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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 757 records · Page 42
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Impact of sodium vanadium oxide (NaV 3 O 8 , NVO) material synthesis conditions on charge storage mechanism in Zn-ion aqueous batteries

The electrochemical charge storage of sodium vanadate (NaV 3 O 8 or NVO) cathodes in aqueous Zn-ion batteries has been hypothesized to be influenced by the inclusion of structural water for facilitating ion transfer in the material. Materials properties considered important (morphology, crystallite and particle size, surface area) are systematically studied herein through investigation of two NVO materials, NaV 3 O 8 ·0.34H 2 O [NVO(300)] and NaV 3 O 8 ·0.05H 2 O [NVO(500)], with different water content, acicular morphologies with different size and surface area achieved via post-synthesis heat treatment. The electrochemistry of the two materials was evaluated in aqueous Zn-ion cells with 2 M ZnSO 4 electrolyte using cyclic voltammetry, galvanostatic cycling, and rate capability testing. Furthermore, the thinner NVO(300) nanobelts (0.13 μm) demonstrate greater specific capacities and higher effective diffusion coefficients relative to the thicker NVO(500) nanorods. Notably however, while cells containing NVO(500) deliver lower specific capacity, they demonstrate enhanced capacity retention with cycling. The structural changes accompanying oxidation and reduction are elucidated via ex situ X-ray diffraction, transmission electron microscopy, and operando V K-edge X-ray absorption spectroscopy (XAS), where NVO material properties are shown to influence the ion insertion. Operando XAS verified that electron transfer corresponds directly to change in vanadium oxidation state, affirming vanadium redox as the governing electrochemical process.

25 ENERGY STORAGE↗
DOE OSTI2022

CO oxidation on MgAl 2 O 4 supported Ir n : activation of lattice oxygen in the subnanometer regime and emergence of nuclearity-activity volcano

CO oxidation on Pt group metals is affected by the metal size and reducibility of the oxide support. In this study, we report that Ir supported on MgAl 2 O 4 , traditionally considered non-reducible, exhibits properties similar to reducible oxides when the Ir size is in the subnanometer regime. To show this effect, we synthesized subnanometer Ir clusters and compared their properties to single atoms and nanoparticles (1–1.5 nm). The CO oxidation activity is highest on Ir 0.6–0.8nm while showing distinctly different reaction orders in CO and O 2 (0, +0.4), than single atoms (1, 0) and nanoparticles (–1, +1). Microcalorimetry, in situ X-ray absorption, and infrared spectroscopies show that the CO-saturated Ir 0.6–0.8nm clusters could adsorb and activate O 2 despite binding CO more strongly than nanoparticles. Density functional theory calculations on CO saturated Ir 4 clusters suggest that the increased activity is due to the ability to activate O 2 on oxygen vacancies at the Ir–MgAl 2 O 4 interface. The findings show the important effect of the metal nuclearity on the support and catalyst properties and can guide future design of CO oxidation catalysts.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

A novel symmetric pyrazine (pyz)-bridged uranyl dimer [UO 2 Cl 3 (H 2 O)(Pyz) 0.5 ] 2 2– : synthesis, structure and computational analysis

In this work, we report on the synthesis of (HPyz + ) 2 [UO 2 Cl 3 (H 2 O)(Pyz) 0.5 ] 2 ·2H 2 O which features a novel pyrazine-bridged uranyl dimer, [UO 2 Cl 3 (H 2 O)(Pyz) 0.5 ] 2 2– . A rigorous computational and experimental analysis of this compound was performed to fully explore the influence of coordination on the electronic structure and potential charge-transfer characteristics of this dimer, revealing a delocalized π-system across the bridging pyrazine and the axial components of both uranyl centers. Electrostatic surface potentials, used to rationalize the observed assembly, indicate a decreased basicity of the uranyl oxo versus [UO 2 Cl 4 ] 2– , and signify a lessened capacity for the terminal –yl oxos of the [UO 2 Cl 3 (H 2 O)(Pyz) 0.5 ] 2 2– dimer to participate in supramolecular assembly. A combined density functional theory (DFT) and quantum theory of atoms in molecules (QTAIM) analysis further evidenced an increase in U═O bond strengths within the dimer, which is supported by a blue shift in the characteristic Raman-active uranyl symmetric stretch (ν 1 ) with respect to the more typically observed [UO 2 Cl 4 ] 2– .

