SEARCH · Engineering Papers

Results for “SI”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

SourceResearch connectionFrom yearThrough year

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 757 records · Page 42

All sources NASA NTRS DOE OSTI

NASA NTRS1994

A monolithic Si bolometer array for the Caltech Submillimeter Observatory

We are developing a submillimeter continuum camera for the Caltech Submillimeter Observatory (CSO) located on Mauna Kea. The camera will employ a monolithic Si bolometer array which was developed by Moseley et al. at the NASA Goddard Space Flight Center (GSFC). The camera will be cooled to a temperature of about 300 mK in a He-3 cryostat, and will operate primarily at wavelengths of 350 and 450 micrometers. We plan to use a bolometer array with 1x24 directly illuminated pixels, each pixel of dimension 1x2 sq mm, which is about half of the F/4 beam size at these wavelengths. Each pixel is 10 to 12 micrometers thick and is supported only by four thin Si legs formed by wet chemical etch. The pixels are doped n-type by phosphorus implantation, compensated by boron implantation. Signals from the bolometer pixels are first amplified by cryogenically cooled FET's. The signals are further amplified by room-temperature amplifiers and then separately digitized by 16 bit A/D converters with differential inputs. The outputs of the A/D converters are fed into a digital signal processing board via fiber-optic cables. The electronics and data acquisition system were designed by the Goddard group. We will report the status of this effort.

Wang, Ning↗

NASA NTRS1995

Photospheric, circumstellar, and interstellar features of HE, C, N. O, and Si in the HST spectra of four hot white dwarf stars

This paper reports on the observations of four hot white dwarf stars with the spectrographs on the Hubble Space Telescope (HST). The higher resolving power and higher signal/noise, in comparison with IUE, reveals a very rich phenomomenology, including photospheric features from heavy elements, circumstellar features, and the first direct detection of accretion onto the white dwarf component of a binary system. Specific results include the following: Our observations of the ultrahot degenerate H1504+65 confirm that it has a photosphere which is depleted in both H and He, and reveals features of C IV and O VI. The spectrum fits previously published models extremely well. The intermediate-temperature DO star PG 1034+001 has an ultraviolet spectrum showing complex profiles of the well-known resonance doublets of C IV, N v, and Si IV. The O V 1371 line shows a clear separation into a photospheric and a circumstellar component, and it is likely that the same two components can explain the other lines as well. The cooler DA star GD 394 has an extensive system of heavy-element features, but their radial velocity is such that it is highly unlikely that they are formed in the stellar photosphere. Time-resolved spectra of the accreting white dwarf in the V 471 Tau binary system are briefly presented here; they do show the presence of C IV, Si IV, and He II. However, the C IV and He II lines are in emission, rather than in aborption as had been expected.

Shipman, Harry L.↗

NASA NTRS1995

Determination of the electrical conductivity of liquid Ge(0.95)Si(0.05)

We have measured the electrical conductivity of molten germanium-silicon Ge(0.95)Si(0.05) from the liquidus temperature (1050 C) up to 1220 C. The data were acquired with a unique apparatus which utilizes the standard four-probe technique. The basic unit consists of a fused silica enclosure that contains hermetic glass-to-tungsten seals that can support vacuum pressures down to 10(exp -7) Torr. With calibration, the measurement error for the low vapor pressure materials of this study was typically less than 7%. The temperature dependence of the electrical conductivity of a Ge(0.95)Si(0.05) melt was found to vary from approximately 22,300/ohm/cm at the liquidus temperature down to approximately 16,000/ohm/cm at 1220 C. The negative temperature coefficient as well as the magnitude of these data clearly indicate that the molten material is metallic in nature despite the semiconducting properties of the solid.

