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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 757 records · Page 42
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Photoconductive Semiconductor Switches: Materials, Physics, and Applications

Photoconductive semiconductor switching (PCSS) devices have unique characteristics to address the growing need for electrically isolated, optically gated, picosecond-scale jitter devices capable of operating at high voltage, current, and frequency. The state of the art in material selection, doping, triggering, and system integration in PCSSs is presented. The material properties and doping considerations of GaN, GaAs, SiC, diamond, and β-Ga2O3 in the fabrication of PCSS devices are discussed. A review of the current understanding of the physics of the high-gain mode known as lock-on is presented.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Measurement and Simulation of Ultra-Low-Energy Ion–Solid Interaction Dynamics

Ion implantation is a key capability for the semiconductor industry. As devices shrink, novel materials enter the manufacturing line, and quantum technologies transition to being more mainstream. Traditional implantation methods fall short in terms of energy, ion species, and positional precision. Here, we demonstrate 1 keV focused ion beam Au implantation into Si and validate the results via atom probe tomography. We show the Au implant depth at 1 keV is 0.8 nm and that identical results for low-energy ion implants can be achieved by either lowering the column voltage or decelerating ions using bias while maintaining a sub-micron beam focus. We compare our experimental results to static calculations using SRIM and dynamic calculations using binary collision approximation codes TRIDYN and IMSIL. A large discrepancy between the static and dynamic simulation is found, which is due to lattice enrichment with high-stopping-power Au and surface sputtering. Additionally, we demonstrate how model details are particularly important to the simulation of these low-energy heavy-ion implantations. Finally, we discuss how our results pave a way towards much lower implantation energies while maintaining high spatial resolution.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Synthesis and Properties of Nanostructured Exotic Superconductors (Final Report)

Superconductors are materials that conduct electricity with no resistance, i.e. no energy dissipation. In future electrically activated nanodevices, the use of superconducting interconnects is highly desirable, since it circumvents the damaging heat produced by energy dissipation in normal nano-conductors whose high resistance is inversely proportional to its cross-section area. Furthermore, the wave functions of the charge carriers - Cooper pairs will be strongly modified in a superconductor when they are squeezed into a small volume comparable to the coherence length or penetration depth. Thus, superconducting nanostructures provide unique platforms to investigate and discover novel superconducting phenomena in confined geometries. The objective of this DOE funded project was the development of novel approaches to synthesizing a new class of superconducting nanostructures such as nanowires and nanoribbons that are stable in atmosphere, enabling the exploration of superconducting properties and potential applications of individual nanostructures. We also pursued the modification of properties of the fabricated nanostructures by introducing artificial defects through nanoengineering. We developed a conversion approach comprised of two-steps to synthesize NbSe 2 and NbN nanowires/ribbons that were not achievable using other routes: first, we synthesized one-dimensional (1D) nanostructures of NbSe 3 and second, we converted these into desired 1D superconducting nanostructures of NbSe 2 and NbN by adjusting the composition of NbSe 3 nanostructure precursors while maintaining their shapes. Novel phenomena such as resistance oscillations with increasing magnetic fields were observed in both NbSe 2 and NbN nanowires/ribbons. By replacing the catalytic microparticles used in conventional whisker growth with the same kind of nanoparticles that are available now commercially, we improved whisker technologies for nanofabrication of high-T c superconductor nanowires/ribbons: we succeeded in the growth of Bi 2 Sr 2 CaCu 2 O 8+x (BSCCO-2212) and YBa 2 Cu 3 O 7-x (YBCO) nanowires and nanoribbons by annealing glassy precursors with alumina nanoparticles as growth sites. The high-quality whiskers enabled us to observe the ‘matching effect’ that represents itself as dips in the field dependence of the magnetoresistance and the influence of the periodic defects on the melting behavior of vortex matter. We also observed N-shaped V-I characteristics similar to those observed in semiconductor and plasma devices for the first time. Each nanofabrication technique has its advantages and drawbacks. For example, electron-beam lithography (EBL), in combination thin film deposition, has been widely used to fabricate nanowires (nanobridge) with well-defined cross-sections. However, electron-beam resist usually contaminates the sample up to a few hundred nanometers and hence degrades the quality of the entire nanowires if their widths are only a few hundred nanometers. We found that e-beam resist can degrade the superconducting critical temperature of a Nb nanowire from 9 K down to below 4 K if its width is less than 200 nm. We investigated the suitability of the various nanofabrication methods for achieving high-quality samples with desired properties. For example, we developed a novel way to achieve high quality Nb nanostrips with transverse dimensions of 150 nm or smaller. In the new process a superconducting bridge a few micrometers wide is fabricated with EBL. Subsequently, focused-ion-beam (FIB) is used to mill nano- 2 grooves to isolate an uncontaminated area of the microbridge to form a nanostrip. The high-quality superconducting Nb nanostrips with well-defined rectangular cross-sections fabricated using this new technique have enabled experimental confirmation of the theoretically predicted confinement-induced anisotropy effect on the magnetoresistance and critical field. We also found that FIB milling is more suitable than EBL in producing a pinning potential array with desired barrier between them into a MoGe film, which enabled us to realize the predicted vortex ices for the first time. By utilizing a filtration membrane as the substrate, we developed a new method to achieve networks of superconducting MoGe nanowires with transverse dimensions smaller than 10 nm. We observed superconducting confinement effect such as thermally activated phase slips and Little-Parks effect in these new samples. This research significantly advanced our knowledge on confined superconductors, in both their synthesis and physical properties. Though the new fabrication methods developed in this project aimed to achieve samples for studying new phenomena in confined superconductors, they can be utilized to obtain nanostructures of other functional materials. For example, we utilized the method developed to produce superconducting nanowire networks for the fabrication of networks of ultrasmall palladium (Pd) nanowires, which take advantage of single Pd nanowires while eliminating their nanofabrication obstacles, resulting in high-performance hydrogen sensors that are much more cost effective than those based on single Pd nanowires fabricated with lithography methods.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Back-side readout semiconductor photomultiplier

