DC response of hot carriers under circularly polarized intense microwave fields and intense magnetic fields in quantum wells
Hot carrier dynamics under intense microwave and crossed magnetic fields are investigated theoretically for the case that the dominant scattering process is inelastic collision, especially intersubband and intrasubband transition in Quantum wells. If the applied electric fields are circularly polarized, the equation of motion forms symmetric on the x-y plane. But the carrier motions are complicated to accumulate because of acceleration and emission process. This situation makes possible to create a variation of the carrier motion, typically the carrier bunching is occurred. This state is a sort of population inversion. The DC response of this system attains strongly negative at appropriate field conditions. Through the simulation for the real case described below, it may include a type of induced emission.