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At least 757 records · Page 42

Ultrasonic Characterization of Ethylene Vinyl Acetate (EVA) Crosslinking for Quality Assurance and Lamination Process Control (US-Xlink)

Module makers strive to cut lamination processing times to enhance production throughput and reduce costs. If overdone, this might lead to poor EVA quality due to incomplete EVA crosslinking and a large concentration of potentially harmful reactants. Those deficiencies are frequently missed during production quality testing as initially their impact on power output is small. Additionally, the crosslinking agent is frequently inhomogeneously dispersed across the EVA foils such that local destructive characterization procedures such as differential scanning calorimetry (DSC), Soxhlet extraction, swelling methods, or mechanical tests provide only a limited amount of information. However, these defects and inhomogeneities can become considerably more important during field operation, dramatically reducing long-term power yield, and increasing LCOE. Examples of typical long-term module degradation modes relating to poor lamination process conditions include cell breakage, corrosion of the metallization, delamination, and local quality deficiencies. To provide reliable material characterization in a manufacturing setting, we devised a non-destructive technology that uses ultrasound to evaluate the quality of interface adhesion and the degree of crosslinking. As a calibration reference, DSC measurements were employed. Although the potential of ultrasonic approaches for this purpose has already been noted, those previous methods were generally limited to local qualitative measurements. Furthermore, variations in EVA thickness and temperature had a substantial impact on them. The solution we propose solves these limitations by employing ultrasonic absorption rather than relying solely on sound velocity data.

14 SOLAR ENERGY↗

Solutal Convection Around Growing Protein Crystal and Diffusional Purification in Space

At least some protein crystals were found to preferentially trap microheterogeneous impurities. The latter are, for example, dimmer molecules of the crystallizing proteines (e.g. ferritin, lysozyme), or the regular molecules on which surfaces small molecules or ions are adsorbed (e.g. acetilated lysozyme) and modi@ molecular charge. Impurities may induce lattice defects and deteriorate structural resolution. Distribution of impurities between mother solution and gorwing crystal is defined by two interrelated distribution coefficients: kappa = rho(sup c, sub 2) and K = (rho(sup c, sub 2)/rho(sup c, sub 1)/rho(sub 2)/rho(sub 1). Here, rho(sub 2), rho(sub 1) and rho(sup c, sub 2) are densities of impurity (2) and regular protein (1) in solution at the growing interface and within the crystal ("c"). For the microheterogeneous impurities studied, K approx. = 2 - 4, so that kappa approx. - 10(exp 2) - 10(exp 3), since K = kappa (rho(sub 1)/rho(sup c, sub 1) and protein solubility ratio rho(sub 1)/rho(sub=p c, sub 2) much less than 1. Therefore, a crystal growing in absence of convection purifies mother solution around itself, grows cleaner and, probably, more perfect. If convection is present, the solution flow permanently brings new impurities to the crystal. This work theoretically addressed two subjects: 1) onset of convection, 2) distribution of impurities.

Lee, Chun P.↗

Nanometer Resolution Structure‐Emission Correlation of Individual Quantum Emitters via Enhanced Cathodoluminescence in Twisted Hexagonal Boron Nitride

Understanding the atomic structure of quantum emitters, often originating from point defects or impuritie, is essential for designing and optimizing materials for quantum technologies such as quantum computing, communication, and sensing. Despite the availability of atomic-resolution scanning transmission electron microscopy and nanoscale cathodoluminescence microscopy, experimentally determining the atomic structure of individual emitters is challenging due to the conflicting needs for thick samples to generate strong cathodoluminescence signals and thin samples for structural analysis. To overcome this challenge, significantly enhanced cathodoluminescence at twisted interfaces is leveraged to achieve sub-nanometer localization precision for the first time in mapping individual quantum emitters in carbon-implanted hexagonal boron nitride. This unprecedent spatial sensitivity, together with correlative electron energy loss spectroscopy quantitative scanning transmission electron microscopy imaging, and first principles density functional theory calculations, enables the identification of the atomic structure of the 440 nm blue emitter in hexagonal boron nitride as a substituted vertical carbon dimer. Building on the atomic structure insights, nanoscale spatially precise creation of blue emitters is demonstrated by electron beam irradiation of carbon-coated hexagonal boron nitride. This advancement in correlating atomic structures with optical properties lays the foundation for a deeper understanding and precise engineering of quantum emitters, significantly advancing the development of cutting-edge quantum information technologies.

