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At least 757 records · Page 42
All sourcesNASA NTRSDOE OSTI
DOE OSTI2017

Bias-dependent local structure of water molecules at a metallic interface

Understanding the local structure of water at the interfaces of metallic electrodes is a key issue in aqueous-based electrochemistry. Nevertheless a realistic simulation of such a setup is challenging, particularly when the electrodes are maintained at different potentials. To correctly compute the effect of an external bias potential applied to truly semi-infinite surfaces, we combine Density Functional Theory (DFT) and Non-Equilibrium Green’s Function (NEGF) methods. This framework allows for the out-of-equilibrium calculation of forces and dynamics, and directly correlates to the chemical potential of the electrodes, which is introduced experimentally. In this work, we apply this methodology to study the electronic properties and atomic forces of a water molecule at the interface of a gold surface. We find that the water molecule tends to align its dipole moment with the electric field, and it is either repelled or attracted to the metal depending on the sign and magnitude of the applied bias, in an asymmetric fashion.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2014

Inverse Marx modulators for self-biasing klystron depressed collectors

A novel pulsed depressed collector biasing scheme is proposed. This topology feeds forward energy recovered during one RF pulse for use on the following RF pulse. The presented ''inverse'' Marx charges biasing capacitors in series, and discharges them in parallel. Simulations are shown along with experimental demonstration on a 62kW klystron.

42 ENGINEERING↗
DOE OSTI2023

The metallicity distribution in the core of the Sagittarius dwarf spheroidal: Minimising the metallicity biases

We present the metallicity and radial velocity for 450 bona fide members of the Sagittarius dwarf spheroidal (Sgr dSph) galaxy, measured from high-resolution spectra (R ≃ 18 000) obtained with FLAMES at the VLT. The targets were carefully selected (a) to sample the core of the main body of Sgr dSph while avoiding contamination from the central stellar nucleus, and (b) to prevent any bias on the metallicity distribution by selecting targets based on their Gaia parallax and proper motions. All the targets selected in this way were confirmed as radial velocity members. We used this sample to derive the first metallicity distribution of the core of Sgr dSph, which is virtually unaffected by metallicity biases. The observed distribution ranges from [Fe/H] ≃ -2.3 to [Fe/H] ≃ 0.0, with a strong, symmetric, and relatively narrow peak around [Fe/H] ≃ -0.5 and a weak and extended metal-poor tail, in which only 13.8 ± 1.9% of the stars have [Fe/H] < -1.0. We confirm previous evidence of correlations between chemical and kinematical properties of stars in the core of Sgr. In our sample, stars with [Fe/H] ≥ -0.6 display a lower velocity dispersion and a higher rotation amplitude than those with [Fe/H] < - 0.6, confirming previous suggestions of disk/halo structure for the progenitor of the system.

79 ASTRONOMY AND ASTROPHYSICS↗
DOE OSTI2023

DESI mock challenge: Halo and galaxy catalogues with the bias assignment method

We present a novel approach to the construction of mock galaxy catalogues for large-scale structure analysis based on the distribution of dark matter halos obtained with effective bias models at the field level. We aim to produce mock galaxy catalogues capable of generating accurate covariance matrices for a number of cosmological probes that are expected to be measured in current and forthcoming galaxy redshift surveys (e.g. two- and three-point statistics). The construction of the catalogues shown in this paper is part of a mock-comparison project within the Dark Energy Spectroscopic Instrument (DESI) collaboration. We use the bias assignment method ( BAM ) to model the statistics of halo distribution through a learning algorithm using a few detailed N-body simulations, and approximated gravity solvers based on Lagrangian perturbation theory. We introduce cosmic-web-dependent corrections to modelling redshift-space distortions at the N-body level – both in the halo and galaxy distributions –, as well as a multi-scale approach for accurate assignment of halo properties. Using specific models of halo occupation distributions to populate halos, we generate galaxy mocks with the expected number density and central-satellite fraction of emission-line galaxies, which are a key target of the DESI experiment. BAM generates mock catalogues with per cent accuracy in a number of summary statistics, such as the abundance, the two- and three-point statistics of halo distributions, both in real and redshift space. In particular, the mock galaxy catalogues display ~3%-10% accuracy in the multipoles of the power spectrum up to scales of k ~ 0.4 h -1 Mpc. We show that covariance matrices of two- and three-point statistics obtained with BAM display a similar structure to the reference simulation. BAM offers an efficient way to produce mock halo catalogues with accurate two- and three-point statistics and is able to generate a variety of multi-tracer catalogues with precise covariance matrices of several cosmological probes. We discuss future developments of the algorithm towards mock production in DESI and other galaxy-redshift surveys.

