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DOE OSTI2024

Tutorial: The equations of electron emission and their evaluation

Electron emission and transport through and over potential barriers is an essential process requiring modeling and simulation to meet the design needs and characterization of an exceedingly broad range of technologically important devices and processes. The simulation and description of thermal, field, and photoemission, and the related concerns of space–charge affected electron flow, often make use of specialized formulations developed in the early days of quantum mechanics. Advancements in the utilization of electron sources and particularly the simulation of devices and applications using advanced particle-in-cell and trajectory methods for beam optics codes create a strong need for a pedagogical account of the emission models to ensure correct numerical evaluation of their equations. This Tutorial starts from simple phenomenological accounts and progressively builds to comprehensive models emphasizing straightforward and often rapid calculation. It recommends formulations to supplant the canonical Richardson–Laue–Dushman (thermal), Fowler–Nordheim (field), Fowler–DuBridge (photo), and Baroody (secondary) equations and provides a useful formulation of space–charge affected flow commonly described by the Child–Langmuir relation that takes into account cathode dependence on surface field.

Physics↗

DOE OSTI2025

Quantitative characterization of ZrO2 gate dielectric interface with tellurium

Tellurium (Te) has recently emerged as a promising p-type semiconductor that can be processed at low temperatures, compatible with back end of line CMOS integration. Characterization of tellurium–dielectric interfaces is essential for further device advancements. Here, the interface quality of Te with ZrO2 gate dielectric is studied in a metal-oxide semiconductor capacitor structure. The interface trap density (Dit) is measured as a function of atomic layer deposition (ALD) temperature, without the use of a seed layer. Given the low thermal budget of Te, the ALD temperature is shown to be particularly important. The lowest Dit of 5 × 1012 states/cm2 eV is obtained at a low ALD process temperature of 120 °C. To further assess the impact of Dit on device performance, field-effect transistors (FETs) were fabricated. The subthreshold swing and effective hole mobility of the FETs were analyzed in relation to Dit, emphasizing the importance of a defect-minimized interface for enhancing Te transistor performance.

Byeon, Kyeong-Jae↗

DOE OSTI2021

Voltage-controlled long-range propagation of indirect excitons in a van der Waals heterostructure

Indirect excitons (IXs), also known as interlayer excitons, can form the medium for excitonic devices whose operation is based on controlled propagation of excitons. Here, a proof of principle for excitonic devices was demonstrated in GaAs heterostructures where the operation of excitonic devices is limited to low temperatures. IXs in van der Waals transition-metal dichalcogenide (TMD) heterostructures are characterized by high binding energies making IXs robust at room temperature and offering an opportunity to create excitonic devices operating at high temperatures suitable for applications. However, a characteristic feature of TMD heterostructures is the presence of moiré superlattice potentials, which are predicted to cause modulations of IX energy reaching tens of meV. These in-plane energy landscapes can lead to IX localization, making IX propagation fundamentally different in TMD and GaAs heterostructures and making uncertain whether long-range IX propagation, sufficiently long to allow for creating elaborate excitonic devices and circuits, can be realized in TMD heterostructures. In this work, we realize long-range IX propagation with the 1/e IX luminescence decay distances reaching 13 microns in a MoSe 2 /WSe 2 heterostructure. We trace the IX luminescence along the IX propagation path. In the presented TMD materials, the long-range IX propagation occurs up to ~50 K. This is a step toward the room temperature operation, which can be realized in TMD heterostructures due to the high IX binding energy. We also realize control of the long-range IX propagation by voltage. The IX luminescence signal in the drain of an excitonic transistor is controlled within 40 times by gate voltage. The control of the IX propagation in the MoSe 2 /WSe 2 heterostructure is governed by new mechanisms, beyond the mechanism for controlling IX transport by an energy barrier to IX propagation (or a trap for IXs) created by the gate electrode, known since the studies of GaAs heterostructures. We discuss the origin of the voltage-controlled long-range IX propagation in the MoSe 2 /WSe 2 heterostructure, in particular, the electric-field control of the moiré potential.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

NASA NTRS1973

Materials sciences research

Research projects involving materials research conducted by various international test facilities are reported. Much of the materials research is classified in the following areas: (1) acousto-optic, acousto-electric, and ultrasonic research, (2) research for elucidating transport phenomena in well characterized oxides, (3) research in semiconductor materials and semiconductor devices, (4) the study of interfaces and interfacial phenomena, and (5) materials research relevant to natural resources. Descriptions of the individual research programs are listed alphabetically by the name of the author and show all personnel involved, resulting publications, and associated meeting speeches.

