Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “Phase III”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 757 records · Page 42
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

High-Pressure Phase Transition of Metastable Wurtzite-Like CuInSe 2 Nanocrystals

Ternary I–III–VI 2 semiconductors, such as CuInSe 2 , exhibit diverse polymorphs with unique structural characteristics and optoelectronic properties. This study investigates the pressure-induced phase transitions of metastable wurtzite-like CuInSe 2 nanocrystals. Using a combination of synchrotron X-ray diffraction, pair distribution function analysis, and density functional theory calculations, we reveal a transition from cation-ordered wurtzite-like (Pmc2 1 ) to cation-disordered NaCl-like (Fm3̅m) structures at 7.7 GPa. The cation-disordered NaCl-like phase persists upon decompression. Bulk modulus calculations highlight size-dependent deviations from bulk material behavior. These findings deepen our understanding of phase stability in colloidal I–III–VI 2 semiconductor nanocrystals, with implications for tailoring functional materials under extreme conditions.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2015

Evolution of silicon bulk lifetime during III–V‐on‐Si multijunction solar cell epitaxial growth

Abstract The evolution of Si bulk minority carrier lifetime during the heteroepitaxial growth of III–V on Si multijunction solar cell structures via metal‐organic chemical vapor deposition (MOCVD) has been analyzed. In particular, the impact on Si lifetime resulting from the four distinct phases within the overall MOCVD‐based III–V/Si growth process were studied: (1) the Si homoepitaxial emitter/cap layer; (2) GaP heteroepitaxial nucleation; (3) bulk GaP film growth; and (4) thick GaAs y P 1‐y compositionally graded metamorphic buffer growth. During Phase 1 (Si homoepitaxy), an approximately two order of magnitude reduction in the Si minority carrier lifetime was observed, from about 450 to ≤1 µs. However, following the GaP nucleation (Phase 2) and thicker film (Phase 3) growths, the lifetime was found to increase by about an order of magnitude. The thick GaAs y P 1‐y graded buffer was then found to provide further recovery back to around the initial starting value. The most likely general mechanism behind the observed lifetime evolution is as follows: lifetime degradation during Si homoepitaxy because of the formation of thermally induced defects within the Si bulk, with subsequent lifetime recovery due to passivation by fast‐diffusing atomic hydrogen coming from precursor pyrolysis, especially the group‐V hydrides (PH 3 , AsH 3 ), during the III–V growth. These results indicate that the MOCVD growth methodology used to create these target III–V/Si solar cell structures has a substantial and dynamic impact on the minority carrier lifetime within the Si substrate. Copyright © 2015 John Wiley & Sons, Ltd.

García‐Tabarés, Elisa↗
DOE OSTI2026

Intercomparison of flood inundation models across land use types and hydrological flood stages

Flood Inundation Mapping (FIM) model selection is a key operational decision because accurate, rapid mapping underpins early warning and resource allocation. FIM performance is context-dependent and can vary with hydrograph phase, land-use/land-cover (LULC), and the evaluation benchmark. Intercomparison studies typically assess a single near-peak snapshot against one reference dataset. Here, we provide a context-stratified intercomparison across (i) multiple hydrograph phases, (ii) LULC classes, and (iii) benchmark types, for five FIM approaches spanning a wide range of physical complexity and operational cost (TRITON, LISFLOOD-FP, HEC-RAS 2D, ARC-Curve2Flood, and OWP HAND-FIM). We use the Hurricane Matthew flood (2016) in the Neuse River Basin, North Carolina, USA, as a case study. Using high-resolution remote sensing-derived flood inundation maps, hand-labeled points, and building footprints, we assess model skill across two rising and two falling hydrograph limbs and across major LULC types. Results show that model rankings shift systematically across contexts: LISFLOOD-FP ranks highest in three of four flood phases, while TRITON leads during one rising limb phase; LISFLOOD-FP performs best in vegetated areas, whereas HEC-RAS improves relative performance in agricultural and urban areas; and benchmark choice influences conclusions, with LISFLOOD-FP performing best for flooded-building detection in the late falling limb, while TRITON ranks highest against hand-labeled points. We also report representative wall-clock runtimes for each workflow to provide use-case context for operational feasibility. Together, these results offer transferable guidance for model selection and for designing large-scale, benchmark-aware FIM intercomparison studies.