79 ASTRONOMY AND ASTROPHYSICS↗
DOE OSTI2020

MAPPER – A NOVEL CAPABILITY TO SUPPORT NUCLEAR MODEL VALIDATION AND MAPPING OF BIASES AND UNCERTAINTIES

This paper overviews the initial results of a new project at the Oak Ridge National Laboratory -- supported via an internal seed funding program -- focused on the development of a novel computational capability, called MAPPER, to support model validation. The MAPPER development aims to eliminate the need for empirical criteria, such as similarity indices, often employed to identify applicable experiments for given application conditions. To achieve that, MAPPER employs an information-theoretic-based approach, based on the Kullback-Leibler (KL) divergence principle, to combine responses of available or to-be-built experiments with application responses of interest using a training set of samples generated using randomized execution of the experiments and the application high fidelity analysis models. These samples are condensed using reduced order modeling techniques in the form of a joint probability distribution function (PDF) connecting each application response of interest with a new effective experimental response. The initial focus of the MAPPER capability will be to support the confirmatory analysis required for criticality safety analysis of storage facilities which require k-eff biases to be known for safe operation. This paper reports some of the initial results obtained with MAPPER as applied to a set of critical experiments for which existing similarity-based methods have been shown to provide inaccurate estimates of the biases.

Mertyurek, Ugur↗
DOE OSTI2013

Giant zero field cooled spontaneous exchange bias effect in phase separated La{sub 1.5}Sr{sub 0.5}CoMnO{sub 6}

We report a giant zero field cooled exchange bias (ZEB) effect (∼0.65 T) in La{sub 1.5}Sr{sub 0.5}CoMnO{sub 6} sample. Magnetic study has revealed a reentrant spin glass ∼90 K, phase separation to spin glass and ferromagnetic phases below 50 K and canted antiferromagnetic transition ∼10 K. A small conventional exchange bias (CEB) is established with the advent of spontaneous phase separation down to 10 K. Giant ZEB and enhanced CEB effects are found only below 10 K and are attributed to the large unidirectional anisotropy at the interface of isothermally field induced ferromagnetic phase and canted antiferromagnetic background.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2013

Peak divergence in the curve of magnetoelectric coefficient versus dc bias magnetic field at resonance region for bi-layer magnetostrictive/piezoelectric composites

Magnetoelectric (ME) coefficient dependence on the bias magnetic field at resonance frequencies for the bi-layered bonded Terfenol-D/Pb(Zr,Ti)O{sub 3} composite was investigated. The resonance frequency decreases first and then increases with the bias magnetic field (H{sub DC}), showing a “V” shape in the range of 0 ∼ 5 kOe. Below the resonance frequency, the pattern of ME coefficient dependence on the H{sub DC} shows a single peak, but splits into a double-peak pattern when the testing frequency increases into a certain region. With increasing the frequency, a divergent evolution of the H{sub DC} patterns was observed. Domain motion and ΔE effect combined with magnetostriction-piezoelectric coupling effect were employed to explain this experimental result.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Enhancement of exchange bias and training effect in ion-beam sputtered Fe{sub 46}Mn{sub 54}/Ni{sub 81}Fe{sub 19} bilayers

We present a remarkable enhancement by 300% of the exchange-bias field at room temperature, without affecting the coercivity value, via optimum magnetic annealing (250 °C/3 kOe) in ion-beam sputtered FeMn(30 nm)/NiFe(10 nm) bilayers. This specific behavior has been attributed to a higher degree of γ-FeMn(111) orientation that offers more interfacial FeMn moments to get pinned with the moments of the adjacent NiFe layer. Unlike the absence of training effect at room temperature, a pronounced training effect and an accompanying magnetization reversal asymmetry are evidenced upon field cooling below 50 K due to the presence of biaxial exchange induced anisotropy across the interdiffused FeMn/NiFe interface. The present findings not only have technological significance but also are of relevance to the understanding of interfacial spin disorder and frustration in these exchange-biased systems.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Direct observation of bias-dependence potential distribution in metal/HfO{sub 2} gate stack structures by hard x-ray photoelectron spectroscopy under device operation