Source record↗

NASA NTRS1980

Portable device for use in starting air-start-units for aircraft and having cable lead testing capability

A portable device for starting aircraft engines and the like is disclosed. The device includes a lead testing and motor starting circuit characterized by: (1) a direct current voltage source, (2) a pair of terminal plugs connected with the circuit (each being characterized by a first, second, and third terminal) (3) a pair of manually operable switches for connecting the first terminal of each plug of the pair to the positive side of the voltage source, (4) a circuit lead connecting to the second terminal of each plug the negative side of said source, (5) a pair of electrical cables adapted to connect said first and second terminals of each plug to an air-start unit, and means for connecting each cable of the pair of cables between the first terminal of one plug and the third terminal of the other plug of the pair, and (6) a second pair of manually operable switches for selectivity connecting the third terminal of each plug of the pair to the negative side of the voltage source.

Rosier, W. R.↗

NASA NTRS1981

Scriber for silicon wafers

A device for dividing silicon wafers into rectangular chips is characterized by a base including a horizontally oriented bed with a planar support surface, a vacuum chuck adapted to capture a silicon wafer seated on the support for translation in mutually perpendicular directions. A stylus support mounted on the bed includes a shaft disposed above and extended across the bed and a truck mounted on the shaft and supported thereby for linear translation along a path extended across the bed a vertically oriented scribe has a diamond tip supported by the truck also adapted as to engage a silicon wafer captured by the chuck and positioned beneath it in order to form score lines in the surface of the wafer as linear translation is imparted to the truck. A chuck positioning means is mounted on the base and is connected to the chuck for positioning the chuck relative to the stylus.

Yamakawa, K. A.↗

NASA NTRS1983

Semiconductor photoelectrochemistry

Semiconductor photoelectrochemical reactions are investigated. A model of the charge transport processes in the semiconductor, based on semiconductor device theory, is presented. It incorporates the nonlinear processes characterizing the diffusion and reaction of charge carriers in the semiconductor. The model is used to study conditions limiting useful energy conversion, specifically the saturation of current flow due to high light intensity. Numerical results describing charge distributions in the semiconductor and its effects on the electrolyte are obtained. Experimental results include: an estimate rate at which a semiconductor photoelectrode is capable of converting electromagnetic energy into chemical energy; the effect of cell temperature on the efficiency; a method for determining the point of zero zeta potential for macroscopic semiconductor samples; a technique using platinized titanium dioxide powders and ultraviolet radiation to produce chlorine, bromine, and iodine from solutions containing their respective ions; the photoelectrochemical properties of a class of layered compounds called transition metal thiophosphates; and a technique used to produce high conversion efficiency from laser radiation to chemical energy.

Buoncristiani, A. M.↗

NASA NTRS1981

The role of geological surfaces in determining visible-near infra red spectral signatures

The goal of the study described here is to determine new criteria for improved target discrimination in areas of hydrothermal mineralization. It is noted that the portion of materials, that is, geological surfaces detected by sensing devices, must be accurately determined before elemental and mineralogical characterization. The depth from which visible-near infrared radiation is reflected from target surfaces depends on composition and fabric. Reflectance spectra are obtained from binary mixtures of hematite, goethite, kaolinite and montmorillonite with a reflecting sphere spectrometer over a wavelength range of 400-2500 nm. The reflection (or absorption) intensity is plotted vs. the sample thickness (determined by scanning electron microscopy) to determine the sample thickness at which absorption saturates. The optical depth is seen to vary as a function of mineralogy and wavelength. In general, the maximum depth from which reflection features are discerned is from 12 to 47 microns measured in the visible-near infrared spectral region.

Sommer, S. E.↗

NASA NTRS1995

Development of optical diagnostics for performance evaluation of arcjet thrusters

Laser and optical emission-based measurements have been developed and implemented for use on low-power hydrogen arcjet thrusters and xenon-propelled electric thrusters. In the case of low power hydrogen arcjets, these laser induce fluorescence measurements constitute the first complete set of data that characterize the velocity and temperature field of such a device. The research performed under the auspices of this NASA grant includes laser-based measurements of atomic hydrogen velocity and translational temperature, ultraviolet absorption measurements of ground state atomic hydrogen, Raman scattering measurements of the electronic ground state of molecular hydrogen, and optical emission based measurements of electronically excited atomic hydrogen, electron number density, and electron temperature. In addition, we have developed a collisional-radiative model of atomic hydrogen for use in conjunction with magnetohydrodynamic models to predict the plasma radiative spectrum, and near-electrode plasma models to better understand current transfer from the electrodes to the plasma. In the final year of the grant, a new program aimed at developing diagnostics for xenon plasma thrusters was initiated, and results on the use of diode lasers for interrogating Hall accelerator plasmas has been presented at recent conferences.