This disclosure provides systems, methods, and apparatus related to semiconductor photomultipliers. In one aspect, a device includes a p-type semiconductor substrate, the p-type semiconductor substrate having a first side and a second side, the first side of the p-type semiconductor substrate defining a recess, and the second side of the p-type semiconductor substrate being doped with n-type ions. A conductive material is disposed in the recess. A p-type epitaxial layer is disposed on the second side of the p-type semiconductor substrate. The p-type epitaxial layer includes a first region proximate the p-type semiconductor substrate, the first region being implanted with p-type ions at a higher doping level than the p-type epitaxial layer, and a second region disposed on the first region, the second region being doped with p-type ions at a higher doping level than the first region.

42 ENGINEERING↗
DOE OSTI2015

Systems and methods for producing low work function electrodes

According to an exemplary embodiment of the invention, systems and methods are provided for producing low work function electrodes. According to an exemplary embodiment, a method is provided for reducing a work function of an electrode. The method includes applying, to at least a portion of the electrode, a solution comprising a Lewis basic oligomer or polymer; and based at least in part on applying the solution, forming an ultra-thin layer on a surface of the electrode, wherein the ultra-thin layer reduces the work function associated with the electrode by greater than 0.5 eV. According to another exemplary embodiment of the invention, a device is provided. The device includes a semiconductor; at least one electrode disposed adjacent to the semiconductor and configured to transport electrons in or out of the semiconductor.

36 MATERIALS SCIENCE↗
DOE OSTI2017

High throughput semiconductor deposition system

A reactor for growing or depositing semiconductor films or devices. The reactor may be designed for inline production of III-V materials grown by hydride vapor phase epitaxy (HVPE). The operating principles of the HVPE reactor can be used to provide a completely or partially inline reactor for many different materials. An exemplary design of the reactor is shown in the attached drawings. In some instances, all or many of the pieces of the reactor formed of quartz, such as welded quartz tubing, while other reactors are made from metal with appropriate corrosion resistant coatings such as quartz or other materials, e.g., corrosion resistant material, or stainless steel tubing or pipes may be used with a corrosion resistant material useful with HVPE-type reactants and gases. Using HVPE in the reactor allows use of lower-cost precursors at higher deposition rates such as in the range of 1 to 5 .mu.m/minute.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Nonlinear transmission line high voltage pulse sharpening

Some embodiments include a high voltage nonlinear transmission line that includes a high voltage input configured to receive electrical pulses having a first peak voltage that is greater than 5 kV having a first rise time; a plurality of circuit elements electrically coupled with ground, each of the plurality of circuit elements includes a resistor and a nonlinear semiconductor junction capacitance device; a plurality of inductors, at least one of the plurality of inductors is electrically coupled between two circuit elements of the plurality of circuit elements; and a high voltage output providing a second peak voltage with a second rise time that is faster than the first rise time.