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

Vertical van der Waals heterojunction diodes comprising 2D semiconductors on 3D β-Ga 2 O 3

Wide bandgap semiconductors such as gallium oxide (Ga 2 O 3 ) have attracted much attention for their use in next-generation high-power electronics. Although single-crystal Ga 2 O 3 substrates can be routinely grown from melt along various orientations, the influence of such orientations has been seldom reported. Further, making rectifying p–n diodes from Ga 2 O 3 has been difficult due to lack of p-type doping. In this study, we fabricated and optimized 2D/3D vertical diodes on β-Ga 2 O 3 by varying the following three factors: substrate planar orientation, choice of 2D material and metal contacts. Furthermore, the quality of our devices was validated using high-temperature dependent measurements, atomic-force microscopy (AFM) techniques and technology computer-aided design (TCAD) simulations. Our findings suggest that 2D/3D β-Ga 2 O 3 vertical heterojunctions are optimized by substrate planar orientation (–201), combined with 2D WS 2 exfoliated layers and Ti contacts, and show record rectification ratios (>10 6 ) concurrently with ON-Current density (>10 3 A cm –2 ) for application in power rectifiers.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Li–Mn–O Li-rich cation disordered rock-salt cathode materials do not undergo reversible oxygen redox during cycling

An in-depth study of “Li 4 Mn 2 O 5 ”, a nanocomposite of Li 2 O and Li 4-x Mn 2 O 5 with a disordered rock salt structure (LMO), was conducted to determine the origins of the observed anomalously high charge and discharge capacity in lithium cells, which can exceed 350 mA h g -1 . Using soft and hard X-ray absorption spectroscopy (XAS), mapping of resonant inelastic X-ray scattering (mRIXS), and X-ray Raman spectroscopy (XRS), it was determined that electrochemical decomposition of Li 2 O upon charge and reduction of Mn to below 3+ during discharge is responsible for the capacities that are observed, with no evidence of contributions from reversible oxygen redox. Here, the over-reduction is exacerbated when charging limits of 4.5–4.8 V are used due to side reactions between electrolytic solution and the highly oxidized active material. These side reactions result in dissolution of Mn at room temperature and release of oxygen and other gases during initial cycles, which, in turn, cause rapid capacity fading. This is accompanied by evolution of the voltage profile upon cycling towards one that resembles that of manganese oxide spinels. The cycling behavior can be improved somewhat by reducing the upper voltage limit, although this results in a diminishment of the discharge capacities below 200 mA h g -1 . By adding various amounts of spinel LiMn 2 O 4 during synthesis, it was possible to produce LMOs with rock salt structures having significantly improved cycling behavior but still having capacities in excess of 250 mA h g -1 . An optimized modified material also exhibits better rate capability and much less gas evolution during initial cycles than the unmodified LMO. Interestingly, as-made modified materials generally exhibited lower than expected average Mn oxidation states attributable to oxygen loss during the synthesis process, as well as higher capacities than expected based on their manganese contents. The oxygen loss during processing may reduce the activity of the remaining oxygen and account for the lower reactivity of the spinel-modified material.

25 ENERGY STORAGE↗
DOE OSTI2024

Synthesis and symmetry of perovskite oxynitride CaW(O,N) 3

Perovskite oxynitrides, in addition to being promising electrocatalysts and photoabsorbers, present an interesting case study in crystal symmetry. Full or partial ordering of the O and N anions affects global symmetry and influences material performance and functionality; however, anion ordering is challenging to detect experimentally. In this work, we synthesize a novel perovskite oxynitride CaW(O,N) 3 and characterize its crystal structure using both X-ray and neutron diffraction. Through co-refinement of the diffraction patterns with a range of literature and theory-derived model structures, we demonstrate that CaW(O,N) 3 adopts an orthorhombic Pnma average structure and exhibits octahedral distortion with evidence for preferred anion site occupancy. However, through comparison with a large, low-symmetry unit cell, we identify the presence of disorder that is not fully accounted for by the high-symmetry model. We compare CaW(O,N) 3 with SrW(O,N) 3 to demonstrate the broader presence of such disorder and identify contrasting features in the electronic structures. This work signifies an updated perspective on the inherent crystal symmetry present in perovskite oxynitrides.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Mechanochemical α to β phase transition of U 3 O 8