Cappelli, Mark A.↗

NASA NTRS2018

Optimization of Picosecond Laser Parameters for Surface Treatment of Composites Using a Design of Experiments (DOE) Approach

Based on guidelines from the Federal Aviation Administration, research supported by the NASA Advanced Composites Project is investigating methods to improve process control for surface preparation and pre-bond surface characterization on aerospace composite structures. The overall goal is to identify high fidelity, rapid, and reproducible surface treatments and surface characterization methods to reduce the uncertainty associated with the bonding process. The desired outcome is a more reliable bonded airframe structure, and to reduce time to achieve certification. In this work, a design of experiments (DoE) approach was conducted to determine optimum laser ablation conditions using a pulsed laser source with a nominal pulse width of 10 picoseconds. The laser power, frequency, scan speed, and number of passes (1 or 2) were varied within the laser system operating boundaries. Aerospace structural carbon fiber reinforced composites (Torayca® 3900-2/T800H) were laser treated, then characterized for contamination, and finally bonded for mechanical testing. Pre-bond characterization included water contact angle (WCA) using a handheld device, ablation depth measurement using scanning electron microscopy (SEM), and silicone contamination measurement using laser induced breakdown spectroscopy (LIBS). In order to accommodate the large number of specimens in the DoE, a rapid-screening, double cantilever beam (DCB) test specimen configuration was devised based on modifications to ASTM D5528. Specimens were tested to assess the failure modes observed under the various laser surface treatment parameters. The models obtained from this DoE indicated that results were most sensitive to variation in the average laser power. Excellent bond performance was observed with nearly 100% cohesive failure for a wide range of laser parameters. Below about 200 mW, adhesive failure was observed because contamination was left on the surface. For laser powers greater than about 600 mW, large amounts of fiber were exposed, and the failure mode was predominately fiber tear.

Palmieri, Frank L.↗

DOE OSTI2021

Electro-Optical Measurement Techniques

Utilize the unique characteristics of photons across different regions of the electromagnetic spectrum to probe the optical and electronic properties of chemical systems, materials and devices for energy conversion technologies.

absorption↗

DOE OSTI2024

Radiopaque particle processing additive

A radiopaque processing medium comprising a plurality of radiopaque particles and a non-radiopaque processing medium. The plurality of radiopaque particles is added to the non-radiopaque processing medium to increase a bulk density of the processing medium thereby forming the radiopaque processing medium. The radiopaque processing medium allows excess process media to be located and characterized during X-ray inspection of an electronic device on which the radiopaque processing medium was used. The radiopaque processing medium may also be used to locate and identify flaws/defects of the electronic device based on the location of excess radiopaque processing medium. The radiopaque processing medium may also be used as an underfill material to reinforce electronic chips soldered to the electronic device.

Diamond, Louis↗

DOE OSTI2021

Triton Field Trials Changes in Habitat 360-degree Underwater Videos

This dataset contains the underwater 360-degree video files recorded with a Boxfish 360 camera in La Jolla, CA, near a gravity base anchor of the CalWave xWave wave energy converter in December 2021 over three days, at dawn, noon, and dusk. It was generated to test the ability of using this type of camera mounted on an aluminum frame as a video lander to monitor the artificial reef effect of marine energy devices and associated seafloor structures. The Boxfish 360 is made of 3 cameras each recording its own set of videos. The videos are MOV files that can be viewed individually with any video reader but need to be stitched together to create the 360-degree footage. This dataset contains all the raw video files collected at dawn, noon and dusk on 11/30/2021, 12/01/2021 and 12/02/2021, for about 1h each time. This dataset is associated with the journal manuscript below (linked in resources): Hemery, L.G.; Mackereth, K.F.; Gunn, C.M.; Pablo, E.B. Use of a 360-Degree Underwater Camera to Characterize Artificial Reef and Fish Aggregating Effects around Marine Energy Devices. J. Mar. Sci. Eng. 2022, 10, 555. https://doi.org/10.3390/jmse10050555

16 TIDAL AND WAVE POWER↗

DOE OSTI2023

Theoretical Characterization of Correlated Redox Activity and Nanostructure in Hybrid Supercapacitors

Electrochemical energy storage devices such as supercapacitors, batteries, and fuel cells fundamentally rely on complex and correlated redox processes at electrode/electrolyte interfaces. Furthermore, the nanostructured morphology of high-surface area electrodes can significantly modulate this physics, and further complicates mechanistic understanding. Focusing on supercapacitor devices composed of carbon/polymer based electrodes and organic electrolytes, we will employ first-principles-based computer simulations to understand the coupling of these essential energy storage pathways occurring at the electrode/electrolyte interface. Of critical importance will be the development of theoretical methodologies to allow for the first-principles description of redox processes within electrochemical systems at fixed external voltage. Based on our hypothesis that redox activity and ion structuring is dramatically altered under nanoconfinement, we will then conduct a systematic study utilizing atomistic models of nanoporous carbon electrodes to understand the coupling of redox-activity, energy-storage, and nanostructuring for a variety of electrode morphologies.