Although gate stack structures with high-k materials have been extensively investigated, there are some issues to be solved for the formation of high quality gate stack structures. In the present study, we employed hard x-ray photoelectron spectroscopy in operating devices. This method allows us to investigate bias dependent electronic states, while keeping device structures intact. Using this method, we have investigated electronic states and potential distribution in gate metal/HfO{sub 2} gate stack structures under device operation. Analysis of the core levels shifts as a function of the bias voltage indicated that a potential drop occurred at the Pt/HfO{sub 2} interface for a Pt/HfO{sub 2} gate structure, while a potential gradient was not observed at the Ru/HfO{sub 2} interface for a Ru/HfO{sub 2} gate structure. Angle resolved photoelectron spectroscopy revealed that a thicker SiO{sub 2} layer was formed at the Pt/HfO{sub 2} interface, indicating that the origin of potential drop at Pt/HfO{sub 2} interface is formation of the thick SiO{sub 2} layer at the interface. The formation of the thick SiO{sub 2} layer at the metal/high-k interface might concern the Fermi level pinning, which is observed in metal/high-k gate stack structures.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

On bias of kinetic temperature measurements in complex plasmas

The kinetic temperature in complex plasmas is often measured using particle tracking velocimetry. Here, we introduce a criterion which minimizes the probability of faulty tracking of particles with normally distributed random displacements in consecutive frames. Faulty particle tracking results in a measurement bias of the deduced velocity distribution function and hence the deduced kinetic temperature. For particles with a normal velocity distribution function, mistracking biases the obtained velocity distribution function towards small velocities at the expense of large velocities, i.e., the inferred velocity distribution is more peaked and its tail is less pronounced. The kinetic temperature is therefore systematically underestimated in measurements. We give a prescription to mitigate this type of error.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2014

Calculation of ultrasonic fields radiated in a ferromagnetic medium by an EMAT of arbitrary bias field driven by a current of arbitrary intensity

ElectroMagnetic Acoustic Transducers (EMATs) are contactless transducers generating ultrasonic waves in conductive media, notably shear horizontal and torsional waves (in plates and pipes, respectively), possibly in hostile environments. In a ferromagnetic part, the elastic strain and the magnetic field couple through magnetostriction phenomena, so that a magnetostriction and magnetization forces add up to the Lorentz force created in any conductive medium. Here, a model is proposed to predict these forces for an arbitrary bias field due to the EMAT permanent magnet and whatever the current intensity in its electric circuit, whereas the usual assumption of high bias field and low intensity current leads to important model simplifications. To handle the nonlinear behavior of all the three forces when the usual assumption cannot be made, forces are expressed in the time domain. In particular, magnetostriction force generates waves at several harmonic frequencies of the driving current frequency. Forces are then transformed into equivalent surface stresses readily usable as source terms in existing models of ultrasonic radiation, under the assumption that ultrasonic wavelengths are much longer than force penetration depths, (which is generally true in NDT applications of EMATs). Force spectra computed in various EMAT configurations are compared for illustration.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

Interfacial spin cluster effects in exchange bias systems

In this work, the effect of exchange bias on the hysteresis loop of CoFe is observed. The evolution of the coercivities and the shift of the hysteresis loop during the annealing process has been measured for films deposited on NiCr and Cu seed layers. Through comparison of the as deposited and field annealed loops, it is clear that for an exchange biased material, the two coercivities are due to different reversal processes. This behaviour is attributed to spin clusters at the ferromagnet/antiferromagnet interface, which behave in a similar manner to a fine particle system.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Optimization of exchange bias in Co{sub 2}FeAl{sub 0.5}Si{sub 0.5} Heusler alloy layers