Rolin, T. D.↗

NASA NTRS1996

The Influence of C and Si on the Flow Behavior of NiAl Single Crystals

Alloys based on the intermetallic compound NiAl are considered potential replacements for Ni and Co-based superalloys in high temperature structural applications due to their excellent oxidation resistance, low densities, high thermal conductivities, and increased melting points. Unfortunately, NiAl exhibits low tensile ductility at room temperature and low strengths at elevated temperatures which have combined to hinder its development. Recent efforts, have revealed that NiAl in the presence of sufficient solute levels, is subject to the phenomenon of strain aging which manifests itself as: sharp yield points, abnormally low strain rate sensitivities (SRS), plateaus or peaks in yield stress and work hardening rate as a function of temperature, flow stress transients upon an upward change in strain rate, reduced tensile elongations at elevated temperatures, and serrated stress-strain curves. Though recent efforts via either alloying or the removal of interstitial impurities, have resulted in consistent room-temperature tensile elongations exceeding 5% and the elimination of serrated flow, the effects of particular substitutional and interstitial elements and the mechanisms by which they might enhance or hinder the mechanical properties remain unknown. Consequently, the purpose of the present paper is to provide a preliminary assessment of the influence of common substitutional and interstitial impurities on the deformation behavior of NiAl. To accomplish this goal a series of NiAl single crystal alloys containing various interstitial solutes were prepared and their mechanical properties were evaluated between 77 and 1100 K. Because Si is a common impurity in conventional purity single crystals grown by the Bridgman method, Si concentrations were also varied in order to determine the influence of this element.

Weaver, M. L.↗

NASA NTRS1997

Charge Transfer Between Ground-State Si(3+) and He at Electron-Volt Energies

The charge-transfer rate coefficient for the reaction Si(3+)(3s(sup 2)S) + He yields products is measured by means of a combined technique of laser ablation and ion storage. A cylindrical radio-frequency ion trap was used to store Si(3+) ions produced by laser ablation of solid silicon targets. The rate coefficient of the reaction was derived from the decay rate of the ion signal. The measured rate coefficient is 6.27(exp +0.68)(sub -0.52) x 10(exp -10)cu cm/s at T(sub equiv) = 3.9 x 10(exp 3)K. This value is about 30% higher than the Landau-Zener calculation of Butler and Dalgarno and is larger by about a factor of 3 than the recent full quantal calculation of Honvault et al.

Fang, Z.↗

NASA NTRS2000

Low Cost Al-Si Casting Alloy As In-Situ Composite for High Temperature Applications

A new aluminum-silicon (Al-Si) alloy has been successfully developed at NASA- Marshall Space Flight Center (MSFC) that has significant improvement in tensile and fatigue strength at elevated temperatures (500 F-700 F). The alloy offers a number of benefits such as light weight, high hardness, low thermal expansion and high surface wear resistance. In hypereutectic form, this alloy is considered as an in-situ Al-Si composite with tensile strength of about 90% higher than the auto industry 390 alloy at 600 F. This composite is very economically produced by using either conventional permanent steel molds or die casting. The projected material cost is less than $0.90 per pound, and automotive components such as pistons can be cast for high production rate using conventional casting techniques with a low and fully accounted cost. Key Words: Metal matrix composites, In-situ composite, aluminum-silicon alloy, hypereutectic alloy, permanent mold casting, die casting.

Lee, Jonathan A.↗

NASA NTRS2000

High-Q X-Band and K-Band Micromachined Spiral Inductors for Use in Si-Based ICs

A micromachined structure with reduced parasitics is proposed to enhance the resonant frequency and the quality factor (Q) of a spiral inductor. Inductors with various etch depths have been fabricated on a high resistivity Si substrate. Two-port S-parameters measurement is taken to characterize the performance of the inductors. With an etch depth of 20 micron, a fabricated 1.8 nH spiral inductor achieves a maximum resonant frequency of 25.6 GHz and a maximum Q of 20.2 at 14.5 GHz. This technology is compatible with SiGe/Si HBT technology, and the spiral inductors are especially suitable for Si-based monolithic microwave integrated circuit (MMIC) applications.

Lu, Liang-Hung↗

NASA NTRS2001

Experimental and Theoretical Investigations of the Solidification of Eutectic Al-Si Alloy

The eutectic alloys have a wide spectrum of applications due to their good castability and physical and mechanical properties. The interphase spacing resulting during solidification is an important microstructural feature that significantly influences the mechanical behavior of the material. Thus, knowledge of the evolution of the interphase spacing during solidification is necessary in order to properly design the solidification process and optimize the material properties. While the growth of regular eutectics is rather well understood, the irregular eutectics such as Al-Si or Fe-graphite exhibit undercoolings and lamellar spacings much larger than those theoretically predicted. Despite of a considerable amount of experimental and theoretical work a clear understanding of the true mechanism underlying the spacing selection in irregular eutectics is yet to be achieved. A new experimental study of the solidification of the eutectic Al-Si alloy will be reported in this paper. The measured interface undercoolings and lamellar spacing will be compared to those found in the literature in order to get more general information regarding the growth mechanism of irregular eutectics. A modification of the present theory of the eutectic growth is also proposed. The results of the modified mathematical model, accounting for a non-isothermal solid/liquid interface, will be compared to the experimental measurements.