Nikrou, Parvaneh [University of Alabama]↗
NASA NTRS1973

Rapid gas-phase reactions - The reaction of ammonia and the methylamines with boron trifluoride. III - Pressure dependence of rate constant.

A steady-state flow apparatus, shown earlier to be suitable for the study of rapid gas reactions, has been used to determine the pressure dependence of the relative quasi-bimolecular rate constants for the reactant pairs ammonia (AM)-trimethylamine (TMA) and dimethylamine (DMA)-trimethylamine in reaction with boron trifluoride. The pressure dependence of the former was determined in the range 0.03-75 torr and that of the latter in the range 0.02-720 torr.

Glicker, S.↗
NASA NTRS2012

Phase Coupling Between Spectral Components of Collapsing Langmuir Solitons in Solar Type III Radio Bursts

We present the high time resolution observations of one of the Langmuir wave packets obtained in the source region of a solar type III radio burst. This wave packet satisfies the threshold condition of the supersonic modulational instability, as well as the criterion of a collapsing Langmuir soliton, i.e., the spatial scale derived from its peak intensity is less than that derived from its short time scale. The spectrum of t his wave packet contains an intense spectral peak at local electron plasma frequency, f(sub pe) and relatively weaker peaks at 2f(sub pe) and 3f(sub pe). We apply the wavelet based bispectral analysis technique on this wave packet and compute the bicoherence between its spectral components. It is found that the bicoherence exhibits two peaks at (approximately f(sub pe), approximately f(sub pe)) and (approximately f(sub pe) approximately 2f(sub pe)), which strongly suggest that the spectral peak at 2f(sub pe) probably corresponds to the second harmonic radio emission, generated as a result of the merging of antiparallel propagating Langmuir waves trapped in the collapsing Langmuir soliton, and, the spectral peak at 3f(sub pe) probably corresponds to the third harmonic radio emission, generated as a result of merging of a trapped Langmuir wave and a second harmonic electromagnetic wave.

Thejappa, G.↗
DOE OSTI2014

Enhanced von Weizsäcker Wang-Govind-Carter kinetic energy density functional for semiconductors

We propose a new form of orbital-free (OF) kinetic energy density functional (KEDF) for semiconductors that is based on the Wang-Govind-Carter (WGC99) nonlocal KEDF. We enhance within the latter the semi-local von Weizsäcker KEDF term, which is exact for a single orbital. The enhancement factor we introduce is related to the extent to which the electron density is localized. The accuracy of the new KEDF is benchmarked against Kohn-Sham density functional theory (KSDFT) by comparing predicted energy differences between phases, equilibrium volumes, and bulk moduli for various semiconductors, along with metal-insulator phase transition pressures. We also compare point defect and (100) surface energies in silicon for a broad test of its applicability. This new KEDF accurately reproduces the exact non-interacting kinetic energy of KSDFT with only one additional adjustable parameter beyond the three parameters in the WGC99 KEDF; it exhibits good transferability between semiconducting to metallic silicon phases and between various III-V semiconductors without parameter adjustment. Overall, this KEDF is more accurate than previously proposed OF KEDFs (e.g., the Huang-Carter (HC) KEDF) for semiconductors, while the computational efficiency remains at the level of the WGC99 KEDF (several hundred times faster than the HC KEDF). This accurate, fast, and transferable new KEDF holds considerable promise for large-scale OFDFT simulations of metallic through semiconducting materials.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2016

Structural, magnetic and phonon properties of Cr(III)-doped perovskite metal formate framework [(CH{sub 3}){sub 2}NH{sub 2}][Mn(HCOO){sub 3}]