Recognized as the most stable phase of uranium oxide, α-U 3 O 8 is widely used throughout the nuclear fuel cycle for safe storage and transportation. There is, however, a lack of understanding of the thermodynamic relationship between α-U 3 O 8 and its polymorph, β-U 3 O 8 . This research contributes new knowledge regarding the kinetics and mechanism of a previously described mechanochemical phase transition between the α- and β-U 3 O 8 polymorphs to improve the understanding of their thermodynamic relationship. In this work, tumble milling of α-U 3 O 8 using different milling media shows an ingrowth of the β-phase over time, with an observed correlation between media density, percent conversion and lattice strain. Anisotropic peak broadening observed within collected X-ray diffraction powder patterns suggests the preservation of uranium polyhedral layered sheets throughout the milling process. Preservation of the sheets implies a shear-induced slip mechanism occurring through in-plane shifting of uranium polyhedra along lattice planes perpendicular to the polyhedral sheets.

Roach, Jordan M. [Oak Ridge National Laboratory (O↗
DOE OSTI2025

Thermal decomposition of neptunyl ammonium nitrate: mechanistic insights and structural characterization of the Np 2 O 5 intermediate phase

Neptunium (Np) possesses a rich and unique chemistry that often diverges from other actinide elements yet remains relatively underexplored compared with the other light actinides. A resurgence of interest in Np has been spurred by the application of 237 Np for plutonium-238 ( 238 Pu) production for use in radioisotope thermoelectric generators (RTGs), necessitating evaluation of Np chemical reactions and materials. The work presented here studied the thermal decomposition of neptunyl ammonium nitrate (NH 4 Np VI O 2 (NO 3 ) 3 ) for synthesis of neptunium dioxide (NpO 2 ), which is the target material used for production of 238 Pu. Additionally, structural characterization of the intermediate solid Np pentoxide (Np 2 O 5 ) was performed. Advanced solid-state characterization techniques, including simultaneous thermal analysis (STA), powder X-ray diffraction (pXRD), Raman spectroscopy, and density functional theory (DFT) modeling have been combined to study the reaction pathways. Analysis revealed that NH 4 Np VI O 2 (NO 3 ) 3 thermally decomposes to a proposed neptunyl nitrate intermediate, followed by Np 2 O 5 and finally NpO 2 , all within the temperature range of 150 °C–600 °C. Further characterization of the pentoxide intermediate provided the first Raman spectra of pure-phase Np 2 O 5 and associated DFT modeling confirmed Raman peak assignments for this phase. These findings provide mechanistic information to advance production of the critical radioisotope 238 Pu and advance the state of knowledge on Np materials chemistry using modern characterization techniques.

Lawson, Kathryn M. [Oak Ridge National Laboratory ↗
DOE OSTI2025

Electrochemical production of H 2 O 2 on palladium-based clusters driven by metal–support interaction

Utilizing palladium (Pd) clusters as active sites offers a promising route to minimize noble metal consumption in electrochemical hydrogen peroxide (H 2 O 2 ) production. In this work, we present a synthesis approach for anchoring Pd-based clusters onto carbon-supported CeO 2 nanosubstrates to enable efficient H 2 O 2 generation via the two-electron oxygen reduction reaction (ORR) pathway. By systematically adjusting Pd loading, we evaluated its impact on H 2 O 2 yield and production rate. The catalyst with the lowest Pd content (0.027 wt%) exhibited outstanding performance, achieving 97% H 2 O 2 selectivity, 94.2 faradaic efficiency at 0.7 V vs. RHE, and a peak production rate of 195.8 mol g Pd −1 h −1 . A formulation containing 0.35 wt% Pd delivered a peak ORR mass activity nearly three times as high as that of commercial 10 wt% Pd/C, while retaining comparable electrochemical stability. These enhancements are attributed to synergistic effects among isolated PdO clusters, CeO 2 nanocrystals, and the conductive carbon support, which together facilitate oxygen adsorption and promote the two-electron ORR pathway. Analysis after accelerated durability testing further revealed a tendency toward cluster agglomeration and mass transfer from smaller to larger nanocrystals, indicative of a coarsening mechanism. Overall, this study underscores the promise of low-Pd PdO–CeO 2 –carbon hybrid catalysts for scalable and efficient H 2 O 2 electrosynthesis, while highlighting stability as a critical area for future improvement.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Pressure-induced transformation of Nb 2 O 5 under shock compression from first principles