Prager, James R.↗
DOE OSTI2019

High throughput semiconductor deposition system

A reactor for growing or depositing semiconductor films or devices. The reactor may be designed for inline production of III-V materials grown by hydride vapor phase epitaxy (HVPE). The operating principles of the HVPE reactor can be used to provide a completely or partially inline reactor for many different materials. An exemplary design of the reactor is shown in the attached drawings. In some instances, all or many of the pieces of the reactor formed of quartz, such as welded quartz tubing, while other reactors are made from metal with appropriate corrosion resistant coatings such as quartz or other materials, e.g., corrosion resistant material, or stainless steel tubing or pipes may be used with a corrosion resistant material useful with HVPE-type reactants and gases. Using HVPE in the reactor allows use of lower-cost precursors at higher deposition rates such as in the range of 1 to 5 .mu.m/minute.

Young, David L.↗
DOE OSTI2019

Detailed Radiation Dose Rate Evaluations of Commercial Spent Nuclear Fuel Canisters

Electronic devices that are being designed for continuous monitoring of spent nuclear fuel (SNF) canister internal integrity may be subjected to very high radiation levels depending on their placement. Components of electronic devices (e.g., silicon semiconductors, optical glasses, insulators) have a limited tolerance to ionizing radiation. For selected locations on the inner and outer surfaces of a representative dry storage pressurized water reactor (PWR) SNF canister and a representative dry storage boiling water reactor (BWR) SNF canister, this paper provides (1) the dose rate in silicon as a function of decay time and (2) the time-integrated dose in silicon. The analyzed decay time interval is from 5 to 70 years after fuel discharge. Each representative canister contained identical SNF assemblies with bounding radiation sources. Surface dose rates varied significantly as a function of location and SNF assembly decay time. At a 5-year decay time, the estimated maximum dose rate values were 480 Gy/h (PWR canister) and ~366 Gy/h (BWR canister), and the estimated minimum dose rate was ~0.2 Gy/h for both canisters. Over a 65-year period, the dose rate decreased by a factor between 13 and 580, depending on location. The total dose over a time interval could be very large (e.g., estimated maximum value over a 5-year interval is 1.5E+07 Gy) depending on location and the time interval over which dose is accumulated.

Radulescu, Georgeta↗
DOE OSTI2018

The role of surface ligands in quantum-dot devices: Villain or unsung hero?

For over three decades, the study of nanocrystal quantum dots (QDs), which are solution-synthesized nanometer-scale bits of semiconductor materials, has produced singular advances in both our understanding of quantum confinement effects, and in our ability to make use of them in tech-relevant materials. Accordingly, QDs have found their way into the marketplace, specifically as high-performance fluorophores for, e.g., displays and biolabeling. In such applications, optimization of the QD surface, including the passivating ligands, is key to keeping photo-excited carriers from leaving the QD interior before recombining, resulting in a high fluorescence efficiency. Increasingly, attention has turned to realize the promise of QDs for optoelectronic applications (e.g., solar cells, LEDs, sensors) which require charge carriers to controllably enter, exit and/or travel through QDs, a much more challenging problem. In this scenario, the role of the QD surface must be completely reimagined, from being an impenetrable wall to being a gateway, or even a ramp. In this talk, I’ll explore the inherent contrast between QD fluorophore and device applications, and describe how ligands, originally thought only to be impediments to QD electronic devices, may actually give the savvy QD device designer control over function and performance in a manner unknown in bulk semiconductor devices. Finally, I’ll survey recent efforts at Los Alamos to develop a universal tool box for deposition of conductive QD films that may finally allow the manufacturing of economical, high-performance devices for a wide range of applications.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Near-field radiative thermoelectric energy converters: a review

Radiative thermoelectric energy converters, which include thermophotovoltaic cells, thermoradiative cells, electroluminescent refrigerators, and negative electroluminescent refrigerators, are semiconductor p-n devices that either generate electricity or extract heat from a cold body while exchanging thermal radiation with their surroundings. If this exchange occurs at micro or nanoscale distances, power densities can be greatly enhanced and near-field radiation effects may improve performance. This Review covers the fundamentals of near-field thermal radiation, photon entropy, and nonequilibrium effects in semiconductor diodes that underpin device operation. The development and state-of-the art of these near-field converters are discussed in detail. In conclusion, remaining challenges and opportunities for progress are identified.