We have incorporated Cr(III) into [(CH{sub 3}){sub 2}NH{sub 2}][Mn(HCOO){sub 3}] (DMMn) multiferroic metal organic framework (MOF). The highest concentration of Cr(III) in the synthesized samples reached 15.9 mol%. The obtained samples were characterized by powder and single-crystal X-ray diffraction, DSC, magnetic susceptibility, dielectric, EPR, Raman and IR methods. These methods and the performed chemical analysis revealed that electrical charge neutrality after substitution of Cr(III) for Mn(II) is maintained by partial replacement of dimethylammonium (DMA{sup +}) cations by neutral HCOOH molecules. These changes in the chemical composition are responsible for weakening of the hydrogen bonds and decreased flexibility of the framework. This in turn leads to lowering of the ferroelectric phase transition temperature, observed around 185 K for undoped DMMn and around 155 K for the sample containing 3.1 mol% of Cr(III), and lack of macroscopic phase transition for the samples with Cr(III) content of 8.2 and 15.9 mol %. Another interesting effect observed for the studied samples is pronounced strengthening of the weak ferromagnetism of in Cr(III)-doped samples, associated with slight decrease of the ferromagnetic ordering temperature from 8.5 K for DMMn to 7.0 K for the sample with 15.9 mol % Cr(III) content. - Graphical abstract: Incorporation of Cr(III) into [(CH3)2NH2[Mn(HCOO)3] framework increases the magnetization. - Highlights: • Chromium(III) substitutes for Mn(II) in the studied MOF. • Charge neutrality is maintained by replacing DMA{sup +} cations by neutral HCOOH molecules. • Compounds with 8.2 and 15.9% of Cr(III) show no phase transition above 100 K. • Doping with Cr(III) increases magnetization.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2019

Formation Mechanisms and Leachability of Hexavalent Chromium in Cr{sub 2}O{sub 3}-Containing Refractory Castables of Electric Arc Furnace Cover

Cr (III)-containing refractories are widely used as electric-arc furnace cover because of their excellent corrosion resistance properties. However, the formation of hexavalent chromium [Cr(VI)] remains a matter of concern during the service and subsequent disposal of the spent refractories. Moreover, the Cr(VI) formation mechanism and total amount of Cr(VI) generated are not clearly understood. In this study, samples from different parts of a spent electric arc furnace cover were collected from a local integrated steel plant. The phase composition, microstructure, formation and leachability of Cr(VI) were investigated using X-ray photoelectron spectroscopy, X-ray diffraction, scanning electron microscopy with energy dispersive X-ray spectroscopy, and TRGS 613 leaching test (Technische Regeln für Gefahrstoffe-TRGS 613-October 2002)/multiple leaching tests. A Cr(VI)-containing phase namely CaCrO{sub 4} existed in the sample at a medium temperature range, while another Cr(VI)-containing phase namely hauyne (Ca{sub 4}Al{sub 6}CrO{sub 16}) and a Cr(III)-containing phase (Al{sub 2}O{sub 3}–Cr{sub 2}O{sub 3} solid solution) formed in the high temperature region. Concentrations of Cr(VI) in the leachates (as in the TRGS 613 procedure) exceeded the European permissible limit. During the leaching tests in an acid condition, Cr(VI) was reduced by Fe{sup 2+}, which was primarily derived from the dissolution of FeO in the samples, while more Cr(VI) leached out with distilled water. Formation of an Al{sub 2}O{sub 3}–Cr{sub 2}O{sub 3} solid solution can inhibit Cr(VI) generation.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Coalescence of GaP on V-Groove Si

With an increase of control over crystalline defects, metallorganic vapor phase epitaxy (MOVPE)-grown III-V-on-Si multijunction solar cells have seen rapid increases in efficiency in recent years, pointing to a promising path to lower cost III-V solar cells. However, the cost of chemo-mechanical polishing the Si wafers to prepare them for epitaxy is high. The use of V-groove nanopatterns enables similar defect reduction to that achieved on planar wafers, but the nanopatterns can be fabricated with a low-cost process. While V-grooves offer advantages over planar Si, they add complexity to the growth process. In particular, coalescence can cause the formation of threading dislocations, and the highly-directional growth conditions required for coalescence are unusual for MOVPE. We have studied the coalescence of GaP films nucleated directly on V-groove Si by MOVPE. We observed that for optimized growth conditions (V/III=5,000 and T=800 C) two growth modes were possible, and the resulting morphology depended on the exact geometry of the SiNx cap used to cover the (0 0 1)-oriented Si at the tops of the grooves. For caps with a width >100 nm, noncoalescing, nano ridge-like growth terminating in f1 1 1g facets was observed. For narrower caps, coalescence with an RMS roughness of 0.2 nm as measured by atomic force microscopy was observed. We will discuss mechanisms responsible for this phenomenon, including the role of Si from the substrate surface. The dislocation dynamics of this system were studied with electron channeling contrast imaging (ECCI) and transmission electron microscopy (TEM). We find that V-grooves do not block dislocation glide; ECCI measurements show misfit dislocations greater than 10 micrometers long observed to continue perpendicularly across neighboring V-grooves. In addition, all threading dislocations appear to lie on f1 1 1g planes, consistent with the GaP relaxing via glided-in glissile dislocations. The dislocation dynamics and morphological evolution of the coalescence of GaP on Si, possible mechanisms behind the observed phenomenons, and further dislocation mitigation strategies for these materials will be presented.