2D material↗

Highly efficient Pt catalyst on newly designed CeO 2 -ZrO 2 -Al 2 O 3 support for catalytic removal of pollutants from vehicle exhaust

Pt-CeO 2 catalysts have been widely studied for the vehicle emission control. Designing novel CeO 2 based supports with improved physical-chemical properties has become a research hotspot to further promote the catalytic performance and stability of Pt-CeO 2 catalysts. In this work, through utilizing a unique, two-step incipient wetness impregnation (T-IWI) method for ceria-zirconia-alumina (CZA-T) support preparation, a Pt single site catalyst (Pt/CZA-T) with excellent thermal stability was synthesized. Higher oxidation activity and Oxygen storage capacity (OSC) were achieved on activated Pt/CZA-T, comparing to Pt catalysts on regular CeO 2 /Al 2 O 3 (Pt/CA) and one-step prepared CeZrO x /Al 2 O 3 (Pt/CZA). Via the modification of hydrophilic/hydrophobic properties of γ-Al 2 O 3 by this unique T-IWI method, finer Ce 0.9 Zr 0.1 O 2 particles with higher density of surface defects were formed on CZA-T, on which a higher Pt dispersion and stronger Pt-O-Ce interaction were achieved. Upon activation, smaller, well-dispersed Pt clusters on CZA-T were generated. It was concluded that the CO oxidation performance and OSC were highly related to the size of Pt clusters on different supports that we have developed. Finally, more Pt sites located at Pt cluster-CeZrO x interfaces, which were the real active sites, were responsible for the highest OSC function and CO oxidation activity of activated Pt/CZA-T catalyst.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Optical quantum nondemolition measurement of a single rare earth ion qubit

Optically-interfaced spins in the solid state are a promising platform for quantum technologies. A crucial component of these systems is high-fidelity, projective measurement of the spin state. Here, we demonstrate single-shot spin readout of a single rare earth ion qubit, Er3+, which is attractive for its telecom-wavelength optical transition and compatibility with silicon nanophotonic circuits. In previous work with laser-cooled atoms and ions, and solidstate defects, spin readout is accomplished using fluorescence on an optical cycling transition; however, Er3+ and other rare earth ions generally lack strong cycling transitions. We demonstrate that modifying the electromagnetic environment around the ion can increase the strength and cyclicity of the optical transition by several orders of magnitude, enabling single-shot quantum nondemolition readout of the ion’s spin with 94.6% fidelity. We use this readout to probe coherent dynamics and relaxation of the spin.

42 ENGINEERING↗

External charge compensation in etched gallium nitride measured by x-ray photoelectron spectroscopy

Electronic states at GaN surfaces and at regrowth and heteroepitaxy interfaces inhibit electronic device performance. Understanding electronic state configuration at the GaN surface is, therefore, crucial for the development of GaN-based devices, which are currently of considerable interest in power electronic applications. GaN and other wurtzite III-nitrides possess large spontaneous polarization along the c-axis, producing a bound sheet charge at the surface, which affects the electronic state configuration through the formation of internal and external compensation charges. Defects induced by conventional plasma-based dry etching methods may inhibit the internal screening of this bound charge and thus increase the concentration of external charged states. The surface band bending of n-type Ga-face GaN (0001) was measured with x-ray photoelectron spectroscopy after inductively coupled plasma etching to investigate the impact of dry etching on external charge compensation. GaN samples were etched using inductively coupled plasma with varying rf power and a novel plasma-enhanced atomic layer etching method using an oxidation, fluorination, and ligand-exchange mechanism. The band bending varied from 0.0 to 0.8 ± 0.1 eV for the samples measured.