We have fabricated and investigated IrMn{sub 3}/Co{sub 2}FeAl{sub 0.5}Si{sub 0.5} stacks to meet the criteria for future spintronic device applications which requires low-temperature crystallisation (<250 °C) and a large exchange bias H{sub ex} (>500 Oe). Such a system would form the pinned layer in spin-valve or tunnel junction applications. We have demonstrated that annealing at 300 °C which can achieve crystalline ordering in the Co{sub 2}FeAl{sub 0.5}Si{sub 0.5} layer giving ∼80% of the predicted saturation magnetisation. We have also induced an exchange bias of ∼240 Oe at the interface. These values are close to the above criteria and confirm the potential of using antiferromagnet/Heusler-alloy stacks in current Si-based processes.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Defect generation in amorphous-indium-gallium-zinc-oxide thin-film transistors by positive bias stress at elevated temperature

We report on the generation and characterization of a hump in the transfer characteristics of amorphous indium gallium zinc-oxide thin-film transistors by positive bias temperature stress. The hump depends strongly on the gate bias stress at 100 °C. Due to the hump, the positive shift of the transfer characteristic in deep depletion is always smaller that in accumulation. Since, the latter shift is twice the former, with very good correlation, we conclude that the effect is due to creation of a double acceptor, likely to be a cation vacancy. Our results indicate that these defects are located near the gate insulator/active layer interface, rather than in the bulk. Migration of donor defects from the interface towards the bulk may also occur under PBST at 100 °C.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Large exchange bias enhancement in (Pt(or Pd)/Co)/IrMn/Co trilayers with ultrathin IrMn thanks to interfacial Cu dusting

The magnitude of exchange bias (H{sub ex}) at room temperature can be significantly enhanced in IrMn/Co and (Pt(or Pd)/Co)/IrMn/Co structures thanks to the insertion of an ultrathin Cu dusting layer at the IrMn/Co interface. The combination of trilayer structure and interfacial Cu dusting leads to a three-fold increase in H{sub ex} as compared to the conventional IrMn/Co bilayer structure, with an increased blocking temperature (T{sub B}) and a concave curvature of the temperature dependence H{sub ex}(T), ideal for improved Thermally Assisted-Magnetic Random Access Memory storage layer. This exchange bias enhancement is ascribed to a reduction of the spin frustration at the IrMn/Co interface thanks to interfacial Cu addition.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Deposition and characterization of zirconium nitride (ZrN) thin films by reactive magnetron sputtering with linear gas ion source and bias voltage

Zirconium nitride thin films have been prepared on stainless steel substrate (304L grade) by reactive cylindrical magnetron sputtering method with Gas Ion Source (GIS) and bias voltage using optimized coating parameters. The structure and surface morphologies of the ZrN films were characterized using X-ray diffraction, atomic microscopy and scanning electron microscopy. The adhesion property of ZrN thin film has been increased due to the GIS. The coating exhibits better adhesion strength up to 10 N whereas the ZrN thin film with bias voltage exhibits adhesion up to 500 mN.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Enhanced photovoltaic performance of nanocrystalline CdTe/ZnO solar cells using sol-gel ZnO and positive bias treatment

The effect of doping and porosity of the n-type ZnO layer on the performance of solution-processed, sintered p-CdTe/n-ZnO nanocrystal photovoltaic (PV) devices is investigated. Amorphous sol-gel ZnO is found to be the best candidate with overall energy conversion efficiencies above 8% obtained if the ZnO is also indium doped. We demonstrate that when such PV devices are left under forward bias (in dark or light), the device efficiency values are raised to at least 9.8%, due to a substantially increased open-circuit voltage and fill-factor. This drastic enhancement is attributed to improved band alignment at the ITO/CdTe interface. The forward-bias treatment is slowly reversed over a period of days to weeks on standing under open circuit conditions, but is readily restored with further voltage treatment. The moderate processing conditions and high efficiency of such devices demonstrate that nanocrystal-based systems are a promising technology for photovoltaics.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Fast growth of ultrananocrystalline diamond films by bias-enhanced nucleation and growth process in CH{sub 4}/Ar plasma

This letter describes the fast growth of ultrananocrystalline diamond (UNCD) films by bias-enhanced nucleation and growth process in CH{sub 4}/Ar plasma. The UNCD grains were formed at the beginning of the film's growth without the necessity of forming the amorphous carbon interlayer, reaching a thickness of ∼380 nm in 10 min. Transmission electron microscopic investigations revealed that the application of bias voltage induced the formation of graphitic phase both in the interior and at the interface regions of UNCD films that formed interconnected paths, facilitating the transport of electrons and resulting in enhanced electron field emission properties.

36 MATERIALS SCIENCE↗