dislocation dynamics↗
DOE OSTI2023

Mn(III)-mediated bisphenol a degradation: Mechanisms and products

Bisphenol A (BPA) is a high production volume chemical with potential estrogenic effects susceptible to abiotic degradation by MnO 2 . BPA transformation products and reaction mechanisms with MnO 2 have been investigated, but detailed process understanding of Mn(III)-mediated degradation has not been attained. Rapid consumption of BPA occurred in batch reaction vessels with 1 mM Mn(III) and 63.9 ± 0.7% of 1.76 ± 0.02 μmol BPA was degraded in 1 hour at circumneutral pH. BPA was consumed at 1.86 ± 0.09-fold higher rates in vessels with synthetic MnO 2 comprising approximately 13 mol% surface-associated Mn(III) versus surface-Mn(III)-free MnO 2 , and 10–35% of BPA transformation could be attributed to Mn(III) during the initial 10-min reaction phase. High-resolution tandem mass spectrometry (HRMS/MS) analysis detected eight transformation intermediates in reactions with Mn(III), and quantum calculations proposed 14 BPA degradation products, nine of which had not been observed during MnO 2 -mediated BPA degradation, suggesting mechanistic differences between Mn(III)- versus MnO 2 -mediated BPA degradation. Finally, the findings demonstrate that both Mn(III) and Mn(IV) can effectively degrade BPA and indicate that surface-associated Mn(III) increases the reactivity of synthetic MnO 2 , offering opportunities for engineering more reactive oxidized Mn species for BPA removal.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

Light–Induced Frenkel Defect Pair Formation Can Lead to Phase–Segregation of Otherwise Miscible Halide Perovskite Alloys

Alloys of ABX 3 halide perovskites (HP) exhibit unique phase behavior compared to traditional III-V and II-VI semiconductor alloys used in solar cells. While the latter typically have good mutual miscibility when their mixed components are size matched, and phase-segregate when size mismatched, HP alloys show good miscibility in the dark but can phase-segregate under light. Quantum mechanical calculations described herein reveal light-induced defect formation and migration hold the key. Specifically, the interaction between a halogen vacancy V X with halogen interstitial X i forming together a Frenkel-pair defect emerges as the enabler for phase-segregation in HP alloys. At a threshold bromine composition in the Br-I alloys, the photogenerated holes in the valence band localize, creating thereby a doubly-charged iodine Frenkel-pair (V I + I i ) 2+ . Faster migration of iodine over bromine interstitial into the vacant iodine V I site leads to the formation of iodine-rich and iodine-depleted regions, establishing phase-segregation. Removal of the mobile defects–the agent of segregation–by dark thermal annealing, supplies the opposing force, leading to reversal of phase-segregation. Furthermore, this atomistic understanding can enable some control of the phase-segregation by selecting substituting elements on the B site–such as replacing some Pb by Sn–that are unable to form stable Frenkel defects.

14 SOLAR ENERGY↗
DOE OSTI2021

A Phase 1 Dose-Escalation Trial of Radiation Therapy and Concurrent Cisplatin for Stage II and III Triple-Negative Breast Cancer

Patients with triple-negative breast cancer (TNBC) experience higher local-regional recurrence rates than those with luminal or HER2-positive tumors. This prospective, phase 1B trial was designed to assess the safety and to establish the maximum tolerated dose (MTD) of cisplatin with radiation therapy for women with early-stage TNBC.

62 RADIOLOGY AND NUCLEAR MEDICINE↗
DOE OSTI2021

Planarization of Rough (100) GaAs Substrates via Growth by Hydride Vapor Phase Epitaxy

Wafer reuse techniques help offset the cost of III-V growth substrates by using a single wafer for multiple growths, but costly re-polishing after device removal limits the end benefit. In this work, we present planarization growth by hydride vapor-phase epitaxy (HVPE), a potentially low-cost growth technique, as a method of smoothing rough substrates for subsequent high-quality device growth without the need for polishing. First, we show there is a threshold for allowable substrate roughness without device degradation by comparing devices grown by organometallic vapor-phase epitaxy (OMVPE) on epi-ready polished and pre-polished substrates that did not have the final epi-ready polish. We then demonstrate successful smoothing with HVPE growth on substrates with different surface morphologies, with features ranging from general roughness to large facets. Initial devices grown by HVPE on a pre-polished substate showed no degradation compared to a control wafer, indicating that planarizing rough substrates through HVPE growth is a promising path toward being able to use rough substrates directly for growth, without costly polishing steps.