30 DIRECT ENERGY CONVERSION↗
DOE OSTI2023

Sources of error and methods to improve accuracy in interface state density analysis using quasi-static capacitance–voltage measurements in wide bandgap semiconductors

Characterizing interface trap states in commercial wide bandgap devices using frequency-based measurements requires unconventionally high probing frequencies to account for both fast and slow traps associated with wide bandgap materials. The C - ψs technique has been suggested as a viable quasi-static method for determining the interface trap state densities in wide bandgap systems, but the results are shown to be susceptible to errors in the analysis procedure. Here this work explores the primary sources of errors present in the C - ψs technique using an analytical model that describes the apparent response for wide bandgap MOS capacitor devices. Measurement noise is shown to greatly impact the linear fitting routine of the 1/C$^{*2}_s$ vs Ψ s plot to calibrate the additive constant in the surface potential/gate voltage relationship, and an inexact knowledge of the oxide capacitance is also shown to impede interface trap state analysis near the band edge. In addition, a slight nonlinearity that is typically present throughout the 1/C$^{*2}_s$ vs Ψ s plot hinders the accurate estimation of interface trap densities, which is demonstrated for a fabricated n-SiC MOS capacitor device. Methods are suggested to improve quasi-static analysis, including a novel method to determine an approximate integration constant without relying on a linear fitting routine.

42 ENGINEERING↗
DOE OSTI2021

Coupled Charge and Radiation Transport Processes in Thermophotovoltaic and Thermoradiative Cells

Accurate modeling of charge transport and both thermal and luminescent radiation is crucial to the understanding and design of radiative thermal energy converters. Charge-carrier dynamics in semiconductors are well-described by the Poisson-drift-diffusion equations, and thermal radiation in emitter-absorber structures can be computed using multilayer fluctuational electrodynamics. These two types of energy flows interact through radiation absorption or luminescence and charge-carrier generation or recombination. However, past research has typically only assumed limited interaction, with thermal radiation absorption as an input for charge-carrier models to predict device performance. To examine this assumption, we develop a fully coupled iterative model of charge and radiation transport in semiconductor devices, and we use our model to analyze near-field and far-field GaSb thermophotovoltaic and thermoradiative systems. By comparing our results with past methods that do not consider cross-influences between charge and radiation transport, we find that a fully coupled approach is necessary to accurately model photon recycling and near-field enhancement of external luminescence. As these effects can substantially alter device performance, our modeling approach can aid in the design of efficient thermophotovoltaic and thermoradiative systems.

30 DIRECT ENERGY CONVERSION↗
DOE OSTI2025

Multistate resistance in TaN/(Hf,Zr)O 2 /Ta ferroelectric tunnel junctions

Ferroelectric tunnel junctions (FTJs) utilizing hafnium zirconium oxide (HZO) have emerged as promising non-volatile memory elements for microelectronics, compatible with back end of line (BEOL) complementary–metal–oxide semiconductor fabrication. This study investigates asymmetric electrode TaN/HZO/Ta devices with a 6 nm thick HZO layer as FTJs for multistate resistive memory applications. The individual FTJs exhibit a resistance ratio exceeding 10× when utilized as a binary state device, with pulsing between −1.7 and +1.4 V to set the high resistance state (HRS) and low resistance state (LRS), respectively. Following with reduced write voltage pulses allows the ferroelectric device to operate with a selection of over 32 distinct resistance states (2 5 bits) between the LRS and HRS. This work then explores the stability of the resistance states during write/read pulse cycling, along with the stability of the state after multiple read pulses. Accessing the multibit state shows stability within 50 reads with the binary state remaining stable for more than 4000 reads pulses. With their multistate tunability and versatility, FTJs hold promise as BEOL memory elements for compute-in-memory (CiM) arrays, binary digital memory, or weighted vector matrix multiplication applications with low power consumption during computations.

