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At least 757 records · Page 42

The SMART MIL-STD-1553 bus adapter hardware manual

The SMART Multiplexer Interface Adapter, (SMIA) a complete system interface for message structure of the MIL-STD-1553, is described. It provides buffering and storage for transmitted and received data and handles all the necessary handshaking to interface between parallel 8-bit data bus and a MIL-STD serial bit stream. The bus adapter is configured as either a bus controller of a remote terminal interface. It is coupled directly to the multiplex bus, or stub coupled through an additional isolation transformer located at the connection point. Fault isolation resistors provide short circuit protection.

Ton, T. T.↗

Comparative radiation testing of solar cells for the shuttle power extension package

The Power Extension Package (PEP) is the prime focus of a development program to produce low cost solar cells. The PEP is a 32 kilowatt flexible substrate, retrievable, solar array system for use on the Space Shuttle. Solar cell cost will be reduced by increasing cell area and simplifying cell and coverglass fabrication processes and specifications. The cost goal is to produce cells below $30 per watt. Two and ten ohm-cm silicon cells were investigated. This paper describes a unique radiation damage test and side-by-side comparison of candidate cell types with pre-and post-irradiation airplane calibration of outer space short-circuit current.

Baraona, C. R.↗

Low cost solar array project production process and equipment task: A Module Experimental Process System Development Unit (MEPSDU)

Several major modifications were made to the design presented at the PDR. The frame was deleted in favor of a "frameless" design which will provide a substantially improved cell packing factor. Potential shaded cell damage resulting from operation into a short circuit can be eliminated by a change in the cell series/parallel electrical interconnect configuration. The baseline process sequence defined for the MEPSON was refined and equipment design and specification work was completed. SAMICS cost analysis work accelerated, format A's were prepared and computer simulations completed. Design work on the automated cell interconnect station was focused on bond technique selection experiments.

Source record↗

The properties of polycrystalline silicon solar cells with controlled titanium additions

By coupling the results of electrical measurements, such as spectral response, lighted and dark I-V determinations, and deep-level-transient spectroscopy with optical and laser scan photomicroscopy, the effects of grain boundaries and impurities on silicon solar cells were evaluated. Titanium, which produces two deep levels in silicon, degrades cell performance by reducing bulk lifetime and thus cell short-circuit current. Electrically active grain boundaries induce carrier recombination in the bulk and depletion regions of the solar cell. Experimental data imply a small but measurable segregation of titanium into some grain boundaries of the polycrystalline silicon containing high Ti concentration. However, for the titanium-contaminated polycrystalline material used in this study, solar cell performance is dominated by the electrically active titanium concentration in the grains. Microstructural impacts on the devices are of secondary importance

Rohatgi, A.↗

The spectral irradiance of some solar simulators and its effect on cell measurements

Moderate resolution spectral irradiance measurements in the range 300 nm to 1100 nm have been made of eight radiant sources which are currently being used as solar simulators. Spectral irradiance data are presented in graphical form. To demonstrate the interplay of source spectral distribution and cell spectral response, measurements of short circuit current of five cells of differing response characteristics have been made with these sources. These results are presented in tabular and graphical form.

Seaman, C. H.↗

Summary results of the ATS-6 solar cell flight experiment

Synchronous orbit performance data are analyzed for solar cells of 13 different configurations involved in the ATS-6 solar cell radiation damage experiment. It is found that the cells generally performed as expected through 6 to 9 months in orbit, but that after 2-1/3 years were more severely degraded in current than expected. An anomalous additional degradation of 5-9% in short circuit current has been observed for some cells.

Goldhammer, L. J.↗

High temperature properties of GaAlAs/GaAs heteroface solar cells

The properties of p-GaAlAs/p-GaAs/n-GaAs heteroface solar cells were determined in the temperature range from 25 C to 350 C. Illumination air mass zero (AM0) current-voltage measurements show that the short circuit current increases as a function of temperature up to 210 C and then decreases up to 350 C. The open circuit voltage and fill factor decrease linearly with increasing temperature. The spectral response shifts toward higher wavelengths with increasing temperature.

Walker, G. H.↗

Voltage Regulator for a dc-to-dc Converter

New voltage regulator isolates signals from power-switching converter without use of complex circuitry or optical couplers. Only addition is extra secondary winding on existing interstage transformer. Error signals shortcircuit new winding and inhibit converter action. Resistor in series with primary winding limits short-circuit current to prevent damage to circuit components. Extra transformer winding eliminates need for isolation components.

Mclyman, C. W.↗

Solar cell development for the power extension package

The PEP is a 32 kilowatt flexible substrate, retrievable, solar array system for use on the Space Shuttle. Solar cell costs will be reduced by increasing cell area and simplifying cell and coverglass fabrication processes and specifications. The cost goal is to produce cells below $30 per watt. Two and ten ohm-cm silicon cells were investigated. In phase I of the cell development program a few thousand candidate cells will be produced and evaluated for utility and quality. In phase II a large number of cells will be fabricated to verify production readiness and cell yields and costs. This schedule is compatible with PEP initial operational capability in 1984. Approximately 140,000 large area (5.9 x 5.9 cm) cells will be required for two PEP solar arrays. The status of the cell development and testing, including a radiation damage test and side-by-side comparison of candidate cell types with pre- and post-irradiation airplane calibration of outer space short-circuit current, is reported.