GaAs↗
DOE OSTI2020

Corrosion behavior of ferritic FeCrAl alloys in simulated BWR normal water chemistry

Ferritic iron-chromium-aluminum (FeCrAl) alloys with varying Cr content were subjected to in-situ irradiation-corrosion with energetic protons or electron beams in pure water with various oxygen concentrations. Oxide microstructure and composition were characterized to compare the corrosion under irradiation with the thermal corrosion in the same water conditions. The dominant effect seems to be the production of H 2 O 2 at the surface by the intense proton and electron beams. The corrosion potential of FeCrAl under BWR-NWC condition is somewhat above the Cr 2 O 3 /CrO 4 2- phase boundary, oxidizing the Cr(III) to Cr(VI) in the outer part of the film, but with some Cr(III) remaining in the interior of the oxide. The beam increases the corrosion potential, significantly reducing Cr(III) content throughout the oxide. Finally, the crystallites on the surface, which form by re-precipitation from solution, do not contain Cr because at low potential Cr(III) is not soluble, and at high potential Cr(VI) is quite soluble.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Micro- and macro-scale characterization of nano-SiO2 reinforced alkali activated slag composites

Highlights: • Combined advanced micro-scale measurements were used to predict properties of NS AASC. • NS enhances both the macro- and micro-mechanical properties of AASC. • Combination of MIP and XCT facilitates a complete characterization of pore structure. • Combined tools at multi-scale provide efficient approaches to optimize material design. - Abstract: The effect of nano-SiO{sub 2} on the micromechanical properties and microstructure of alkali-activated slag cement (AASC) composites was investigated. The investigation involved the use of: (i) nanoindentation to determine the elastic properties of the constituent phases using statistical deconvolution; (ii) scanning electron microscopy equipped with energy-dispersive X-ray spectroscopy and backscattered electrons to identify and characterize the solid phases in the microstructure; and (iii) X-ray computed tomography microscopy to determine the morphology of microscale pores and mercury intrusion porosimetry to measure the volume fraction of the nanoscale pores. The combined use of micro- and macro-scale characterization tools can establish a logical link between the macro-mechanics, microstructure, and micromechanical properties, which provides valuable information aiding the material design of AASC with nanoparticles.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2024

Hydrogenation of calcite and change in chemical bonding at high pressure: Diamond formation above 100GPa

Synchrotron X-ray diffraction (XRD) and Raman spectroscopy in laser heated diamond anvil cells and first principles molecular dynamics (FPMD) calculations have been used to investigate the reactivity of calcite and molecular hydrogen (H 2 ) at high pressures up to 120 GPa. We find that hydrogen reacts with calcite starting below 0.5 GPa at room temperature forming chemical bonds with carbon and oxygen. This results in the unit cell volume expansion; the hydrogenation level is much higher for powdered samples. Single-crystal XRD measurements at 8–24 GPa reveal the presence of previously reported III, IIIb, and VI calcite phases; some crystallites show up to 4% expansion, which is consistent with the incorporation of ≤ 1 hydrogen atom per formula unit. At 40–102 GPa XRD patterns of hydrogenated calcite demonstrate broadened features consistent with the calcite VI structure with incorporated hydrogen atoms. Above 80 GPa, the C–O stretching mode of calcite splits suggesting a change in the coordination of C–O bonds. Laser heating at 110 GPa results in the formation of C–C bonds manifested in the crystallization of diamond recorded by in situ XRD at 300 K and 110 GPa and by Raman spectroscopy on recovered samples commenced with C 13 calcite. We explored several theoretical models, which show that incorporation of atomic hydrogen results in local distortions of CO 3 groups, formation of corner-shared C–O polyhedra, and chemical bonding of H to C and O, which leads to the lattice expansion and vibrational features consistent with the experiments. In conclusion, the experimental and theoretical results support recent reports on tetrahedral C coordination in high-pressure carbonate glasses and suggest a possible source of the origin of ultradeep diamonds.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