Ab initio molecular dynamics (AIMD) simulations were carried out to investigate the equation of state of Nb 2 O 5 and its pressure-density relationship under shock conditions. Here, the focus of this study is on the monoclinic B-Nb 2 O 5 (C2/c) polymorph. Enthalpy calculations from AIMD trajectories at 300 K show that the pressure-induced transformation between the thermody-namically most stable crystalline monoclinic parent phase H-Nb 2 O 5 (P2/m) and B-Nb 2 O 5 occurs at ~1.9 GPa. This H→B transition is energetically more favorable than the H→L(Pmm2) pressure-induced transition recently observed at ~5.9-9.0 GPa. The predicted shock properties of Nb 2 O 5 polymorphs are also compared to their Nb and NbO 2 counterparts to assess the impact of niobium oxidation on shock response.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Raman studies of hydrogen trapped in As 4 O 6 ·2H 2 at high pressure and low temperature

In this work, Raman spectroscopic measurements of the arsenolite–hydrogen inclusion compound As 4 O 6 ·2H 2 were performed in diamond anvil cells at high pressure and variable temperature down to 80 K. The experimental results were complemented by ab initio molecular dynamics simulations and phonon calculations. Observation of three hydrogen vibrons in As 4 O 6 ·2H 2 is reported in the entire temperature and pressure range studied (up to 24 GPa). While the experiments performed with protium and deuterium at variable temperatures allowed for the assignment of two vibrons as Q 1 (1) and Q 1 (0) transitions of ortho and para spin isomers of hydrogen trapped in the inclusion compound, the origin of the third vibron could not be unequivocally established. Low-temperature spectra revealed that the lowest-frequency vibron is actually composed of two overlapping bands of A g and T 2g symmetries dominated by H 2 stretching modes as predicted by our previous density functional theory calculations. We observed low-frequency modes of As 4 O 6 ·2H 2 vibrations dominated by H 2 “librations,” which were missed in a previous study. A low-temperature fine structure was observed for the J = 0 → 2 and J = 1 → 3 manifolds of hydrogen trapped in As 4 O 6 ·2H 2 , indicating the lifting of degeneracy due to an anisotropic environment. A non-spherical distribution was captured by molecular dynamics simulations, which revealed that the trajectory of H 2 molecules is skewed along the crystallographic $\langle$111$\rangle$ direction. Last but not least, low-temperature synchrotron powder x-ray diffraction measurements on As 4 O 6 ·2H 2 revealed that the bulk structure of the compound is preserved down to 5 K at 1.6 GPa.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

Deep level transient spectroscopy investigation of ultra-wide bandgap ($\bar201$) and ($001$) β -Ga 2 O 3

Here, this work reports on a comprehensive examination of the electrical and thermal properties of vertical Schottky diodes fabricated on ($\bar201$) and ($001$)-oriented samples of β-Ga 2 O 3 . The temperature-dependent current–voltage (I–V) and capacitance–voltage (C–V) data were gathered and analyzed down to 60 K. Deep level transient spectroscopy (DLTS) was used to study bulk and interface defects in the two materials from approx. 325 K down to 60 K. In the bulk ($\bar201$) material, an electron trap was observed at E C -0.46 eV, with a capture cross section of 1.6 x 10 -14 cm 2 and a lambda-corrected maximum trap density of 9.08 x 10 15 cm -3 . These results and others indicate that the electron trap is a strong candidate for the well-known E1 defect in β-Ga 2 O 3 based on recent investigations. Additionally, in the ($\bar201$) material, the smooth modulation typical of interface states is evident at temperatures below 275 K. The ($001$) samples manifested what is likely the E2* electron trap at E C -0.68 eV, with a capture cross section of 1.64 x 10 -15 cm 2 and a lambda-corrected maximum trap density of 8.85 x 10 15 cm -3 . The presence of the E2* defect, in particular, is a contrast to the findings of recent DLTS investigations on β-Ga 2 O 3 , which report that E2* emerged only after low-energy proton irradiation. These results help to further map out the defect signatures found in β-Ga 2 O 3 materials, which are of vital importance in the design and fabrication of future β-Ga 2 O 3 devices.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2020