Hatch, Kevin A. (ORCID:0000000283118623)↗

Aqueous Titania Interfaces

Water–metal oxide interfaces are central to many phenomena and applications, ranging from material corrosion and dissolution to photoelectrochemistry and bioengineering. In particular, the discovery of photocatalytic water splitting on TiO 2 has motivated intensive studies of water-TiO 2 interfaces for decades. So far, a broad understanding of the interaction of water vapor with several TiO 2 surfaces has been obtained. However, much less is known about liquid water–TiO 2 interfaces, which are more relevant to many practical applications. Probing these complex systems at the molecular level is experimentally challenging and is sometimes possible only through computational studies. This review summarizes recent advances in the atomistic understanding, mostly through computational simulations, of the structure and dynamics of interfacial water on TiO 2 surfaces. The main focus is on the nature, molecular or dissociated, of water in direct contact with low-index defect-free crystalline surfaces. The hydroxyls resulting from water dissociation are essential in the photooxidation of water and critically affect the surface chemistry of TiO 2.

density functional theory↗

Fast-Charging Li 4 Ti 5 O 12 Anode Driven by Light

Lithium-ion batteries with fast charging capabilities are crucial for widespread adoption of electric vehicles, as they will increase acceptance of the technology and reduce range anxiety for drivers. To achieve this, advanced fast charging technologies and alternative methods to enhance the slow electrochemical processes are desperately required. This study applied light-emitting diode (LED) photo-assisted fast charging to Li 4 Ti 5 O 12 (LTO), a large bandgap cubic spinel material, to enhance charging speed through electronic-structure coupling. UV LED-generated light irradiation on to the electrode interface boosted the ion diffusion and lithium cation addition by a factor of 1.3 during electrochemical lithiation, resulting in a 30% decrease in charging time under ambient conditions. Red LED light was not effective in accelerating the reaction as it does not provide sufficient energy. The first-principles calculations support the concept that UV illumination generates charges by overcoming the material’s bandgap and effectively reducing it through the introduction of additional titanium defect states.

25 ENERGY STORAGE↗

Pulling thin single crystal silicon wafers from a melt: The new leading-edge solar substrate

The Floating Silicon Method (FSM) has been established as a viable, stable method for growing single crystal ribbons directly from a silicon melt. With intense helium jet cooling to drive the linear progress of a [111] facet, pulled in the <110> direction, ribbons in the 0.6 – 3.0 mm thickness range can be grown at linear growth rates from 0.3 mm/s to >6 mm/s as reported in the literature. We report on recent progress towards growing (100) oriented ribbons with a net thickness of less than 200 microns and a ribbon width up to 18 cm using a stable, continuous process in the Leading Edge prototype furnace. Here, the 3D details of the single crystal growth are explained by extending the mechanics of the Limit Cycle Theory, with novel Internal Side Effect morphology described by a proposed Facet Flow Theory. Grown-in crystalline defect distributions are described as well as values of critical impurities like oxygen, carbon, dopants, and metals that are relevant for use as wafers for solar cells.

14 SOLAR ENERGY↗

Role of tilt grain boundaries on the structural integrity of WSe 2 monolayers

Transition metal dichalcogenides (TMDCs) are potential materials for future optoelectronic devices. Grain boundaries (GBs) can significantly influence the optoelectronic properties of TMDC materials. Here, we have investigated the mechanical characteristics of tungsten diselenide (WSe 2 ) monolayers and failure process with symmetric tilt GBs using ReaxFF molecular dynamics simulations. In particular, the effects of topological defects, loading rates, and temperatures are investigated. We considered nine different grain boundary structures of monolayer WSe 2 , of which six are armchair (AC) tilt structures, and the remaining three are zigzag (ZZ) tilt structures. Our results indicate that both tensile strength and fracture strain of WSe 2 with symmetric tilt GBs decrease as the temperature increases. We revealed an interfacial phase transition for high-angle GBs reduces the elastic strain energy within the interface at finite temperatures. Furthermore, brittle cracking is the dominant failure mode in the WSe 2 monolayer with tilted GBs. WSe 2 GB structures showed more strain rate sensitivity at high temperatures than at low temperatures.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

The role of deviatoric stress and dislocations on the α to ω phase transformation in Ti