CMOS↗
DOE OSTI2018

Electronic and transport properties of Li-doped NiO epitaxial thin films

NiO is a p-type wide bandgap semiconductor of use in various electronic devices ranging from solar cells to transparent transistors. Understanding and improving its optical and transport properties have been of considerable interest. In this work, we have investigated the effect of Li doping on the electronic, optical and transport properties of NiO epitaxial thin films grown by pulsed laser deposition. We show that Li doping significantly increases the p-type conductivity of NiO, but all the films have relatively low room-temperature mobilities (<0.05 cm2 V -1 s -1 ). The conduction mechanism is better described by small-polaron hoping model in the temperature range of 200 K < T <330 K, and variable range hopping at T <200 K. A combination of x-ray photoemission and O K-edge x-ray absorption spectroscopic investigations reveal that the Fermi level gradually shifts toward the valence band maximum (VBM) and a new hole state develops with Li doping. Both the VBM and hole states are composed of primarily Zhang-Rice bound states, which accounts for the small polaron character (low mobility) of hole conduction. Our work provides guidelines for the search for p-type oxide materials and device optimization. NiO is a p-type wide bandgap semiconductor of use in various electronic devices ranging from solar cells to transparent transistors. This work reports the controlling of conductivity and increase of work functions by Li doping.

Environmental Molecular Sciences Laboratory↗
DOE OSTI2022

Asymmetric side-chain engineering in semiconducting polymers: a platform for greener processing and post-functionalization of organic electronics

Organic semiconducting polymers are a powerful platform for the design of next-generation technologies due to their excellent optoelectronic properties and solution processability, allowing access to low-cost and scalable manufacturing techniques such as spin-coating, slot-die coating and roll-to-roll printing. However, their extended π-conjugation results in low solubility, requiring the use of toxic halogenated solvents to generate thin films and devices. Furthermore, accessible post-functionalization of semiconductors toward the development of multifunctional devices and sensors remains a challenge due to limited solid-state chemistry for alkyl side chains. In this work, an asymmetric side-chain engineering approach was used to introduce terminal hydroxyl moieties alongside traditional solubilizing branched alkyl chains into an isoindigo-based polymer. The hydroxyl moieties led to significantly improved processability in alcohol-based solvents without sacrificing electronic performance in thin film organic field-effect transistors. Solid state morphologies of the thin films processed from both alcohol-based and traditional halogenated solvents were further characterized using atomic force microscopy and grazing incidence wide angle X-ray scattering. Additionally, Cryo-EM was utilized in order to characterize the role of asymmetric side-chain functionality in solution state aggregation. The versatility of this design was further probed using fluorescein isothiocyanate to directly functionalize the asymmetric polymer in thin film. Furthermore, this facile solid-state post-functionalization further demonstrates asymmetric side-chain engineering to be a viable approach toward the development of sustainably manufactured multifunctional electronics.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

Growth of Nanometer-Thick γ-InSe on Si(111) 7 × 7 by Molecular Beam Epitaxy for Field-Effect Transistors and Optoelectronic Devices

γ-InSe is a semiconductor that holds promising potential in high-performance field-effect transistors and optoelectronic devices. Large-scale, single-phase γ-InSe deposition has proven challenging because of the difficulty in precise control of stoichiometry and the coexistence of different indium selenide phases. In this study, we demonstrate the wafer-scale combinatorial approach to map out the growth window as functions of the Se/In ratio and growth temperature for γ-InSe on the Si(111) 7 × 7 substrate in molecular beam epitaxy. X-ray diffraction (XRD) was used to identify the indium selenide phases, while atomic force microscopy revealed four distinct surface morphologies of γ-InSe, enabling a discussion of the growth mechanisms associated with each morphology. Cross-sectional atomic resolution scanning transmission electron microscopy confirmed that the film was of high crystalline quality and had nearly single-phase γ-InSe. In conclusion, our comprehensive study elucidates the In–Se phase map for thin film growth parameters, providing invaluable landmarks for the reproducible synthesis of high-quality γ-InSe layers.

36 MATERIALS SCIENCE↗