Structural transition and recovery of Ge implanted β -Ga 2 O 3

Ion implantation-induced effects were studied in Ge implanted β-Ga 2 O 3 with the fluence and energy of 3 × 10 13 cm -2 /60 keV, 5 × 10 13 cm -2 /100 keV, and 7 × 10 13 cm -2 /200 keV using analytical electron microscopy via scanning/transmission electron microscopy, electron energy loss spectroscopy, and precession electron diffraction via TopSpin. Imaging shows an isolated band of damage after Ge implantation, which extends ~130 nm from the sample surface and corresponds to the projected range of the ions. Electron diffraction demonstrates that the entirety of the damage band is the κ phase, indicating an implantation-induced phase transition from β to κ-Ga 2 O 3 . Post-implantation annealing at 1150 °C for 60 s under the O 2 atmosphere led to a back transformation of κ to β; however, an ~17 nm damage zone remained at the sample surface. Despite the back transformation from κ to β with annealing, O K-edge spectra show changes in the fine structure between the pristine, implanted, and implanted-annealed samples, and topspin strain analysis shows a change in strain between the two samples. These data indicate differences in the electronic/chemical structure, where the change of the oxygen environment extended beyond the implantation zone (~130 nm) due to the diffusion of Ge into the bulk material, which, in turn, causes a tensile strain of 0.5%. This work provides a foundation for understanding of the effects of ion implantation on defect/phase evolution in β-Ga 2 O 3 and the related recovery mechanism, opening a window toward building a reliable device for targeted applications.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Zinc–hydrogen and zinc–iridium pairs in β-Ga 2 O 3

Zinc-doped monoclinic gallium oxide (β-Ga 2 O 3 :Zn) has semi-insulating properties that could make it a preferred material as a substrate for power devices. In this work, infrared and UV/Visible spectroscopy were used to investigate the defect properties of bulk β-Ga 2 O 3 :Zn crystals. As-grown crystals contain a single O-H stretching mode at 3486.7 cm -1 due to a neutral ZnH complex. A deuterium-annealed sample displays the corresponding O-D stretching mode at 2582.9 cm -1 , confirming the O-H assignment. A strong Ir 4+ electronic transition at 5147.6 cm -1 is also observed, along with sidebands attributed to ZnIr pairs. These sidebands show distinct differences compared with Mg-doped samples; most importantly, several peaks are attributed to Ir 4+ paired with a Zn on the tetrahedral Ga(I) site. Annealing under an oxygen atmosphere produced insulating material with a resistance above 1 TΩ.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Deep level defects in low-pressure chemical vapor deposition grown (010) β-Ga 2 O 3

This study provides the full-bandgap evaluation of defect state distributions in beta phase gallium oxide (β-Ga 2 O 3 ) grown by low-pressure chemical vapor deposition (LPCVD) on (010) β-Ga 2 O 3 substrates at high growth of up to 20 µm/h. Deep-level optical spectroscopy and deep-level transient spectroscopy measurements applied to Ni/β-Ga 2 O 3 Schottky diodes revealed the presence of a previously unreported defect state at E C -3.6 eV, which dominated the overall trap distribution in LPCVD grown material. However, states at E C -0.8 eV, E C -2.0 eV, and E C -4.4. eV were also detected, similar to prior studies on β-Ga 2 O 3 grown by other methods, with similar or lower concentrations for the LPCVD samples. The E C -0.8 eV and E C -2.0 eV states were previously connected to residual Fe impurities and gallium vacancies, respectively. The total concentration of traps in the LPCVD material was on par with or lower than the state-of-the-art metal–organic chemical vapor deposition-grown materials despite the much higher growth rate, and the distribution of states showed negligible dependence on SiCl 4 flow rate and doping concentration. These results demonstrate that the high growth rate of LPCVD-grown β-Ga 2 O 3 is very promising for achieving thick, low defect density, and high-quality layers needed for multi-kV device applications.