Under extreme conditions, α-Ti becomes unstable and transforms either into β-Ti at high temperature or into ω-Ti at high pressure. In what concerns the α to ω phase transformation (PT), there has been a wide range of experimentally reported transition pressures from approximately 2 to 15 GPa at room temperature. Deviatoric stresses and internal defects are often assumed to be the root cause of this variation. Here, in this study, these postulates are revisited using both continuum mechanics and molecular dynamics (MD) simulations. First, a simple continuum model, assuming linear elasticity and isotropic plasticity, is developed to describe the effects of applied stress and dislocations on the stability of an ω nucleus in an infinite α domain. Second, a new MD simulation method is developed to generate an ω nucleus in the α domain utilizing the displacement field identified from the topological analysis. Results from MD simulations show that despite the fact that phase diagrams typically delineate the limits between two phases in terms of only P and T, deviatoric stress promotes the α to ω phase transformation by reducing the critical radius above which an ω nucleus is stable. Furthermore, the required deviatoric stress to nucleate and stabilize a nanoscale ω nucleus is likely emanating from the internal stress of defects such as dislocations. The MD-informed micromechanics models are used to identify favorable configurations where dislocations help favor the α to ω transformation. These configurations show that the interaction with a basal or prismatic dislocation reduces the critical radius of a ω nucleus by about 10 or 16 %, respectively. In addition, prismatic edge dislocations are found to promote the growth of ω nucleus when interacting with the ($\bar{1}$$\bar{1}$20) α //(0001) ω interface. Importantly, a simple model of the arrival of dislocation at an ω nucleus suggests that PT does not necessarily require a pile-up to be present but could alternatively be mediated by a constant rapid flow of dislocations.

36 MATERIALS SCIENCE↗

Total-Ionizing-Dose Effects and Low-Frequency Noise in 16-nm InGaAs FinFETs With HfO 2 /Al 2 O 3 Dielectrics

Here, total-ionizing-dose mechanisms are investigated in 16-nm InGaAs FinFETs with an HfO 2 /Al 2 O 3 gate-stack. Transistors are irradiated up to 500 krad(SiO 2 ) and annealed at high temperatures. Irradiated devices show negative threshold-voltage V th shifts, subthreshold stretch-out, and leakage current increases. These result from positive charge trapping in the gate oxide and shallow trench insulators, and increases in the interface and border-trap charge densities. Low-frequency noise measurements at different temperatures indicate a significant increase of noise magnitude in irradiated devices at an activation energy of ~0.4 eV. Density functional theory (DFT) calculations strongly suggest that transistor V th shifts are due primarily to hole trapping at oxygen vacancies in HfO 2 , and the increased noise is due primarily to O vacancies in Al 2 O 3 . Additional contributions to the noise from defects in the GaAs buffer layer are also likely, primarily at low temperatures.

total dose effects↗

An Integrated Recursive Framework for Arbitrarily Multiscale and Multi-fidelity Modeling

The NASA Multiscale Analysis Tool (NAMSAT) serves as a state-of-the-art, “plug and play,” massively multiscale modeling (M3) platform for hierarchical materials and structures. The development of NASMAT has focused on modularity, upgradability and maintainability, interoperability, and utility. Application Program Interfaces (APIs) have been developed to facilitate the integration NASMAT into other programs (commercial, research, and user-defined) as well as the integration of other codes into NASMAT. NASMAT is an integrated, recursive platform that seamlessly allows for an arbitrary number of scales, and a variety of modeling fidelity, in a single, non-linear analysis. Thus, the macroscopic response of a material can be directly linked to the behavior of the microstructure(s), including subscale defects, making it a suitable tool for integrated computational materials engineering (ICME) because . Examples using NASMAT for simulation of polycrystalline metals at elevated temperatures will be presented.

Multiscale Modeling↗

The roles of SDHAF2 and dicarboxylate in covalent flavinylation of SDHA, the human complex II flavoprotein

Mitochondrial complex II, also known as succinate dehydrogenase (SDH), is an integral-membrane heterotetramer (SDHABCD) that links two essential energy-producing processes, the tricarboxylic acid (TCA) cycle and oxidative phosphorylation. A significant amount of information is available on the structure and function of mature complex II from a range of organisms. However, there is a gap in our understanding of how the enzyme assembles into a functional complex, and disease-associated complex II insufficiency may result from incorrect function of the mature enzyme or from assembly defects. Here, we investigate the assembly of human complex II by combining a biochemical reconstructionist approach with structural studies. We report an X-ray structure of human SDHA and its dedicated assembly factor SDHAF2. Importantly, we also identify a small molecule dicarboxylate that acts as an essential cofactor in this process and works in synergy with SDHAF2 to properly orient the flavin and capping domains of SDHA. This reorganizes the active site, which is located at the interface of these domains, and adjusts the pK a of SDHA R451 so that covalent attachment of the flavin adenine dinucleotide (FAD) cofactor is supported. We analyze the impact of disease-associated SDHA mutations on assembly and identify four distinct conformational forms of the complex II flavoprotein that we assign to roles in assembly and catalysis.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Theoretical modelling of AFM for bimetallic tip-substrate interactions