Sen, S.↗

NASA NTRS2001

Lamellar Spacing Selection in Al-Si Eutectic System: a Theoretical Investigation

It is well known that irregular eutectics such as Al-Si and Fe-C exhibit larger lamellar spacings and undercoolings compared to the predictions made by the Jackson and Hunt (JH) theory. In this paper, we reexamine the JH theory and relax some of the assumptions used in that treatment. The modified theoretical model has enhanced capabilities to predict the lamellar spacing in both regular and irregular eutectics. For the Al-Si system in particular we identified two different spacing selection mechanisms:a) for a particular growth rate, a nearly isothermal interface can be achieved at a unique minimum spacing lambda(sub I); b) the average spacing in the microstructure (lambda(sub av) greater than lambda(sub I)) is essentially dictated by the undercooling of the faceted phase. Based on the modified theoretical model a semi-empirical expression has been developed to account for the influence of the temperature gradient. Application of a Mullin and Sekerka type stability analysis for eutectics will also be presented and the results compared to the modified JH model. It will be shown that the both theoretical approaches are in good agreement with each other and also with the published experimental measurements.

Catalina, Adrian V.↗

NASA NTRS2002

Wetting Angles and Surface Tension of Ge(1-x)Si(x) Melts on Different Substrate Materials

The wetting angles and the surface tension of Ge(1-x)Si(x) melts (0.02 less than x less than 0.13) have been measured on various substrate materials using the sessile drop technique. Fused quartz, sapphire, SiC, glassy carbon, pBN, AIN, and Si3N4 have been used as substrates. The highest and most stable wetting angles were found for pBN substrates with 164 +/- 8 deg., either under forming gas with an additional carbon getter in the system or under active vacuum. The surface tension measurements resulted in a value of +2.2 x 10(exp -3) N/m.at%Si for the concentration dependence delta(gamma)/(delta)C. For the composition range measured, the temperature dependence (delt)gamma/(delta)T showed values similar to those of pure Ge, on average -0.07 x 10(exp -3) N/mK.

Croell, A.↗

NASA NTRS2002

The Stellar Imager (SI) Mission Concept

The Stellar Imager (SI) is envisioned as a space-based, UV-optical interferometer composed of 10 or more one-meter class elements distributed with a maximum baseline of 0.5 km. It is designed to image stars and binaries with sufficient resolution to enable long-term studies of stellar magnetic activity patterns, for comparison with those on the sun. It will also support asteroseismology (acoustic imaging) to probe stellar internal structure, differential rotation, and large-scale circulations. SI will enable us to understand the various effects of the magnetic fields of stars, the dynamos that generate these fields, and the internal structure and dynamics of the stars. The ultimate goal of the mission is to achieve the best-possible forecasting of solar activity as a driver of climate and space weather on time scales ranging from months up to decades, and an understanding of the impact of stellar magnetic activity on life in the Universe. In this paper we describe the scientific goals of the mission, the performance requirements needed to address these goals, the "enabling technology" development efforts being pursued, and the design concepts now under study for the full mission and a possible pathfinder mission.

Carpenter, Kenneth G.↗

NASA NTRS2002

Single Junction InGaP/GaAs Solar Cells Grown on Si Substrates using SiGe Buffer Layers

Single junction InGaP/GaAs solar cells displaying high efficiency and record high open circuit voltage values have been grown by metalorganic chemical vapor deposition on Ge/graded SiGe/Si substrates. Open circuit voltages as high as 980 mV under AM0 conditions have been verified to result from a single GaAs junction, with no evidence of Ge-related sub-cell photoresponse. Current AM0 efficiencies of close to 16% have been measured for a large number of small area cells, whose performance is limited by non-fundamental current losses due to significant surface reflection resulting from greater than 10% front surface metal coverage and wafer handling during the growth sequence for these prototype cells. It is shown that at the material quality currently achieved for GaAs grown on Ge/SiGe/Si substrates, namely a 10 nanosecond minority carrier lifetime that results from complete elimination of anti-phase domains and maintaining a threading dislocation density of approximately 8 x 10(exp 5) per square centimeter, 19-20% AM0 single junction GaAs cells are imminent. Experiments show that the high performance is not degraded for larger area cells, with identical open circuit voltages and higher short circuit current (due to reduced front metal coverage) values being demonstrated, indicating that large area scaling is possible in the near term. Comparison to a simple model indicates that the voltage output of these GaAs on Si cells follows ideal behavior expected for lattice mismatched devices, demonstrating that unaccounted for defects and issues that have plagued other methods to epitaxially integrate III-V cells with Si are resolved using SiGe buffers and proper GaAs nucleation methods. These early results already show the enormous and realistic potential of the virtual SiGe substrate approach for generating high efficiency, lightweight and strong III-V solar cells.