25 ENERGY STORAGE↗

NASA NTRS1992

SiC device development for high temperature sensor applications

Progress made in the processing and characterization of 3C-SiC for high temperature sensor applications is reviewed. Piezoresistance properties of silicon carbide and the temperature coefficient of resistivity of n-type beta-SiC are presented. In addition, photoelectrical etching and dopant selective etch-stops in SiC and high temperature Ohmic contacts for n-type beta-SiC sensors are discussed.

Shor, J. S.↗

DOE OSTI2025

Fabrication of 4H-SiC Low Gain Avalanche Detectors (LGADs)

Low gain avalanche detectors (LGADs) offer high temporal resolution for high energy particle detection, which is critical for next generation experiments in hadron colliders. While silicon LGADs (Si-LGADs) have rapidly matured in the last decade, research into silicon carbide (SiC) LGADs has only recently begun. By accounting for fundamental differences in material properties and fabrication processes, we present a prototype device design and process flow for 4H-SiC LGADs with etch-based isolation. Critical steps of the process flow and their results are discussed, including plasma etching, passivation, and the formation of low resistivity contacts. Electrical characterization (I-V, C-V) shows sufficient depletion of the device structure to demonstrate low-gain charge carrier multiplication.

High Energy Physics↗

DOE OSTI2025

Wafer-scale waveguide sidewall roughness scattering loss characterization by image processing

Photonic integrated circuits (PICs) are vital for developing affordable, high-performance optoelectronic devices that can be manufactured at an industrial scale, driving innovation and efficiency in various applications. Optical loss of modes in thin film waveguides and devices is a critical measure of their performance. Thin film growth, lithography, masking, and etching processes are imperfect processes that introduce significant sidewall and top-surface roughness and cause dominating optical losses in waveguides and photonic structures. This roughness, as perturbations couple light from guided to far-field radiation modes, leads to scattering losses that can be estimated from theoretical models. Typically, with UV-based lithography, sidewall roughness is significantly larger than wafer-top surface roughness. Atomic force microscopy (AFM) imaging measurement gives a 3D and high-resolution roughness profile, but the measurement is inconvenient, costly, and unscalable for large-scale PICs and at wafer-scale. Here, we evaluate the sidewall roughness profile based on 2D high-resolution scanning electron microscope (SEM) imaging. We characterized the loss on two homemade nitride and oxide films on 3-inch silicon wafers with 12 waveguide devices on each and correlated the scattering loss estimated from a 2D image-based sidewall profile and theoretical Payne model. The lowest loss of guided fundamental transverse electric (TE 0 ) mode is found at 0.075 dB/cm at 633 nm across 24 devices, a record at visible wavelength. Our work shows 100% success (edge continuity span exceeding 95% of image width/height) in edge detection in image processing of all images to estimate autocorrelation function and optical mode loss. These demonstrations offer valuable insights into waveguide sidewall roughness and a comparison of experimental and 2D SEM image processing based loss estimations with applications in loss characterization at wafer-scale PICs.

Khurana, Mohit (ORCID:0000000207898672)↗

DOE OSTI2024

Fabricated devices for performing bacterial-fungal interaction experiments across scales

Diverse and complex microbiomes are found in virtually every environment on Earth. Bacteria and fungi often co-dominate environmental microbiomes, and there is growing recognition that bacterial-fungal interactions (BFI) have significant impacts on the functioning of their associated microbiomes, environments, and hosts. Investigating BFI in vitro remains a challenge, particularly when attempting to examine interactions at multiple scales of system complexity. Fabricated devices can provide control over both biotic composition and abiotic factors within an experiment to enable the characterization of diverse BFI phenotypes such as modulation of growth rate, production of biomolecules, and alterations to physical movements. Engineered devices ranging from microfluidic chips to simulated rhizosphere systems have been and will continue to be invaluable to BFI research, and it is anticipated that such devices will continue to be developed for diverse applications in the field. This will allow researchers to address specific questions regarding the nature of BFI and how they impact larger microbiome and environmental processes such as biogeochemical cycles, plant productivity, and overall ecosystem resilience. Devices that are currently used for experimental investigations of bacteria, fungi, and BFI are discussed herein along with some of the associated challenges and several recommendations for future device design and applications.

59 BASIC BIOLOGICAL SCIENCES↗