos of the colloidal samples over a 90-day period.

Hoffmann, Monica I.↗

NASA NTRS2008

Nematic Cells for Digital Light Deflection

Smectic A (SmA) materials can be used in non-mechanical, digital beam deflectors (DBDs) as fillers for passive birefringent prisms based on decoupled pairs of electrically controlled, liquid crystalline polarization rotators, like twisted nematic (TN) cells and passive deflectors. DBDs are used in free-space laser communications, optical fiber communications, optical switches, scanners, and in-situ wavefront correction.

Pishnyak, Oleg↗