Ringel, S. A.↗

NASA NTRS2004

Thermodynamics of the Si-O-H System

Thermodynamic functions for Si(OH)4(g) and SiO(OH)2(g) have been measured using the transpiration method. A second law enthalpy of formation and entropy and a third law enthalpy of formation has been calculated for Si(OH)4. The results are in very good agreement with previous experimental measurements, ab-initio calculations, and estimates.

Jacobson, Nathan S.↗

NASA NTRS1999

Si Tight-Binding Parameters from Genetic Algorithm Fitting

Quantum mechanical simulations of carrier transport in Si require an accurate model of the complicated Si bandstructure. Tight-binding models are an attractive method of choice since they bear the full electronic structure symmetry in them and they can discretize a realistic device on an atomic scale.

genetic algorithm Tight-Binding Parameters↗

NASA NTRS1993

Photoresponse Model for Si_(1-x)Ge_x/Si Heterojunction Internal Photoemission Infrared Detector

A photoresponse model has been developed for the Si_(1-x)Ge_x/Si heterojunction internalphotoemission (HIP) infrared detector at wavelengths corresponding to photon energies less than theFermi energy. A Si_(0.7)Ge_(0.3)/Si HIP detector with a cutoff wavelength of 23 micrometers andan emission coefficient of 0.4 eV^(-1) has been demonstrated. The model agrees with the measureddetector response at lambda greater than 8 micrometers. The potential barrier determined by themodel is in close agreement (difference similar to 4 meV) with the potential barrier determined by theRichardson plot, compared to the discrepancies of 20-50 meV usually observed for PtSi Schottkydetectors.

Lin, T.↗

NASA NTRS2006

Effects of Displacement Damage on the Time-Resolved Gain and Bandwidth of a Low Breakdown Voltage Si Avalanche Photodiode

Effects of displacement damage and ionization damage induced by gamma irradiation on the dark current and impulse response of a high-bandwidth low breakdown voltage Si Avalanche Photodiode has been investigated using picosecond laser microscopy. At doses as high as 10Mrad (Si) minimal alteration in the impulse response and bandwidth were observed. However, dark current measurements also performed with and without biased irradiation exhibit anomalously large damage factors for applied biases close to breakdown. The absence of any degradation in the impulse response is discussed as are possible mechanisms for higher dark current damage factors observed for biased irradiation.

bandwidth↗

NASA NTRS2011

Simulation and Measurement of Absorbed Dose from 137 Cs Gammas Using a Si Timepix Detector

The TimePix readout chip is a hybrid pixel detector with over 65k independent pixel elements. Each pixel contains its own circuitry for charge collection, counting logic, and readout. When coupled with a Silicon detector layer, the Timepix chip is capable of measuring the charge, and thus energy, deposited in the Silicon. Measurements using a NIST traceable 137Cs gamma source have been made at Johnson Space Center using such a Si Timepix detector, and this data is compared to simulations of energy deposition in the Si layer carried out using FLUKA.

Stoffle, Nicholas↗

NASA NTRS2016

Evaluation of GLAMR-Based Calibration for SI-Traceable Field Reflectance Retrievals

The reflected solar instrument that is part of the Climate Absolute Radiance and Refractivity Observatory (CLARREO) mission is being formulated with a goal of providing SI-traceable measurement of radiance that is an order of magnitude more accurate than the current imaging sensors. The Goddard Laser for Absolute Measurement of Radiance (GLAMR) is a key element to reaching such accuracy along with transferring the laboratory calibration to on-orbit measurements. Results from field reflectance retrievals using three separate instruments all of which have been calibrated using GLAMR are shown. The instruments include a commercial field spectrometer and a portable version of CLARREO's calibration demonstration system. The third instrument is NASA Goddard's Lidar, Hyperspectral and Thermal Imager (G-LiHT) which is an airborne system. All three were operated during a March 2013 measurement campaign at Red Lake Playa, Arizona as part of the on-orbit commissioning phase of Landsat 8. Reflectance is derived from near-coincident measurements by the three sensors for a small area of the playa. The retrieved results are SI-traceable and demonstrate the ability to transfer the GLAMR calibration to the field. Use of the G-LiHT data in the calibration of Landsat-7 and -8 sensors permits them both to be placed on the GLAMR-scale as well.

Angal, Amit↗