36 MATERIALS SCIENCE↗
DOE OSTI2023

The kinetics of the PuO 2 to Pu 2 O 3 conversion

Here in an oxidizing environment, the oxide formed on plutonium (Pu) metal is composed of a plutonium dioxide (PuO 2 ) top layer and a thin cubic plutonium sesquioxide (Pu 2 O 3 ) middle layer. In a reducing environment, the PuO 2 layer auto-reduces to cubic Pu 2 O 3 . The speed and extent of this conversion depend on the combination of temperature and time. While PuO 2 provides a strong diffusion barrier against unwanted Pu corrosion by gaseous species (like hydrogen), Pu 2 O 3 does not, since its crystal structure has chains of oxygen vacancies. The kinetics of the PuO 2 reduction are, therefore, of fundamental interest and enable researchers to better protect Pu from corrosion. In this report, the oxygen-diffusion-limited kinetics of the dioxide to sesquioxide conversion were obtained by dynamically heating a PuO 2 -covered Pu sample from 294 to 418 K in a high-vacuum vessel equipped with an in situ spectroscopic ellipsometer. The physical/chemical constraints in the conversion process were combined with the ellipsometry method of multi-sample analysis to track the percentage of PuO 2 and to compute the extent of Pu 2 O 3 formation. The resulting diffusion coefficients were compared against and then combined with complementary literature data to produce a comprehensive set of kinetic parameters for reliably modeling oxide conversion over a larger temperature range than spanned by prior studies. The extracted thermal activation energy barrier (43.7 kJ/mol) and pre-exponential factor (5.0 × 10 -10 cm 2 /s) for the oxygen-diffusion-limited process can be used to accurately model the PuO 2 to Pu 2 O 3 transformation in vacuum and/or inert gas applications.

36 MATERIALS SCIENCE↗
DOE OSTI2024

A machine learning approach for determining temperature-dependent bandgap of metal oxides utilizing Allen–Heine–Cardona theory and O’Donnell model parameterization

To evaluate the high temperature sensing properties of metal oxide and perovskite materials suitable for use in combustion environments, it is necessary to understand the temperature dependence of their bandgaps. Although such temperature-driven changes can be calculated via the Allen–Heine–Cardona (AHC) theory, which assesses electron–phonon coupling for the bandgap correction at given temperatures, this approach is computationally demanding. Another approach to predict bandgap temperature-dependence is the O’Donnell model, which uses analytical expressions with multiple fitting parameters that require bandgap information at 0 K. This work employs data-driven Gaussian process regression (GPR) to predict the parameters employed in the O’Donnell model from a set of physical features. We use a sample of 54 metal oxides for which density functional theory has been performed to calculate the bandgap at 0 K, and the AHC calculations have been carried out to determine the shift in the bandgap at non-zero temperatures. As the AHC calculations are impractical for high-throughput screening of materials, the developed GPR model attempts to alleviate this issue by predicting the O'Donnell parameters purely from physical features. To mitigate the reliability issues arising from the very small size of the dataset, we apply a Bayesian technique to improve the generalizability of the data-driven models as well as quantify the uncertainty associated with the predictions. The method captures well the overall trend of the O’Donnell parameters with respect to a reduced feature set obtained by transforming the available physical features. Quantifying the associated uncertainty helps us understand the reliability of the predictions of the O’Donnell parameters and, therefore, the bandgap as a function of temperature for any novel material.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Impact of metal diffusion, lattice distortions, native defects, and ambient on dielectric breakdown in Ni–Ga 2 O 3 Schottky diodes

Ga 2 O 3 unipolar devices are of high interest due to their ~8 MV/cm predicted breakdown fields, which have not yet been achieved due to premature device failure. Pre- and post-failure defect analysis of Ni–Ga 2 O 3 Schottky diodes in ultrahigh vacuum (UHV) and air were performed using depth-resolved cathodoluminescence, high angle annular dark field scanning transmission electron microscopy, and energy dispersive x-ray analysis to understand the physical mechanisms that precede premature breakdown. The breakdown voltage in UHV was dramatically reduced by nearly 40% compared with the breakdown in air. This reduction in the breakdown voltage correlated with post-breakdown differences in Ni distribution, indicating that the coordination and bonding of Ni contribute strongly to electrical behavior in Ni–Ga 2 O 3 Schottky diodes. Breakdown studies in UHV revealed that Ni diffuses away more from the metal–semiconductor interface than with air breakdown, where Ni localizes more near the interface, indicative of the preferential formation of a Ni oxide under O-poor conditions. These measurements also identified the formation of divacancy-interstitial complexes and their characteristic luminescence signature ~150 nm from the interface, the densities of which correlated with breakdown fields. These findings show that electric-field-induced degradation occurs via the rearrangement of native point defects, which act as an additional precursor to device failure. Macroscopically, they show the impact of both vacuum conditions and metal reactivity on Ga 2 O 3 device fabrication.

36 MATERIALS SCIENCE↗