Recently, a new technique for calculating the defect energetics of alloys based on Equivalent Crystal Theory was developed. This new technique successfully predicts the bulk properties for binary alloys as well as segregation energies in the dilute limit. The authors apply this limit for the calculation of energy and force as a function of separation of an atomic force microscope (AFM) tip and substrate. The study was done for different combinations of tip and sample materials. The validity of the universality discovered for the same metal interfaces is examined for the case of different metal interactions.

Bozzolo, Guillermo↗

Electronic characterization of defects in narrow gap semiconductors: Comparison of electronic energy levels and formation energies in mercury cadmium telluride, mercury zinc telluride, and mercury zinc selenide

The project has evolved to that of using Green's functions to predict properties of deep defects in narrow gap materials. Deep defects are now defined as originating from short range potentials and are often located near the middle of the energy gap. They are important because they affect the lifetime of charge carriers and hence the switching time of transistors. We are now moving into the arena of predicting formation energies of deep defects. This will also allow us to make predictions about the relative concentrations of the defects that could be expected at a given temperature. The narrow gap materials mercury cadmium telluride (MCT), mercury zinc telluride (MZT), and mercury zinc selenide (MZS) are of interest to NASA because they have commercial value for infrared detecting materials, and because there is a good possibility that they can be grown better in a microgravity environment. The uniform growth of these crystals on earth is difficult because of convection (caused by solute depletion just ahead of the growing interface, and also due to thermal gradients). In general it is very difficult to grow crystals with both radial and axial homogeneity.

Patterson, James D.↗

Advanced methods for preparation and characterization of infrared detector materials

Crystals were prepared by the Bridgman-Stockbarger method with a wide range of crystal growth rates and temperature gradients adequate to prevent constitutional supercooling under diffusion-limited, steady-state, growth conditions. The longitudinal compositional gradients for different growth conditions and alloy compositions were calculated and compared with experimental data to develop a quantitative model of solute redistribution during the crystal growth of the alloys. Measurements were performed to ascertain the effect of growth conditions on radial compositional gradients. The pseudobinary HgTe-CdTe constitutional phase diagram was determined by precision differential-thermal-analysis measurements and used to calculate the segregation coefficient of Cd as a function of x and interface temperature. Experiments were conducted to determine the ternary phase equilibria in selected regions of the Hg-Cd-Te constitutional phase diagram. Electron and hole mobilities as functions of temperature were analyzed to establish charge-carrier scattering probabilities. Computer algorithms specific to Hg(1-x)CdxTe were developed for calculations of the charge-carrier concentration, charge-carrier mobilities, Hall coefficient, and Dermi Fermi energy as functions of x, temperature, ionized donor and acceptor concentrations, and neutral defect concentrations.

Broerman, J. G.↗

Two-dimensional modelling of compressive failure in delaminated laminates

An analytical model is developed to assess the compressive strength criticality of near-surface interlaminar defects in laminated composites. The delaminated region is elliptic in shape, separating a thick isotropic plate from a thin orthotropic layer whose material axes coincide with the ellipse axes. The growth conditions and growth behavior of this defect are studied by breaking the overall problem into an elastic stability problem and a fracture problem. Post-buckling solution for the elliptic section is obtained using the Rayleigh-Ritz method while an energy balance criterion based on a self-similar disbond growth governs the fracture. The parameters controlling the growth or arrest of the delamination damage are identified as the fracture energy, disbond depth and elastic properties of the materials from both sides of the delaminating interface. By varying the degree of material anisotropy relative to the loading axis a range in growth behavior was found including stable or unstable crack growth parallel to or normal to the loading axis.

Chai, H.↗