Baraona, C. R.↗

Stuffed MO layer as a diffusion barrier in metallizations for high temperature electronics

Auger electron spectroscopy was employed to characterize the diffusion barrier properties of molybdenum in the CrSi2/Mo/Au metallization system. The barrier action of Mo was demonstrated to persist even after 2000 hours annealing time at 300 C in a nitrogen ambient. At 340 C annealing temperature, however, rapid interdiffusion was observed to have occurred between the various metal layers after only 261 hours. The presence of controlled amounts of oxygen in the Mo layer is believed to be responsible for suppressing the short circuit interdiffusion between the thin film layers. Above 340 C, its is believed that the increase in the oxygen mobility led to deterioration of its stuffing action, resulting in the rapid interdiffusion of the thin film layers along grain boundaries.

Boah, J. K.↗

Recent test results on lithium BCX cells

Texts included: short circuit analysis, voltage reversal, high temperature exposure, parallel loading sharing, capacity tests, shock and vibration tests, and assembly tests. Both the AA and D cell configurations were tested. Certification of the cells is discussed and applications are highlighted.

Bragg, B. J.↗

Navy position on lithium safety

The Navy's position on safety of lithium batteries is discussed. Testing includes: short circuit with all fuses bypassed; forced discharge at the fuse value; and a modified incineration test.

Bis, F.↗

A simple model of proton damage in GaAs solar cells

A simple proton damage model for GaAs solar cells is derived and compared to experimental values of change in short circuit currents. The recombination cross section associated with the defects was determined from the experimental comparison to be approximately 1.2 x 10 to the -13th power sq cm in fair agreement with values determined from the deep level transient spectroscopy technique.

Wilson, J. W.↗

Solar cell development for the Power Extension Package

The Power Extension Package (PEP), a 32-kilowatt, flexible-substrate, retrievable solar array system for use on the Space Shuttle, is described. It is noted that solar cell costs will be reduced by increasing cell area and simplifying cell and coverglass fabrication processes and specifications. The tests that have been carried out on the cells are described, among them a unique radiation damage test and a side-by-side comparison of candidate cell types with pre- and post-irradiation airplane calibration of outer space short-circuit current

Baraona, C. R.↗

Thermal stability of GaAs heteroface solar cells with differing contact materials

GaAlAs/GaAs heteroface solar cells used in space offer advantages of higher operating temperatures and recovery from radiation damage using thermal annealing. Elevated temperature experiments were conducted to evaluate the electrical stability of cells with different contact materials. These experiments indicate that for operation of GaAs heteroface solar cells at elevated temperatures, front contact metals must be carefully chosen. The short circuit current varied by only about 3% for cells with Pd/Ag contacts that were heated to 240 C for a total of 500 hours. However, a total decrease in the open circuit voltage of about 20% was observed for these cells. After heating cells to 400 C, large changes in open circuit voltage were observed for cells with Pd/Ag, Pd/Au, Pd, Ag, and Ti contacts; however, preliminary results indicate more stable open circuit voltages for cells with Au, Cr, Zn, and Cr/Au contacts.

Friesen, W. J.↗

Photovoltaic investigation of minority carrier lifetime in the heavily-doped emitter layer of silicon junction solar cell

The results of experiments on the recombination lifetime in a phosphorus diffused N(+) layer of a silicon solar cell are reported. The cells studied comprised three groups of Czochralski grown crystals: boron doped to one ohm-cm, boron doped to 6 ohm-cm, and aluminum doped to one ohm-cm, all with a shunt resistance exceeding 500 kilo-ohms. The characteristic bulk diffusion length of a cell sample was determined from the short circuit current response to light at a wavelength of one micron. The recombination rates were obtained by measurement of the open circuit voltage as a function of the photogeneration rate. The recombination rate was found to be dependent on the photoinjection level, and is positive-field controlled at low photoinjection, positive-field influence Auger recombination at a medium photoinjection level, and negative-field controlled Auger recombination at a high photoinjection level.

Ho, C.-T.↗

Evaluation of silicon-on-ceramic material for low-cost solar cells

The silicon-on-ceramic (SOC) process produces thin layers of silicon on inexpensive ceramic substrates. The layers are produced by unidirectional solidification of molten silicon, and are polycrystalline. Solar cells made from SOC material have performed with a conversion efficiency of 10.5%. In connection with the objective to improve the efficiency of SOC solar cells, an investigation was conducted to assess the relative importance of grain boundaries and impurities. In order to separate the two effects, light-beam-induced current (LBIC) measurements of the short-circuit current were made using a micron-sized light beam from a monochromator. The LBIC measurements are closely related to solar cell performance since the technique identifies the various spatial and spectral contributions to solar cell current. On the basis of the obtained results, it appears that structural defects are more important than chemical defects in limiting the performance of present SOC solar cells.

Zook, J. D.↗

A thermochemical model of radiation damage and annealing applied to GaAs solar cells

Calculations of the equilibrium conditions for continuous radiation damage and thermal annealing are reported. The calculations are based on a thermochemical model developed to analyze the incorporation of point imperfections in GaAs, and modified by introducing the radiation to produce native lattice defects rather than high-temperature and arsenic atmospheric pressure. The concentration of a set of defects, including vacancies, divacancies, and impurity vacancy complexes, are calculated as a function of temperature. Minority carrier lifetimes, short circuit current, and efficiency are deduced for a range of equilibrium temperatures. The results indicate that GaAs solar cells could have a mission life which is not greatly limited by radiation damage.

Conway, E. J.↗